公开(公告)号：US09441119B2

公开(公告)日：2016-09-13

申请号：US13072860

申请日：2011-03-28

申请人： Nikhil D. Kalyankar ,  Nitin Kumar ,  Zhi-Wen Sun

发明人： Nikhil D. Kalyankar ,  Nitin Kumar ,  Zhi-Wen Sun

IPC分类号： C08L71/02 ,  C08L1/28 ,  C08L83/02 ,  C09D7/12 ,  B82Y30/00 ,  C03C1/00 ,  C03C17/02 ,  C23C18/12 ,  C09D1/00 ,  C09D5/00 ,  C08K5/00 ,  C08L1/02

CPC分类号： C09D7/1266 ,  B82Y30/00 ,  C03C1/008 ,  C03C17/02 ,  C03C2203/30 ,  C03C2204/08 ,  C03C2218/113 ,  C08K5/0008 ,  C08L1/02 ,  C08L1/284 ,  C08L71/02 ,  C08L2201/00 ,  C09D1/00 ,  C09D5/00 ,  C09D7/65 ,  C09D7/67 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/1254 ,  C23C18/1295

摘要： Embodiments of the invention generally relate to methods and compositions for forming conformal coatings on textured substrates. More specifically, embodiments of the invention generally relate to sol-gel processes and sol-gel compositions for forming low refractive index conformal coatings on textured transparent substrates. In one embodiment a method of forming a conformal coating on a textured glass substrate is provided. The method comprises coating the textured glass substrate with a sol-gel composition comprising a solidifier. It is believed that use of the solidifier expedites the sol-gel transition point of the sol-gel composition leading to more conformal deposition of coatings on textured substrates.

摘要翻译： 本发明的实施方案一般涉及在纹理化基底上形成保形涂层的方法和组合物。 更具体地，本发明的实施方案一般涉及在纹理透明基底上形成低折射率共形涂层的溶胶 - 凝胶法和溶胶 - 凝胶组合物。 在一个实施例中，提供了在纹理化玻璃基板上形成共形涂层的方法。 该方法包括用包含固化剂的溶胶 - 凝胶组合物涂覆织构化的玻璃基底。 据信，使用固化剂可加速溶胶 - 凝胶组合物的溶胶 - 凝胶转变点，从而导致涂层在纹理化基材上的更为适形的沉积。

公开(公告)号：US08557615B2

公开(公告)日：2013-10-15

申请号：US13310724

申请日：2011-12-03

申请人： Guowen Ding ,  Mohd Fadzli Anwar Hassan ,  Hien Minh Huu Le ,  Zhi-Wen Sun

发明人： Guowen Ding ,  Mohd Fadzli Anwar Hassan ,  Hien Minh Huu Le ,  Zhi-Wen Sun

IPC分类号： H01L21/00

CPC分类号： H01B1/08 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541

摘要： A method for forming a transparent conductive oxide (TCO) film for use in a TFPV solar device comprises the formation of a tin oxide film doped with between about 5 volume % and about 40 volume % antimony (ATO). Advantageously, the Sb concentration generally ranges from about 15 volume % to about 20 volume % and more advantageously, the Sb concentration is about 19 volume %. The ATO films exhibited almost no change in transmission characteristics between about 300 nm and about 1100 nm or resistivity after either a 15 hour exposure to water or an anneal in air for 8 minutes at 650 C, which indicated the excellent durability. Control sample of Al doped zinc oxide (AZO) exhibited degradation of resistivity for both a 15 hour exposure to water and an anneal in air for 8 minutes at 650 C.

摘要翻译： 用于形成用于TFPV太阳能装置的透明导电氧化物（TCO）膜的方法包括形成掺杂有约5体积％至约40体积％的锑（ATO）的氧化锡膜。 有利地，Sb浓度通常在约15体积％至约20体积％的范围内，更有利地，Sb浓度为约19体积％。 ATO膜在暴露于水中15小时或在空气中在650℃下退火8分钟后，在约300nm至约1100nm之间的透射特性几乎没有显示出变化或电阻率，这表明耐久性优异。 Al掺杂的氧化锌（AZO）的对照样品在暴露于水的15小时和在空气中在650℃下退火8分钟都表现出电阻率的降低。

公开(公告)号：US20130143354A1

公开(公告)日：2013-06-06

申请号：US13310724

申请日：2011-12-03

申请人： Guowen Ding ,  Mohd Fadzli Anwar Hassan ,  Hien Minh Huu Le ,  Zhi-Wen Sun

发明人： Guowen Ding ,  Mohd Fadzli Anwar Hassan ,  Hien Minh Huu Le ,  Zhi-Wen Sun

IPC分类号： H01L31/18 ,  H01B1/08

CPC分类号： H01B1/08 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541

摘要： A method for forming a transparent conductive oxide (TCO) film for use in a TFPV solar device comprises the formation of a tin oxide film doped with between about 5 volume % and about 40 volume % antimony (ATO). Advantageously, the Sb concentration generally ranges from about 15 volume % to about 20 volume % and more advantageously, the Sb concentration is about 19 volume %. The ATO films exhibited almost no change in transmission characteristics between about 300 nm and about 1100 nm or resistivity after either a 15 hour exposure to water or an anneal in air for 8 minutes at 650 C, which indicated the excellent duarability. Control sample of Al doped zinc oxide (AZO) exhibited degradation of resistivity for both a 15 hour exposure to water and an anneal in air for 8 minutes at 650 C.

摘要翻译： 用于形成用于TFPV太阳能装置的透明导电氧化物（TCO）膜的方法包括形成掺杂有约5体积％至约40体积％的锑（ATO）的氧化锡膜。 有利地，Sb浓度通常在约15体积％至约20体积％的范围内，更有利地，Sb浓度为约19体积％。 ATO膜在暴露于水中15小时或在空气中在650℃退火8分钟后，在约300nm至约1100nm之间的透射特性或电阻率几乎没有显示出变化，这表明极好的二次性。 Al掺杂的氧化锌（AZO）的对照样品在暴露于水的15小时和在空气中在650℃下退火8分钟都表现出电阻率的降低。

公开(公告)号：US20130136919A1

公开(公告)日：2013-05-30

申请号：US13307301

申请日：2011-11-30

申请人： Guowen Ding ,  Mohd Fadzli Anwar Hassan ,  Hien Minh Huu Le ,  Zhi-Wen Sun

发明人： Guowen Ding ,  Mohd Fadzli Anwar Hassan ,  Hien Minh Huu Le ,  Zhi-Wen Sun

IPC分类号： B32B3/00 ,  B32B13/04 ,  B05D1/36 ,  B05D3/02 ,  C23C14/34 ,  B32B17/06 ,  B32B15/04

CPC分类号： C23C14/086 ,  C23C14/024 ,  C23C14/5806 ,  Y10T428/12549 ,  Y10T428/265

摘要： A method for forming and protecting high quality bismuth oxide films comprises depositing a transparent thin film on a substrate comprising one of Si, alkali metals, or alkaline earth metals. The transparent thin film is stable at room temperature and at higher temperatures and serves as a diffusion barrier for the diffusion of impurities from the substrate into the bismuth oxide. Reactive sputtering, sputtering from a compound target, or reactive evaporation are used to deposit a bismuth oxide film above the diffusion barrier.

公开(公告)号：US08263427B2

公开(公告)日：2012-09-11

申请号：US12791726

申请日：2010-06-01

申请人： Zhi-Wen Sun ,  Nitin Kumar ,  Guizhen Zhang ,  Nikhil Kalyankar ,  Minh Anh Nguyen

发明人： Zhi-Wen Sun ,  Nitin Kumar ,  Guizhen Zhang ,  Nikhil Kalyankar ,  Minh Anh Nguyen

IPC分类号： H01L21/00

CPC分类号： B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00536 ,  B01J2219/00596 ,  B01J2219/00702 ,  B01J2219/00754 ,  B01J2219/00756 ,  C40B40/18 ,  C40B60/14 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/1884 ,  Y02E10/50

摘要： Embodiments of the current invention include methods of improving a process of forming a textured TCO film by combinatorial methods. The combinatorial method may include depositing a TCO by physical vapor deposition or sputtering, annealing the TCO, and etching the TCO where at least one of the depositing, the annealing, or the etching is performed combinatorially. Embodiments of the current invention also include improved methods of forming the TCO based on the results of combinatorial testing.

摘要翻译： 本发明的实施例包括通过组合方法改进形成纹理TCO膜的工艺的方法。 组合方法可以包括通过物理气相沉积或溅射沉积TCO，退火TCO，以及蚀刻TCO，其中组合进行沉积，退火或蚀刻中的至少一个。 本发明的实施例还包括基于组合测试的结果形成TCO的改进方法。

公开(公告)号：US20100288725A1

公开(公告)日：2010-11-18

申请号：US12729199

申请日：2010-03-22

申请人： Zhi-Wen Sun ,  Nitin Kumar ,  Guizhen Zhang ,  Minh Anh Nguyen ,  Nikhil Kalyankar

发明人： Zhi-Wen Sun ,  Nitin Kumar ,  Guizhen Zhang ,  Minh Anh Nguyen ,  Nikhil Kalyankar

IPC分类号： H01B13/16 ,  C09K13/00 ,  C09K13/06

CPC分类号： C23C14/5873 ,  C03C17/36 ,  C03C17/3678 ,  C03C2217/944 ,  C03C2218/32 ,  C09K13/04 ,  C23C14/086 ,  H01L31/02366 ,  Y02E10/50

摘要： Surface texturing of the transparent conductive oxide (TCO) front contact of a thin film photovoltaic (TFPV) solar cell is needed to enhance the light-trapping capability of the TFPV solar cells and thus improving the solar cell efficiency. Embodiments of the current invention describe chemical formulations and methods for the wet etching of the TCO. The formulations and methods may be optimized to tune the surface texturing of the TCO as desired.

摘要翻译： 需要薄膜光伏（TFPV）太阳能电池的透明导电氧化物（TCO）前触点的表面纹理来增强TFPV太阳能电池的光捕获能力，从而提高太阳能电池效率。 本发明的实施方案描述了用于湿法蚀刻TCO的化学配方和方法。 可以优化配方和方法以根据需要调整TCO的表面纹理。

公开(公告)号：US07678607B2

公开(公告)日：2010-03-16

申请号：US11702725

申请日：2007-02-05

申请人： Tony Chiang ,  Chi-I Lang ,  Zhi-wen Sun ,  Jinhong Tong ,  Nitin Kumar

发明人： Tony Chiang ,  Chi-I Lang ,  Zhi-wen Sun ,  Jinhong Tong ,  Nitin Kumar

IPC分类号： H01L21/00

CPC分类号： H01L45/04 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633

摘要： Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

公开(公告)号：US20090120799A1

公开(公告)日：2009-05-14

申请号：US12332882

申请日：2008-12-11

申请人： Zhi-Wen Sun ,  Renren He ,  You Wang ,  Michael X. Yang

发明人： Zhi-Wen Sun ,  Renren He ,  You Wang ,  Michael X. Yang

IPC分类号： C25D3/38 ,  C25D5/50

CPC分类号： H01L21/76864 ,  C25D3/38 ,  C25D5/10 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877

摘要： Embodiments of the invention teach a method for depositing a copper seed layer to a substrate surface, generally to a barrier layer. The method includes placing the substrate surface into a copper solution, wherein the copper solution includes complexed copper ions. A current or bias is applied across the substrate surface and the complexed copper ions are reduced to deposit the copper seed layer onto the barrier layer.

摘要翻译： 本发明的实施方案教导了一种将铜籽晶层沉积到基底表面的方法，通常为阻挡层。 该方法包括将基板表面放置在铜溶液中，其中铜溶液包括络合的铜离子。 在衬底表面上施加电流或偏压，还原络合的铜离子以将铜籽晶层沉积到阻挡层上。

公开(公告)号：US20070125657A1

公开(公告)日：2007-06-07

申请号：US11255368

申请日：2005-10-21

申请人： Zhi-Wen Sun ,  Renren He ,  Nicolay Kovarsky ,  John Dukovic ,  Aron Rosenfeld ,  Lei Zhu

发明人： Zhi-Wen Sun ,  Renren He ,  Nicolay Kovarsky ,  John Dukovic ,  Aron Rosenfeld ,  Lei Zhu

IPC分类号： C25D5/34 ,  C25D3/38

CPC分类号： C25D3/38 ,  C25D5/10 ,  C25D5/34 ,  C25D5/54 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention teaches a method for depositing a copper seed layer onto a substrate surface, generally onto a barrier layer. The barrier layer may include a refractory metal and/or a group 8, 9 or 10 metal. The method includes cathodically pre-treating the substrate in an acid-containing solution. The substrate is then placed into a copper solution (pH≧7.0) that includes complexed copper ions and a current or bias is applied across the substrate surface. The complexed copper ions are reduced to deposit a copper seed layer onto the barrier layer. In one aspect, a complex alkaline bath is then used to electrochemically plate a gapfill layer on the substrate surface, followed by overfill in the same bath. In another aspect, an acidic bath ECP gapfill process and overfill process follow the alkaline seed layer process.

摘要翻译： 本发明教导了一种将铜籽晶层沉积到基底表面上的方法，通常在阻挡层上。 阻挡层可以包括难熔金属和/或第8,9或10族金属。 该方法包括在含酸溶液中阴极预处理底物。 然后将衬底放入包括络合的铜离子的铜溶液（pH> = 7.0）中，并且在衬底表面上施加电流或偏压。 络合的铜离子被还原以将铜籽晶层沉积在阻挡层上。 在一个方面，然后使用复杂的碱性浴来电化学地在衬底表面上印刷间隙填充层，然后在相同的浴中过量填充。 另一方面，酸性浴ECP间隙填充过程和过度填充过程遵循碱性种子层过程。

公开(公告)号：US20070052104A1

公开(公告)日：2007-03-08

申请号：US11404058

申请日：2006-04-13

申请人： Michael Yang ,  Aron Rosenfeld ,  Hooman Hafezi ,  Zhi-Wen Sun ,  John Dukovic

发明人： Michael Yang ,  Aron Rosenfeld ,  Hooman Hafezi ,  Zhi-Wen Sun ,  John Dukovic

IPC分类号： H01L23/48

CPC分类号： H01L23/53238 ,  H01L21/76855 ,  H01L21/76873 ,  H01L2924/0002 ,  H01L2924/00

摘要： Generally, the process includes depositing a barrier layer and seed layer on a feature formed in a dielectric layer, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier and seed layers formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.

摘要翻译： 通常，该方法包括在形成在电介质层中的特征上沉积阻挡层和种子层，执行接枝过程，引发铜层，然后通过使用大量铜填充工艺来填充该特征。 根据本文描述的方面形成的铜特征对于形成在半导体衬底上的阻挡层和种子层具有期望的粘合性能，并且证明增强的电迁移和应力迁移导致形成在衬底上的制造器件。