公开(公告)号：US07078257B2

公开(公告)日：2006-07-18

申请号：US10384607

申请日：2003-03-11

申请人： Akira Sakamoto ,  Hideo Nakayama ,  Yasuaki Miyamoto ,  Jun Sakurai

发明人： Akira Sakamoto ,  Hideo Nakayama ,  Yasuaki Miyamoto ,  Jun Sakurai

IPC分类号： H01L21/00

CPC分类号： H01S5/18311 ,  H01S5/18358 ,  H01S5/2086

摘要： A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.

摘要翻译： 一种制造表面发射半导体激光器的方法包括：第一步骤，在衬底上形成具有从衬底的中心辐射的条带的多个监视用半导体层，以及包括半导体层并位于外围的激光部分 多个监视用半导体层的第二步骤，在激光部中形成选择性氧化区域时，在多个监视用半导体层上监测氧化条件的第二工序，以及控制上述选择氧化区域的氧化的第三工序 由此监测的氧化条件的基础。

公开(公告)号：US20050180476A1

公开(公告)日：2005-08-18

申请号：US11105450

申请日：2005-04-14

申请人： Akira Sakamoto ,  Hideo Nakayama ,  Yasuaki Miyamoto ,  Jun Sakurai

发明人： Akira Sakamoto ,  Hideo Nakayama ,  Yasuaki Miyamoto ,  Jun Sakurai

IPC分类号： H01L21/66 ,  H01S5/183 ,  H01S5/20 ,  H01S5/22 ,  H01S5/323 ,  H01S5/00

CPC分类号： H01S5/18311 ,  H01S5/18358 ,  H01S5/2086

摘要： A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.

摘要翻译： 一种制造表面发射半导体激光器的方法包括：第一步骤，在衬底上形成具有从衬底的中心辐射的条带的多个监视用半导体层，以及包括半导体层并位于外围的激光部分 多个监视用半导体层的第二步骤，在激光部中形成选择性氧化区域时，在多个监视用半导体层上监测氧化条件的第二工序，以及控制上述选择氧化区域的氧化的第三工序 由此监测的氧化条件的基础。

公开(公告)号：US06814501B2

公开(公告)日：2004-11-09

申请号：US10292454

申请日：2002-11-13

申请人： Tsutomu Hamada ,  Shinya Kyozuka ,  Tomo Baba ,  Hideo Nakayama

发明人： Tsutomu Hamada ,  Shinya Kyozuka ,  Tomo Baba ,  Hideo Nakayama

IPC分类号： G02B636

CPC分类号： G02B6/4249

摘要： A light-emitting device includes 16 vertical-cavity surface-emitting laser diodes (VCSELs) disposed like a 4×4 grid, for example, in a sufficiently narrower range than the end surface of an optical fiber. The 16 VCSELs disposed in the light-emitting device emit optical signals in the same direction. Since the VCSELs are disposed with a concentration in the sufficiently narrower range than the end surface of the optical fiber as described above, if the optical signals emitted from the VCSELs are spread, almost all optical signals generated by the light-emitting device are incident on the end surface of the optical fiber and are transmitted through the optical fiber.

摘要翻译： 发光器件包括16个垂直腔表面发射激光二极管（VCSEL），其布置成像4×4栅格，例如在比光纤的端面足够窄的范围内。 布置在发光器件中的16个VCSEL发射相同方向的光信号。 由于如上所述，VCSEL的浓度比光纤的端面足够窄的范围进行配置，所以如果从VCSEL发射的光信号扩散，则由发光装置产生的几乎所有的光信号入射到 光纤的端面并通过光纤传输。

公开(公告)号：US08759859B2

公开(公告)日：2014-06-24

申请号：US13562673

申请日：2012-07-31

申请人： Taku Kinoshita ,  Kazutaka Takeda ,  Takashi Kondo ,  Hideo Nakayama

发明人： Taku Kinoshita ,  Kazutaka Takeda ,  Takashi Kondo ,  Hideo Nakayama

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L27/153 ,  B41J2/45 ,  H01L33/0016 ,  H01L33/10 ,  H01L33/14 ,  H01L33/20 ,  H01L33/30

摘要： Disclosed is a light-emitting element including a semiconductor substrate, an island structure formed on the semiconductor substrate and including at least a current confining layer and p-type and n-type semiconductor layers, a light-emitting thyristor formed in the island structure and having a pnpn structure, and a shift thyristor formed in the island structure and having a pnpn structure, wherein a groove portion having a depth such that the groove portion reaches at least the current confining layer is formed between a formation region of the shift thyristor of the island structure and a formation region of the light-emitting thyristor, and an oxidized region that is selectively oxidized from a side surface of the island structure and a side surface of the groove portion is formed in the current confining layer.

摘要翻译： 公开了一种发光元件，包括半导体衬底，形成在半导体衬底上的岛结构，至少包括电流限制层和p型和n型半导体层，形成在岛状结构中的发光晶闸管， 具有pnpn结构，以及形成在岛状结构中并具有pnpn结构的移位晶闸管，其中具有使得沟槽部分至少达到电流限制层的深度的沟槽部分形成在所述移位晶闸管的形成区域 岛结构和发光晶闸管的形成区域，以及从岛状结构的侧面选择性地氧化的氧化区域和沟槽部分的侧面形成在电流限制层中。

公开(公告)号：US08368972B2

公开(公告)日：2013-02-05

申请号：US13190022

申请日：2011-07-25

申请人： Kazutaka Takeda ,  Hideo Nakayama

发明人： Kazutaka Takeda ,  Hideo Nakayama

IPC分类号： H04N1/04 ,  H04N1/46

CPC分类号： H01S5/18311 ,  H01S5/02212 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/18355 ,  H01S5/18386

摘要： A surface-emitting semiconductor laser includes a substrate, a first semiconductor multi-layered reflector of a first conductivity type, an active region, a second semiconductor multi-layered reflector of a second conductivity type, a columnar structure, a current-confining layer including a conductive area surrounded with an oxidized area, a first electrode defining a light-emitting window, a first dielectric film covering the light-emitting window, and a second dielectric film formed on the first dielectric film. The second dielectric film has an asymmetrical shape having a long axis and a short axis, the second dielectric film is located at a position overlapping with the conductive area, the second refractive index n2 is greater than the first refractive index n1, the thickness of the first dielectric film is an odd multiple of λ/4·n1 (λ: oscillation wavelength), and the thickness of the second dielectric film is an odd multiple of λ/4·n2.

摘要翻译： 表面发射半导体激光器包括基板，第一导电类型的第一半导体多层反射器，有源区，第二导电类型的第二半导体多层反射器，柱状结构，电流限制层，包括 由氧化区域包围的导电区域，限定发光窗口的第一电极，覆盖发光窗口的第一电介质膜和形成在第一电介质膜上的第二电介质膜。 第二电介质膜具有长轴和短轴的不对称形状，第二电介质膜位于与导电区重叠的位置，第二折射率n2大于第一折射率n1， 第一电介质膜是λ/ 4·n1（λ：振荡波长）的奇数倍，第二电介质膜的厚度为λ/ 4·n2的奇数倍。

公开(公告)号：US08274589B2

公开(公告)日：2012-09-25

申请号：US12662073

申请日：2010-03-30

申请人： Hideo Nakayama

发明人： Hideo Nakayama

IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N5/235 ,  H04N5/228

CPC分类号： H04N5/378 ,  H03M1/06 ,  H03M1/742 ,  H04N5/374

摘要： A DA converter includes: an analog signal output section that generates an output current and a non-output current according to a value of a digital input signal in response to a gain control signal supplied to adjust gain, and that outputs an analog signal produced by current-voltage conversion of the output current and causes the non-output current to flow to a reference potential; a gain control signal generating section that generates a gain current and a non-select current according to a value of a digital gain control signal, and that generates the gain control signal by current-voltage conversion of the gain current and supplies the gain control signal to the analog signal output section; and a correction current generating section that generates, based on the non-select current of the gain control signal generating section, a correction current that complements an amount of current fluctuation due to changes in gain settings in the gain control signal generating section, and that causes the correction current to flow to the reference potential.

摘要翻译： DA转换器包括：模拟信号输出部分，响应于提供的用于调节增益的增益控制信号，根据数字输入信号的值产生输出电流和非输出电流，并且输出由 输出电流的电流 - 电压转换，并使非输出电流流向参考电位; 增益控制信号产生部分，根据数字增益控制信号的值产生增益电流和非选择电流，并通过电流 - 电压转换增益电流产生增益控制信号，并将增益控制信号 到模拟信号输出部分; 以及校正电流产生部，其基于所述增益控制信号生成部的非选择电流生成补偿电流，所述校正电流补充由于所述增益控制信号生成部中的增益设定的变化引起的电流变动量， 导致校正电流流向参考电位。

公开(公告)号：US07700955B2

公开(公告)日：2010-04-20

申请号：US11982930

申请日：2007-11-06

申请人： Yasuaki Kuwata ,  Hideo Nakayama ,  Ryoji Ishii ,  Kayoko Nakamura

发明人： Yasuaki Kuwata ,  Hideo Nakayama ,  Ryoji Ishii ,  Kayoko Nakamura

IPC分类号： H01L29/26 ,  H01L27/15 ,  H01L29/267 ,  G02B6/26 ,  G02B6/36 ,  H01S5/00 ,  H01S3/20 ,  H01S3/08

CPC分类号： H01L27/15 ,  H01L31/173 ,  H01L33/38

摘要： A semiconductor device includes a substrate, a semiconductor layer formed on the substrate, and an optically functional portion formed by using at least a portion of the semiconductor layer. The optically functional portion performs light emission or light reception. The semiconductor device further includes a first driving electrode that is electrically connected to a semiconductor layer on a surface of the optically functional portion, and the first driving electrode drives the optically functional portion. The semiconductor device further includes an encapsulating electrode that is formed on the semiconductor layer to surround periphery of the optically functional portion, and electrically connected to the first driving electrode.

摘要翻译： 半导体器件包括衬底，形成在衬底上的半导体层和通过使用半导体层的至少一部分形成的光学功能部分。 光学功能部分执行发光或光接收。 半导体器件还包括与光学功能部分的表面上的半导体层电连接的第一驱动电极，第一驱动电极驱动光学功能部分。 半导体器件还包括封装电极，其形成在半导体层上以围绕光学功能部分的周围，并且电连接到第一驱动电极。

公开(公告)号：US20080224167A1

公开(公告)日：2008-09-18

申请号：US11982930

申请日：2007-11-06

申请人： Yasuaki Kuwata ,  Hideo Nakayama ,  Ryoji Ishii ,  Kayoko Nakamura

发明人： Yasuaki Kuwata ,  Hideo Nakayama ,  Ryoji Ishii ,  Kayoko Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L27/15 ,  H01L31/173 ,  H01L33/38

摘要： A semiconductor device includes a substrate, a semiconductor layer formed on the substrate, and an optically functional portion formed by using at least a portion of the semiconductor layer. The optically functional portion performs light emission or light reception. The semiconductor device further includes a first driving electrode that is electrically connected to a semiconductor layer on a surface of the optically functional portion, and the first driving electrode drives the optically functional portion. The semiconductor device further includes an encapsulating electrode that is formed on the semiconductor layer to surround periphery of the optically functional portion, and electrically connected to the first driving electrode.

摘要翻译： 半导体器件包括衬底，形成在衬底上的半导体层和通过使用半导体层的至少一部分形成的光学功能部分。 光学功能部分执行发光或光接收。 半导体器件还包括与光学功能部分的表面上的半导体层电连接的第一驱动电极，第一驱动电极驱动光学功能部分。 半导体器件还包括封装电极，其形成在半导体层上以围绕光学功能部分的周围，并且电连接到第一驱动电极。

公开(公告)号：US20050185688A1

公开(公告)日：2005-08-25

申请号：US11111717

申请日：2005-04-22

申请人： Hideo Nakayama ,  Akira Sakamoto

发明人： Hideo Nakayama ,  Akira Sakamoto

IPC分类号： H01L21/66 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/31 ,  H01S3/08 ,  H01S5/00 ,  H01S5/026 ,  H01S5/183 ,  H01S5/343

CPC分类号： H01S5/18311 ,  B82Y20/00 ,  H01S5/0042 ,  H01S5/18338 ,  H01S5/1835 ,  H01S5/18358 ,  H01S5/3432 ,  H01S2301/176

摘要： A method of fabricating a surface emitting semiconductor laser includes the following steps. A first laminate of semiconductor layers and a second laminate of semiconductor layers are formed on a substrate. The first laminate includes a first reflection mirror layer of a first conduction type, an active region, a III-V semiconductor layer containing Al, and a second reflection mirror layer of a second conduction type, the second laminate being used for monitoring and having an oxidizable region. The first and second laminates are etched so as to form mesas on the substrate in which side surface of the III-V semiconductor layer contained in the first laminate is exposed. Oxidization of the III-V semiconductor layer from the side surface is started at an oxidization rate. During oxidization, a reflectance of the second laminate for monitoring or its variation is monitored, and oxidization of the III-V semiconductor layer is terminated after a constant time from a time when the reflectance or its variation reaches a corresponding given value.

摘要翻译： 制造表面发射半导体激光器的方法包括以下步骤。 半导体层的第一层叠体和半导体层的第二层叠体形成在基板上。 第一层压体包括第一导电类型的第一反射镜层，有源区，含有Al的III-V半导体层和第二导电类型的第二反射镜层，第二层压板用于监测并具有 可氧化区域。 对第一和​​第二层压体进行蚀刻，以在第一层压体中包含的III-V半导体层的侧表面露出的基板上形成台面。 从侧面氧化III-V半导体层以氧化速率开始。 在氧化期间，监测用于监测或其变化的第二层压体的反射率，并且在从反射率或其变化达到相应给定值的时间起经过恒定时间之后，III-V半导体层的氧化终止。

公开(公告)号：US20050169336A1

公开(公告)日：2005-08-04

申请号：US10899046

申请日：2004-07-27

申请人： Ryoji Ishii ,  Hideo Nakayama ,  Yasuaki Kuwata

发明人： Ryoji Ishii ,  Hideo Nakayama ,  Yasuaki Kuwata

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/183 ,  H01S5/30 ,  H01S5/343

CPC分类号： H01S5/18313 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/18358 ,  H01S5/18394 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3432 ,  H01S2301/166

摘要： A surface-emitting semiconductor laser includes comprising a substrate, a first mesa that is formed on the substrate and includes at least one mesa capable of emitting laser light, and a second mesa that is formed on the substrate and includes at least one mesa restraining emission of laser light.

摘要翻译： 一种表面发射半导体激光器包括：衬底，形成在衬底上并包括能够发射激光的至少一个台面的第一台面和形成在衬底上的第二台面，并且包括至少一个台面限制发射 的激光。