摘要:
An apparatus/method is disclosed that may comprise an EUV light source which may comprise a collector which may comprise an elliptical collector mirror having a first focus at a plasma initiation point and a second focus at an intermediate focus of the EUV light source; a debris shield intermediate the plasma initiation point and the elliptical collector mirror comprising a plurality of radially extending channels extending from the first focus and aligned to the second focus and in symmetry about an axis of rotation passing through the first focus and aligned to a longitudinal axis of the elliptical collector mirror. The plurality of channels may be formed between a plurality of generally planer foils extending radially from the first focus and aligned to the second focus and in symmetry about an axis of rotation passing through the first focus and aligned to a longitudinal axis of the collector mirror.
摘要:
The present invention provides a control system for a modular high repetition rate two discharge chamber ultraviolet gas discharge laser. In preferred embodiments, the laser is a production line machine with a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber.Novel control features specially adapted for a two-chamber gas discharge laser system include: (1) pulse energy controls, with nanosecond timing precision (2) precision pulse to pulse wavelength controls with high speed and extreme speed wavelength tuning (3) fast response gas temperature control and (4) F2 injection controls with novel learning algorithm.
摘要:
A helium purge for a grating based line narrowing device for minimizing thermal distortions in line narrowed lasers producing high energy laser beams at high repetition rates. Applicants have shown substantial improvement in performance with the uses of helium purge as compared to prior art nitrogen purges. In preferred embodiments a stream of helium gas is directed across the face of the grating. In other embodiments the purge gas pressure is reduced to reduce the optical effects of the hot gas layer.
摘要:
The present invention provides a control system for a modular high repetition rate two discharge chamber ultraviolet gas discharge laser. In preferred embodiments, the laser is a production line machine with a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. Feedback timing control techniques are provided for controlling the relative timing of the discharges in the two chambers with an accuracy in the range of about 2 to 5 billionths of a second even in burst mode operation. This MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality.
摘要:
A narrow band laser system having two laser subsystems. The first laser subsystem is configured to provide a very narrow band pulsed output beam which is used to injection seed the second laser subsystem where the narrow band pulsed seed beam is amplified to produce a narrow band pulsed output beam. A pulse power supply is provided which is specially configured to precisely time the discharges in the two laser subsystem so that the discharges are properly synchronized. Preferred embodiments include a pulse power system with a pulse transformer unit having two sets of transformer cores. A single upstream pulse compression circuit provides high voltage pulses in parallel to the primary windings of all of the cores in both sets. Separate secondary conductors (one passing through one set of cores and the other passing through the other set of cores) provide very high voltage pulses respectively to separate downstream circuits supplying discharge pulses to the electrodes in each of two separate laser chambers. Preferred embodiments include KrF, ArF and F2 systems. In these preferred embodiments, line narrowing may be accomplished within the resonant cavity of the seed laser or the output of the seed laser could be line narrowed using a pre-gain filter.
摘要:
A high resolution etalon-grating spectrometer. A preferred embodiment presents an extremely narrow slit function in the ultraviolet range and is very useful for measuring bandwidth of narrow band excimer lasers used for integrated circuit lithography. Light from the laser is focused into a diffuser and the diffused light exiting the diffuser illuminates an etalon. A portion of its light exiting the etalon is collected and directed into a slit positioned at a fringe pattern of the etalon. Light passing through the slit is collimated and the collimated light illuminates a grating positioned in an approximately Littrow configuration which disburses the light according to wavelength. A portion of the dispursed light representing the wavelength corresponding to the selected etalon fringe is passed through a second slit and monitored by a light detector. When the etalon and the grating are tuned to the same precise wavelength a slit function is defined which is extremely narrow such as about 0.034 pm (FWHM) and about 0.091 pm (95 percent integral). The etalon and the grating are placed in a leak-fight enclosure filled with a gas, such as nitrogen or helium. The wavelength scanning of the spectrometer is done by changing the gas pressure in the enclosure during the scan.
摘要:
An extreme ultraviolet light system and method includes a drive laser, a chamber including an extreme ultraviolet light collector and a target material dispenser including an adjustable target material outlet capable of outputting multiple portions of target material along a target material path. Also included: a drive laser steering device, a detection system including at least one detector and a controller coupled to the target material dispenser, the detector system and the drive laser steering device. The controller includes logic for detecting a location of the first portion of target material from the first light reflected from the first portion of target material and logic for adjusting the target material dispenser outlet to output a subsequent portion of target material to a waist of the focused drive laser. A system and a method for optimizing an extreme ultraviolet light output is also disclosed.
摘要:
An extreme-ultraviolet (EUV) light source is described herein comprising an optic; a primary EUV light radiator generating an EUV light emitting plasma and producing a deposit on said optic; and a cleaning system comprising a gas and a secondary light radiator, the secondary light radiator generating a laser produced plasma and producing a cleaning species with the gas.
摘要:
A method and apparatus may comprise a line narrowed pulsed excimer or molecular fluorine gas discharge laser system which may comprise a seed laser oscillator producing an output comprising a laser output light beam of pulses which may comprise a first gas discharge excimer or molecular fluorine laser chamber; a line narrowing module within a first oscillator cavity; a laser amplification stage containing an amplifying gain medium in a second gas discharge excimer or molecular fluorine laser chamber receiving the output of the seed laser oscillator and amplifying the output of the seed laser oscillator to form a laser system output comprising a laser output light beam of pulses, which may comprise a ring power amplification stage.
摘要:
A system and method generating an extreme ultraviolet light in an extreme ultraviolet light chamber including a collector mirror, a droplet generation system having a droplet outlet aligned to output a plurality of droplets along a target material path and a first catch including a first open end substantially aligned to the target material path and at least one internal surface oriented toward a second end of the first catch, the second end being opposite from the first open end.