公开(公告)号：US07982253B2

公开(公告)日：2011-07-19

申请号：US12184819

申请日：2008-08-01

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Carolin Tolksdorf ,  Winfried Kaindl ,  Armin Willmeroth

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Carolin Tolksdorf ,  Winfried Kaindl ,  Armin Willmeroth

IPC分类号： H01L29/94

CPC分类号： H01L27/0808 ,  H01L21/26513 ,  H01L27/0811 ,  H01L27/088 ,  H01L29/7836

摘要： A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.

摘要翻译： 具有动态栅极漏极电容的半导体器件。 一个实施例提供一种半导体器件。 该器件包括半导体衬底，场效应晶体管结构，其包括源区，第一体区，漏区，栅电极结构和栅极绝缘层。 栅极绝缘层设置在栅电极结构和体区之间。 栅极电极结构和漏极区域部分地形成电容器结构，其包括栅极 - 漏极电容，该栅极 - 漏极电容被配置为随着施加在源极和漏极区域之间的变化的反向电压而动态地改变。 栅极 - 漏极电容在给定的阈值下包括至少一个局部最大值，或者在给定的反向电压下包括平台状过程。

公开(公告)号：US20100210091A1

公开(公告)日：2010-08-19

申请号：US12769976

申请日：2010-04-29

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Helmut Strack ,  Hans-Joerg Timme ,  Wolfgang Werner

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Helmut Strack ,  Hans-Joerg Timme ,  Wolfgang Werner

IPC分类号： H01L21/762 ,  H01L21/461 ,  H01L21/22 ,  H01L21/38 ,  H01L21/302

CPC分类号： H01L21/26506 ,  H01L21/263 ,  H01L21/3242

摘要： A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.

摘要翻译： 一种制造半导体的方法包括提供具有第一侧和第二侧的p掺杂半导体本体; 通过第一侧将半导体本体中的质子注入半导体本体的目标深度; 将半导体主体的第一侧接合到载体基板; 通过加热所述半导体本体从而在半导体本体中形成pn结，形成半导体本体中的n掺杂区; 以及移除所述半导体本体的所述第二侧至少与在所述pn结处跨过的空间电荷区域一样远。

公开(公告)号：US07696600B2

公开(公告)日：2010-04-13

申请号：US11713226

申请日：2007-03-02

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Pfirsch ,  Elmar Falck ,  Josef Lutz

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Pfirsch ,  Elmar Falck ,  Josef Lutz

IPC分类号： H01L29/10 ,  H01L29/72

CPC分类号： H01L29/0834 ,  H01L29/7395 ,  H01L29/861

摘要： A semiconductor device in the form of an IGBT has a front side contact, a rear side contact, and a semiconductor volume disposed between the front side contact and the rear side contact. The semiconductor volume includes a field stop layer for spatially delimiting an electric field that can be formed in the semiconductor volume. The semiconductor volume further includes a plurality of semiconductor zones, the plurality of semiconductor zones spaced apart from each other and each inversely doped with respect to adjacent areas. The plurality of semiconductor zones are located within the field stop layer.

摘要翻译： IGBT形式的半导体器件具有前侧触点，后侧触点和设置在前侧触点和后侧触点之间的半导体体。 半导体体积包括用于空间地限定可以形成在半导体体积中的电场的场停止层。 半导体体积还包括多个半导体区域，多个半导体区域彼此间隔开并且相对于相邻区域反向掺杂。 多个半导体区域位于场停止层内。

公开(公告)号：US07560783B2

公开(公告)日：2009-07-14

申请号：US11455397

申请日：2006-06-19

申请人： Holger Kapels ,  Anton Mauder ,  Hans-Joachim Schulze ,  Helmut Strack ,  Jenoe Tihanyi

发明人： Holger Kapels ,  Anton Mauder ,  Hans-Joachim Schulze ,  Helmut Strack ,  Jenoe Tihanyi

IPC分类号： H01L29/772

CPC分类号： H01L29/7805 ,  H01L21/28512 ,  H01L21/28568 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/32 ,  H01L29/456 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/8613

摘要： The present invention relates to a metal-semiconductor contact comprising a semiconductor layer and comprising a metallization applied to the semiconductor layer, a high dopant concentration being introduced into the semiconductor layer such that a non-reactive metal-semiconductor contact is formed between the metallization and the semiconductor layer. The metallization and/or the semiconductor layer are formed in such a way that only a fraction of the introduced doping concentration is electrically active, and a semiconductor layer doped only with this fraction of the doping concentration only forms a Schottky contact when contact is made with the metallization. Furthermore, the invention relates to a semiconductor component comprising a drain zone, body zones embedded therein and source zones again embedded therein. The semiconductor component has metal-semiconductor contacts in which the contacts made contact only with the source zones but not with the body zones.

摘要翻译： 本发明涉及包含半导体层并包含施加到半导体层的金属化的金属 - 半导体接触，将高掺杂浓度引入到半导体层中，使得在金属化和金属化之间形成非反应性金属 - 半导体接触 半导体层。 金属化和/或半导体层以这样的方式形成，使得只有一部分引入的掺杂浓度是电活性的，并且仅当这一部分掺杂浓度掺杂的半导体层仅在与...接触时形成肖特基接触 金属化。 此外，本发明涉及一种半导体部件，其包括漏区，嵌入其中的主体区和再次嵌入其中的源区。 半导体部件具有金属半导体触点，触点仅与源极区域接触而不与主体区域接触。

公开(公告)号：US20090130806A1

公开(公告)日：2009-05-21

申请号：US12350776

申请日：2009-01-08

申请人： Stefan Sedlmaier ,  Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Frank Pfirsch

发明人： Stefan Sedlmaier ,  Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Frank Pfirsch

IPC分类号： H01L21/336

CPC分类号： H01L29/7811 ,  H01L21/2205 ,  H01L21/2252 ,  H01L21/2255 ,  H01L23/291 ,  H01L23/298 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/1095 ,  H01L29/1604 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.

摘要翻译： 具有电荷补偿结构的半导体部件具有在两个电极之间具有漂移路径的半导体本体。 漂移路径具有第一导电类型的漂移区域，其在漂移路径中的电极之间提供电流路径，而互补导电类型的电荷补偿区域限制漂移路径的电流路径。 为此，漂移路径具有两个交替布置的外延生长的扩散区类型，第一漂移区类型在单晶衬底上具有单晶半导体材料，以及在沟槽结构中具有单晶半导体材料的第二漂移区类型，具有互补掺杂 壁，形成电荷补偿区的互补掺杂壁。

公开(公告)号：US20080265315A1

公开(公告)日：2008-10-30

申请号：US12112710

申请日：2008-04-30

申请人： Anton Mauder ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0611 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/7397

摘要： A semiconductor device with a semiconductor body and to a method for producing it. In one embodiment, the semiconductor body has first electrodes which contact first highly doped semiconductor zones and complementary-conduction body zones surrounding the first semiconductor zones. The semiconductor body has a second electrode which contacts a second highly doped semiconductor zone. Between the second semiconductor zone and the body zones, a drift zone is arranged. Control electrodes which are insulated from the semiconductor body by a gate oxide and act on the body zones for controlling the semiconductor device are arranged on the semiconductor body. The body zones have minority charge carrier injector zones with complementary conduction to the body zones, arranged between the first semiconductor zones and the drift zone.

摘要翻译： 具有半导体本体的半导体器件及其制造方法。 在一个实施例中，半导体本体具有接触第一高度掺杂半导体区域和围绕第一半导体区域的互补导电体区域的第一电极。 半导体本体具有接触第二高掺杂半导体区的第二电极。 在第二半导体区域和体区之间布置漂移区。 通过栅极氧化物与半导体本体绝缘并作用于体区的用于控制半导体器件的控制电极被布置在半导体本体上。 身体区域具有少数电荷载体注射器区域，其布置在第一半导体区域和漂移区域之间，与身体区域互补导电。

公开(公告)号：US20080197441A1

公开(公告)日：2008-08-21

申请号：US12021736

申请日：2008-01-29

申请人： Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Hans-Joachim Schulze

IPC分类号： H01L23/58 ,  H01L21/762

CPC分类号： H01L21/76224 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/161 ,  H01L29/165 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/7831

摘要： A semiconductor component with vertical structures having a high aspect ratio and method. In one embodiment, a drift zone is arranged between a first and a second component zone. A drift control zone is arranged adjacent to the drift zone in a first direction. A dielectric layer is arranged between the drift zone and the drift control zone wherein the drift zone has a varying doping and/or a varying material composition at least in sections proceeding from the dielectric.

摘要翻译： 具有高纵横比和垂直结构的半导体元件。 在一个实施例中，漂移区布置在第一和第二组分区之间。 漂移控制区在第一方向上布置成与漂移区相邻。 电介质层布置在漂移区和漂移控制区之间，其中漂移区具有至少在从电介质进行的部分中的变化的掺杂和/或变化的材料组成。

公开(公告)号：US20080067626A1

公开(公告)日：2008-03-20

申请号：US11834154

申请日：2007-08-06

申请人： Franz Hirler ,  Thoralf Kautzsch ,  Anton Mauder ,  Michael Rueb ,  Hans-Joachim Schulze ,  Helmut Strack ,  Armin Willmeroth

发明人： Franz Hirler ,  Thoralf Kautzsch ,  Anton Mauder ,  Michael Rueb ,  Hans-Joachim Schulze ,  Helmut Strack ,  Armin Willmeroth

IPC分类号： H01L29/94 ,  H01L21/76

CPC分类号： H01L21/76224 ,  H01L21/3247 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/66621 ,  H01L29/7803 ,  H01L29/7804

摘要： A semiconductor device, in which a first trench section is produced proceeding from a surface of a semiconductor body into the semiconductor body. A semiconductor layer is produced above the surface and above the first trench section. A further trench section is produced in the semiconductor layer in such a way that the first trench section and the further trench section form a continuous trench structure.

摘要翻译： 一种半导体器件，其中制造从半导体本体的表面进入半导体本体的第一沟槽部分。 在表面上方和第一沟槽部分之上产生半导体层。 在半导体层中产生另一沟槽部分，使得第一沟槽部分和另外的沟槽部分形成连续的沟槽结构。

公开(公告)号：US20070069257A1

公开(公告)日：2007-03-29

申请号：US11521075

申请日：2006-09-14

申请人： Anton Mauder ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L29/76

CPC分类号： H01L29/7397 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/872

摘要： A power semiconductor component includes a semiconductor body and a field electrode. The semiconductor body has a drift zone of a first conduction type and a further component defining a junction therebetween. The junction is configured to cause a space charge zone to propagate when a reverse voltage is applied to the junction. The field electrode is arranged adjacent to the drift zone, and is insulated from the semiconductor body by at least a dielectric layer. The dielectric layer has a first section and a second section, the first section arranged nearer to the junction and having a higher dielectric constant than the second section.

摘要翻译： 功率半导体部件包括半导体本体和场电极。 半导体本体具有第一导电类型的漂移区和限定它们之间的连接的另外的元件。 结点被配置为当反向电压施加到结点时使空间电荷区传播。 场电极被布置成与漂移区相邻，并且通过至少介电层与半导体本体绝缘。 电介质层具有第一部分和第二部分，第一部分布置成更靠近结并且具有比第二部分更高的介电常数。

公开(公告)号：US20050133857A1

公开(公告)日：2005-06-23

申请号：US11016963

申请日：2004-12-20

申请人： Anton Mauder ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/739 ,  H01L29/861 ,  H01L29/76

CPC分类号： H01L29/402 ,  H01L29/0834 ,  H01L29/7395 ,  H01L29/861

摘要： A vertical semiconductor component having a semiconductor body, which has an inner region and an edge region that is arranged between the inner region and an edge of the semiconductor body. At least one semiconductor junction between a first semiconductor zone of a first conduction type, said first semiconductor zone being arranged in the region of a first side of the semiconductor body in the inner region, and a second semiconductor zone of the second conduction type, said second semiconductor zone adjoining the first semiconductor zone in the vertical direction. A contiguous third semiconductor zone of the second conduction type, said third semiconductor zone being arranged at a distance from the first semiconductor zone in the second semiconductor zone in the vertical direction of the semiconductor body and extending as far as the edge region in the lateral direction of the semiconductor body, and the doping of the third semiconductor zone being selected in such a manner that it is completely depleted of charge carriers when a reverse voltage is applied to the pn junction.

摘要翻译： 一种具有半导体本体的垂直半导体部件，其具有布置在半导体本体的内部区域和边缘之间的内部区域和边缘区域。 在第一导电类型的第一半导体区域之间的至少一个半导体结，所述第一半导体区域布置在所述内部区域中的所述半导体本体的第一侧的区域中，以及所述第二导电类型的第二半导体区域， 第二半导体区在垂直方向上邻接第一半导体区。 第二导电类型的连续的第三半导体区域，所述第三半导体区域在半导体本体的垂直方向上与所述第二半导体区域中的所述第一半导体区域一定距离设置，并且在横向方向上延伸至所述边缘区域 并且以这样的方式选择第三半导体区域的掺杂，使得当向pn结施加反向电压时，其完全耗尽电荷载流子。