公开(公告)号：US11187654B2

公开(公告)日：2021-11-30

申请号：US16944946

申请日：2020-07-31

Applicant: Applied Materials, Inc.

Inventor： Guoheng Zhao ,  Mehdi Vaez-Iravani ,  Todd J. Egan

IPC: G01N21/55

Abstract: An imaging reflectometer includes a source module configured to generate a plurality of input beams at different nominal wavelengths. An illumination pupil having a first numerical aperture (NA) is arranged so that each of the plurality of input beams passes through the illumination pupil. A large field lens is configured to receive at least a portion of each of the plurality of input beams and provide substantially telecentric illumination over a sample being imaged. The large field lens is also configured to receive reflected portions of the substantially telecentric illumination reflected from the sample. The reflected portions pass through an imaging pupil having a second NA that is lower than the first NA and are received by an imaging sensor module that generates image information.

公开(公告)号：US20210366143A1

公开(公告)日：2021-11-25

申请号：US16877866

申请日：2020-05-19

Applicant: Applied Materials, Inc.

Inventor： Mehdi Vaez-Iravani ,  Guoheng Zhao

IPC: G06T7/68 ,  G06T7/00

Abstract: Methods for detecting areas of localized tilt on a sample using imaging reflectometry measurements include obtaining a first image without blocking any light reflected from the sample and obtaining a second image while blocking some light reflected from the sample at the aperture plane. The areas of localized tilt are detected by comparing first reflectance intensity values of pixels in the first image with second reflectance intensity values of corresponding pixels in the second image.

公开(公告)号：US10705431B2

公开(公告)日：2020-07-07

申请号：US16509675

申请日：2019-07-12

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis Bencher ,  Joseph R. Johnson ,  David Markle ,  Mehdi Vaez-Iravani

IPC: G03F7/20 ,  G02B27/28 ,  G02B26/08 ,  G02B5/30 ,  G02F1/13

Abstract: Embodiments of the present disclosure provide methods for producing images on substrates. The method includes providing a p-polarization beam to a first mirror cube having a first digital micromirror device (DMD), providing an s-polarization beam to a second mirror cube having a second DMD, and reflecting the p-polarization beam off the first DMD and reflecting the s-polarization beam off the second DMD such that the p-polarization beam and the s-polarization beam are reflected towards a light altering device configured to produce a plurality of superimposed images on the substrate.

公开(公告)号：US10394130B2

公开(公告)日：2019-08-27

申请号：US15207991

申请日：2016-07-12

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis Bencher ,  Joseph R. Johnson ,  Dave Markle ,  Mehdi Vaez-Iravani

IPC: G03F7/20 ,  G02B27/28 ,  G02B26/08 ,  G02B5/30 ,  G02F1/13

Abstract: The present disclosure provides a method for producing an image on a substrate. The method includes providing a single beam of light to a multiple DMD assembly, splitting the single beam of light into an s-polarization beam and a p-polarization beam, and reflecting the s-polarization beam and the p-polarization beam through the multiple DMD assembly such that the multiple DMD assembly produces a plurality of superimposed images on the substrate.

公开(公告)号：US10281261B2

公开(公告)日：2019-05-07

申请号：US15184276

申请日：2016-06-16

Applicant: Applied Materials, Inc.

Inventor： Khokan C. Paul ,  Edward Budiarto ,  Todd Egan ,  Mehdi Vaez-Iravani ,  Jeongmin Lee ,  Dale R. Du Bois ,  Terrance Y. Lee

IPC: G01B11/06 ,  H01L21/66 ,  G01B7/06 ,  C23C16/52 ,  C23C16/509 ,  H01J37/32 ,  H01L21/67

Abstract: Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.

公开(公告)号：US09978620B2

公开(公告)日：2018-05-22

申请号：US15584767

申请日：2017-05-02

Applicant: Applied Materials, Inc.

Inventor： Gary E. Dickerson ,  Seng (victor) Keong Lim ,  Samer Banna ,  Gregory Kirk ,  Mehdi Vaez-Iravani

IPC: H01L21/67 ,  H01L21/324 ,  H01L21/683 ,  H01L21/66 ,  H01L21/027

CPC classification number: H01L21/67248 ,  H01L21/0273 ,  H01L21/324 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/67253 ,  H01L21/6831 ,  H01L22/12

Abstract: Embodiments of the present disclosure relate to an apparatus and a method for reducing the adverse effects of exposing portions of an integrated circuit (IC) device to various forms of radiation during one or more operations found within the IC formation processing sequence by controlling the environment surrounding and temperature of an IC device during one or more parts of the IC formation processing sequence. The provided energy may include the delivery of radiation to a surface of a formed or a partially formed IC device during a deposition, etching, inspection or post-processing process operation. In some embodiments of the disclosure, the temperature of the substrate on which the IC device is formed is controlled to a temperature that is below room temperature (e.g.,

公开(公告)号：US09870935B2

公开(公告)日：2018-01-16

申请号：US14839656

申请日：2015-08-28

Applicant: Applied Materials, Inc.

Inventor： Edward W. Budiarto ,  Majeed A. Foad ,  Ralf Hofmann ,  Thomas Nowak ,  Todd Egan ,  Mehdi Vaez-Iravani

IPC: H01L21/00 ,  H01L21/67 ,  H01L21/02 ,  H01L21/033 ,  H01L21/285 ,  H01L21/66

CPC classification number: H01L21/67253 ,  G03F1/22 ,  G03F1/24 ,  H01L21/02631 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/2855 ,  H01L22/12 ,  H01L22/26

Abstract: A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.