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    Field effect device having a channel of nanofabric and methods of making same
    43.
    发明授权
    Field effect device having a channel of nanofabric and methods of making same 有权
    具有纳米通道的场效应器件及其制造方法

    公开(公告)号：US08362525B2

    公开(公告)日：2013-01-29

    申请号：US11332529

    申请日：2006-01-13

    申请人： Claude L. Bertin ,  Mitchell Meinhold ,  Steven L. Konsek ,  Thomas Rueckes ,  Frank Guo

    发明人： Claude L. Bertin ,  Mitchell Meinhold ,  Steven L. Konsek ,  Thomas Rueckes ,  Frank Guo

    IPC分类号： H01L21/335 ,  H01L21/336 ,  H01L29/76

    CPC分类号： B82Y10/00 ,  H01L21/823807 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0508 ,  H01L51/0541

    摘要： Field effect devices having channels of nanofabric and methods of making same. A nanotube field effect transistor is made to have a substrate, and a drain region and a source region in spaced relation relative to each other. A channel region is formed from a fabric of nanotubes, in which the nanotubes of the channel region are substantially all of the same semiconducting type of nanotubes. At least one gate is formed in proximity to the channel region so that the gate may be used to modulate the conductivity of the channel region so that a conductive path may be formed between the drain and source region. Forming a channel region includes forming a fabric of nanotubes in which the fabric has both semiconducting and metallic nanotubes and the fabric is processed to remove substantially all of the metallic nanotubes.

    摘要翻译： 具有纳米级通道的场效应器件及其制造方法。 使纳米管场效应晶体管具有衬底，以及相对于彼此间隔开的漏极区域和源极区域。 通道区域由纳米管的织物形成，其中沟道区的纳米管基本上都是相同的半导体类型的纳米管。 在通道区域附近形成至少一个栅极，使得栅极可用于调制沟道区域的导电性，使得可以在漏极和源极区域之间形成导电路径。 形成通道区域包括形成纳米管织物，其中织物具有半导体和金属纳米管，并且织物被处理以去除基本上所有的金属纳米管。

    COMPACT ELECTRICAL SWITCHING DEVICES WITH NANOTUBE ELEMENTS, AND METHODS OF MAKING SAME
    47.
    发明申请
    COMPACT ELECTRICAL SWITCHING DEVICES WITH NANOTUBE ELEMENTS, AND METHODS OF MAKING SAME 有权
    具有纳米元件的紧凑型电气开关装置及其制造方法

    公开(公告)号：US20110156009A1

    公开(公告)日：2011-06-30

    申请号：US12651288

    申请日：2009-12-31

    申请人： H. Montgomery Manning ,  Thomas Rueckes ,  Claude L. Bertin

    发明人： H. Montgomery Manning ,  Thomas Rueckes ,  Claude L. Bertin

    IPC分类号： H01L51/10 ,  H01L51/40

    CPC分类号： B82Y10/00 ,  G11C13/025 ,  H01L27/24 ,  H01L29/0665 ,  H01L29/43 ,  H01L51/0048 ,  Y10S977/742 ,  Y10S977/936

    摘要： An electrical device includes a substrate; first and second active areas; first and second word lines disposed in a first plane; first and second bit lines in a second plane and in electrical communication with first and second active areas; and a reference line disposed in a third plane. A nanotube element disposed in a fourth plane is in electrical communication with first and second active areas and the reference line via electrical connections at a first surface of the nanotube element. The nanotube element includes first and second regions having resistance states that are independently adjustable in response to electrical stimuli, wherein the first and second regions nonvolatilely retain the resistance states. Arrays of such electrical devices can be formed as nonvolatile memory devices. Methods for fabricating such devices are also disclosed.

    摘要翻译： 电气装置包括基板; 第一和第二活跃区域; 布置在第一平面中的第一和第二字线; 第一和第二位线在第二平面中并且与第一和第二有效区域电连通; 以及设置在第三平面中的参考线。 设置在第四平面中的纳米管元件通过在纳米管元件的第一表面处的电连接与第一和第二有源区域和参考线路电连通。 纳米管元件包括具有响应于电刺激可独立调节的电阻状态的第一和第二区域，其中第一和第二区域非常地保持电阻状态。 这种电气装置的阵列可以形成为非易失性存储装置。 还公开了制造这种装置的方法。

    Method of fabricating a patterned nanoscopic article
    48.
    发明授权
    Method of fabricating a patterned nanoscopic article 有权
    制造图案化纳米镜制品的方法

    公开(公告)号：US07948082B2

    公开(公告)日：2011-05-24

    申请号：US12195675

    申请日：2008-08-21

    申请人： Brent M. Segal ,  Thomas Rueckes ,  Claude L. Bertin

    发明人： Brent M. Segal ,  Thomas Rueckes ,  Claude L. Bertin

    IPC分类号： H01L23/48 ,  H01L21/302 ,  D01F9/12

    CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0023 ,  H01L2924/0002 ,  Y10S977/724 ,  Y10S977/762 ,  Y10S977/767 ,  Y10S977/856 ,  H01L2924/00

    摘要： Nanowire articles and methods of making the same are disclosed. A conductive article includes a plurality of inter-contacting nanowire segments that define a plurality of conductive pathways along the article. The nanowire segments may be semiconducting nanowires, metallic nanowires, nanotubes, single walled carbon nanotubes, multi-walled carbon nanotubes, or nanowires entangled with nanotubes. The various segments may have different lengths and may include segments having a length shorter than the length of the article. A strapping material may be positioned to contact a portion of the plurality of nanowire segments. The strapping material may be patterned to create the shape of a frame with an opening that exposes an area of the nanowire fabric. Such a strapping layer may also be used for making electrical contact to the nanowire fabric especially for electrical stitching to lower the overall resistance of the fabric.

    摘要翻译： 公开了纳米线制品及其制造方法。 导电制品包括沿着制品限定多个导电通路的多个接触接触的纳米线段。 纳米线段可以是半导体纳米线，金属纳米线，纳米管，单壁碳纳米管，多壁碳纳米管或与纳米管缠结的纳米线。 各个片段可以具有不同的长度，并且可以包括长度短于制品的长度的片段。 捆扎材料可以被定位成接触多个纳米线段的一部分。 捆扎材料可以被图案化以产生具有暴露纳米线织物的区域的开口的框架的形状。 这种捆扎层也可以用于与纳米线织物的电接触，特别是用于电缝合以降低织物的整体阻力。