公开(公告)号：US11342313B2

公开(公告)日：2022-05-24

申请号：US16950142

申请日：2020-11-17

Applicant: Cree, Inc.

Inventor： John Edmond ,  Matthew Donofrio ,  Jesse Reiherzer ,  Peter Scott Andrews ,  Joseph G. Clark ,  Kevin Haberern

IPC: H01L25/075 ,  H01L25/00 ,  H01L27/15 ,  H01L33/46 ,  H01L33/50 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L33/38 ,  H01L33/44 ,  H01L33/00

Abstract: At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.

公开(公告)号：US20210225652A1

公开(公告)日：2021-07-22

申请号：US17225384

申请日：2021-04-08

Applicant: Cree, Inc.

Inventor： Matthew Donofrio ,  John Edmond ,  Hua-Shuang Kong ,  Elif Balkas

IPC: H01L21/18 ,  H01L21/20 ,  B23K26/00 ,  H01L21/02

Abstract: A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 μm thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25° C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.

公开(公告)号：US11034056B2

公开(公告)日：2021-06-15

申请号：US16784311

申请日：2020-02-07

Applicant: Cree, Inc.

Inventor： Simon Bubel ,  Matthew Donofrio ,  John Edmond ,  Ian Currier

IPC: B28D5/00 ,  H01L29/16

Abstract: Silicon carbide (SiC) wafers and related methods are disclosed that include intentional or imposed wafer shapes that are configured to reduce manufacturing problems associated with deformation, bowing, or sagging of such wafers due to gravitational forces or from preexisting crystal stress. Intentional or imposed wafer shapes may comprise SiC wafers with a relaxed positive bow from silicon faces thereof. In this manner, effects associated with deformation, bowing, or sagging for SiC wafers, and in particular for large area SiC wafers, may be reduced. Related methods for providing SiC wafers with relaxed positive bow are disclosed that provide reduced kerf losses of bulk crystalline material. Such methods may include laser-assisted separation of SiC wafers from bulk crystalline material.

公开(公告)号：US11024501B2

公开(公告)日：2021-06-01

申请号：US16274045

申请日：2019-02-12

Applicant: Cree, Inc.

Inventor： Matthew Donofrio ,  John Edmond ,  Hua-Shuang Kong ,  Elif Balkas

IPC: C30B33/02 ,  H01L21/18 ,  H01L21/20 ,  B23K26/00 ,  H01L21/02

Abstract: A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 μm thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25° C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.

公开(公告)号：US10529696B2

公开(公告)日：2020-01-07

申请号：US15399729

申请日：2017-01-05

Applicant: Cree, Inc.

Inventor： John Edmond ,  Matthew Donofrio ,  Jesse Reiherzer ,  Peter Scott Andrews ,  Joseph G. Clark ,  Kevin Haberern

IPC: H01L25/075 ,  H01L27/15 ,  H01L33/50 ,  H01L33/56 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L33/46 ,  H01L25/00 ,  H01L33/00 ,  H01L33/38 ,  H01L33/44

Abstract: At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.

公开(公告)号：US10439107B2

公开(公告)日：2019-10-08

申请号：US14053404

申请日：2013-10-14

Applicant: CREE, INC.

Inventor： Sten Heikman ,  James Ibbetson ,  Zhimin Jamie Yao ,  Fan Zhang ,  Matthew Donofrio ,  Christopher P. Hussell ,  John A. Edmond

IPC: H01L33/44 ,  H01L33/50 ,  H01L33/00 ,  H01L33/20 ,  H01L33/48

Abstract: This disclosure relates to light emitting devices and methods of manufacture thereof, including side and/or multi-surface light emitting devices. Embodiments according to the present disclosure include the use of a functional layer, which can comprise a stand-off distance with one or more portions of the light emitter to improve the functional layer's stability during further device processing. The functional layer can further comprise winged portions allowing for the coating of the lower side portions of the light emitter to further interact with emitted light and a reflective layer coating on the functional layer to further improve light extraction and light emission uniformity. Methods of manufacture including methods utilizing virtual wafer structures are also disclosed.

公开(公告)号：US20190273070A1

公开(公告)日：2019-09-05

申请号：US16414162

申请日：2019-05-16

Applicant: Cree, Inc.

Inventor： John Edmond ,  Matthew Donofrio ,  Jesse Reiherzer ,  Peter Scott Andrews ,  Joseph G. Clark ,  Kevin Haberern

IPC: H01L25/075 ,  H01L33/50 ,  H01L27/15 ,  H01L33/46 ,  H01L25/00 ,  H01L33/62 ,  H01L33/60 ,  H01L33/58

Abstract: At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.

公开(公告)号：US10083885B1

公开(公告)日：2018-09-25

申请号：US15614924

申请日：2017-06-06

Applicant: Cree, Inc.

Inventor： Matthew Donofrio

IPC: H01L23/053 ,  F21V29/507 ,  F21V21/30 ,  H01L23/24 ,  H01L23/043 ,  F21V19/00 ,  H01L23/00 ,  F21V29/70

CPC classification number: H01L23/053 ,  F21V7/0008 ,  F21V19/003 ,  F21V21/30 ,  F21V23/006 ,  F21V29/507 ,  F21V29/508 ,  F21V29/70 ,  F21V29/77 ,  F21V31/04 ,  F21Y2103/10 ,  F21Y2115/10 ,  H01L23/043 ,  H01L23/24 ,  H01L24/49 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/351 ,  H05K1/0271 ,  H05K3/284 ,  H05K2201/10106 ,  H05K2203/1322

Abstract: An electronics module, such as driver modules for LED-based lighting fixtures and the like, includes a printed circuit board (PCB), a stress mitigation layer, and a potting layer. The PCB has a plurality of vias, which extend through the printed circuit board. A plurality of electronic components may each have a body and a plurality of leads extending from the body and through corresponding ones of the plurality of vias, wherein solder joints electrically and mechanically affix the plurality of leads within the corresponding ones of the plurality of vias. The stress mitigation layer is applied over a top surface of the printed circuit board. The potting layer is applied over the stress mitigation layer and the plurality of electronic components.

公开(公告)号：US20160189954A1

公开(公告)日：2016-06-30

申请号：US14587024

申请日：2014-12-31

Applicant: Cree, Inc.

Inventor： Hua-Shuang Kong ,  John A. Edmond ,  Matthew Donofrio ,  Michael J. Bergmann ,  David B. Slater, JR.

IPC: H01L21/02 ,  H01L21/683 ,  H01L21/78

CPC classification number: H01L21/6835 ,  H01L21/78 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6835 ,  H01L2221/68381

Abstract: Semiconductor devices are fabricated by providing a growth substrate having a thickness within a preselected range and then bonding a lower surface of the growth substrate to an upper surface of the carrier substrate to form a composite substrate. One or more semiconductor growth processes are performed at one or more growth temperatures of at least 500° C. to form one or more semiconductor layers on an upper surface of the composite substrate. The growth substrate is separated from the carrier substrate after the one or more semiconductor growth processes are completed so that the carrier substrate may be reused with a second growth substrate.

Abstract translation: 通过提供具有预定范围内的厚度的生长衬底然后将生长衬底的下表面粘合到载体衬底的上表面以形成复合衬底来制造半导体器件。 在至少500℃的一个或多个生长温度下进行一个或多个半导体生长工艺，以在复合衬底的上表面上形成一个或多个半导体层。 在一个或多个半导体生长过程完成之后，将生长衬底与载体衬底分离，使得载体衬底可以与第二生长衬底重复使用。

公开(公告)号：US20140217443A1

公开(公告)日：2014-08-07

申请号：US14053404

申请日：2013-10-14

Applicant: CREE, INC.

Inventor： Sten Heikman ,  James Ibbetson ,  Zhimin Jamie Yao ,  Fan Zhang ,  Matthew Donofrio ,  Christopher P. Hussell ,  John A. Edmond

IPC: H01L33/50 ,  H01L33/60

CPC classification number: H01L33/50 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/44 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

Abstract: This disclosure relates to light emitting devices and methods of manufacture thereof, including side and/or multi-surface light emitting devices. Embodiments according to the present disclosure include the use of a functional layer, which can comprise a stand-off distance with one or more portions of the light emitter to improve the functional layer's stability during further device processing. The functional layer can further comprise winged portions allowing for the coating of the lower side portions of the light emitter to further interact with emitted light and a reflective layer coating on the functional layer to further improve light extraction and light emission uniformity. Methods of manufacture including methods utilizing virtual wafer structures are also disclosed.

Abstract translation: 本公开涉及发光器件及其制造方法，包括侧面和/或多面发光器件。 根据本公开的实施例包括使用功能层，其可以包括与发光器的一个或多个部分的间隔距离，以在进一步的器件处理期间提高功能层的稳定性。 功能层可以进一步包括翼状部分，允许光发射器的下侧部分的涂覆进一步与发射的光和功能层上的反射层涂层相互作用，以进一步改善光提取和发光均匀性。 还公开了包括使用虚拟晶片结构的方法的制造方法。