公开(公告)号：US20240035157A1

公开(公告)日：2024-02-01

申请号：US18229077

申请日：2023-08-01

Applicant: ENTEGRIS, INC.

Inventor： Robert Wright, JR. ,  Thomas H. Baum ,  Bryan C. Hendrix ,  Shawn D. Nguyen ,  Han Wang ,  Philip S. H. Chen

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/56 ,  C23C16/18

CPC classification number: C23C16/45534 ,  H01L21/0228 ,  C23C16/56 ,  C23C16/18

Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.

公开(公告)号：US20240002081A1

公开(公告)日：2024-01-04

申请号：US18214241

申请日：2023-06-26

Applicant: ENTEGRIS, INC.

Inventor： Benjamin H. Olson ,  Dalton Vance Locklear ,  Bryan C. Hendrix ,  Jacob Thomas ,  Aniket Joshi ,  Scott L. Battle ,  Benjamin Cardozo ,  Benjamin R. Garrett ,  Juan Valdez ,  Michael Watson

IPC: B65B1/22 ,  B65B1/06

CPC classification number: B65B1/22 ,  B65B1/06

Abstract: A system including a vessel for containing a fill material and a vibration source connected to the vessel. The vibration source can increase a bulk density of the fill material. A fill material ratio can be defined as a particle density of the fill material divided by the bulk density of the fill material after vibration. After the vibration source increases the bulk density of the fill material, the fill material ratio can range from about 0.15 to about 0.75.

公开(公告)号：US20230366085A1

公开(公告)日：2023-11-16

申请号：US18197051

申请日：2023-05-13

Applicant: ENTEGRIS, INC.

Inventor： Benjamin Harrison Olson ,  Jacob Thomas ,  Scott L. Battle ,  Bryan C. Hendrix ,  Dalton Vance Locklear ,  Aniket Joshi ,  Christopher Calhoun

IPC: C23C16/448 ,  C23C16/08

CPC classification number: C23C16/4485 ,  C23C16/08

Abstract: A tray assembly comprises a plurality of trays. Each of the plurality of trays comprises a first tray portion and a second tray portion which are couplable together by a retainer and which are engageable with a cam member. Depending on the orientation of the cam member, each of the plurality of trays of the tray assembly is configurable between an expanded configuration and a collapsed configuration. In the collapsed configuration, the tray assembly is insertable into an ampoule. In the expanded configuration, the tray assembly is removable from an ampoule.

公开(公告)号：US11746413B2

公开(公告)日：2023-09-05

申请号：US17829007

申请日：2022-05-31

Applicant: ENTEGRIS, INC.

Inventor： David James Eldridge ,  David Peters ,  Robert Wright, Jr. ,  Bryan C. Hendrix ,  Scott L. Battle ,  John Gregg

IPC: C23C16/40 ,  C23C16/448 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/4487 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45561 ,  C23C16/52 ,  H01L21/02271 ,  H01L21/67017

Abstract: A chemical delivery system includes a bulk container, a run/refill chamber, a first conduit and a second conduit. The bulk container stores a precursor. The run/refill chamber includes a plurality of spaced tubes having a plurality of surfaces for receiving the precursor in vapor form and storing the precursor in solid form. The first conduit connects the bulk container to the run/refill chamber for transporting the precursor from the bulk container to the run/refill chamber in vapor form. The second conduit connects the run/refill chamber to a deposition chamber for transporting the precursor from the run/refill chamber to the deposition chamber in vapor form.

公开(公告)号：US11621148B2

公开(公告)日：2023-04-04

申请号：US17024261

申请日：2020-09-17

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Bryan C. Hendrix ,  Oleg Byl ,  Sharad N. Yedave

IPC: H01J37/32 ,  C23C14/48 ,  C23C14/06

Abstract: Described are plasma immersion ion implantation methods that use multiple precursor gases, particularly for the purpose of controlling an amount of a specific atomic dopant species that becomes implanted into a workpiece relative to other atomic species that also become implanted into the workpiece during the implantation process.

公开(公告)号：US11466038B2

公开(公告)日：2022-10-11

申请号：US16899060

申请日：2020-06-11

Applicant: ENTEGRIS, INC.

Inventor： Philip S. H. Chen ,  Eric Condo ,  Bryan C. Hendrix ,  Thomas H. Baum ,  David Kuiper

IPC: C07F7/18 ,  C07F7/10 ,  C01B21/082 ,  C07F7/08 ,  C23C16/455 ,  H01L21/02 ,  C23C16/36 ,  C23C16/30

Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

公开(公告)号：US20210370259A1

公开(公告)日：2021-12-02

申请号：US17398891

申请日：2021-08-10

Applicant: ENTEGRIS, INC.

Inventor： Lawrence H. Dubois ,  Donald J. Carruthers ,  Melissa A. Petruska ,  Edward A. Sturm ,  Shaun M. Wilson ,  Steven M. Lurcott ,  Bryan C. Hendrix ,  Joseph D. Sweeney ,  Michael J. Wodjenski ,  Oleg Byl ,  Ying Tang ,  Joseph R. Despres ,  Matthew Thomas Marlow ,  Christopher Scannell ,  Daniel Elzer ,  Kavita Murthi

IPC: B01J20/10 ,  B01J20/20 ,  B01J20/22 ,  B01J20/28 ,  F17C11/00 ,  H01L21/67 ,  B01J20/26 ,  B01J20/02

Abstract: Adsorbents of varying types and forms are described, as usefully employed in gas supply packages that include a gas storage and dispensing vessel holding such adsorbent for storage of sorbate gas thereon, and a gas dispensing assembly secured to the vessel for discharging the sorbate gas from the gas supply package under dispensing conditions thereof. Corresponding gas supply packages are likewise described, and various methods of processing the adsorbent, and manufacturing the gas supply packages.

公开(公告)号：US10793947B2

公开(公告)日：2020-10-06

申请号：US15674156

申请日：2017-08-10

Applicant: Entegris, Inc.

Inventor： Philip S. H. Chen ,  Bryan C. Hendrix ,  Thomas H. Baum

IPC: C23C16/16 ,  C23C16/30 ,  C23C16/02 ,  C23C16/18 ,  C07F15/06 ,  B32B15/04 ,  C22C19/07 ,  H01L21/768

Abstract: A deposited cobalt composition is described, including cobalt and one or more alloy component that is effective in combination with cobalt to enhance adhesion to a substrate when exposed on the substrate to variable temperature and/or delaminative force conditions, as compared to corresponding elemental cobalt, wherein the one or more alloy component is selected from the group consisting of boron, phosphorous, tin, antimony, indium, and gold. Such deposited cobalt composition may be employed for metallization in semiconductor devices and device precursor structures, flat-panel displays, and solar panels, and provides highly adherent metallization when the metallized substrate is subjected to thermal cycling and/or chemical mechanical planarization operations in the manufacturing of the semiconductor, flat-panel display, or solar panel product.

公开(公告)号：US20200206717A1

公开(公告)日：2020-07-02

申请号：US15773652

申请日：2016-11-04

Applicant: ENTEGRIS, INC.

Inventor： Lawrence H. Dubois ,  Donald J. Carruthers ,  Melissa A. Petruska ,  Edward A. Sturm ,  Shaun M. Wilson ,  Steven M. Lurcott ,  Bryan C. Hendrix ,  Joseph D. Sweeney ,  Michael J. Wodjenski ,  Oleg Byl ,  Ying Tang ,  Joseph R. Despres ,  Matthew Thomas Marlow ,  Christopher Scannell ,  Daniel Elzer ,  Kavita Murthi

IPC: B01J20/10 ,  B01J20/28 ,  B01J20/22 ,  B01J20/20 ,  H01L21/67 ,  F17C11/00

Abstract: Adsorbents of varying types and forms are described, as usefully employed in gas supply packages that include a gas storage and dispensing vessel holding such adsorbent for storage of sorbate gas thereon, and a gas dispensing assembly secured to the vessel for discharging the sorbate gas from the gas supply package under dispensing conditions thereof. Corresponding gas supply packages are likewise described, and various methods of processing the adsorbent, and manufacturing the gas supply packages.

公开(公告)号：US10043658B2

公开(公告)日：2018-08-07

申请号：US15862205

申请日：2018-01-04

Applicant: Entegris, Inc.

Inventor： William Hunks ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Weimin Li

IPC: H01L21/02 ,  H01L29/06

Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.