Manufacturing method of semiconductor integrated circuit device
    41.
    发明授权
    Manufacturing method of semiconductor integrated circuit device 失效
    半导体集成电路器件的制造方法

    公开(公告)号:US07598100B2

    公开(公告)日:2009-10-06

    申请号:US11719112

    申请日:2004-11-18

    CPC分类号: G01R1/0735 G01R3/00

    摘要: As the thickness of the card holder for preventing warping of a multilayered wiring substrate 1 is increased, there occurs a problem that a thin film sheet 2 is buried in a card holder and secure contact between probes 7 and test pads cannot be realized. For its prevention, the thin film sheet 2 and a bonding ring 6 are bonded in a state where a tensile force is applied only to the central region IA of the thin film sheet 2, and a tensile force is not applied to an outer peripheral region OA. Then, the height of the bonding ring 6 defining the height up to the probe surface of the thin film sheet 2 is increased, thereby increasing the height up to the probe surface of the thin film sheet 2.

    摘要翻译: 随着用于防止多层布线基板1翘曲的卡夹的厚度增加,存在薄膜片2被埋在卡夹中并且不能实现探针7和测试垫之间的牢固接触的​​问题。 为了防止,薄膜片2和接合环6在仅向薄膜片2的中心区域IA施加张力的状态下接合,并且拉伸力不施加到外围区域 OA。 然后,限定高达薄膜片2的探针表面的高度的接合环6的高度增加,从而增加高达薄膜片2的探针表面的高度。

    Method of manufacturing a semiconductor integrated circuit device
    42.
    发明授权
    Method of manufacturing a semiconductor integrated circuit device 有权
    制造半导体集成电路器件的方法

    公开(公告)号:US07537943B2

    公开(公告)日:2009-05-26

    申请号:US11866301

    申请日:2007-10-02

    IPC分类号: H01L21/66 G01R31/26

    摘要: A technique of manufacturing a semiconductor integrated circuit device is provided for reducing the possibility of attachment of foreign matter to a membrane probe when performing probe inspection using the membrane probe formed by the manufacturing technique. A pressing member for pressing a membrane sheet includes a pressing pin receiving portion relatively disposed above for receiving the tip of a pressing pin of the plunger in a recess, and a membrane sheet pressing portion relatively disposed below. The membrane sheet pressing portion in contact with the membrane sheet has the minimum plane size to enable pressing of the entire surface of one chip of interest to be subjected to the probe inspection.

    摘要翻译: 提供一种制造半导体集成电路器件的技术,用于在使用由该制造技术形成的膜探针进行探针检查时,减少将异物附着于膜探针的可能性。 用于挤压薄膜片的按压部件包括相对设置在上侧的压接销接收部,用于接收凹部中的柱塞的按压销的前端,以及相对设置在下方的膜片按压部。 与膜片接触的膜片按压部具有最小的平面尺寸,能够对要进行探头检查的一个感兴趣的芯片的整个表面进行按压。

    METHOD OF MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    44.
    发明申请
    METHOD OF MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
    制造半导体集成电路器件的方法

    公开(公告)号:US20080096295A1

    公开(公告)日:2008-04-24

    申请号:US11866301

    申请日:2007-10-02

    IPC分类号: H01L21/66

    摘要: A technique of manufacturing a semiconductor integrated circuit device is provided for reducing the possibility of attachment of foreign matter to a membrane probe when performing probe inspection using the membrane probe formed by the manufacturing technique. A pressing member for pressing a membrane sheet includes a pressing pin receiving portion relatively disposed above for receiving the tip of a pressing pin of the plunger in a recess, and a membrane sheet pressing portion relatively disposed below. The membrane sheet pressing portion in contact with the membrane sheet has the minimum plane size to enable pressing of the entire surface of one chip of interest to be subjected to the probe inspection.

    摘要翻译: 提供一种制造半导体集成电路器件的技术,用于在使用由该制造技术形成的膜探针进行探针检查时,减少将异物附着于膜探针的可能性。 用于挤压薄膜片的按压部件包括相对设置在上侧的压接销接收部,用于接收凹部中的柱塞的按压销的前端,以及相对设置在下方的膜片按压部。 与膜片接触的膜片按压部具有最小的平面尺寸,能够对要进行探头检查的一个感兴趣的芯片的整个表面进行按压。

    Sputtering target
    47.
    发明授权
    Sputtering target 失效
    溅射目标

    公开(公告)号:US5320729A

    公开(公告)日:1994-06-14

    申请号:US914469

    申请日:1992-07-17

    IPC分类号: C23C14/34

    CPC分类号: H01J37/3426 H01J37/3491

    摘要: Disclosed herein is a sputtering target with which a high resistivity thin film consisting of chromium, silicon and oxygen can be produced economically and stably for a long time. Also disclosed is a process for producing the sputtering target by selecting the grain size of a chromium (Cr) powder and a silicon dioxide (SiO.sub.2) powder, drying the powders sufficiently by heating, then mixing the dried powders to obtain a mixed powder containing generally from 20 to 80% by weight of chromium, most preferably from 50 to 80% by weight of chromium, the remainder being silicon dioxide, packing the mixed powder in a die, and sintering the packed powder by hot pressing or the like, to produce a desired sputtering target which has a two phase mixed structure. The sputtering target can be used for manufacture of thin film resistors and electric circuits.

    摘要翻译: 本文公开了一种溅射靶,其可以经济地且稳定地长时间生产由铬,硅和氧组成的高电阻率薄膜。 还公开了通过选择铬(Cr)粉末和二氧化硅(SiO 2)粉末的晶粒尺寸来制造溅射靶的方法,通过加热将粉末充分干燥,然后混合干燥粉末,得到通常含有的混合粉末 20至80重量%的铬,最优选为50至80重量%的铬,其余为二氧化硅,将混合粉末包装在模具中,并通过热压等烧结填充的粉末,以产生 具有两相混合结构的期望的溅射靶。 溅射靶可用于薄膜电阻和电路的制造。