公开(公告)号：US6080599A

公开(公告)日：2000-06-27

申请号：US89130

申请日：1998-06-02

申请人： Masahiro Yamamoto ,  Hidetoshi Fujimoto ,  Yoshihiro Kokubun ,  Masayuki Ishikawa ,  Shinji Saito ,  Yukie Nishikawa ,  John Rennie

发明人： Masahiro Yamamoto ,  Hidetoshi Fujimoto ,  Yoshihiro Kokubun ,  Masayuki Ishikawa ,  Shinji Saito ,  Yukie Nishikawa ,  John Rennie

IPC分类号： H01L21/203 ,  H01L21/301 ,  H01L21/31 ,  H01L33/06 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/34 ,  H01S5/00 ,  H01S5/02 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/327 ,  H01L33/00 ,  H01L21/786 ,  H01L21/86

CPC分类号： H01L33/20 ,  H01L33/16 ,  H01S5/0202 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/3226 ,  H01S5/32341 ,  Y10S438/973 ,  Y10S438/975

摘要： The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by depositing compound-semiconductor layers 13 and 14 on a monocrystalline substrate 11 of a hexagonal close-packed structure. The shape of the monocrystalline substrate 11 is a parallelogram. Individual sides of the parallelogram are parallel to a orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layer 13 and p-type GaN layer 14 may be used.

摘要翻译： 本发明旨在提供一种具有高发光效率的半导体光电器件及其制造方法。 根据本发明的半导体光电器件18通过将化合物半导体层13和14沉积在六方密堆积结构的单晶衬底11上而构成。 单晶衬底11的形状是平行四边形。 平行四边形的各个边平行于<11-20>方向。 作为单晶衬底，可以使用蓝宝石，氧化锌或碳化硅。 作为化合物半导体层，可以使用n型GaN层13和p型GaN层14。

公开(公告)号：US6057565A

公开(公告)日：2000-05-02

申请号：US937166

申请日：1997-09-25

申请人： Hiroaki Yoshida ,  Masayuki Ishikawa ,  Hidetoshi Fujimoto ,  Yoshihiro Kokubun ,  Genichi Hatakoshi

发明人： Hiroaki Yoshida ,  Masayuki Ishikawa ,  Hidetoshi Fujimoto ,  Yoshihiro Kokubun ,  Genichi Hatakoshi

IPC分类号： H01L33/14 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/14 ,  H01L33/325

摘要： In the semiconductor light emitting device, a high resistance layer formed by mutual diffusion at an interface with the substrate crystal can be eliminated, and a low resistance p-type contact can be realized. In addition, it is possible to reduce the leak current when an internal current-blocking structure is formed. In practice, a compound semiconductor layer offset in composition ratio stoichiometrically is used as the contact layer. Further, when a predetermined element is added to the contact layer, a large amount of doping can be enabled in comparison with when impurities are added to the ordinary GaN based layer. Therefore, a high concentration conductive type layer can be realized while reducing the contact resistance. In addition, when the compound semiconductor layer offset away from the stoichiometric composition is used as the current-blocking layer, the current-blocking efficiency can be improved. Further, when the substrate is irradiated with light having energy slightly higher than that of the band gap of the grown crystal in the photo-excitation MOCVD method in order to eliminate the rough surface, it is possible to realize the p-type conductive of high carrier concentration.

摘要翻译： 在半导体发光器件中，可以消除在与衬底晶体的界面处相互扩散形成的高电阻层，并且可以实现低电阻p型接触。 此外，当形成内部阻流结构时，可以减小泄漏电流。 实际上，化学计量组成比偏移的化合物半导体层用作接触层。 此外，当向接触层添加预定元素时，与将杂质添加到普通的GaN基层相比，可以实现大量的掺杂。 因此，可以在降低接触电阻的同时实现高浓度导电型层。 另外，当偏离化学计量组成的化合物半导体层用作电流阻挡层时，可以提高电流阻挡效率。 此外，为了消除粗糙表面，为了消除粗糙表面，当在光激发MOCVD方法中照射具有比生长晶体的带隙稍高的光的基板时，可以实现高的p型导电 载体浓度。

公开(公告)号：US05998810A

公开(公告)日：1999-12-07

申请号：US980256

申请日：1997-11-28

申请人： Ako Hatano ,  Yasuo Ohba ,  Hidetoshi Fujimoto ,  Kazuhiko Itaya ,  Johji Nishio

发明人： Ako Hatano ,  Yasuo Ohba ,  Hidetoshi Fujimoto ,  Kazuhiko Itaya ,  Johji Nishio

IPC分类号： H01S5/323 ,  H01L33/00

CPC分类号： H01S5/32341 ,  H01S2302/00

摘要： A semiconductor light-emitting diode exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor light-emitting diode is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.

摘要翻译： 表现出450nm以下的振荡波长的半导体发光二极管，其特征在于，具有基板，形成在所述基板上或上方的下部包层，主要由III-V族化合物半导体构成，所述活性层直接形成在所述下部 主要由III-V族化合物半导体构成的上层p型覆盖层和主要由III-V族化合物半导体构成的有源层上直接形成的上部p型覆盖层。 该半导体发光二极管的特征在于，上p型覆盖层含有Mg，Si和至少一种用于补偿残留供体的杂质。

公开(公告)号：US5966396A

公开(公告)日：1999-10-12

申请号：US900127

申请日：1997-07-25

申请人： Haruhiko Okazaki ,  Hidetoshi Fujimoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Masahiro Yamamoto

发明人： Haruhiko Okazaki ,  Hidetoshi Fujimoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Masahiro Yamamoto

IPC分类号： H01S5/042 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/32325 ,  H01S5/0422 ,  H01S5/2275 ,  H01S5/32341

摘要： A semiconductor laser is formed from a gallium nitride-based compound semiconductor material, and has a double-heterostructure portion obtained by sandwiching an active layer between an n-type cladding layer and a p-type cladding layer on a sapphire substrate. The double-heterostructure portion is formed into a mesa shape on the sapphire substrate via a GaN buffer layer. The two sides of this mesa structure are buried with GaN current blocking layers.

摘要翻译： 半导体激光器由氮化镓系化合物半导体材料形成，并且具有通过在蓝宝石衬底上的n型覆层和p型覆层之间夹持有源层而获得的双异质结构部。 双异质结构部分经由GaN缓冲层在蓝宝石衬底上形成台面形状。 这种台面结构的两面被GaN电流阻挡层掩埋。

公开(公告)号：US5932896A

公开(公告)日：1999-08-03

申请号：US924834

申请日：1997-09-05

申请人： Lisa Sugiura ,  Mariko Suzuki ,  Kazuhiko Itaya ,  Hidetoshi Fujimoto ,  Johji Nishio ,  John Rennie ,  Hideto Sugawara

发明人： Lisa Sugiura ,  Mariko Suzuki ,  Kazuhiko Itaya ,  Hidetoshi Fujimoto ,  Johji Nishio ,  John Rennie ,  Hideto Sugawara

IPC分类号： H01L29/12 ,  H01L21/205 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01L33/34 ,  H01L33/40 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

CPC分类号： H01L33/325 ,  B82Y20/00 ,  H01L33/025 ,  H01S5/32341 ,  H01S5/34333

摘要： The present invention provides a nitride system semiconductor device which decreases cost and improves productivity without heat treatment after the growth and which increases in lifetime and reliability by enhancing the quality of a p-type conductive layer, and a method for manufacturing the nitride system semiconductor device. The nitride system semiconductor device has a multilayer structure of an n-type In.sub.x Ga.sub.y Al.sub.z B.sub.1-x-y-z N.sub.m P.sub.n As.sub.1-m-n (0.ltoreq.x, 0.ltoreq.y, 0.ltoreq.z, 0.ltoreq.x+y+z.ltoreq.1, 0

摘要翻译： 本发明提供一种氮化物系半导体器件，其通过提高p型导电层的质量而降低成本并且在生长后不进行热处理而提高生产率，并且通过提高p型导电层的质量而增加寿命和可靠性，以及用于制造氮化物系半导体器件的方法 。 氮化物系半导体器件具有n型In x Ga y Al z B 1-xy-z N m P n As 1-m n（0≤x，0≤y，0≤z，0≤x+ y + z < 一个p型InxGayAlzB1-xy-zNmPnAs1-mn（0≤x，0≤y≤1,0

公开(公告)号：USD402969S

公开(公告)日：1998-12-22

申请号：US75916

申请日：1997-06-24

申请人： Hidetoshi Fujimoto

设计人： Hidetoshi Fujimoto

公开(公告)号：US5752217A

公开(公告)日：1998-05-12

申请号：US653268

申请日：1996-05-24

申请人： Takashi Ishizaki ,  Hidetoshi Fujimoto

发明人： Takashi Ishizaki ,  Hidetoshi Fujimoto

IPC分类号： G09B29/00 ,  G01C21/00 ,  G01C21/34 ,  G08G1/0968 ,  G08G1/0969

CPC分类号： G08G1/096861 ,  G01C21/3446 ,  G08G1/096872

摘要： Route costs are computed using the Dijkstra algorithm based on link information and connection information and a destination route is set based on a connection of links which has the least route cost. The route cost is set to sub-nodes of each connection link. Therefore, optimal routes can be set even though traffic regulations such as no right turns or the like exist on certain nodes.

摘要翻译： 使用基于链路信息和连接信息的Dijkstra算法来计算路由成本，并且基于具有最小路由成本的链路的连接来设置目的地路由。 路由成本设置为每个连接链路的子节点。 因此，即使在某些节点上存在诸如没有右转等的交通规则，也可以设定最优路线。

公开(公告)号：US5693963A

公开(公告)日：1997-12-02

申请号：US526700

申请日：1995-09-11

申请人： Hidetoshi Fujimoto ,  Koichi Nitta ,  Masayuki Ishikawa ,  Hideto Sugawara ,  Yoshihiro Kokubun ,  Masahiro Yamamoto

发明人： Hidetoshi Fujimoto ,  Koichi Nitta ,  Masayuki Ishikawa ,  Hideto Sugawara ,  Yoshihiro Kokubun ,  Masahiro Yamamoto

IPC分类号： H01L33/00 ,  H01L33/32

CPC分类号： H01L33/325 ,  H01L33/007

摘要： A light emitting diode is arranged on a sapphire substrate. The light emitting diode includes an n-GaN layer, an n-InGaN light-emitting layer, a p-AlGaN layer and a P-GaN layer, which are grown through vapor phase growth in this sequence. Within the p-GaN layer and p-AlGaN layer, 1.times.10.sup.20 cm.sup.-3 of Mg and 2.times.10.sup.19 cm.sup.-3 of Mg are contained, respectively. Within each of the n-GaN layer and n-InGaN light-emitting layer, 5.times.10.sup.18 cm.sup.-3 of hydrogen is contained, thereby preventing Mg from diffusing therein from the p-GaN layer and p-AlGaN layer.

摘要翻译： 发光二极管布置在蓝宝石衬底上。 发光二极管包括以这种顺序气相生长生长的n-GaN层，n-InGaN发光层，p-AlGaN层和P-GaN层。 在p-GaN层和p-AlGaN层内，分别含有1×10 20 cm -3的Mg和2×10 19 cm -3的Mg。 在n-GaN层和n-InGaN发光层的每一个中，含有5×10 18 cm -3的氢，从而防止Mg从p-GaN层和p-AlGaN层扩散。

公开(公告)号：US20130031049A1

公开(公告)日：2013-01-31

申请号：US13557567

申请日：2012-07-25

申请人： Takayuki Watanabe ,  Hidetoshi Fujimoto ,  Takamitsu Suzuki ,  Takayuki Suzuki ,  Kaoru Shibata ,  Akio Samizu

发明人： Takayuki Watanabe ,  Hidetoshi Fujimoto ,  Takamitsu Suzuki ,  Takayuki Suzuki ,  Kaoru Shibata ,  Akio Samizu

IPC分类号： G06F17/30

CPC分类号： G01C21/32 ,  G09B29/106

摘要： A map difference data generation apparatus includes: most recent and supplementary map data storage devices storing primary most recent and supplementary map data, respectively; a map update reflection device generating secondly most recent and supplementary map data according to an update of a first link, and generating tertiary most recent and supplementary map data according to an update of a second link; a determination device determining a dependency relationship between the update of the first and second links, in accordance with results of searching a route in the tertiary most recent and supplementary map data between first and second nodes, which are both ends of the second link; and a map difference data generation device generating map difference data, which defines a combination of the update of the first and second links, when the update of the first and second links have the dependency relationship.

摘要翻译： 地图差分数据生成装置包括：分别存储主要最新和附加地图数据的最新和补充地图数据存储装置; 地图更新反射装置，根据第一链路的更新生成第二最新和补充地图数据，并根据第二链路的更新生成第三最新和补充地图数据; 确定装置，根据在第三最新的路由搜索的结果和作为第二链路的两端的第一和第二节点之间的补充地图数据的结果来确定第一和第二链路的更新之间的依赖关系; 以及当所述第一和第二链路的更新具有依赖关系时，生成映射差异数据的地图差分数据生成装置，所述地图差分数据定义所述第一和第二链接的更新的组合。

公开(公告)号：US20120122258A1

公开(公告)日：2012-05-17

申请号：US13051518

申请日：2011-03-18

申请人： Koichi Nitta ,  Hidetoshi Fujimoto

发明人： Koichi Nitta ,  Hidetoshi Fujimoto

IPC分类号： H01L33/06

CPC分类号： H01L33/0095 ,  H01L33/007 ,  H01L33/22

摘要： One embodiment provides a method for manufacturing a semiconductor light emitting device, including: forming a semiconductor light emitting device wafer, by: forming a plurality of semiconductor layers on a principal surface of a substrate; and forming a P-type semiconductor layer on the semiconductor layers as an uppermost layer; and forming a plurality of surface irregularities on the P-type semiconductor layer, by putting the semiconductor light emitting device wafer into a heat treating furnace; and performing a heat treatment on the semiconductor light emitting device wafer with (i) a mixed gas of hydrogen and ammonia or (ii) a mixed gas of nitrogen and ammonia.

摘要翻译： 一个实施例提供一种用于制造半导体发光器件的方法，包括：通过以下方式形成半导体发光器件晶片：在衬底的主表面上形成多个半导体层; 在半导体层上形成P型半导体层作为最上层; 并且通过将半导体发光器件晶片放入热处理炉中，在P型半导体层上形成多个表面凹凸; 以及（i）氢和氨的混合气体或（ii）氮和氨的混合气体在半导体发光器件晶片上进行热处理。