公开(公告)号：US5693963A

公开(公告)日：1997-12-02

申请号：US526700

申请日：1995-09-11

申请人： Hidetoshi Fujimoto ,  Koichi Nitta ,  Masayuki Ishikawa ,  Hideto Sugawara ,  Yoshihiro Kokubun ,  Masahiro Yamamoto

发明人： Hidetoshi Fujimoto ,  Koichi Nitta ,  Masayuki Ishikawa ,  Hideto Sugawara ,  Yoshihiro Kokubun ,  Masahiro Yamamoto

IPC分类号： H01L33/00 ,  H01L33/32

CPC分类号： H01L33/325 ,  H01L33/007

摘要： A light emitting diode is arranged on a sapphire substrate. The light emitting diode includes an n-GaN layer, an n-InGaN light-emitting layer, a p-AlGaN layer and a P-GaN layer, which are grown through vapor phase growth in this sequence. Within the p-GaN layer and p-AlGaN layer, 1.times.10.sup.20 cm.sup.-3 of Mg and 2.times.10.sup.19 cm.sup.-3 of Mg are contained, respectively. Within each of the n-GaN layer and n-InGaN light-emitting layer, 5.times.10.sup.18 cm.sup.-3 of hydrogen is contained, thereby preventing Mg from diffusing therein from the p-GaN layer and p-AlGaN layer.

摘要翻译： 发光二极管布置在蓝宝石衬底上。 发光二极管包括以这种顺序气相生长生长的n-GaN层，n-InGaN发光层，p-AlGaN层和P-GaN层。 在p-GaN层和p-AlGaN层内，分别含有1×10 20 cm -3的Mg和2×10 19 cm -3的Mg。 在n-GaN层和n-InGaN发光层的每一个中，含有5×10 18 cm -3的氢，从而防止Mg从p-GaN层和p-AlGaN层扩散。

公开(公告)号：USRE44215E1

公开(公告)日：2013-05-14

申请号：US13270287

申请日：2011-10-11

申请人： Masahiro Yamamoto ,  Hidetoshi Fujimoto ,  Yoshihiro Kokubun ,  Masayuki Ishikawa ,  Shinji Saito ,  Yukie Nishikawa ,  John Rennie

发明人： Masahiro Yamamoto ,  Hidetoshi Fujimoto ,  Yoshihiro Kokubun ,  Masayuki Ishikawa ,  Shinji Saito ,  Yukie Nishikawa ,  John Rennie

IPC分类号： H01L33/00 ,  H01S5/20

CPC分类号： H01L33/20 ,  H01L33/16 ,  H01S5/0202 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/3226 ,  H01S5/32341 ,  Y10S438/973 ,  Y10S438/975

摘要： The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by depositing compound-semiconductor layers 13 and 14 on a monocrystalline substrate 11 of a hexagonal close-packed structure. The shape of the monocrystalline substrate 11 is a parallelogram. Individual sides of the parallelogram are parallel to a orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layer 13 and p-type GaN layer 14 may be used.

公开(公告)号：US5864171A

公开(公告)日：1999-01-26

申请号：US623829

申请日：1996-03-29

申请人： Masahiro Yamamoto ,  Hidetoshi Fujimoto ,  Yoshihiro Kokubun ,  Masayuki Ishikawa ,  Shinji Saito ,  Yukie Nishikawa ,  John Rennie

发明人： Masahiro Yamamoto ,  Hidetoshi Fujimoto ,  Yoshihiro Kokubun ,  Masayuki Ishikawa ,  Shinji Saito ,  Yukie Nishikawa ,  John Rennie

IPC分类号： H01L21/203 ,  H01L21/301 ,  H01L21/31 ,  H01L33/06 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/34 ,  H01S5/00 ,  H01S5/02 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/327 ,  H01L33/00 ,  H01S3/19

CPC分类号： H01L33/20 ,  H01L33/16 ,  H01S5/0202 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/3226 ,  H01S5/32341 ,  Y10S438/973 ,  Y10S438/975

摘要： The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by depositing compound-semiconductor layers 13 and 14 on a monocrystalline substrate 11 of a hexagonal close-packed structure. The shape of the monocrystalline substrate 11 is a parallelogram. Individual sides of the parallelogram are parallel to a orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layer 13 and p-type GaN layer 14 may be used.

公开(公告)号：US6080599A

公开(公告)日：2000-06-27

申请号：US89130

申请日：1998-06-02

申请人： Masahiro Yamamoto ,  Hidetoshi Fujimoto ,  Yoshihiro Kokubun ,  Masayuki Ishikawa ,  Shinji Saito ,  Yukie Nishikawa ,  John Rennie

发明人： Masahiro Yamamoto ,  Hidetoshi Fujimoto ,  Yoshihiro Kokubun ,  Masayuki Ishikawa ,  Shinji Saito ,  Yukie Nishikawa ,  John Rennie

IPC分类号： H01L21/203 ,  H01L21/301 ,  H01L21/31 ,  H01L33/06 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/34 ,  H01S5/00 ,  H01S5/02 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/327 ,  H01L33/00 ,  H01L21/786 ,  H01L21/86

CPC分类号： H01L33/20 ,  H01L33/16 ,  H01S5/0202 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/3226 ,  H01S5/32341 ,  Y10S438/973 ,  Y10S438/975

摘要： The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by depositing compound-semiconductor layers 13 and 14 on a monocrystalline substrate 11 of a hexagonal close-packed structure. The shape of the monocrystalline substrate 11 is a parallelogram. Individual sides of the parallelogram are parallel to a orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layer 13 and p-type GaN layer 14 may be used.

摘要翻译： 本发明旨在提供一种具有高发光效率的半导体光电器件及其制造方法。 根据本发明的半导体光电器件18通过将化合物半导体层13和14沉积在六方密堆积结构的单晶衬底11上而构成。 单晶衬底11的形状是平行四边形。 平行四边形的各个边平行于<11-20>方向。 作为单晶衬底，可以使用蓝宝石，氧化锌或碳化硅。 作为化合物半导体层，可以使用n型GaN层13和p型GaN层14。

公开(公告)号：US5780873A

公开(公告)日：1998-07-14

申请号：US689689

申请日：1996-08-13

申请人： Kazuhiko Itaya ,  Masahiro Yamamoto ,  Masaaki Onomura ,  Hidetoshi Fujimoto ,  Genichi Hatakoshi ,  Hideto Sugawara ,  Masayuki Ishikawa ,  John Rennie ,  Shinji Saito

发明人： Kazuhiko Itaya ,  Masahiro Yamamoto ,  Masaaki Onomura ,  Hidetoshi Fujimoto ,  Genichi Hatakoshi ,  Hideto Sugawara ,  Masayuki Ishikawa ,  John Rennie ,  Shinji Saito

IPC分类号： H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/14 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H01L33/00 ,  H01L29/04 ,  H01L31/036

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/0215 ,  H01S5/34333 ,  H01S5/0202 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/2231 ,  H01S5/2232 ,  H01S5/3202 ,  H01S5/32391 ,  H01S5/34326 ,  H01S5/4043 ,  H01S5/4087

摘要： A semiconductor light-emitting device comprises a semiconductor light-emitting device section of a hexagonal type; and an electrically conductive semiconductor substrate of a cubic type combined into the semiconductor light-emitting device, and having an orientation of its cleavage facet conformed to an orientation of the cleavage facet of one of semiconductor layers forming the semiconductor light-emitting device section. The substrate of the cubic type is cleaved so that the semiconductor light-emitting device section of the hexagonal type is induced to be cleaved, and that a mirror surface can be easily formed.

摘要翻译： 半导体发光器件包括六边形的半导体发光器件部分; 以及组合到半导体发光器件中的立方体的导电半导体衬底，并且其解理面的取向符合形成半导体发光器件部分的半导体层之一的解理面的取向。 立方体的基板被切割，使得六方型的半导体发光器件部分被诱导被切割，并且可以容易地形成镜面。

公开(公告)号：US6057565A

公开(公告)日：2000-05-02

申请号：US937166

申请日：1997-09-25

申请人： Hiroaki Yoshida ,  Masayuki Ishikawa ,  Hidetoshi Fujimoto ,  Yoshihiro Kokubun ,  Genichi Hatakoshi

发明人： Hiroaki Yoshida ,  Masayuki Ishikawa ,  Hidetoshi Fujimoto ,  Yoshihiro Kokubun ,  Genichi Hatakoshi

IPC分类号： H01L33/14 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/14 ,  H01L33/325

摘要： In the semiconductor light emitting device, a high resistance layer formed by mutual diffusion at an interface with the substrate crystal can be eliminated, and a low resistance p-type contact can be realized. In addition, it is possible to reduce the leak current when an internal current-blocking structure is formed. In practice, a compound semiconductor layer offset in composition ratio stoichiometrically is used as the contact layer. Further, when a predetermined element is added to the contact layer, a large amount of doping can be enabled in comparison with when impurities are added to the ordinary GaN based layer. Therefore, a high concentration conductive type layer can be realized while reducing the contact resistance. In addition, when the compound semiconductor layer offset away from the stoichiometric composition is used as the current-blocking layer, the current-blocking efficiency can be improved. Further, when the substrate is irradiated with light having energy slightly higher than that of the band gap of the grown crystal in the photo-excitation MOCVD method in order to eliminate the rough surface, it is possible to realize the p-type conductive of high carrier concentration.

摘要翻译： 在半导体发光器件中，可以消除在与衬底晶体的界面处相互扩散形成的高电阻层，并且可以实现低电阻p型接触。 此外，当形成内部阻流结构时，可以减小泄漏电流。 实际上，化学计量组成比偏移的化合物半导体层用作接触层。 此外，当向接触层添加预定元素时，与将杂质添加到普通的GaN基层相比，可以实现大量的掺杂。 因此，可以在降低接触电阻的同时实现高浓度导电型层。 另外，当偏离化学计量组成的化合物半导体层用作电流阻挡层时，可以提高电流阻挡效率。 此外，为了消除粗糙表面，为了消除粗糙表面，当在光激发MOCVD方法中照射具有比生长晶体的带隙稍高的光的基板时，可以实现高的p型导电 载体浓度。

公开(公告)号：US06258617B1

公开(公告)日：2001-07-10

申请号：US08817159

申请日：1997-04-15

申请人： Koichi Nitta ,  Hidetoshi Fujimoto ,  Masayuki Ishikawa

发明人： Koichi Nitta ,  Hidetoshi Fujimoto ,  Masayuki Ishikawa

IPC分类号： H01L2120

CPC分类号： H01L33/32 ,  H01L33/007 ,  Y10S438/93

摘要： A gallium-nitride-based blue light emitting element that is manufacturable through a small number of processes and a method of manufacturing the same are disclosed. A first gallium-nitride-based semiconductor layer containing impurities of a first conductivity type, a gallium-nitridebased semiconductor active layer that is substantially intrinsic, and a second gallium-nitride-based semiconductor layer containing impurities of a second conductivity type that is opposite to the first conductivity type are formed according to a thermal CVD method and are left in an inert gas to cool by themselves.

摘要翻译： 公开了一种可通过少量工艺制造的氮化镓基蓝色发光元件及其制造方法。 包含第一导电类型的杂质的第一氮化镓基半导体层，基本上是本征的氮化镓基半导体有源层，以及含有与第二导电类型相反的第二导电类型杂质的第二氮化镓基半导体层 第一导电类型根据热CVD方法形成，并置于惰性气体中以自身冷却。

公开(公告)号：US06359919B1

公开(公告)日：2002-03-19

申请号：US09642646

申请日：2000-08-22

申请人： Masayuki Ishikawa ,  Masahiro Yamamoto ,  Shinya Nunoue ,  Johji Nishio ,  Genichi Hatakoshi ,  Hidetoshi Fujimoto

发明人： Masayuki Ishikawa ,  Masahiro Yamamoto ,  Shinya Nunoue ,  Johji Nishio ,  Genichi Hatakoshi ,  Hidetoshi Fujimoto

IPC分类号： H01S5323

CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/2063 ,  H01S5/2202 ,  H01S5/2205 ,  H01S5/2216 ,  H01S5/222 ,  H01S5/2224 ,  H01S5/2227 ,  H01S5/2231 ,  H01S5/2232 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04

摘要： A gallium nitride-based compound semiconductor laser has a double-heterojunction structure, in which an active layer is sandwiched between cladding layers, on a sapphire substrate. A GaN current blocking layer having a striped opening portion is formed on the p-cladding layer. A p-GaN buried layer and a contact layer through which a current is injected into the opening portion of the current blocking layer and which are larger in area than the opening portion are formed. The active layer has a multiple quantum well structure constituted by a cyclic structure formed by cyclically stacking two types of InGaAlN layers which have different band gaps and are 10 nm or less thick.

摘要翻译： 氮化镓系化合物半导体激光器在蓝宝石衬底上具有双层异质结结构，其中有源层夹在包层之间。 在p-包层上形成具有条纹开口部分的GaN电流阻挡层。 形成p-GaN掩埋层和电流注入到电流阻挡层的开口部分并且面积大于开口部分的接触层。 有源层具有通过循环堆叠具有不同带隙并且为10nm或更小厚度的两种类型的InGaAlN层而形成的循环结构的多量子阱结构。

公开(公告)号：US5987048A

公开(公告)日：1999-11-16

申请号：US900121

申请日：1997-07-25

申请人： Masayuki Ishikawa ,  Masahiro Yamamoto ,  Shinya Nunoue ,  Johji Nishio ,  Genichi Hatakoshi ,  Hidetoshi Fujimoto

发明人： Masayuki Ishikawa ,  Masahiro Yamamoto ,  Shinya Nunoue ,  Johji Nishio ,  Genichi Hatakoshi ,  Hidetoshi Fujimoto

IPC分类号： H01S5/02 ,  H01S5/042 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2202 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04 ,  H01S5/0213 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/2063 ,  H01S5/2205 ,  H01S5/2216 ,  H01S5/222 ,  H01S5/2224 ,  H01S5/2227 ,  H01S5/2232 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/3213

摘要： A gallium nitride-based compound semiconductor laser has a double-heterojunction structure, in which an active layer is sandwiched between cladding layers, on a sapphire substrate. A GaN current blocking layer having a striped opening portion is formed on the p-cladding layer. A p-GaN buried layer and a contact layer through which a current is injected into the opening portion of the current blocking layer and which are larger in area than the opening portion are formed. The active layer has a multiple quantum well structure constituted by a cyclic structure formed by cyclically stacking two types of InGaAlN layers which have different band gaps and are 10 nm or more thick.

公开(公告)号：US5966396A

公开(公告)日：1999-10-12

申请号：US900127

申请日：1997-07-25

申请人： Haruhiko Okazaki ,  Hidetoshi Fujimoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Masahiro Yamamoto

发明人： Haruhiko Okazaki ,  Hidetoshi Fujimoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Masahiro Yamamoto

IPC分类号： H01S5/042 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/32325 ,  H01S5/0422 ,  H01S5/2275 ,  H01S5/32341

摘要： A semiconductor laser is formed from a gallium nitride-based compound semiconductor material, and has a double-heterostructure portion obtained by sandwiching an active layer between an n-type cladding layer and a p-type cladding layer on a sapphire substrate. The double-heterostructure portion is formed into a mesa shape on the sapphire substrate via a GaN buffer layer. The two sides of this mesa structure are buried with GaN current blocking layers.

摘要翻译： 半导体激光器由氮化镓系化合物半导体材料形成，并且具有通过在蓝宝石衬底上的n型覆层和p型覆层之间夹持有源层而获得的双异质结构部。 双异质结构部分经由GaN缓冲层在蓝宝石衬底上形成台面形状。 这种台面结构的两面被GaN电流阻挡层掩埋。