公开(公告)号：US06768755B2

公开(公告)日：2004-07-27

申请号：US09746065

申请日：2000-12-26

申请人： Daijiro Inoue ,  Ryoji Hiroyama ,  Kunio Takeuchi ,  Yasuhiko Nomura ,  Masayuki Hata

发明人： Daijiro Inoue ,  Ryoji Hiroyama ,  Kunio Takeuchi ,  Yasuhiko Nomura ,  Masayuki Hata

IPC分类号： H01S500

CPC分类号： H01S5/2231 ,  H01S5/06226 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2226 ,  H01S5/2227

摘要： A depletion enhancement layer having a striped opening on the upper surface of a ridge portion, a low carrier concentration layer and an n-type current blocking layer are successively formed on a p-type cladding layer having the ridge portion. The low carrier concentration layer has a lower carrier concentration than the n-type current blocking layer. The band gap of the depletion enhancement layer is set to an intermediate level between the band gaps of the p-type cladding layer and the low carrier concentration layer. Alternatively, a first current blocking layer having a low carrier concentration and a second current blocking layer of the opposite conduction type are formed on an n-type depletion enhancement layer, and a p-type contact layer is formed on the second current blocking layer of the opposite conduction type and another p-type contact layer.

摘要翻译： 在具有脊部的p型包覆层上依次形成具有在脊部上表面上的条纹开口的耗尽增强层，低载流子浓度层和n型电流阻挡层。 低载流子浓度层的载流子浓度比n型电流阻挡层低。 耗尽增强层的带隙被设定为p型覆层和低载流子浓度层的带隙之间的中间电平。 或者，在n型耗尽增强层上形成具有低载流子浓度的第一电流阻挡层和相反导电型的第二电流阻挡层，并且在第二电流阻挡层上形成p型接触层 相反的导电类型和另一个p型接触层。

公开(公告)号：US5559818A

公开(公告)日：1996-09-24

申请号：US312696

申请日：1994-09-27

申请人： Masayuki Shono ,  Ryoji Hiroyama ,  Keiichi Yodoshi

发明人： Masayuki Shono ,  Ryoji Hiroyama ,  Keiichi Yodoshi

IPC分类号： H01S5/34 ,  H01S5/343 ,  H01S3/18 ,  H01L33/00

CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/34326

摘要： The present invention is directed to a semiconductor laser device in which an active layer is constituted by a quantum well layer having a structure in which well layers and barrier layers which are formed on a GaAs substrate are alternately layered, cladding layers are provided so as to interpose the active layer, the value of a strain on each of the well layers is -0.8% to -1.5%, the thickness of a well layer is from 80 .ANG. to 180 .ANG., the value of strain on each of the barrier layers is +0.5% to +1.0%, the thickness of the barrier layer is 20 .ANG. to 60 .ANG., and the respective numbers of layered well layers and barrier layers are 2 to 4.

摘要翻译： 本发明涉及一种半导体激光器件，其中有源层由具有结构的量子阱层构成，其中形成在GaAs衬底上的阱层和阻挡层交替层叠，提供包层，以便 插入有源层，阱层的应变值为-0.8％〜-1.5％，阱层的厚度为80〜180，势垒层的应变值为 + 0.5％〜+ 1.0％时，阻挡层的厚度为20〜60，分层阱层和阻挡层的数量为2〜4。

公开(公告)号：US07796669B2

公开(公告)日：2010-09-14

申请号：US11525088

申请日：2006-09-22

申请人： Ryoji Hiroyama ,  Teruaki Miyake ,  Yuzuru Miyata

发明人： Ryoji Hiroyama ,  Teruaki Miyake ,  Yuzuru Miyata

IPC分类号： H01S5/00

CPC分类号： H01S5/162 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/4087

摘要： A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.

摘要翻译： 可以获得能够进一步提高温度特性的半导体激光二极管，同时充分防止激光束发射端面部分通过窗口结构的热破坏。 该半导体激光二极管包括在激光束发射端面部分具有窗口结构的有源层和形成在有源层的表面上的包含Mg和Zn作为杂质的p型层。 包含在p型层中的Zn的杂质浓度大于p型层中所含的Mg的杂质浓度。

公开(公告)号：US06778575B2

公开(公告)日：2004-08-17

申请号：US10100920

申请日：2002-03-20

申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuhiko Nomura ,  Kunio Takeuchi

发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuhiko Nomura ,  Kunio Takeuchi

IPC分类号： G01R2302

CPC分类号： B82Y20/00 ,  H01S5/0218 ,  H01S5/162 ,  H01S5/34326 ,  H01S2301/18

摘要： A semiconductor laser device having a real refractive index guided structure capable of obtaining a high kink light output and a high maximum light output also when a vertical beam divergence angle is at a small level of at least 12.5° and not more than 20.0° is provided. This semiconductor laser device comprises an n-type cladding layer of AlGaInP formed on an n-type GaAs substrate, an active layer having an AlGaInP layer formed on the n-type cladding layer, a p-type cladding layer of AlGaInP formed on the active layer and a light confinement layer formed to partially cover the p-type cladding layer, and a vertical beam divergence angle is at least 12.5° and not more than 20.0°. Thus, a higher kink light output and a higher maximum light output can be obtained as compared with a conventional semiconductor laser device having a vertical beam divergence angle exceeding 20.0°.

摘要翻译： 提供具有实际折射率引导结构的半导体激光器件，当垂直光束发散角处于至少12.5°且不大于20.0°的较小水平时，也可以获得高扭结光输出和高最大光输出 。 该半导体激光器件包括在n型GaAs衬底上形成的AlGaInP的n型包覆层，在n型覆层上形成有AlGaInP层的有源层，形成在活性层上的AlGaInP的p型包覆层 层和形成为部分地覆盖p型包层的光限制层，垂直光束发散角为至少12.5°且不大于20.0°。 因此，与具有超过20.0°的垂直光束发散角的常规半导体激光器件相比，可以获得更高的扭结光输出和更高的最大光输出。

公开(公告)号：US6044099A

公开(公告)日：2000-03-28

申请号：US924826

申请日：1997-09-05

申请人： Masayuki Shono ,  Ryoji Hiroyama ,  Kouji Komeda ,  Toyozo Nishida ,  Yasuyuki Bessho

发明人： Masayuki Shono ,  Ryoji Hiroyama ,  Kouji Komeda ,  Toyozo Nishida ,  Yasuyuki Bessho

IPC分类号： H01S3/22 ,  H01S5/16 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S3/085

CPC分类号： H01S5/16 ,  B82Y20/00 ,  H01S3/22 ,  H01S5/168 ,  H01S5/34 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/34326

摘要： A semiconductor laser device comprises an n-type cladding layer, an active layer formed on the n-type cladding layer and having a quantum well structure including one or a plurality of quantum well layers, a p-type cladding layer comprising a flat portion formed on the active layer and a stripe-shaped ridge portion on the flat portion, and a current blocking layer formed on the flat portion so as to cover the side surface of the ridge portion and formed on a region on the upper surface of the ridge portion from one of facets of a cavity to a position at a predetermined distance therefrom.

摘要翻译： 一种半导体激光器件包括n型包覆层，形成在n型包层上的有源层，并具有包括一个或多个量子阱层的量子阱结构，p型包层形成为平坦部分 在平坦部分上的有源层和条形脊部分上形成的电流阻挡层，以及形成在平坦部分上的电流阻挡层，以覆盖脊部的侧表面并形成在脊部的上表面上的区域上 从空腔的一个面到距预定距离的位置。

公开(公告)号：US20070069221A1

公开(公告)日：2007-03-29

申请号：US11525088

申请日：2006-09-22

申请人： Ryoji Hiroyama ,  Teruaki Miyake ,  Yuzuru Miyata

发明人： Ryoji Hiroyama ,  Teruaki Miyake ,  Yuzuru Miyata

IPC分类号： H01L33/00

CPC分类号： H01S5/162 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/4087

摘要： A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.

摘要翻译： 可以获得能够进一步提高温度特性的半导体激光二极管，同时充分防止激光束发射端面部分通过窗口结构的热破坏。 该半导体激光二极管包括在激光束发射端面部分具有窗口结构的有源层和形成在有源层的表面上的包含Mg和Zn作为杂质的p型层。 包含在p型层中的Zn的杂质浓度大于p型层中所含的Mg的杂质浓度。

公开(公告)号：US5586136A

公开(公告)日：1996-12-17

申请号：US270056

申请日：1994-07-01

申请人： Shoji Honda ,  Masayuki Shono ,  Yasuyuki Bessho ,  Ryoji Hiroyama ,  Hiroyuki Kase ,  Takatoshi Ikegami

发明人： Shoji Honda ,  Masayuki Shono ,  Yasuyuki Bessho ,  Ryoji Hiroyama ,  Hiroyuki Kase ,  Takatoshi Ikegami

IPC分类号： H01S5/00 ,  H01S5/10 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34326 ,  H01S5/1039 ,  H01S5/2013 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3403

摘要： A semiconductor laser device according to the present invention comprises a GaAs substrate of a first conductivity type, a cladding layer of the first conductivity type formed on one main surface of the substrate, an active layer having a quantum well structure in which a tensile strain quantum well layer and a quantum barrier layer which are formed on the cladding layer of the first conductivity type are alternately laminated, and a cladding layer of a second conductivity type formed on the active layer. The one main surface of the substrate is a surface misoriented by 9.degree. to 17.degree. from a {100} plane of the substrate in a direction, and the cavity length is not less than 150 .mu.m nor more than 300 .mu.m.

摘要翻译： 根据本发明的半导体激光器件包括第一导电类型的GaAs衬底，形成在衬底的一个主表面上的第一导电类型的覆层，具有量子阱结构的有源层，其中拉伸应变量 形成在第一导电类型的包覆层上的阱层和量子势垒层交替层叠，并且在有源层上形成第二导电类型的包覆层。 基板的一个主表面是在<011>方向上从基板的{100}面偏离9°至17°的表面，并且空腔长度不小于150μm不大于300μm 。

公开(公告)号：US06654397B2

公开(公告)日：2003-11-25

申请号：US09941663

申请日：2001-08-30

申请人： Kunio Takeuchi ,  Ryoji Hiroyama ,  Shigeyuki Okamoto ,  Koji Tominaga ,  Yasuhiko Nomura ,  Daijiro Inoue

发明人： Kunio Takeuchi ,  Ryoji Hiroyama ,  Shigeyuki Okamoto ,  Koji Tominaga ,  Yasuhiko Nomura ,  Daijiro Inoue

IPC分类号： H01S500

CPC分类号： H01S5/16 ,  H01S5/0425 ,  H01S5/168

摘要： An n-GaAs current blocking layer is formed on a p-AlGaInP first cladding layer, on sides of a ridge portion and in a region on the upper surface of the ridge portion above a window region. Raised portions are formed in a p-GaAs cap layer in regions in the vicinity of facets, while raised regions are formed in the regions of a first electrode in the vicinity of the facets. A second electrode having a thickness larger than the height of the raised regions is formed on the region between the raised regions of the first electrode.

公开(公告)号：US06967985B2

公开(公告)日：2005-11-22

申请号：US10361618

申请日：2003-02-11

申请人： Koji Tominaga ,  Kazushi Mori ,  Atsushi Tajiri ,  Yasuhiko Nomura ,  Ryoji Hiroyama

发明人： Koji Tominaga ,  Kazushi Mori ,  Atsushi Tajiri ,  Yasuhiko Nomura ,  Ryoji Hiroyama

IPC分类号： H01S5/183 ,  H01S3/08

CPC分类号： H01S5/18355 ,  H01S5/18311 ,  H01S5/18319 ,  H01S5/18327 ,  H01S5/18338 ,  H01S5/18347 ,  H01S5/1835 ,  H01S2301/14

摘要： A surface emission semiconductor laser device capable of substantially completely controlling the plane of polarization is obtained. This surface emission semiconductor laser device comprises a first multi-layer reflector, an emission layer formed on the first multi-layer reflector and a second multi-layer reflector formed on the emission layer, and at least either the first multi-layer reflector or the second multi-layer reflector includes a striped part worked in a striped manner in a prescribed period.

摘要翻译： 获得能够基本上完全控制偏振面的表面发射半导体激光器件。 该表面发射半导体激光器件包括第一多层反射器，形成在第一多层反射器上的发射层和形成在发射层上的第二多层反射器，以及至少第一多层反射器或 第二多层反射器包括在规定时间内以条纹方式工作的条纹部分。

公开(公告)号：US06771676B2

公开(公告)日：2004-08-03

申请号：US10234250

申请日：2002-09-05

申请人： Kunio Takeuchi ,  Shigeyuki Okamoto ,  Ryoji Hiroyama ,  Yasuhiko Nomura ,  Daijiro Inoue

发明人： Kunio Takeuchi ,  Shigeyuki Okamoto ,  Ryoji Hiroyama ,  Yasuhiko Nomura ,  Daijiro Inoue

IPC分类号： H01S304

CPC分类号： B82Y20/00 ,  H01S5/0021 ,  H01S5/0213 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/2231 ,  H01S5/34333

摘要： A semiconductor laser device capable of improving reliability is obtained in a structure formed by mounting a semiconductor laser element on a submount (base) in a junction-down system. This semiconductor laser device comprises a first electrode layer formed on the surface of a semiconductor element including an emission layer to have a shape comprising recess portions and projection portions, a base mounted with the semiconductor element, and a plurality of low melting point metal layers provided between the first electrode layer formed on the surface of the semiconductor element and the base for bonding the first electrode layer formed on the surface of the semiconductor element and the base to each other. Thus, the plurality of low melting point metal layers easily embed clearances resulting from the shape comprising recess portions and projection portions of the surface of the semiconductor element dissimilarly to a case of employing a single low melting point metal layer.

摘要翻译： 通过将半导体激光元件安装在下降系统中的底座（基座）上形成的结构，可以获得能够提高可靠性的半导体激光器件。 该半导体激光器件包括形成在包括发光层的半导体元件的表面上的第一电极层，该发光层具有包括凹部和突出部的形状，安装有半导体元件的基底和设置有多个低熔点金属层 在形成在半导体元件的表面上的第一电极层和用于将形成在半导体元件的表面上的第一电极层与基底接合的基底之间。 因此，多个低熔点金属层与使用单个低熔点金属层的情况相比，容易地嵌入由包含凹部的形状和半导体元件的表面的突出部分形成的间隙。