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    PHOTOVOLTAIC DEVICES
    41.
    发明申请
    PHOTOVOLTAIC DEVICES 审中-公开
    光伏器件

    公开(公告)号：US20120080067A1

    公开(公告)日：2012-04-05

    申请号：US12894926

    申请日：2010-09-30

    申请人： Loucas Tsakalakos ,  Alok Mani Srivastava ,  Bastiaan Arie Korevaar ,  Omar Ivan Stern Gonzalez ,  Yangang Andrew Xi

    发明人： Loucas Tsakalakos ,  Alok Mani Srivastava ,  Bastiaan Arie Korevaar ,  Omar Ivan Stern Gonzalez ,  Yangang Andrew Xi

    IPC分类号： H01L31/0232 ,  H01L31/042 ,  H01L31/06

    CPC分类号： H01L31/055 ,  C09K11/02 ,  C09K11/025 ,  C09K11/7761 ,  C09K11/7764 ,  Y02E10/52 ,  Y02E10/542

    摘要： A photovoltaic device including a composite down-converting layer disposed on the device, is presented. The composite down-converting layer includes down-converting material particles dispersed in a matrix. The size of the down-converting material particles is a function of a difference in respective refractive indices (Δn) of the down-converting material and the matrix such that: (i) for Δn less than about 0.05, the size of down-converting material particles is in a range from about 0.5 micron to about 10 microns, and (ii) for Δn at least about 0.05, the size of down-converting material particles is in a range from about 1 nanometer to about 500. A photovoltaic module having a plurality of such photovoltaic devices is also presented.

    摘要翻译： 提出了一种包括设置在该设备上的复合下变换层的光伏器件。 复合下变换层包括分散在基质中的下转换材料颗粒。 下转换材料颗粒的尺寸是下转换材料和基体的折射率（＆Dgr; n）的差异的函数，使得：（i）对于＆Dgr; n小于约0.05，尺寸 的下转换材料颗粒在约0.5微米至约10微米的范围内，和（ii）对于＆Dgr; n至少约0.05，下转换材料颗粒的尺寸在约1纳米至约 还提出了具有多个这种光伏器件的光伏模块。

    MONOLITHICALLY INTEGRATED SOLAR MODULES AND METHODS OF MANUFACTURE
    42.
    发明申请
    MONOLITHICALLY INTEGRATED SOLAR MODULES AND METHODS OF MANUFACTURE 审中-公开
    单片集成太阳能模块及其制造方法

    公开(公告)号：US20110290308A1

    公开(公告)日：2011-12-01

    申请号：US12790689

    申请日：2010-05-28

    申请人： Bastiaan Arie Korevaar

    发明人： Bastiaan Arie Korevaar

    IPC分类号： H01L31/0224 ,  H01L31/18

    CPC分类号： H01L31/0296 ,  H01L31/0368 ,  H01L31/0463 ,  H01L31/075 ,  Y02E10/548

    摘要： A monolithically integrated photovoltaic (PV) module is provided and includes a first electrically conductive layer and an insulating layer. The first electrically conductive layer is disposed below the insulating layer. The PV module further includes a back contact metal layer, a p-type semiconductor layer, a substantially intrinsic semiconductor layer with a median grain size of at least about five μm and comprising cadmium and tellurium, and an n-type semiconductor layer. The substantially intrinsic layer is disposed between the p-type and the n-type semiconductor layers forming an active semiconductor stack. The back contact metal layer is disposed between the insulating layer and the active semiconductor stack. The PV module further includes a second electrically conductive layer disposed above the active semiconductor stack, at least one first trench extending through the back contact metal layer, at least one second trench extending through the active semiconductor stack, and at least one third trench extending through the second electrically conductive layer.

    摘要翻译： 提供了单片集成光伏（PV）模块并且包括第一导电层和绝缘层。 第一导电层设置在绝缘层的下方。 PV模块还包括背接触金属层，p型半导体层，具有至少约5μm的中值晶粒尺寸并包含镉和碲的基本上本征的半导体层和n型半导体层。 基本上本征层设置在形成有源半导体堆叠的p型和n型半导体层之间。 背接触金属层设置在绝缘层和有源半导体叠层之间。 PV模块还包括设置在有源半导体堆叠上方的第二导电层，延伸穿过背接触金属层的至少一个第一沟槽，延伸穿过有源半导体堆叠的至少一个第二沟槽和延伸穿过 第二导电层。

    Method And Apparatus For A Semiconductor Structure
    46.
    发明申请
    Method And Apparatus For A Semiconductor Structure 审中-公开
    半导体结构的方法和装置

    公开(公告)号：US20080173347A1

    公开(公告)日：2008-07-24

    申请号：US11625841

    申请日：2007-01-23

    申请人： Bastiaan Arie Korevaar ,  James Neil Johnson

    发明人： Bastiaan Arie Korevaar ,  James Neil Johnson

    IPC分类号： H01L31/036 ,  H01L31/18

    CPC分类号： H01L31/1816 ,  H01L31/0236 ,  H01L31/036 ,  H01L31/03687 ,  H01L31/065 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/1868 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521

    摘要： One exemplary embodiment is a semiconductor structure, that can include a semiconductor substrate of one conductivity type, having a front surface and a back surface, a first semiconductor layer disposed on the front surface of the semiconductor substrate, a second semiconductor layer disposed on a portion of the back surface of the semiconductor substrate, and a third semiconductor layer disposed on another portion of the back surface of the semiconductor substrate. Each of the second and third semiconductor layers may be compositionally graded through its depth, from substantially intrinsic at an interface with the substrate, to substantially conductive at an opposite side, and have a selected conductivity type obtained by the incorporation of one or more selected dopants.

    摘要翻译： 一个示例性实施例是半导体结构，其可以包括具有前表面和后表面的一种导电类型的半导体衬底，设置在半导体衬底的前表面上的第一半导体层，设置在半导体衬底的一部分上的第二半导体层 的半导体衬底的背表面的第三半导体层，以及设置在半导体衬底的背面的另一部分上的第三半导体层。 第二半导体层和第三半导体层中的每一个可以通过其深度从基本上本征的与衬底的界面逐渐分级到相对侧的基本导电，并且具有通过掺入一种或多种所选掺杂剂而获得的选择的导电类型 。

    Nanowires in thin-film silicon solar cells
    47.
    发明申请
    Nanowires in thin-film silicon solar cells 有权
    纳米线在薄膜硅太阳能电池中的应用

    公开(公告)号：US20080047604A1

    公开(公告)日：2008-02-28

    申请号：US11509886

    申请日：2006-08-25

    申请人： Bastiaan Arie Korevaar ,  Loucas Tsakalakos

    发明人： Bastiaan Arie Korevaar ,  Loucas Tsakalakos

    IPC分类号： H01L31/00

    CPC分类号： H01L31/035254 ,  B82Y20/00 ,  H01L31/035245 ,  H01L31/03529 ,  H01L31/075 ,  Y02E10/548 ,  Y10S977/712 ,  Y10S977/72 ,  Y10S977/762 ,  Y10S977/948 ,  Y10S977/954

    摘要： In some embodiments, the present invention is directed to photovoltaic (PV) devices comprising silicon (Si) nanowires as active PV elements, wherein such devices are typically thin film Si solar cells. Generally, such solar cells are of the p-i-n type and can be fabricated for front and/or backside (i.e., top and/or bottom) illumination. Additionally, the present invention is also directed at methods of making and using such devices, and to systems and modules (e.g., solar panels) employing such devices.

    摘要翻译： 在一些实施例中，本发明涉及包含硅（Si）纳米线作为有源PV元件的光伏（PV）器件，其中这种器件通常是薄膜Si太阳能电池。 通常，这种太阳能电池是p-i-n型，并且可以制造用于正面和/或背面（即，顶部和/或底部）照明。 此外，本发明还涉及制造和使用这种装置以及采用这种装置的系统和模块（例如，太阳能电池板）的方法。

    Photovoltaic devices and method of making
    48.
    发明授权
    Photovoltaic devices and method of making 有权
    光伏器件及其制造方法

    公开(公告)号：US08816190B2

    公开(公告)日：2014-08-26

    申请号：US13088496

    申请日：2011-04-18

    申请人： Bastiaan Arie Korevaar ,  Renee Mary Whitney ,  Faisal Razi Ahmad

    发明人： Bastiaan Arie Korevaar ,  Renee Mary Whitney ,  Faisal Razi Ahmad

    IPC分类号： H01L31/073 ,  H01L31/0352

    CPC分类号： H01L31/02363 ,  H01L31/022425 ,  H01L31/0296 ,  H01L31/03529 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

    摘要： In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a transparent layer; a first porous layer disposed on the transparent layer, wherein the first porous layer comprises a plurality of pores extending through a thickness of the first porous layer; a first semiconductor material disposed in the plurality of pores to form a patterned first semiconductor layer; and a second semiconductor layer disposed on the first porous layer and the patterned first semiconductor layer, wherein the patterned first semiconductor layer is substantially transparent. Method of making a photovoltaic device is also provided.

    摘要翻译： 在本发明的一个方面，提供一种光电器件。 光伏器件包括透明层; 设置在所述透明层上的第一多孔层，其中所述第一多孔层包括延伸穿过所述第一多孔层的厚度的多个孔; 设置在所述多个孔中以形成图案化的第一半导体层的第一半导体材料; 以及设置在所述第一多孔层和所述图案化的第一半导体层上的第二半导体层，其中所述图案化的第一半导体层基本上是透明的。 还提供了制造光伏器件的方法。

    PHOTOVOLTAIC DEVICES
    50.
    发明申请
    PHOTOVOLTAIC DEVICES 审中-公开
    光伏器件

    公开(公告)号：US20120080070A1

    公开(公告)日：2012-04-05

    申请号：US12894901

    申请日：2010-09-30

    申请人： Loucas Tsakalakos ,  Alok Mani Srivastava ,  Bastiaan Arie Korevaar ,  Omar Ivan Stern Gonzalez ,  Yangang Andrew Xi

    发明人： Loucas Tsakalakos ,  Alok Mani Srivastava ,  Bastiaan Arie Korevaar ,  Omar Ivan Stern Gonzalez ,  Yangang Andrew Xi

    IPC分类号： H01L31/0232 ,  H01L31/042

    CPC分类号： H01L31/055 ,  Y02E10/52

    摘要： In one aspect of the present invention, a photovoltaic device having a down-converting layer is presented. The device includes a glass plate having a first surface and a second surface. The first surface is exposed to ambient radiation. A transparent conductive layer is disposed adjacent to the second surface of the glass plate. The device further includes a first type semiconductor layer disposed adjacent to the transparent conductive layer and a second type semiconductor layer disposed adjacent to the first type semiconductor layer. The down-converting layer is interposed between the second surface of the glass plate and the transparent conducting layer. The down-converting layer exhibits an effective refractive index that has a value between the respective refractive indices of the glass plate and the transparent conductive layer. A photovoltaic module having a plurality of such photovoltaic devices is also presented.

    摘要翻译： 在本发明的一个方面，提供了具有下变换层的光伏器件。 该装置包括具有第一表面和第二表面的玻璃板。 第一个表面暴露于环境辐射。 透明导电层设置成与玻璃板的第二表面相邻。 该器件还包括邻近透明导电层设置的第一类型半导体层和邻近第一类型半导体层设置的第二类型半导体层。 下变换层介于玻璃板的第二表面和透明导电层之间。 下变换层表现出具有玻璃板和透明导电层的折射率之间的值的有效折射率。 还提出了具有多个这种光伏器件的光伏模块。