公开(公告)号：US08183122B2

公开(公告)日：2012-05-22

申请号：US12838206

申请日：2010-07-16

申请人： Hiroyuki Ogawa ,  Noritaka Akita ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Masakiyo Matsumura

发明人： Hiroyuki Ogawa ,  Noritaka Akita ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Masakiyo Matsumura

IPC分类号： H01L21/76

CPC分类号： H01L21/02678 ,  H01L21/2026 ,  H01L21/268 ,  H01L23/544 ,  H01L27/1214 ,  H01L27/1285 ,  H01L27/1288 ,  H01L29/78675 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region.

摘要翻译： 促进在非晶或多晶膜中形成的再结晶区域的精确取向。 形成对准标记，其可用于在再结晶区域中形成诸如薄膜晶体管的电子器件的步骤。 此外，在从半导体膜获得大晶粒尺寸的晶相半导体的步骤中，在相同的曝光步骤中，在半导体膜上形成可用作后续步骤中的对准标记的标记结构。 因此，本发明包括调制光并形成用于结晶的光强度分布的光强调制结构，以及调制光并形成包括具有预定形状的图案的光强度分布的标记形成结构，并且还形成标记 在结晶区域上的预定位置。

公开(公告)号：US20100304546A1

公开(公告)日：2010-12-02

申请号：US12838206

申请日：2010-07-16

申请人： Hiroyuki Ogawa ,  Noritaka Akita ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Masakiyo Matsumura

发明人： Hiroyuki Ogawa ,  Noritaka Akita ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Masakiyo Matsumura

IPC分类号： H01L21/02

CPC分类号： H01L21/02678 ,  H01L21/2026 ,  H01L21/268 ,  H01L23/544 ,  H01L27/1214 ,  H01L27/1285 ,  H01L27/1288 ,  H01L29/78675 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region.

摘要翻译： 促进在非晶或多晶膜中形成的再结晶区域的精确取向。 形成对准标记，其可用于在再结晶区域中形成诸如薄膜晶体管的电子器件的步骤。 此外，在从半导体膜获得大晶粒尺寸的晶相半导体的步骤中，在相同的曝光步骤中，在半导体膜上形成可用作后续步骤中的对准标记的标记结构。 因此，本发明包括调制光并形成用于结晶的光强度分布的光强调制结构，以及调制光并形成包括具有预定形状的图案的光强度分布的标记形成结构，并且还形成标记 在结晶区域上的预定位置。

公开(公告)号：US07776151B2

公开(公告)日：2010-08-17

申请号：US11866577

申请日：2007-10-03

申请人： Yukio Taniguchi ,  Masakiyo Matsumura

发明人： Yukio Taniguchi ,  Masakiyo Matsumura

IPC分类号： C30B1/02

CPC分类号： H01L21/02675 ,  B23K26/0613 ,  B23K26/073 ,  G02B27/0927 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/66757

摘要： A crystallization method which generates a crystallized semiconductor film by irradiating at least one of a polycrystal semiconductor film and an amorphous semiconductor film with light beams having a light intensity distribution with an inverse peak pattern that a light intensity is increased toward the periphery from an inverse peak at which the light intensity is minimum, wherein a light intensity value α (standardized value) in the inverse peak when a maximum value of the light intensity in the light intensity distribution with the inverse peak pattern is standardized as 1 is set to 0.2≦value α≦0.8.

摘要翻译： 一种结晶化方法，其通过用具有光强度分布的光束照射多晶半导体膜和非晶半导体膜中的至少一种而产生结晶化半导体膜，所述光束具有从反向峰值向周边增加的光强度的逆峰值图案 光强度最小的光强度值，其中当具有反峰值图案的光强度分布中的光强度的最大值被标准化为1时，反向峰值中的光强度值α（标准化值）被设置为0.2＆lt; nlE; 值α＆nlE; 0.8。

公开(公告)号：US07692864B2

公开(公告)日：2010-04-06

申请号：US12403726

申请日：2009-03-13

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： G02B27/10

CPC分类号： G03B21/56 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012

摘要： A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.

摘要翻译： 结晶方法包括将入射光束波前分割成多个光束，将波前划分的光束聚集在相移掩模的相应相移部分中或在相移部分附近以形成光束 具有在与相移掩模的相移部分相对应的点中光强度最小的逆峰值图案的光强度分布，以及用具有光的光束照射多晶半导体膜或非晶半导体膜 强度分布以产生结晶的半导体膜。

公开(公告)号：US07608148B2

公开(公告)日：2009-10-27

申请号：US11520751

申请日：2006-09-14

申请人： Masakiyo Matsumura ,  Yukio Taniguchi

发明人： Masakiyo Matsumura ,  Yukio Taniguchi

IPC分类号： C30B1/02

CPC分类号： C30B1/02 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A crystallization apparatus includes an illumination system which illuminates a phase shifter having a phase shift portion, and irradiates a polycrystal semiconductor film or an amorphous semiconductor film with a light beam having a predetermined light intensity distribution in which a light intensity is minimum in a point area corresponding to the phase shift portion of the phase shifter, thereby forming a crystallized semiconductor film, the phase shifter has four or more even-numbered phase shift lines which intersect at a point constituting the phase shift portion. An area on one side and an area on the other side of each phase shift line have a phase difference of approximately 180 degrees.

摘要翻译： 结晶装置包括：照射具有相移部分的移相器的照明系统，并且在点区域中照射具有预定光强度分布的光束的多晶半导体膜或非晶半导体膜，其中光强度最小 对应于移相器的相移部分，从而形成结晶化的半导体膜，移相器具有在构成相移部分的点处相交的四个或更多个偶数相移线。 每个相移线的一侧的区域和另一侧的区域具有大约180度的相位差。

公开(公告)号：US07579122B2

公开(公告)日：2009-08-25

申请号：US11399288

申请日：2006-04-05

申请人： Yukio Taniguchi

发明人： Yukio Taniguchi

IPC分类号： G03F1/00

CPC分类号： G03F7/70283 ,  G03F1/28 ,  G03F1/32 ,  G03F7/70666

摘要： A method of exposing a surface to be exposed and an attenuated type phase shift mask for use in the method are provided herein. The attenuated type phase shift mask has a reference area allowing a light radiated from a light source to pass through and an amplitude and phase modulation area allowing a part of said light to pass through. The phase modulation amount of the amplitude and phase modulation area relative to the reference area of the attenuated type phase shift mask is {360°×n+(182° to 203°)} (n is an integer).

摘要翻译： 本文提供了一种暴露待暴露的表面的方法和用于该方法的衰减型相移掩模。 衰减型相移掩模具有允许从光源辐射的光通过的参考区域和允许所述光的一部分通过的幅度和相位调制区域。 振幅相位调制区域相对于衰减型移相掩模的基准面的相位调制量为{360°×n +（182°〜203°）}（n为整数）。

公开(公告)号：US07579119B2

公开(公告)日：2009-08-25

申请号：US11622859

申请日：2007-01-12

申请人： Kenji Ueda ,  Tsuyoshi Hotta ,  Yukio Taniguchi ,  Atsushi Sekiguchi ,  Hideyuki Iriyama

发明人： Kenji Ueda ,  Tsuyoshi Hotta ,  Yukio Taniguchi ,  Atsushi Sekiguchi ,  Hideyuki Iriyama

IPC分类号： G03H1/02

CPC分类号： G03H1/26 ,  G02B5/32 ,  G03H1/0236 ,  G03H1/18 ,  G03H1/24 ,  G03H2001/0439 ,  G03H2001/186 ,  G03H2001/2263 ,  G03H2001/2271 ,  G03H2001/263 ,  G03H2001/266 ,  G03H2001/303 ,  G03H2222/16 ,  G03H2223/18 ,  G03H2230/10 ,  G03H2250/34 ,  G03H2250/44 ,  G03H2260/12 ,  G03H2270/23

摘要： The hologram recording sheet according to the invention is made up of a base film and hologram sensitive materials sensitive to different wavelength regions formed therein in a desired pattern, or a film and at least two hologram recording sensitive materials sensitive to different wavelength regions laminated on the film with a transparent plastic spacer layer located therebetween, thereby enabling the required diffraction light wavelengths to be recorded on the required sites without producing unnecessary interference fringes. At least two hologram recording sensitive materials sensitive to different wavelength regions are formed on different sites on a film in dotted or striped configuration, the size of which is up to 200 mm or at least twice as large as the thickness of the sensitive material layers, thereby enabling regions diffracting light of different wavelengths to be formed in the form of independent sets of interference fringes.

公开(公告)号：US07572335B2

公开(公告)日：2009-08-11

申请号：US10958396

申请日：2004-10-06

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： C30B35/00

CPC分类号： H01L21/02678 ,  B23K26/066 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78675 ,  Y10S117/90 ,  Y10S117/904 ,  Y10S117/905 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A crystallization apparatus includes an illumination system which illuminates a phase-shift mask and an image-forming optical system arranged in an optical path between the phase-shift mask and a semiconductor film. The semiconductor film is irradiated with a light beam having a light intensity distribution of inverted peak patterns whose light intensity is the lowest in portions corresponding to phase shift sections to form a crystallized semiconductor film. The image-forming optical system is located to optically conjugate the phase-shift mask and the semiconductor film and has an aberration corresponding to the given wavelength range to form a light intensity distribution of inverted peak patterns with no swell of intensity in the middle portion.

摘要翻译： 结晶装置包括照射相移掩模的照明系统和布置在相移掩模和半导体膜之间的光路中的成像光学系统。 用对应于相移部分的部分的光强度最低的具有反相峰值图案的光强度分布的光束照射半导体膜，以形成结晶的半导体膜。 成像光学系统被定位为将相移掩模和半导体膜光学共轭，并且具有对应于给定波长范围的像差，以形成中间部分没有强度波动的反向峰值图案的光强度分布。

公开(公告)号：US20090134394A1

公开(公告)日：2009-05-28

申请号：US12277732

申请日：2008-11-25

申请人： Kazufumi AZUMA ,  Shigeyuki Shimoto ,  Masakiyo Matsumura ,  Takahiko Endo ,  Yukio Taniguchi ,  Tomoya Kato

发明人： Kazufumi AZUMA ,  Shigeyuki Shimoto ,  Masakiyo Matsumura ,  Takahiko Endo ,  Yukio Taniguchi ,  Tomoya Kato

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L27/1285 ,  H01L21/02381 ,  H01L21/02686 ,  H01L27/1296 ,  H01L29/04

摘要： A crystal silicon array includes a crystallized unit region obtained by crystallizing at least a part of a non-single crystal semiconductor film. The crystallized unit region includes at least one square two-dimensional crystal portion having a size of 7 μm square or more, and at least one needle crystal portion having a grain length of 3.5 μm or more.

摘要翻译： 晶体硅阵列包括通过使至少一部分非单晶半导体膜结晶而获得的结晶单元区域。 结晶单元区域包括至少一个尺寸为7μm以上的正方形二维晶体部分和至少一个晶粒长度为3.5μm或更大的针晶部分。

公开(公告)号：US20080289573A1

公开(公告)日：2008-11-27

申请号：US12166997

申请日：2008-07-02

申请人： Masayuki JYUMONJI ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

发明人： Masayuki JYUMONJI ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

IPC分类号： B05B5/00

CPC分类号： H01L21/02678 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  C30B13/24 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T117/1004 ,  Y10T117/1008

摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

摘要翻译： 提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求 ，结晶装置，薄膜​​晶体管和显示装置。 当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少， 熔融非单晶半导体的光强度。 此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。