公开(公告)号：US08894805B2

公开(公告)日：2014-11-25

申请号：US13595452

申请日：2012-08-27

申请人： Kallol Bera ,  Shahid Rauf ,  Leonid Dorf ,  Kenneth S. Collins ,  Ajit Balakrishna ,  Gary Leray

发明人： Kallol Bera ,  Shahid Rauf ,  Leonid Dorf ,  Kenneth S. Collins ,  Ajit Balakrishna ,  Gary Leray

IPC分类号： H05H1/46 ,  H01J37/32 ,  H05H7/00

CPC分类号： H01J37/3233 ,  H05H1/46 ,  H05H7/001

摘要： A plasma reactor employs an e-beam source to generate plasma, and the e-beam source has a configurable magnetic shield.

摘要翻译： 等离子体反应器采用电子束源产生等离子体，并且电子束源具有可配置的磁屏蔽。

公开(公告)号：US20130098883A1

公开(公告)日：2013-04-25

申请号：US13595452

申请日：2012-08-27

申请人： Kallol Bera ,  Shahid Rauf ,  Leonid Dorf ,  Kenneth S. Collins ,  Ajit Balakrishna ,  Gary Leray

发明人： Kallol Bera ,  Shahid Rauf ,  Leonid Dorf ,  Kenneth S. Collins ,  Ajit Balakrishna ,  Gary Leray

IPC分类号： B23K15/00

CPC分类号： H01J37/3233 ,  H05H1/46 ,  H05H7/001

摘要： A plasma reactor employs an e-beam source to generate plasma, and the e-beam source has a configurable magnetic shield.

摘要翻译： 等离子体反应器采用电子束源产生等离子体，并且电子束源具有可配置的磁屏蔽。

公开(公告)号：US08920597B2

公开(公告)日：2014-12-30

申请号：US13047052

申请日：2011-03-14

申请人： Kartik Ramaswamy ,  Igor Markovsky ,  Zhigang Chen ,  James D. Carducci ,  Kenneth S. Collins ,  Shahid Rauf ,  Nipun Misra ,  Leonid Dorf ,  Zheng John Ye

发明人： Kartik Ramaswamy ,  Igor Markovsky ,  Zhigang Chen ,  James D. Carducci ,  Kenneth S. Collins ,  Shahid Rauf ,  Nipun Misra ,  Leonid Dorf ,  Zheng John Ye

IPC分类号： H01L21/00 ,  C23C16/00 ,  H01J37/32

CPC分类号： H01J37/32091 ,  H01J37/32018 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32587 ,  H01J37/32596 ,  H01J37/3266 ,  H01J37/32715 ,  H01J37/32834

摘要： The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power distribution.

摘要翻译： 本公开涉及一种通过具有折叠结构和对称功率分布的阻抗匹配同轴谐振器施加VHF功率的Capactively coupled等离子体源。

公开(公告)号：US08313664B2

公开(公告)日：2012-11-20

申请号：US12623243

申请日：2009-11-20

申请人： Zhigang Chen ,  Shahid Rauf ,  Walter R. Merry ,  Leonid Dorf ,  Kartik Ramaswamy ,  Kenneth S. Collins

发明人： Zhigang Chen ,  Shahid Rauf ,  Walter R. Merry ,  Leonid Dorf ,  Kartik Ramaswamy ,  Kenneth S. Collins

IPC分类号： G01L21/30

CPC分类号： H01J37/32165 ,  H01J37/32082 ,  H01J37/3299 ,  H01L21/6833

摘要： In a plasma reactor having an electrostatic chuck, wafer voltage may be determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage may be used to accurately control the DC wafer clamping voltage.

摘要翻译： 在具有静电卡盘的等离子体反应器中，可以使用基于偏置输入的传输线特性的先前确定的常数，在偏置输入处的RF测量来确定晶片电压，并且该晶片电压可用于精确地控制DC晶片钳位电压 。

公开(公告)号：US20100248488A1

公开(公告)日：2010-09-30

申请号：US12711061

申请日：2010-02-23

申请人： Ankur Agarwal ,  Kenneth S. Collins ,  Shahid Rauf ,  Kartik Ramaswamy ,  Thorsten B. Lill

发明人： Ankur Agarwal ,  Kenneth S. Collins ,  Shahid Rauf ,  Kartik Ramaswamy ,  Thorsten B. Lill

IPC分类号： H01L21/3065

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32706

摘要： Radial distribution of etch rate is controlled by controlling the respective duty cycles of pulsed VHF source power applied to the ceiling and pulsed HF or MF bias power on the workpiece. Net average electrical charging of the workpiece is controlled by providing an electronegative process gas and controlling the voltage of a positive DC pulse on the workpiece applied during pulse off times of the pulsed VHF source power.

摘要翻译： 通过控制施加到天花板的脉冲VHF源功率和工件上的脉冲HF或MF偏置功率的相应占空比来控制蚀刻速率的径向分布。 通过提供电负性处理气体并控制在脉冲VHF源功率的脉冲关闭期间施加的工件上的正DC脉冲的电压来控制工件的净平均充电。

公开(公告)号：US20180308663A1

公开(公告)日：2018-10-25

申请号：US15960372

申请日：2018-04-23

申请人： Kenneth S. Collins ,  Kartik Ramaswamy ,  Yue Guo ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice

发明人： Kenneth S. Collins ,  Kartik Ramaswamy ,  Yue Guo ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice

IPC分类号： H01J37/32 ,  C23C16/455

CPC分类号： H01J37/32137 ,  C23C16/45536 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831

摘要： A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, an intra-chamber electrode assembly including a plurality of filaments extending laterally through the plasma chamber between a ceiling of the plasma chamber and the workpiece support, each filament including a conductor surrounded by a cylindrical insulating shell, and an RF power source configured to apply a first RF signal to at least some of the plurality of filaments, to apply a second RF signal of equal frequency to at least some of the plurality of filaments, and to modulate a phase offset between the first RF signal and the second RF signal.

公开(公告)号：US20130098882A1

公开(公告)日：2013-04-25

申请号：US13595292

申请日：2012-08-27

申请人： Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

发明人： Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

IPC分类号： B23K15/00

CPC分类号： H01J37/3233 ,  G21K5/00 ,  H05H1/46 ,  H05H7/001

摘要： A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented beam dump that is profiled to promote uniformity in the electron beam-produced plasma.

摘要翻译： 通过电子束在工件处理室中产生等离子体的等离子体反应器具有电子束源和分段的束流，其形状是为了促进电子束产生的等离子体中的均匀性。

公开(公告)号：US20130098873A1

公开(公告)日：2013-04-25

申请号：US13595655

申请日：2012-08-27

申请人： Kartik Ramaswamy ,  Kallol Bera ,  Kenneth S. Collins ,  Shahid Rauf

发明人： Kartik Ramaswamy ,  Kallol Bera ,  Kenneth S. Collins ,  Shahid Rauf

IPC分类号： H01L21/3065 ,  C23F1/08

CPC分类号： H01J37/32091 ,  H01J37/32541

摘要： A plasma reactor has a main chamber for processing a workpiece in a processing region bounded between an overhead ceiling and a workpiece support surface, the reactor having an overhead electron beam source that produces an electron beam flowing into the processing region through the ceiling of the main chamber.

摘要翻译： 等离子体反应器具有用于在位于顶棚顶板和工件支撑表面之间的加工区域内加工工件的主室，所述反应器具有塔顶电子束源，其产生通过主体的天花板流入处理区域的电子束 房间。

公开(公告)号：US20130098552A1

公开(公告)日：2013-04-25

申请号：US13595252

申请日：2012-08-27

申请人： Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

发明人： Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

IPC分类号： C23F1/08

CPC分类号： H01J37/3233 ,  H01J2237/06366

摘要： A plasma, reactor that relies on an electron beam as a plasma source employs a profiled electron beam extraction grid in an electron beam source to improve uniformity.

摘要翻译： 依靠电子束作为等离子体源的等离子体反应器采用电子束源中的形状电子束提取栅格来改善均匀性。

公开(公告)号：US20180308664A1

公开(公告)日：2018-10-25

申请号：US15960382

申请日：2018-04-23

申请人： Kenneth S. Collins ,  Kartik Ramaswamy ,  Yue Guo ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice

发明人： Kenneth S. Collins ,  Kartik Ramaswamy ,  Yue Guo ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice

IPC分类号： H01J37/32 ,  C23C16/455

CPC分类号： H01J37/32183 ,  C23C16/4554 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/1825 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831

摘要： A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, and an intra-chamber electrode assembly including a plurality of filaments extending laterally through the plasma chamber between a ceiling of the plasma chamber and the workpiece support. At least one bus is electrically connected to a conductor of each filament. An RF power source is configured to apply a first RF signal of a first frequency to the plurality of filaments at a first location on at least one bus, and to apply a second RF signal of different second frequency to the plurality of filaments at a different second location on the at least one bus.