摘要:
A semiconductor integrated circuit comprising: a pair of MOS transistors which are formed in a same well on a semiconductor substrate and arranged adjacent to each other with a distance such that charge exchange between capacitances of respective drain diffusion layers is possible; and a wiring structure which is formed to apply differential signals to respective gates of the pair of MOS transistors and to apply a common potential to respective sources of the pair of MOS transistors.
摘要:
To transmit a high-speed digital signal of several tens GHz via a differential line by connecting a differential line referring to the ground to differential lines not referring to the ground, there is provided a signal transmission system which transmits a digital signal between circuit blocks via a signal transmission line, each of the circuit blocks basically including a functional circuit, a reception/transmission circuit formed separately from the functional circuit and an impedance-matched transmission line (115) formed between reception and transmission ends of the reception/transmission circuit; a differential line (105) referring to the ground (110), led out from a differential output driver, being formed from differential signal lines disposed symmetrically with respect to the ground (110) in the circuit block, only differential pair lines (111, 112) not referring to the ground being extended directly from the differential signal lines disposed symmetrically with respect to the ground in the signal transmission line (115).
摘要:
A semiconductor integrated circuit comprising: a pair of MOS transistors which are formed in a same well on a semiconductor substrate and arranged adjacent to each other with a distance such that charge exchange between capacitances of respective drain diffusion layers is possible; and a wiring structure which is formed to apply differential signals to respective gates of the pair of MOS transistors and to apply a common potential to respective sources of the pair of MOS transistors.
摘要:
A signal transmission bus system has a transmission line pair on which binary data values are indicated by the presence and absence of a complementary signal. A driver circuit opens and closes a current path that supplies the complementary signal to the transmission line pair. When this path is opened, the driver circuit closes a bypass current path, so that the driver circuit behaves as a direct-current circuit and does not generate power-supply and ground noise. A receiver that senses the presence and absence of the complementary signal on the transmission line pair includes a differential amplifier and a termination transistor coupled across the input terminals of the differential amplifier, to discharge the input capacitance of the differential amplifier so that high-speed signals can be sensed rapidly.
摘要:
Disclosed is an LSI package cooling heat sink having a heat diffusion plate and thin wire fins joined to the heat diffusion plate. The heat sink is mounted on an LSI package and the LSI package is cooled by the flowing of fluid through the thin wire fins. The wire fins are made of a net formed of longitudinal thin wires intersecting with horizontal thin wires. The net is formed to continuous rectangular shapes or a swirl shape and joined to the heat diffusion plate. The net is constituted so that the number of the thin wires vertical to the heat diffusion plate is larger than the number of the thin wires parallel thereto and the net is joined to the heat diffusion plate by brazing, diffusion joint, pressure welding or the like. Since the heat sink is formed of the net composed of the longitudinal thin wires intersecting with the horizontal thin wires, the irregular portions of the adjacent thin wires are formed at a dislocated position and fluid striking against the thin wires produces many turbulent flows so that a high heat transfer performance can be obtained. Further, since the net formed of the thin wires is used, the size of cooling fins can be reduced and noise can be also lowered. Further, it is possible to produce an LSI package cooling heat sink in a short time which heat sink is excellent in mass-production.
摘要:
A technique for producing a chip mount type package or a TAB package with high reliability, without use of a flux which would cause environmental pollution or would hinder an enhancement of reliability, more particularly pertains to a method of irradiating bonding surfaces, for which a solder is used, and solder bump electrodes of a package with an atomic or ion energy beam, and bonding the bonding surfaces to each other under normal pressure (about 1 atm) in a continuous apparatus.
摘要:
An invention relating to a technique for producing a chip mount type package or a TAB package with high reliability, without use of a flux which would cause environmental pollution or would hinder an enhancement of reliability, and more particularly pertaining to a method of irradiating bonding surfaces, for which a solder is used, and solder bump electrodes of a package with an atomic or ion energy beam and bonding the bonding surfaces to each other under normal pressure (about 1 atm) in a continuous apparatus.
摘要:
According to the present invention, as improvement in the adhesion of inner leads with a packaging resin in a resin-sealed semiconductor device is attained by spreading leads on or near the circuit-forming face of a pellet, or on or near the main non-circuit-forming face of the pellet to extend the lengths of the inner leads on or under the pellet.
摘要:
An integrated circuit package in which semiconductor elements mounted on an insulating substrate, ends of lead pieces introduced from the outside and wires that electrically connect them, are accommodated in a cell that is air-tightly defined by the substrate, a cap and a sealing glass. The lead pieces are composed of an alloy having a coefficient of thermal expansion nearly equal to, or smaller than, the coefficient of thermal expansion of the substrate. The alloy is an iron alloy which contains nickel and cobalt, and having a martensite transformation temperture of lower than -55.degree. C.
摘要:
A method of manufacturing a massive mixture of aluminum nitride and aluminum includes a first heat treatment process of manufacturing the massive mixture of aluminum nitride and aluminum by heating aluminum powder (21) and aluminum pieces (20) inserted into a vessel (13) at a temperature of a melting point of aluminum or higher under a nitrogen atmosphere. An oxide film is formed over the surface of the aluminum powder (21). The oxide film is, for example, a natural oxide film. The weight ratio of the aluminum powder (21) to the aluminum pieces (20) is, for example, 0.1 or less.