公开(公告)号：US09231370B2

公开(公告)日：2016-01-05

申请号：US13453743

申请日：2012-04-23

申请人： Takamichi Sumitomo ,  Takashi Kyono ,  Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Masahiro Adachi ,  Shimpei Takagi ,  Katsunori Yanashima

发明人： Takamichi Sumitomo ,  Takashi Kyono ,  Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Masahiro Adachi ,  Shimpei Takagi ,  Katsunori Yanashima

IPC分类号： H01S5/042 ,  H01S5/32 ,  H01S5/343 ,  B82Y20/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/22

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333

摘要： A group III nitride semiconductor laser device includes a laser structure, an insulating layer, an electrode and dielectric multilayers. The laser structure includes a semiconductor region on a semi-polar primary surface of a hexagonal group III nitride semiconductor support base. The dielectric multilayers are on first and second end-faces for the laser cavity. The c-axis of the group III nitride tilts by an angle ALPHA from the normal axis of the primary surface in the waveguide axis direction from the first end-face to the second end-faces. A pad electrode has first to third portions provided on the first to third regions of the semiconductor regions, respectively. An ohmic electrode is in contact with the third region through an opening of the insulating layer. The first portion has a first arm, which extends to the first end-face edge. The third portion is away from the first end-face edge.

摘要翻译： III族氮化物半导体激光器件包括激光器结构，绝缘层，电极和电介质多层。 激光器结构包括在六方晶III族氮化物半导体支撑基体的半极性主表面上的半导体区域。 电介质多层在激光腔的第一和第二端面上。 III族氮化物的c轴从第一端面到第二端面在波导轴线方向上从主面的法线倾斜角度ALPHA。 焊盘电极具有分别设置在半导体区域的第一至第三区域上的第一至第三部分。 欧姆电极通过绝缘层的开口与第三区域接触。 第一部分具有延伸到第一端面边缘的第一臂。 第三部分远离第一端面边缘。

公开(公告)号：US08718110B2

公开(公告)日：2014-05-06

申请号：US13366636

申请日：2012-02-06

申请人： Takashi Kyono ,  Yohei Enya ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

发明人： Takashi Kyono ,  Yohei Enya ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

IPC分类号： H01S5/00

CPC分类号： H01S5/3201 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer.

摘要翻译： 氮化物半导体激光器包括具有氮化镓基半导体的主表面的导电支撑衬底，设置在主表面上方的有源层和设置在主表面上的p型覆层区域。 主表面相对于垂直于在氮化镓基半导体的c轴方向上延伸的参考轴的参考平面倾斜。 p型包层区域包括第一和第二p型III族氮化物半导体层。 第一p型半导体层包括包括内置各向异性应变的InAlGaN层。 第二p型半导体层包括与InAlGaN层的材料不同的半导体。 第一氮化物半导体层设置在第二p型半导体层和有源层之间。 第二p型半导体层的电阻率低于第一p型半导体层的电阻率。

公开(公告)号：US08507305B2

公开(公告)日：2013-08-13

申请号：US13443480

申请日：2012-04-10

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Nobuhiro Saga ,  Masahiro Adachi ,  Kazuhide Sumiyoshi ,  Shinji Tokuyama ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Nobuhiro Saga ,  Masahiro Adachi ,  Kazuhide Sumiyoshi ,  Shinji Tokuyama ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202

摘要： A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which includes a hexagonal III-nitride semiconductor and a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer.

摘要翻译： III族氮化物半导体激光器件具有激光结构和电极。 激光器结构包括支撑基底，其包括六边形III族氮化物半导体和半极性主表面，以及设置在半极性主表面上的半导体区域。 电极设置在半导体区域上。 半导体区域包括第一导电型GaN基半导体的第一包层，第二导电型GaN基半导体的第二包层和设置在第一包层和第二包层之间的有源层。

公开(公告)号：US08953656B2

公开(公告)日：2015-02-10

申请号：US13354053

申请日：2012-01-19

申请人： Takashi Kyono ,  Shimpei Takagi ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Yohei Enya ,  Masaki Ueno ,  Katsunori Yanashima

发明人： Takashi Kyono ,  Shimpei Takagi ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Yohei Enya ,  Masaki Ueno ,  Katsunori Yanashima

IPC分类号： H01S5/00 ,  H01S5/343 ,  H01S5/32 ,  H01S5/02 ,  H01S5/10 ,  H01S5/20

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/2009 ,  H01S5/3202

摘要： A Group III nitride semiconductor laser device includes a laser structure including a support substrate with a semipolar primary surface of a hexagonal Group III nitride semiconductor, and a semiconductor region thereon, and an electrode, provided on the semiconductor region, extending in a direction of a waveguide axis in the laser device. The c-axis of the nitride semiconductor is inclined at an angle ALPHA relative to a normal axis to the semipolar surface toward the waveguide axis direction. The laser structure includes first and second fractured faces intersecting with the waveguide axis. A laser cavity of the laser device includes the first and second fractured faces extending from edges of first and second faces. The first fractured face includes a step provided at an end face of an InGaN layer of the semiconductor region and extending in a direction from one side face to the other of the laser device.

摘要翻译： III族氮化物半导体激光器件包括激光器结构，其包括具有六方晶III族氮化物半导体的半极性主表面的支撑衬底和其上的半导体区域，以及设置在半导体区域上的电极，沿着 波导轴在激光装置中。 氮化物半导体的c轴相对于朝向波导轴方向的半极性表面的法线轴线以一角度ALPHA倾斜。 激光器结构包括与波导轴相交的第一和第二断裂面。 激光装置的激光腔包括从第一和第二面的边缘延伸的第一和第二断裂面。 第一断裂面包括设置在半导体区域的InGaN层的端面并沿从激光器件的一个侧面到另一个的方向延伸的台阶。

公开(公告)号：US08741674B2

公开(公告)日：2014-06-03

申请号：US13335560

申请日：2011-12-22

申请人： Yusuke Yoshizumi ,  Shimpei Takagi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

发明人： Yusuke Yoshizumi ,  Shimpei Takagi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

IPC分类号： H01L21/00 ,  H01L21/8252

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/0287 ,  H01S5/3202 ,  H01S2301/14

摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surface is opposite to a second surface. The first and second fractured faces extend from an edge of the first surface to an edge of the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.

摘要翻译： 本发明提供一种III族氮化物半导体激光器件，其具有激光腔的高激光产生量，其中六边形III族氮化物的c轴向m轴方向倾斜的支撑基底的半极性表面。 第一和第二断裂面形成激光腔与m-n平面相交。 III族氮化物半导体激光器件具有在m-n平面和半极性表面之间的交线的方向上延伸的激光波导。 在激光结构中，第一表面与第二表面相对。 第一和第二断裂面从第一表面的边缘延伸到第二表面的边缘。 断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

公开(公告)号：US08541253B2

公开(公告)日：2013-09-24

申请号：US13416844

申请日：2012-03-09

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Shinji Tokuyama ,  Takamichi Sumitomo ,  Masaki Ueno ,  Takatoshi Ikegami ,  Koji Katayama ,  Takao Nakamura

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Shinji Tokuyama ,  Takamichi Sumitomo ,  Masaki Ueno ,  Takatoshi Ikegami ,  Koji Katayama ,  Takao Nakamura

IPC分类号： H01L21/00

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/34333

摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, the semipolar primary surface including a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, the laser structure including a substrate and a semiconductor region, and the semiconductor region being formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively.

摘要翻译： 一种制造III族氮化物半导体激光器件的方法包括：制备具有半极性主表面的衬底，所述半极性主表面包括六边形III族氮化物半导体; 形成具有激光结构的衬底产品，阳极电极和阴极电极，所述激光器结构包括衬底和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在形成基板产品之后，形成第一和第二端面; 以及分别在第一和第二端面上形成用于氮化物半导体激光器件的光腔的第一和第二电介质多层膜。

公开(公告)号：US20120258557A1

公开(公告)日：2012-10-11

申请号：US13443480

申请日：2012-04-10

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Nobuhiro Saga ,  Masahiro Adachi ,  Kazuhide Sumiyoshi ,  Shinji Tokuyama ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Nobuhiro Saga ,  Masahiro Adachi ,  Kazuhide Sumiyoshi ,  Shinji Tokuyama ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

IPC分类号： H01L33/62

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202

摘要： A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which includes a hexagonal III-nitride semiconductor and a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer.

摘要翻译： III族氮化物半导体激光器件具有激光结构和电极。 激光器结构包括支撑基底，其包括六边形III族氮化物半导体和半极性主表面，以及设置在半极性主表面上的半导体区域。 电极设置在半导体区域上。 半导体区域包括第一导电型GaN基半导体的第一包层，第二导电型GaN基半导体的第二包层和设置在第一包层和第二包层之间的有源层。

公开(公告)号：US08183596B2

公开(公告)日：2012-05-22

申请号：US12846311

申请日：2010-07-29

申请人： Masaki Ueno ,  Takashi Kyono ,  Yohei Enya ,  Takamichi Sumitomo ,  Yusuke Yoshizumi

发明人： Masaki Ueno ,  Takashi Kyono ,  Yohei Enya ,  Takamichi Sumitomo ,  Yusuke Yoshizumi

IPC分类号： H01L21/02 ,  H01L21/338 ,  H01L31/06

CPC分类号： H01L29/7781 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7783

摘要： A high electron mobility transistor includes a free-standing supporting base having a III nitride region, a first III nitride barrier layer which is provided on the first III nitride barrier layer, a III nitride channel layer which is provided on the first III nitride barrier layer and forms a first heterojunction with the first III nitride barrier layer, a gate electrode provided on the III nitride channel layer so as to exert an electric field on the first heterojunction, a source electrode on the III nitride channel layer and the first III nitride barrier, and a drain electrode on the III nitride channel layer and the first III nitride barrier. The III nitride channel layer has compressive internal strain, and the piezoelectric field of the III nitride channel layer is oriented in the direction from the supporting base towards the first III nitride barrier layer. The first heterojunction extends along a plane having a normal axis that is inclined at an inclination angle in the range of 40 degrees to 85 degrees or 140 degrees to 180 degrees with respect to the c-axis of the III nitride region.

摘要翻译： 高电子迁移率晶体管包括具有III族氮化物区域的独立支撑基底，设置在第一III族氮化物阻挡层上的第一III族氮化物阻挡层，设置在第一III族氮化物阻挡层上的III族氮化物沟道层 并与第一III族氮化物阻挡层形成第一异质结，设置在III族氮化物沟道层上以在第一异质结上施加电场的栅电极，III族氮化物沟道层上的源极和第一III族氮化物势垒 ，以及在III族氮化物沟道层和第一III族氮化物屏障上的漏电极。 III族氮化物沟道层具有压缩内部应变，并且III族氮化物沟道层的压电场在从支撑基底朝向第一III族氮化物阻挡层的方向上取向。 第一异质结沿着具有相对于III族氮化物区域的c轴以40度至85度或140度至180度的范围内倾斜的倾斜角的平面延伸。

公开(公告)号：US08809868B2

公开(公告)日：2014-08-19

申请号：US13289813

申请日：2011-11-04

申请人： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Koji Nishizuka

发明人： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Koji Nishizuka

IPC分类号： H01L31/0312 ,  H01L33/00 ,  H01L29/20 ,  H01L31/0304

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/325 ,  H01S5/028 ,  H01S5/2009 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/3202 ,  H01S2302/00 ,  H01S2304/04

摘要： Provided is a Group III nitride semiconductor device, which comprises an electrically conductive substrate including a primary surface comprised of a first gallium nitride based semiconductor, and a Group III nitride semiconductor region including a first p-type gallium nitride based semiconductor layer and provided on the primary surface. The primary surface of the substrate is inclined at an angle in the range of not less than 50 degrees, and less than 130 degrees from a plane perpendicular to a reference axis extending along the c-axis of the first gallium nitride based semiconductor, an oxygen concentration Noxg of the first p-type gallium nitride based semiconductor layer is not more than 5×1017 cm−3, and a ratio (Noxg/Npd) of the oxygen concentration Noxg to a p-type dopant concentration Npd of the first p-type gallium nitride based semiconductor layer is not more than 1/10.

摘要翻译： 提供了一种III族氮化物半导体器件，其包括导电衬底，该导电衬底包括由第一氮化镓基半导体构成的主表面和包含第一p型氮化镓基半导体层的III族氮化物半导体区域， 主表面。 衬底的主表面在垂直于沿着第一氮化镓基半导体的c轴延伸的参考轴的平面的不小于50度且小于130度的范围内倾斜，氧气 第一p型氮化镓系半导体层的浓度Noxg为5×1017cm-3以下，第一p型氮化镓系半导体层的氧浓度Noxg与p型掺杂浓度Npd的比（Noxg / Npd） 型氮化镓系半导体层不大于1/10。

公开(公告)号：US20110175201A1

公开(公告)日：2011-07-21

申请号：US12834977

申请日：2010-07-13

申请人： Shinji Tokuyama ,  Masaki Ueno ,  Masahiro Adachi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Koji Katayama ,  Yoshihiro Saito

发明人： Shinji Tokuyama ,  Masaki Ueno ,  Masahiro Adachi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Koji Katayama ,  Yoshihiro Saito

IPC分类号： H01L29/20

CPC分类号： H01L21/28575 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40

摘要： A Group III nitride semiconductor device has a semiconductor region, a metal electrode, and a transition layer. The semiconductor region has a surface comprised of a Group III nitride crystal. The semiconductor region is doped with a p-type dopant. The surface is one of a semipolar surface and a nonpolar surface. The metal electrode is provided on the surface. The transition layer is formed between the Group III nitride crystal of the semiconductor region and the metal electrode. The transition layer is made by interdiffusion of a metal of the metal electrode and a Group III nitride of the semiconductor region.

摘要翻译： III族氮化物半导体器件具有半导体区域，金属电极和过渡层。 半导体区具有由III族氮化物晶体组成的表面。 半导体区域掺杂有p型掺杂剂。 表面是半极性表面和非极性表面之一。 金属电极设置在表面上。 在半导体区域的III族氮化物晶体和金属电极之间形成过渡层。 过渡层是通过金属电极的金属和半导体区域的III族氮化物的相互扩散而制成的。