公开(公告)号：US08197600B2

公开(公告)日：2012-06-12

申请号：US12076765

申请日：2008-03-21

申请人： Ken Nakao ,  Hitoshi Kato ,  Tsuneyuki Okabe ,  Shigeyuki Okura

发明人： Ken Nakao ,  Hitoshi Kato ,  Tsuneyuki Okabe ,  Shigeyuki Okura

IPC分类号： C23C16/00 ,  C23C16/448

CPC分类号： C23C16/4486

摘要： A vaporizer for generating a process gas from a liquid material includes a heat-exchange lower block having a hollow internal space and disposed below the spray port of an injector inside the container. A run-up space for the atomized liquid material is defined between the spray port and the heat-exchange lower block, and an annular space continuous to the run-up space is defined between an inner surface of the container and the heat-exchange lower block. An internal heater is disposed in the internal space of the heat-exchange lower block and includes a carbon wire formed of woven bundles of carbon fibers and sealed in a ceramic envelope. The internal heater is configured to heat the atomized liquid material flowing through the annular space to generate the process gas.

摘要翻译： 用于从液体材料产生处理气体的蒸发器包括具有中空内部空间并设置在容器内的喷射器的喷雾口下方的热交换下部块。 雾化的液体材料的起始空间被限定在喷射口和热交换下部块之间，并且在容器的内表面和热交换器下部之间限定与起动空间连续的环形空间 块。 内部加热器设置在热交换下部块的内部空间中，并且包括由编织的碳纤维束形成并密封在陶瓷外壳中的碳线。 内部加热器被配置为加热流过环形空间的雾化液体材料以产生处理气体。

公开(公告)号：US08167521B2

公开(公告)日：2012-05-01

申请号：US12225920

申请日：2007-04-23

申请人： Ken Nakao ,  Hitoshi Kato ,  Junichi Hagihara

发明人： Ken Nakao ,  Hitoshi Kato ,  Junichi Hagihara

IPC分类号： H01L21/677

CPC分类号： H01L21/67098 ,  H01L21/6838 ,  H01L21/68707

摘要： The present invention restrains, during a transfer of a substrate, a central portion of the substrate from being warped by its own weight, which might be caused by a super-enlargement of a diameter of the substrate. A substrate transfer apparatus 18 includes: a support part 17 which is moved above a substrate w of a large diameter; and an upside grip mechanism 28 disposed on the support part 17, the upside grip mechanism 28 capable of supporting a peripheral portion of the substrate w from above. The support part 17 is provided with a non-contact sucking and holding part 30 having a suction hole 31 and a blow hole 32. The non-contact sucking and holding part 30 sucks and holds the substrate w in a non-contact manner, by blowing a gas onto the central portion of the upper surface of the substrate w and sucking the central portion to form an air layer 50 such that the central portion of the wafer w is not warped.

摘要翻译： 本发明在衬底的转移期间抑制衬底的中心部分被自身的重量扭曲，这可能是由于衬底的直径的过度扩大引起的。 基板转印装置18包括：支撑部17，其在大直径的基板w上方移动; 以及设置在支撑部17上的上侧夹持机构28，能够从上方支撑基板w的周边部的上侧夹持机构28。 支撑部17设置有具有吸入孔31和气孔32的非接触式吸持保持部30.非接触吸引保持部30以非接触的方式吸附并保持基板w，通过 将气体吹送到基板w的上表面的中心部分并吸附中心部分以形成空气层50，使得晶片w的中心部分不翘曲。

公开(公告)号：US07150628B2

公开(公告)日：2006-12-19

申请号：US10529417

申请日：2004-05-26

申请人： Kenichi Yamaga ,  Ken Nakao

发明人： Kenichi Yamaga ,  Ken Nakao

IPC分类号： F27D5/00

CPC分类号： H01L21/67109

摘要： A single-substrate heat-processing apparatus (2) for a semiconductor processing system includes a process container (4) configured to accommodate a target substrate (W). A support member (6) is disposed in the process container (4) and configured to support the target substrate (W) substantially in a horizontal state, while a bottom surface of the target substrate is exposed. A heating gas supply section (20) is disposed to generate a heating gas and supply the heating gas toward the bottom surface of the target substrate (W). A distribution member (16) is disposed within a flow passage of the heating gas supplied from the heating gas supply section (20), and configured to improve distribution uniformity of the heating gas onto the bottom surface of the target substrate (W).

摘要翻译： 用于半导体处理系统的单衬底加热处理设备（2）包括被配置为容纳目标衬底（W）的处理容器（4）。 支撑构件（6）设置在处理容器（4）中，并且构造成在目标基板的底表面露出时基本上以水平状态支撑目标基板（W）。 设置加热气体供给部（20），以产生加热气体，并向加热气体的底面（W）供给加热气体。 分配构件（16）设置在从加热气体供给部（20）供给的加热气体的流路内，构成为提高加热气体在目标基板（W）的底面上的分布均匀性。

公开(公告)号：US5500388A

公开(公告)日：1996-03-19

申请号：US202457

申请日：1994-02-28

申请人： Reiji Niino ,  Tomoyuki Ohbu ,  Hiroaki Ikegawa ,  Ken Nakao ,  Yoshiyuki Fujita ,  Tsutomu Haraoka ,  Makoto Kobayashi ,  Naoya Kaneda ,  Hiroshi Kumada

发明人： Reiji Niino ,  Tomoyuki Ohbu ,  Hiroaki Ikegawa ,  Ken Nakao ,  Yoshiyuki Fujita ,  Tsutomu Haraoka ,  Makoto Kobayashi ,  Naoya Kaneda ,  Hiroshi Kumada

IPC分类号： C23C16/46 ,  H01L21/20 ,  H01L21/285

CPC分类号： C23C16/463 ,  C23C16/46 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/28512

摘要： In order to form a film on a surface of a semiconductor wafer, a multiplicity of wafers are individually mounted on ring-shaped mounts of a wafer boat, while the temperature within a reaction tube is set at, e.g., 400.degree. C. under a nitrogen gas atmosphere. After loading the wafer boat into the reaction tube, the temperature within the reaction tube is raised up to, e.g., 620.degree. C. at a rate of, e.g., 100.degree. C./min, and SiH.sub.4 gas is supplied onto the surface of a silicon substrate to form a polysilicon film. After film formation, air is forced to flow along the internal surface of the heating section to forcibly cool the interior of the reaction tube. In the case of forming a metal silicon film using a wafer having a silicon substrate and a metal film formed on the surface of the silicon substrate, the temperature within the reaction tube is set at, e.g. 100.degree. C. for loading the wafers. This suppresses the growth of a natural oxidation film and improves characteristics of a semiconductor device. The same principle may apply to an oxide film formation and an impurity dispersion.

摘要翻译： 为了在半导体晶片的表面上形成薄膜，将多个晶片分别安装在晶片舟的环形安装件上，同时将反应管内的温度设定为例如400℃ 氮气气氛。 在将晶片舟装载到反应管中之后，以例如100℃/ min的速率将反应管内的温度升高至例如620℃，并将SiH 4气体供应到 硅衬底以形成多晶硅膜。 成膜后，迫使空气沿加热部的内表面流动，强制冷却反应管的内部。 在使用具有硅衬底和形成在硅衬底的表面上的金属膜的晶片形成金属硅膜的情况下，将反应管内的温度设定为例如 100℃，用于装载晶片。 这抑制了天然氧化膜的生长，并提高了半导体器件的特性。 相同的原理可能适用于氧化膜形成和杂质分散。

公开(公告)号：US5234501A

公开(公告)日：1993-08-10

申请号：US825422

申请日：1992-01-24

申请人： Ken Nakao ,  Sadao Maruchi ,  Yoshio Sakamoto

发明人： Ken Nakao ,  Sadao Maruchi ,  Yoshio Sakamoto

IPC分类号： C30B33/00 ,  H01L21/00

CPC分类号： H01L21/67115 ,  C30B33/005

摘要： The invention provides an oxidation method which utilizes a processing tube, a combustion chamber connected to the processing tube, inner and outer coaxial guide tubes connected to the combustion chamber, and an auxiliary combustion chamber connected to the combustion chamber, which includes the steps of placing a plurality of objects at predetermined intervals in the processing tube; generating steam in the combustion chamber by combustion of a mixture of oxygen and hydrogen gases and supplying the steam to the processing tube wherein the steam is generated by individually introducing oxygen gas and hydrogen gas into the combustion chamber through the outer and inner coaxial guide tubes and by heating the hydrogen gas in the inner guide tube or both the inner guide tube and the auxiliary combustion chamber such that ignition of the oxygen and hydrogen gases occurs when the gases come into contact with each other; and preventing a flame generated by the ignition of the gases from reaching an interior surface portion of at least one of the auxiliary combustion chamber and the combined chamber.

摘要翻译： 本发明提供了一种利用处理管，连接到处理管的燃烧室，连接到燃烧室的内部和外部同轴导管以及连接到燃烧室的辅助燃烧室的氧化方法，其包括以下步骤： 处理管中的预定间隔的多个物体; 通过燃烧氧气和氢气的混合物而在燃烧室中产生蒸气，并将蒸汽供给到处理管中，其中蒸汽是通过外部和内部同轴引导管将氧气和氢气单独引入燃烧室而产生的， 通过加热内导管或内引导管和辅助燃烧室两者中的氢气，使得当气体彼此接触时，发生氧气和氢气的点燃; 并且防止由气体点燃产生的火焰到达辅助燃烧室和组合室中的至少一个的内表面部分。

公开(公告)号：US4937434A

公开(公告)日：1990-06-26

申请号：US312500

申请日：1989-02-21

申请人： Ken Nakao

发明人： Ken Nakao

IPC分类号： G01K1/14 ,  G05D23/22 ,  H01L21/00

CPC分类号： H01L21/67109 ,  G01K1/146 ,  G05D23/1934 ,  G05D23/22

摘要： In a heat treatment apparatus, a temperature measuring element is arranged to be movable along an arrangement direction of a large number of objects placed in a process tube. A temperature distribution of a heat treatment area inside the process tube can be continuously measured by this temperature measuring element with high accuracy. As a result, internal temperature control of the process tube can be facilitated with high precision.

摘要翻译： 在热处理装置中，温度测量元件布置成沿着放置在处理管中的大量物体的布置方向移动。 可以通过该温度测量元件以高精度连续地测量处理管内的热处理区域的温度分布。 结果，可以高精度地促进处理管的内部温度控制。

公开(公告)号：US08546185B2

公开(公告)日：2013-10-01

申请号：US13399482

申请日：2012-02-17

申请人： Ken Nakao ,  Muneo Harada ,  Itaru Iida ,  Eiji Yamaguchi

发明人： Ken Nakao ,  Muneo Harada ,  Itaru Iida ,  Eiji Yamaguchi

IPC分类号： H01L21/50

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/05551 ,  H01L2224/0557 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11002 ,  H01L2224/11332 ,  H01L2224/11505 ,  H01L2224/13009 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13294 ,  H01L2224/13339 ,  H01L2224/8184 ,  H01L2224/81986 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2224/05552 ,  H01L2924/00

摘要： Provided is a method for manufacturing a semiconductor device which includes: providing a plurality of semiconductor substrates formed with through holes which penetrate between main surfaces of the substrates and are filled with porous conductors; stacking the plurality of semiconductor substrates while aligning the porous conductors filled in the through holes; introducing conductive ink containing particle-like conductors into the porous conductors of the plurality of stacked semiconductor substrates; and sintering the plurality of stacked semiconductor substrates.

摘要翻译： 本发明提供一种半导体器件的制造方法，其特征在于，具备：多个半导体基板，形成有穿过所述基板的主面之间的通孔，并填充有多孔导体; 在对准填充在通孔中的多孔导体的同时堆叠多个半导体衬底; 将含有粒状导体的导电油墨引入到所述多个堆叠半导体衬底的多孔导体中; 并烧结多个堆叠的半导体衬底。

公开(公告)号：US08476560B2

公开(公告)日：2013-07-02

申请号：US12320433

申请日：2009-01-26

申请人： Makoto Kobayashi ,  Kenichi Yamaga ,  Ken Nakao

发明人： Makoto Kobayashi ,  Kenichi Yamaga ,  Ken Nakao

IPC分类号： F27B5/14 ,  F27D11/02 ,  H05B3/66

CPC分类号： H01L21/67109 ,  F27B17/0025 ,  F27D11/02 ,  F27D99/0006 ,  H05B3/08

摘要： A thermal processing furnace comprises: a tubular heat insulation member 4 surrounding a processing vessel 3 for receiving and thermally processing an object to be processed w; a heating resistor 5 helically arranged on an inner circumferential surface of the heat insulation member 4; and a support member 13 disposed on the inner circumferential surface of the heat insulation member 4, the support member 13 supporting the heating resistor 5 such that the heating resistor 5 can be thermally expanded and thermally shrunk. The thermal processing furnace further comprises: a movement prevention member 15 disposed on the heating resistor 5 to be in contact with one side surface of the support member 13 so as to prevent a downward movement of the heating resistor 5.

公开(公告)号：US08033823B2

公开(公告)日：2011-10-11

申请号：US11922010

申请日：2006-06-12

申请人： Ken Nakao ,  Kazuhiko Kato

发明人： Ken Nakao ,  Kazuhiko Kato

IPC分类号： F27D3/12

CPC分类号： C23C16/46 ,  C23C16/4411 ,  C23C16/54 ,  H01L21/324 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67109 ,  Y10T29/4935

摘要： The present invention is a heat processing apparatus comprising: a processing vessel that receives a plurality of objects to be processed in a tier-like manner to subject the objects to be processed to a predetermined heating process; a tubular heater disposed to surround the processing vessel, the tubular heater being capable of heating the objects to be processed; an exhaust heat system for discharging an atmosphere in a space between the heater and the processing vessel; and a cooling unit that blows out a cooling fluid into the space to cool the processing vessel. The heater has a tubular heat insulating member, and a heating resistor arranged on an inner circumference of the heat insulating member. The cooling unit has a plurality of blowing nozzles embedded in the heat insulating member. Each of the blowing nozzles is formed in such a manner that an inlet orifice of the blowing nozzle and an outlet orifice thereof are not linearly aligned to each other.

摘要翻译： 本发明是一种热处理装置，包括：处理容器，其以层状方式接收待处理的多个物体，以对被处理物进行预定的加热处理; 管状加热器，其设置成围绕处理容器，所述管状加热器能够加热被处理物体; 用于排出加热器和处理容器之间的空间中的气氛的排气系统; 以及将冷却流体吹入空间以冷却处理容器的冷却单元。 加热器具有管状绝热构件和布置在绝热构件的内周上的加热电阻器。 冷却单元具有嵌入绝热构件中的多个吹出喷嘴。 每个喷吹嘴都以这样的方式形成，使得喷嘴的入口孔和出口孔彼此不直线对准。

公开(公告)号：US20090175705A1

公开(公告)日：2009-07-09

申请号：US12225920

申请日：2007-04-23

申请人： Ken Nakao ,  Hitoshi Kato ,  Junichi Hagihara

发明人： Ken Nakao ,  Hitoshi Kato ,  Junichi Hagihara

IPC分类号： H01L21/677 ,  B25B11/00 ,  H01L21/673 ,  H01L21/68

CPC分类号： H01L21/67098 ,  H01L21/6838 ,  H01L21/68707

摘要： The present invention restrains, during a transfer of a substrate, a central portion of the substrate from being warped by its own weight, which might be caused by a super-enlargement of a diameter of the substrate. A substrate transfer apparatus 18 includes: a support part 17 which is moved above a substrate w of a large diameter; and an upside grip mechanism 28 disposed on the support part 17, the upside grip mechanism 28 capable of supporting a peripheral portion of the substrate w from above. The support part 17 is provided with a non-contact sucking and holding part 30 having a suction hole 31 and a blow hole 32. The non-contact sucking and holding part 30 sucks and holds the substrate w in a non-contact manner, by blowing a gas onto the central portion of the upper surface of the substrate w and sucking the central portion to form an air layer 50 such that the central portion of the wafer w is not warped.

摘要翻译： 本发明在衬底的转移期间抑制衬底的中心部分被自身的重量扭曲，这可能是由于衬底的直径的过度扩大引起的。 基板转印装置18包括：支撑部17，其在大直径的基板w上方移动; 以及设置在支撑部17上的上侧夹持机构28，能够从上方支撑基板w的周边部的上侧夹持机构28。 支撑部17设置有具有吸入孔31和气孔32的非接触式吸持保持部30.非接触吸引保持部30以非接触的方式吸附并保持基板w，通过 将气体吹送到基板w的上表面的中心部分并吸附中心部分以形成空气层50，使得晶片w的中心部分不翘曲。