公开(公告)号：US20070148952A1

公开(公告)日：2007-06-28

申请号：US11318137

申请日：2005-12-23

申请人： Kevin O'Brien ,  Chin-Chang Cheng ,  Ramanan Chebiam ,  Valery Dubin ,  Sridhar Balakrishnan

发明人： Kevin O'Brien ,  Chin-Chang Cheng ,  Ramanan Chebiam ,  Valery Dubin ,  Sridhar Balakrishnan

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  B82Y30/00 ,  H01L21/288 ,  H01L21/76874

摘要： Methods of fabricating interconnect structures utilizing barrier material layers formed with an electroless deposition technique utilizing a coupling agent complexed with a catalytic metal and structures formed thereby. The fabrication fundamentally comprises providing a dielectric material layer having an opening extending into the dielectric material from a first surface thereof, bonding the coupling agent to the dielectric material within the opening, and electrolessly depositing the barrier material layer, wherein the electrolessly deposited barrier material layer material adheres to the catalytic metal of the coupling agent.

摘要翻译： 使用利用与催化金属复合的偶联剂和由此形成的结构的化学沉积技术形成的阻挡材料层来制造互连结构的方法。 该制造基本上包括提供介电材料层，其具有从其第一表面延伸到电介质材料中的开口，将该耦合剂粘合到该开口内的电介质材料，以及无电沉积阻挡材料层，其中该无电沉积阻挡材料层 材料粘附到偶联剂的催化金属上。

公开(公告)号：US20070085162A1

公开(公告)日：2007-04-19

申请号：US11469263

申请日：2006-08-31

申请人： Kevin O'Brien ,  Justin Brask

发明人： Kevin O'Brien ,  Justin Brask

IPC分类号： B05C3/00 ,  H01L29/00

CPC分类号： H01L21/76849 ,  C23C18/161 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/1666 ,  C23C18/31 ,  H01L21/288

摘要： Capping of copper structures in hydrophobic interlayer dielectric layer, using aqueous electro-less bath is described herein.

摘要翻译： 本文描述了使用水性无电极浴来疏水层间介电层中铜结构的封盖。

公开(公告)号：US20070004230A1

公开(公告)日：2007-01-04

申请号：US11173858

申请日：2005-06-30

申请人： Steven Johnston ,  Kevin O'Brien ,  Sridhar Balakrishnan

发明人： Steven Johnston ,  Kevin O'Brien ,  Sridhar Balakrishnan

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02074 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/3141 ,  H01L21/76807

摘要： A method for forming a semiconductor device is disclosed wherein atomic layer deposition (ALD) precursor species and/or by-product absorbed by an ILD are outgassed and/or neutralized prior to subsequently patterning the semiconductor device, thereby improving the ability to accurately define subsequently formed interconnect structures in the ILD.

摘要翻译： 公开了一种用于形成半导体器件的方法，其中在随后对半导体器件进行图案化之前，由ILD吸收的原子层沉积（ALD）前体物质和/或副产物被除气和/或中和，从而提高随后对 在ILD中形成互连结构。

公开(公告)号：US20060255432A1

公开(公告)日：2006-11-16

申请号：US11485078

申请日：2006-07-12

申请人： Robert Meagley ,  Kevin O'Brien ,  Tian-An Chen ,  Michael Goodner ,  James Powers ,  Huey-Chiang Liou

发明人： Robert Meagley ,  Kevin O'Brien ,  Tian-An Chen ,  Michael Goodner ,  James Powers ,  Huey-Chiang Liou

IPC分类号： H01L23/58

CPC分类号： H01L23/5222 ,  H01L21/02118 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/02164 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/312 ,  H01L21/76224 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure may be covered with a thermally decomposing film. That film may then be covered by a sealing cover. Subsequently, the thermally decomposing material may be decomposed, forming a cavity.

公开(公告)号：US20060251870A1

公开(公告)日：2006-11-09

申请号：US11120870

申请日：2005-05-03

申请人： Kevin O'Brien ,  Frederic Taillan

发明人： Kevin O'Brien ,  Frederic Taillan

IPC分类号： B32B3/00

CPC分类号： B44C5/0476 ,  Y10T428/24372 ,  Y10T428/24802 ,  Y10T428/24876 ,  Y10T428/24942 ,  Y10T428/25 ,  Y10T428/256 ,  Y10T428/31942

摘要： A decorative laminate having improved scratch and abrasion resistance is provided. In one embodiment, the decorate laminate includes a substrate or core, a decorative sheet on the substrate, and an overlay sheet on the decorative sheet. The overlay sheet is coated on both major surfaces to provide scratch and abrasion resistance to the laminate. The coating on the interior facing surface contains mineral particles having a particle size of from between about 10-30 microns. The coating on the exterior facing surface contains a mixture of first mineral particles having a particle size of from between about 3-8 microns and second mineral particles having a particle size of less than about 1.0 micron. The first mineral particles are preferably alumina particles, and the second mineral particles are preferably sol gel process alumina particles.

摘要翻译： 提供了具有改善的耐刮擦和耐磨性的装饰层压板。 在一个实施例中，装饰层压板包括基底或芯，衬底上的装饰片和装饰片上的覆盖片。 覆盖片材涂覆在两个主表面上，以提供对层压板的耐刮擦和耐磨性。 面向内表面上的涂层含有粒度为约10-30微米的矿物颗粒。 面向外表面上的涂层含有粒度为约3-8微米的第一矿物颗粒和粒度小于约1.0微米的第二矿物颗粒的混合物。 第一矿物颗粒优选为氧化铝颗粒，并且第二矿物颗粒优选为溶胶凝胶法氧化铝颗粒。

公开(公告)号：US20060112626A1

公开(公告)日：2006-06-01

申请号：US10987400

申请日：2004-11-12

申请人： Mimi Liu ,  Kevin O'Brien ,  Mark Ensworth

发明人： Mimi Liu ,  Kevin O'Brien ,  Mark Ensworth

IPC分类号： A01G29/00

CPC分类号： A01G25/06

摘要： A watering device for providing water to a sub-surface level is provided. The watering device includes a body portion for distributing water radially therefrom and along its length. The watering device includes an irrigation assembly for emitting water from a water source, the irrigation assembly emitting the water within the watering device, and the water then being distributed through the body portion to surrounding soil. The irrigation assembly may be supported by the body portion. The irrigation assembly may include a bubbler, and may include a check valve. The device may include a top cap including retaining structure for providing a generally vertical or other desired orientation to the irrigation assembly. The device may further include a bottom cap that generally restricts the flow of water out of the bottom of the device and cooperates with body portion to direct water radially from the device.

摘要翻译： 提供了一种用于向亚表面水平提供水的浇水装置。 浇水装置包括用于沿其长度沿径向分配水的主体部分。 浇水装置包括一个用于从水源排出水的冲洗组件，该冲洗组件将浇水装置内的水排放出来，然后将水通过主体部分分配给周围的土壤。 灌注组件可以由主体部分支撑。 灌溉组件可以包括起泡器，并且可以包括止回阀。 该装置可以包括顶盖，其包括保持结构，用于向冲洗组件提供大致垂直或其它期望的取向。 该装置还可包括底盖，该底盖通常限制水流出设备的底部，并与主体部分配合以将水从该装置径向引导。

公开(公告)号：US20050227488A1

公开(公告)日：2005-10-13

申请号：US10814592

申请日：2004-03-31

申请人： Kevin O'Brien ,  Justin Brask

发明人： Kevin O'Brien ,  Justin Brask

IPC分类号： C23C18/16 ,  C23C18/31 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768

CPC分类号： H01L21/76849 ,  C23C18/161 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/1666 ,  C23C18/31 ,  H01L21/288

摘要： Capping of copper structures in hydrophobic interlayer dielectric layer, using aqueous electro-less bath is described herein.

摘要翻译： 本文描述了使用水性无电极浴来疏水层间介电层中铜结构的封盖。

公开(公告)号：US20050106886A1

公开(公告)日：2005-05-19

申请号：US10715956

申请日：2003-11-17

申请人： Michael Goodner ,  Robert Meagley ,  Kevin O'Brien

发明人： Michael Goodner ,  Robert Meagley ,  Kevin O'Brien

IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76808 ,  H01L21/31144 ,  H01L21/76802

摘要： Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding dielectric. This is particularly useful in a dual damascene process where the SLAM fills a via opening and is etched along with a surrounding dielectric material to form trenches overlying the via opening.

摘要翻译： 描述了几种用于通过改变其组成以使其与周围电介质的蚀刻速率相匹配来调节牺牲光吸收材料（SLAM）的蚀刻速率的技术。 这在双镶嵌工艺中特别有用，其中SLAM填充通孔开口并与周围的电介质材料一起蚀刻以形成覆盖通孔开口的沟槽。

公开(公告)号：US20050042874A1

公开(公告)日：2005-02-24

申请号：US10953744

申请日：2004-09-29

申请人： Robert Meagley ,  Peter Moon ,  Kevin O'Brien

发明人： Robert Meagley ,  Peter Moon ,  Kevin O'Brien

IPC分类号： H01L21/768 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76808

摘要： A thermally decomposable sacrificial material is deposited in a void or opening in a dielectric layer on a semiconductor substrate. The thermally decomposable sacrificial material may be removed without damaging or removing the dielectric layer. The thermally decomposable sacrificial material may be a combination of organic and inorganic materials, such as a hydrocarbon-siloxane polymer hybrid.

摘要翻译： 将可热分解的牺牲材料沉积在半导体衬底上的电介质层的空隙或开口中。 可以除去可热分解的牺牲材料而不损坏或去除介电层。 可热分解的牺牲材料可以是有机和无机材料的组合，例如烃 - 硅氧烷聚合物杂化物。

公开(公告)号：US20190304524A1

公开(公告)日：2019-10-03

申请号：US15942349

申请日：2018-03-30

申请人： Kaan Oguz ,  Charles Kuo ,  Mark Doczy ,  Kevin O'Brien

发明人： Kaan Oguz ,  Charles Kuo ,  Mark Doczy ,  Kevin O'Brien

IPC分类号： G11C11/16 ,  H01L43/12 ,  H01L43/10 ,  H01L27/22

摘要： A perpendicular spin orbit torque (SOT) memory device includes an electrode having a spin orbit torque material and a perpendicular magnetic tunnel junction (pMTJ) device on a portion of the electrode. The pMTJ device includes a free magnet structure electrode, where the free magnet structure includes a free magnet that is dipole coupled with a magnetic stability enhancement layer. The pMTJ device further includes a fixed layer and a tunnel barrier between the free layer and the fixed layer.