公开(公告)号：US20100090759A1

公开(公告)日：2010-04-15

申请号：US12585724

申请日：2009-09-23

申请人： Jai-kwang Shin ,  Sun-ae Seo ,  Jong-seob Kim ,  Ki-ha Hong ,  Hyun-jong Chung

发明人： Jai-kwang Shin ,  Sun-ae Seo ,  Jong-seob Kim ,  Ki-ha Hong ,  Hyun-jong Chung

IPC分类号： H03H11/24 ,  H01L29/66 ,  H01L21/336

CPC分类号： H01L29/7613 ,  B82Y10/00 ,  H01L29/1029 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/66977

摘要： A quantum interference transistor may include a source; a drain; N channels (N≧2), between the source and the drain, and having N−1 path differences between the source and the drain; and at least one gate disposed at one or more of the N channels. One or more of the N channels may be formed in a graphene sheet. A method of manufacturing the quantum interference transistor may include forming one or more of the N channels using a graphene sheet. A method of operating the quantum interference transistor may include applying a voltage to the at least one gate. The voltage may shift a phase of a wave of electrons passing through a channel at which the at least one gate is disposed.

摘要翻译： 量子干涉晶体管可以包括源极; 排水 在源极和漏极之间的N沟道（N≥2），源极和漏极之间具有N-1个路径差; 以及设置在所述N个通道中的一个或多个的至少一个门。 N个通道中的一个或多个可以形成在石墨烯片中。 制造量子干涉晶体管的方法可以包括使用石墨烯片形成N个通道中的一个或多个。 操作量子干涉晶体管的方法可以包括向至少一个栅极施加电压。 电压可以使通过通道的电子的波的相位偏移至设置至少一个栅极的通道。

公开(公告)号：US20100079130A1

公开(公告)日：2010-04-01

申请号：US12385284

申请日：2009-04-03

申请人： Ki-ha Hong ,  Hyuk-soon Choi ,  Jong-seob Kim ,  Jai-kwang Shin

发明人： Ki-ha Hong ,  Hyuk-soon Choi ,  Jong-seob Kim ,  Jai-kwang Shin

IPC分类号： G01N27/00

CPC分类号： G01N29/036 ,  G01N2291/0257 ,  Y10S977/957

摘要： Provided is a chemical sensor that may include a first electrode on a substrate, a sensing member covering the first electrode on the substrate, and a plurality of second electrodes on a surface of the sensing member exposing the surface of the sensing member. The chemical sensor may be configured to measure the change in electrical characteristics when a compound to be sensed is adsorbed on the sensing member. Provided also is a chemical sensor array including an array of chemical sensors.

摘要翻译： 提供了一种化学传感器，其可以包括在基板上的第一电极，覆盖基板上的第一电极的感测构件和暴露感测构件的表面的感测构件的表面上的多个第二电极。 化学传感器可以被配置为当要感测的化合物吸附在感测构件上时测量电特性的变化。 还提供了包括化学传感器阵列的化学传感器阵列。

公开(公告)号：US07566514B2

公开(公告)日：2009-07-28

申请号：US10685797

申请日：2003-10-16

申请人： Sung-hoon Lee ,  Chan-ho Pak ,  Hyuk Chang ,  Jai-kwang Shin

发明人： Sung-hoon Lee ,  Chan-ho Pak ,  Hyuk Chang ,  Jai-kwang Shin

IPC分类号： H01M4/44

CPC分类号： H01M4/926 ,  H01M4/8605 ,  H01M4/921

摘要： A catalyst particle having high oxygen reduction reactivity and low methanol oxidation reactivity, a supported catalyst comprising the catalyst particle, and a fuel cell using a cathode comprising the supported catalyst are provided. The whole catalyst particle or at least the surface of the catalyst particle includes an alloy of two or more metals selected from the group consisting of Fe, Co, Ni, Rh, Pd, Pt, Cu, Ag, Au, Zn, and Cd. The alloy has a stronger oxygen-binding force than platinum or a weaker hydrogen-binding force than platinum.

摘要翻译： 提供具有高氧还原反应性和低甲醇氧化反应性的催化剂颗粒，包含催化剂颗粒的负载催化剂和使用包含负载催化剂的阴极的燃料电池。 整个催化剂颗粒或至少催化剂颗粒的表面包括选自Fe，Co，Ni，Rh，Pd，Pt，Cu，Ag，Au，Zn和Cd中的两种或更多种金属的合金。 该合金具有比铂更强的氧结合力或比铂更弱的氢结合力。

公开(公告)号：US08471640B2

公开(公告)日：2013-06-25

申请号：US13064627

申请日：2011-04-05

申请人： Hyun-sik Choi ,  Ho-jung Kim ,  Jai-kwang Shin

发明人： Hyun-sik Choi ,  Ho-jung Kim ,  Jai-kwang Shin

IPC分类号： H03B17/00

CPC分类号： H03B15/006

摘要： Oscillators and methods of operating the oscillators are provided, the oscillators include an oscillating unit including at least one magnetic layer having a magnetization direction that varies according to at least one selected from the group consisting of an applied current, an applied voltage and an applied magnetic field. The oscillating unit is configured to generate an oscillation signal having a set frequency. The oscillators further include an output stage that provides an output signal by differentially amplifying the oscillation signal.

摘要翻译： 提供振荡器和操作振荡器的方法，振荡器包括振荡单元，该振荡单元包括至少一个具有磁化方向的磁性层，磁化方向根据从施加的电流，施加的电压和施加的磁体中选择的至少一个而变化 领域。 振荡单元被配置为产生具有设定频率的振荡信号。 振荡器还包括通过差分放大振荡信号来提供输出信号的输出级。

公开(公告)号：US08310014B2

公开(公告)日：2012-11-13

申请号：US13317734

申请日：2011-10-27

申请人： David Seo ,  Jai-kwang Shin ,  Sun-ae Seo

发明人： David Seo ,  Jai-kwang Shin ,  Sun-ae Seo

IPC分类号： H01L29/78

CPC分类号： H01L21/3146 ,  H01L21/02115 ,  H01L21/02269 ,  H01L21/0237 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/1606 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78684

摘要： Field effect transistors, methods of fabricating a carbon insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor using the same are provided, the methods of fabricating the carbon insulating layer include maintaining a substrate disposed in a molecular beam epitaxy chamber at a temperature in a range of about 300° C. to about 500° C. and maintaining the chamber in vacuum of 10−11 Torr or less prior to performing an epitaxy process, and supplying a carbon source to the chamber to form a carbon insulating layer on the substrate. The carbon insulating layer is formed of diamond-like carbon and tetrahedral amorphous carbon.

公开(公告)号：US20120112796A1

公开(公告)日：2012-05-10

申请号：US13064627

申请日：2011-04-05

申请人： Hyun-sik Choi ,  Ho-jung Kim ,  Jai-kwang Shin

发明人： Hyun-sik Choi ,  Ho-jung Kim ,  Jai-kwang Shin

IPC分类号： H03K5/01

CPC分类号： H03B15/006

摘要： Oscillators and methods of operating the oscillators are provided, the oscillators include an oscillating unit including at least one magnetic layer having a magnetization direction that varies according to at least one selected from the group consisting of an applied current, an applied voltage and an applied magnetic field. The oscillating unit is configured to generate an oscillation signal having a set frequency. The oscillators further include an output stage that provides an output signal by differentially amplifying the oscillation signal.

摘要翻译： 提供振荡器和操作振荡器的方法，振荡器包括振荡单元，该振荡单元包括至少一个具有磁化方向的磁性层，磁化方向根据从施加的电流，施加的电压和施加的磁体中选择的至少一个而变化 领域。 振荡单元被配置为产生具有设定频率的振荡信号。 振荡器还包括通过差分放大振荡信号来提供输出信号的输出级。

公开(公告)号：US20110068317A1

公开(公告)日：2011-03-24

申请号：US12926444

申请日：2010-11-18

申请人： Hyuk-soon Choi ,  Ji-hyun Hur ,  Yoon-ho Kang ,  Hyo-sug Lee ,  Jai-kwang Shin ,  Jae-joon Oh

发明人： Hyuk-soon Choi ,  Ji-hyun Hur ,  Yoon-ho Kang ,  Hyo-sug Lee ,  Jai-kwang Shin ,  Jae-joon Oh

IPC分类号： H01L45/00

CPC分类号： H01L45/1246 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675 ,  Y10T29/49002

摘要： A phase change memory device includes a switching device and a storage node connected to the switching device. The storage node includes a bottom stack, a phase change layer disposed on the bottom stack and a top stack disposed on the phase change layer. The phase change layer includes a unit for increasing a path of current flowing through the phase change layer and reducing a volume of a phase change memory region. The area of a surface of the unit disposed opposite to the bottom stack is greater than or equal to the area of a surface of the bottom stack in contact with the phase change layer.

摘要翻译： 相变存储器件包括开关器件和连接到开关器件的存储节点。 存储节点包括底部堆叠，设置在底部堆叠上的相变层和设置在相变层上的顶部堆叠。 相变层包括用于增加流过相变层的电流的路径并减小相变存储区的体积的单元。 与底部叠层相对设置的单元的表面的面积大于或等于与相变层接触的底部叠层的表面的面积。

公开(公告)号：US20080173859A1

公开(公告)日：2008-07-24

申请号：US12000716

申请日：2007-12-17

申请人： Ji-hyun Hur ,  Yoon-ho Khang ,  Hyo-sug Lee ,  Hyuk-soon Choi ,  Jai-kwang Shin ,  Jae-joon Oh

发明人： Ji-hyun Hur ,  Yoon-ho Khang ,  Hyo-sug Lee ,  Hyuk-soon Choi ,  Jai-kwang Shin ,  Jae-joon Oh

IPC分类号： H01L47/00

CPC分类号： G11C13/0004 ,  G11C11/5678 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/122 ,  H01L45/144 ,  H01L45/1675

摘要： A storage node, phase change memory device having a storage node, a method of fabricating the phase change memory device and a method of operating the phase change memory device are provided. The phase change memory device includes a switching device and a storage node connecting to the switching device. The storage node includes a bottom electrode, a phase change layer formed on the bottom electrode, a material layer formed on the phase change layer and a top electrode formed on the phase change layer around the material layer.

摘要翻译： 提供了具有存储节点的存储节点，相变存储器件，制造相变存储器件的方法和操作相变存储器件的方法。 相变存储器件包括连接到开关器件的开关器件和存储节点。 存储节点包括底电极，形成在底电极上的相变层，形成在相变层上的材料层和形成在材料层周围的相变层上的顶电极。

公开(公告)号：US07119489B2

公开(公告)日：2006-10-10

申请号：US10386940

申请日：2003-03-13

申请人： Jai-kwang Shin ,  Seong-gu Kim ,  Young-kyou Park ,  Hyeon-ill Um

发明人： Jai-kwang Shin ,  Seong-gu Kim ,  Young-kyou Park ,  Hyeon-ill Um

IPC分类号： H01J25/50

CPC分类号： H01J37/3408 ,  C23C14/35 ,  H01J9/236 ,  H01J23/10 ,  H01J37/3455

摘要： An RMIM electrode, a method for manufacturing the RMIM electrode, and a sputtering apparatus using the RMIM electrode, wherein the RMIM electrode includes a magnet unit including a cylinder-shaped magnet located at a center of the magnet unit and a plurality of ring-shaped magnets having increasingly larger diameters surrounding the cylinder-shaped magnet; and a driver unit for supporting and for off-axis-rotating the magnet unit, wherein in the magnet unit, adjacent magnets have opposite magnetization directions.

公开(公告)号：US09525410B2

公开(公告)日：2016-12-20

申请号：US13588488

申请日：2012-08-17

申请人： Ho-jung Kim ,  Jai-kwang Shin ,  U-in Chung ,  Hyun-sik Choi

发明人： Ho-jung Kim ,  Jai-kwang Shin ,  U-in Chung ,  Hyun-sik Choi

IPC分类号： H03K17/687 ,  H02M1/08 ,  H02M3/337 ,  H01L29/778 ,  H01L29/16 ,  H01L29/20 ,  H01L21/82 ,  H01L21/8252

CPC分类号： H03K17/687 ,  H01L21/8213 ,  H01L21/8252 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/7787 ,  H02M1/08 ,  H02M3/337 ,  H03K2217/0036 ,  H03K2217/0063 ,  H03K2217/0072 ,  H03K2217/0081

摘要： A power management chip and a power management device including the power management chip. The power management chip includes at least one power switch and a driver unit for generating a driving signal for driving the at least one power switch, the driver unit including one or more circuit units formed on a same substrate as the at least one power switch.

摘要翻译： 电源管理芯片和包括电源管理芯片的电源管理装置。 电源管理芯片包括至少一个电源开关和驱动器单元，用于产生用于驱动至少一个电源开关的驱动信号，所述驱动器单元包括形成在与所述至少一个电源开关相同的基板上的一个或多个电路单元。