摘要:
The invention provides a foamable organopolysiloxane composition capable of giving, by foaming and curing at room temperature, a silicone rubber foam of high foaming expansion having very uniform and dense cellular structure. The composition is prepared by a process comprising the steps of: (A) compounding an .alpha.,.omega.-dihydroxy dimethylpolysiloxane with a reinforcing silica filler, hexamethyl disilazane and water as the hydrolysis agent of the silazane to give a compound; (B) removing ammonia in the compound formed by the hydrolysis of the silazane compound as completely as possible; and (C) compounding the compound with a polyhydroxy methylpolysiloxane, an organohydrogenpolysiloxane and a platinum compound as a catalyst for the dehydrogenation reaction between the silanolic hydroxy groups and the silicon-bonded hydrogen atoms to produce hydrogen as the foaming gas.
摘要:
The essential components in the inventive room temperature-curable organopolysiloxane composition are: (A-1) a diorganopolysiloxane of which each terminal silicon atom has a silanolic hydroxy group or two alkoxy groups; (A-2) a filler; (A-3) an alkenyloxy silane, e.g. methyl tri)isopropenyloxy)silane; (A-4) a guanidino-containing organosilicon compound, e.g. 3-(tetramethylguanidino)propyl trimethoxy silane; (A-5) an alcohol, e.g. methyl or ethyl alcohol; (B) an organosilicon compound having a silicon-bonded hydrogen atom; and (C) an organic tin compound as a catalyst. By virtue of the unique formulation above, the composition is very stable in storage in a moisture-free condition for a long period of time without losing the high curability when exposed to a moisture-containing atmosphere.
摘要:
The invention provides a room temperature-curable organopolysiloxane composition curable into a rubbery elastomer, which has excellent storage stability under a moisture-free condition without losing high curability. The composition comprises, in addition to the conventional essential ingredients of a hydroxy- or alkoxy-terminated diorganopolysiloxane, filler, triisopropenyloxy silane compound as a crosslinking agent and a guanidino-containing organosilicon compound as a curing aid, an amino-containing silane compound such as MeSi[NH--C.sub.3 H.sub.6 --Si(OEt).sub.3 ].sub.3 and MeSi[NH--C.sub.2 H.sub.4 NHC.sub.3 H.sub.6 --Si(OMe).sub.3 ].sub.3.
摘要翻译:本发明提供可固化到橡胶弹性体中的室温可固化的有机基聚硅氧烷组合物,其在无湿度条件下具有优异的储存稳定性,而不损失高固化性。 除了作为交联剂的填充剂,作为交联剂的三异丙烯基氧基硅烷化合物和作为固化助剂的含胍基的有机硅化合物的常规必需成分之外,还包含含氨基的硅烷化合物,例如 MeSi [NH-C3H6-Si(OEt)3] 3和MeSi [NH-C2H4NHC3H6-Si(OMe)3] 3。
摘要:
The room temperature-curable organopolysiloxane composition of the invention capable of giving a cured rubber can be used advantageously as an insulating material in electric and electronic instruments without causing troubles in contact points which is unavoidable with conventional compositions. The inventive composition is formulated with (a) a diorganopolysiloxane terminated at the molecule molecular chain ends each with a silanolic hydroxy group, (b) an alkenyloxy, e.g. isopropenyloxy, containing silane and (c) a guanidino-substituted organosilicon compound and these components are specified either by the upper limit of the content of low molecular constituents having a specified vapor pressure or higher or the upper limit of the vapor pressure of the compound per se so that the electric contact points near the insulation with the composition are free from exposure to the vapor of organosilicon compounds which may be deposited as an oxide of silicon by sparks.
摘要:
A novel carbon functional organosilicon compound represented by the general formula: ##STR1## wherein R.sup.1 represents a group represented by the formula: ##STR2## wherein R.sup.3 represents a hydrogen atom or a methyl group, or a group represented by the formula: ##STR3## R.sup.2, which may be the same or different, each represent a substituted or unsubstituted univalent C.sub.1 to C.sub.8 hydrocarbon group; and m is an integer of from 2 to 5. This carbon functional compound can easily cause crosslinking reaction on heating, for instance, without forming any by-product. It is useful as a material for modification of acrylic or methacrylic resin, epoxy resin or the like.
摘要:
The invention provides a novel class of cyclic organotetrasiloxanes represented by the general formula ##STR1## in which R.sup.1 is a monovalent hydrocarbon group, e.g. methyl, Y is a hydrogen atom or a dialkylaminoxy group and X is a hydrocarbylideneiminopropyl group.
摘要:
There are provided a novel compound, a polymeric compound, a resist composition, an acid generator and a method of forming a resist pattern the compound represented by general formula (1-1): wherein each of R1 and R3 independently represents a single bond or a divalent linking group; A represents a divalent linking group; each of R2 and R4 independently represents a hydroxyl group, a hydrocarbon group which may have a substituent, or a group represented by general formula (1-an1), (1-an2) or (1-an3), provided that at least one of R2 and R4 represents a group represented by general formula (1-an1), (1-an2) or (1-an3); and n0 is preferably 0 or 1, and wherein Y1 represents a single bond or —SO2—; R5 represents a linear or branched monovalent hydrocarbon group of 1 to 10 carbon atoms, cyclic monovalent hydrocarbon group of 3 to 20 carbon atoms or monovalent hydrocarbon group of 3 to 20 carbon atoms having a cyclic partial structure which may be substituted with a fluorine atom; and M+ represents an organic cation or a metal cation,
摘要翻译:提供了一种新型化合物,高分子化合物,抗蚀剂组合物,酸产生剂和由通式(1-1)表示的化合物形成抗蚀剂图案的方法:其中R 1和R 3各自独立地表示单键或 二价连接基团; A表示二价连接基团; R2和R4各自独立地表示羟基,可以具有取代基的烃基或由通式(1-an1),(1-an2)或(1-an3)表示的基团),条件是至少一个 R 2和R 4表示由通式(1-an1),(1-an2)或(1-an3)表示的基团。 n0优选为0或1,并且其中Y1表示单键或-SO2-; R5表示1〜10个碳原子的直链或支链一价烃基,3〜20个碳原子的环状一价烃基或具有可被氟原子取代的环状部分结构的3〜20个碳原子的一价烃基; M +表示有机阳离子或金属阳离子,
摘要:
A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid, and an acid generator component (B) which generates acid upon exposure, wherein the base component (A) contains a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-1). In formula (a5-1), R represents a hydrogen atom, an alkyl group or a halogenated alkyl group, X represents single bond or divalent linking group, W represents a cyclic alkylene group which may include an oxygen atom at arbitrary position, each of Ra and Rb independently represents a hydrogen atom or an alkyl group which may include an oxygen atom at arbitrary position, or alternatively, Ra and Rb may be bonded to each other to form a ring together with the nitrogen atom in the formula, and p represents integer of 1 to 3.
摘要:
According to an embodiment, a semiconductor device includes a semiconductor layer of a first conductive type, a base region of a second conductive type provided on the semiconductor layer and a first contact region of a second conductive type provided on the base region. The device includes a gate electrode provided in a trench piercing through the first contact region and the base region, and an interlayer insulating film provided on the gate electrode and containing a first conductive type impurity element. The device further includes a source region of a first conductive type provided between the interlayer insulating film and the first contact region, the source region being in contact with a side face of the interlayer insulating film and extending in the base region.
摘要:
First, on a semiconductor region of a first conductivity type, a trapping film is formed which stores information by accumulating charges. Then, the trapping film is formed with a plurality of openings, and impurity ions of a second conductivity type are implanted into the semiconductor region from the formed openings, thereby forming a plurality of diffused layers of the second conductivity type in portions of the semiconductor region located below the openings, respectively. An insulating film is formed to cover edges of the trapping film located toward the openings, and then the semiconductor region is subjected to a thermal process in an atmosphere containing oxygen to oxidize upper portions of the diffused layers. Thereby, insulating oxide films are formed in the upper portions of the diffused layers, respectively. Subsequently, a conductive film is formed over the trapping film including the edges thereof to form an electrode.