公开(公告)号：US10580618B2

公开(公告)日：2020-03-03

申请号：US16400733

申请日：2019-05-01

Applicant: Lam Research Corporation

Inventor： Juline Shoeb ,  Alex Paterson ,  Ying Wu

IPC: H01J37/32

Abstract: Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The RF signal is applied to a substrate support via a match. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. In addition, a direct current (DC) parameter is applied to the substrate support or another RF signal is applied to an upper electrode. The parameter and the frequency of the RF signal applied to the substrate support are simultaneously pulsed with the DC parameter or the RF signal applied to the upper electrode to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.

公开(公告)号：US20200020510A1

公开(公告)日：2020-01-16

申请号：US16035423

申请日：2018-07-13

Applicant: Lam Research Corporation

Inventor： Juline Shoeb ,  Alexander Miller Paterson ,  Ying Wu

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

Abstract: Systems and methods for generating monoenergetic ions are described. A duty cycle of a high parameter level of a multistate parameter signal is maintained and a difference between the high parameter level and a low parameter level of the multistate parameter signal is maintained to generate monoenergetic ions. The monoenergetic ions are used to etch a top material layer of a substrate at a rate that is self-limiting without substantially etching a bottom material layer of the substrate.

公开(公告)号：US10431434B2

公开(公告)日：2019-10-01

申请号：US15947629

申请日：2018-04-06

Applicant: Lam Research Corporation

Inventor： Maolin Long ,  Alex Paterson ,  Richard Marsh ,  Ying Wu

IPC: H01J37/32 ,  H01L21/683

Abstract: A plasma processing chamber and methods for operating the chamber are provided. An exemplary chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber. An inner side of dielectric window faces a plasma processing region that is above the electrostatic chuck and an outer side of the dielectric window is exterior to the plasma processing region. Inner and outer coils are disposed above the outer side of the dielectric window, and the inner and outer coils are connected to a first RF power source. A powered grid is disposed between the outer side of dielectric window and the inner and outer coils. The powered grid is connected to a second RF power source that is independent from the first RF power source.

公开(公告)号：US20190295821A1

公开(公告)日：2019-09-26

申请号：US16400733

申请日：2019-05-01

Applicant: Lam Research Corporation

Inventor： Juline Shoeb ,  Alex Paterson ,  Ying Wu

IPC: H01J37/32

Abstract: Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The RF signal is applied to a substrate support via a match. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. In addition, a direct current (DC) parameter is applied to the substrate support or another RF signal is applied to an upper electrode. The parameter and the frequency of the RF signal applied to the substrate support are simultaneously pulsed with the DC parameter or the RF signal applied to the upper electrode to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.

公开(公告)号：US09991128B2

公开(公告)日：2018-06-05

申请号：US15421189

申请日：2017-01-31

Applicant: Lam Research Corporation

Inventor： Zhongkui Tan ,  Yiting Zhang ,  Ying Wu ,  Qing Xu ,  Qian Fu ,  Yoko Yamaguchi ,  Lin Cui

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32 ,  C23C16/52 ,  H01L21/311 ,  C23C16/455 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/683

CPC classification number: H01L21/3065 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32119 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32926 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/3085 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/67069 ,  H01L21/67259 ,  H01L21/6833

Abstract: Methods and apparatus for etching substrates using self-limiting reactions based on removal energy thresholds determined by evaluating the material to be etched and the chemistries used to etch the material involve flow of continuous plasma. Process conditions permit controlled, self-limiting anisotropic etching without alternating between chemistries used to etch material on a substrate. A well-controlled etch front allows a synergistic effect of reactive radicals and inert ions to perform the etching, such that material is etched when the substrate is modified by reactive radicals and removed by inert ions, but not etched when material is modified by reactive radicals but no inert ions are present, or when inert ions are present but material is not modified by reactive radicals.

公开(公告)号：US20180097520A1

公开(公告)日：2018-04-05

申请号：US15683568

申请日：2017-08-22

Applicant: Lam Research Corporation

Inventor： Ying Wu

IPC: H03K19/003

CPC classification number: H03K19/00384 ,  H01L21/02252 ,  H01L21/02274 ,  H03K19/00361 ,  H04B1/7136 ,  H04B2001/1072

Abstract: Systems and methods for frequency and match tuning in one state S1 and frequency tuning in another state S2 are described. The systems and methods include determining one or more variables for the states S1 and S2, and tuning a frequency for the state S1 of a radio frequency (RF) generator based on the one or more variables.

公开(公告)号：US20170125216A1

公开(公告)日：2017-05-04

申请号：US14932416

申请日：2015-11-04

Applicant: Lam Research Corporation

Inventor： Zhongkui Tan ,  Qian Fu ,  Ying Wu ,  Qing Xu

IPC: H01J37/32 ,  H01L21/308 ,  H01L21/3065

CPC classification number: H01J37/32146 ,  H01J37/32165 ,  H01J37/32422 ,  H01J2237/0656 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/308

Abstract: For a first period of time, a higher radiofrequency power is applied to generate a plasma in exposure to a substrate, while applying low bias voltage at the substrate level. For a second period of time, a lower radiofrequency power is applied to generate the plasma, while applying high bias voltage at the substrate level. The first and second periods of time are repeated in an alternating and successive manner for an overall period of time necessary to produce a desired effect on the substrate. In some embodiments, the first period of time is shorter than the second period of time such that on a time-averaged basis the plasma has a greater ion density than radical density. In some embodiments, the first period of time is greater than the second period of time such that on a time-averaged basis the plasma has a lower ion density than radical density.

公开(公告)号：US20170040176A1

公开(公告)日：2017-02-09

申请号：US15139045

申请日：2016-04-26

Applicant: Lam Research Corporation

Inventor： Maolin Long ,  Zhongkui Tan ,  Ying Wu ,  Qian Fu ,  Alex Paterson ,  John Drewery

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32422 ,  H01L21/67069

Abstract: Systems and methods for reverse pulsing are described. One of the methods includes receiving a digital signal having a first state and a second state. The method further includes generating a transformer coupled plasma (TCP) radio frequency (RF) pulsed signal having a high state when the digital signal is in the first state and having a low state when the digital signal is in the second state. The method includes providing the TCP RF pulsed signal to one or more coils of a plasma chamber, generating a bias RF pulsed signal having a low state when the digital signal is in the first state and having a high state when the digital signal is in the second state, and providing the bias RF pulsed signal to a chuck of the plasma chamber.

Abstract translation: 描述了用于反向脉冲的系统和方法。 方法之一包括接收具有第一状态和第二状态的数字信号。 该方法还包括当数字信号处于第一状态时产生具有高状态的变压器耦合等离子体（TCP）射频（RF）脉冲信号，并且当数字信号处于第二状态时具有低状态。 该方法包括将TCP RF脉冲信号提供给等离子体室的一个或多个线圈，当数字信号处于第一状态时产生具有低状态的偏置RF脉冲信号，并且当数字信号处于 并且将偏压RF脉冲信号提供给等离子体室的卡盘。

公开(公告)号：US20160163569A1

公开(公告)日：2016-06-09

申请号：US15041947

申请日：2016-02-11

Applicant: Lam Research Corporation

Inventor： Maolin Long ,  Alex Paterson ,  Ricky Marsh ,  Ying Wu ,  John Drewery

IPC: H01L21/67 ,  H05K9/00

CPC classification number: H01L21/67069 ,  H01J37/32651 ,  H05K9/00

Abstract: A Faraday shield and a plasma processing chamber incorporating the Faraday shield is are provided. The plasma chamber includes an electrostatic chuck for receiving a substrate, a dielectric window connected to a top portion of the chamber, the dielectric window disposed over the electrostatic chuck, and a Faraday shield. The Faraday shield is disposed inside of the chamber and defined between the electrostatic chuck and the dielectric window. The Faraday shield includes an inner zone having an inner radius range that includes a first and second plurality of slots and an outer zone having an outer radius range that includes a third plurality of slots. The inner zone is adjacent to the outer zone. The Faraday shield also includes a band ring separating the inner zone and the outer zone, such that the first and second plurality of slots do not connect with the third plurality of slots.

公开(公告)号：US11798785B2

公开(公告)日：2023-10-24

申请号：US15701176

申请日：2017-09-11

Applicant: Lam Research Corporation

Inventor： Maolin Long ,  Zhongkui Tan ,  Ying Wu ,  Qian Fu ,  Alex Paterson ,  John Drewery

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01J37/321 ,  H01J37/32128 ,  H01J37/32146 ,  H01J37/32183 ,  H01J37/32577 ,  H01L21/3065 ,  H01L21/67069

Abstract: Systems and methods for reverse pulsing are described. One of the systems includes a controller, first and second source radio frequency (RF) generators, and first and second bias RF generators. The controller controls the first source RF generator to generate a first source pulsed signal, and controls the second source RF generator to generate a second source pulsed signal. The system includes a first match circuit that receives the first and second source pulsed signals and combines the first and second source pulsed signals. The controller controls the first bias RF generator to generate a first bias pulsed signal, and controls the second bias RF generator to generate a second bias pulsed signal. The system includes a second match circuit that receives the first and second bias pulsed signals and combines the first and second bias pulsed signals into a combined bias signal.