THIN FILM TRANSISTOR SUBSTRATE, AND DISPLAY PANEL AND DISPLAY DEVICE INCLUDING SAME

    公开(公告)号:US20180374876A1

    公开(公告)日:2018-12-27

    申请号:US16064885

    申请日:2016-10-14

    Abstract: A thin film transistor substrate according to an embodiment comprises: a support substrate; a bonding layer disposed on the support substrate; a thin film transistor disposed on the bonding layer, wherein the thin film transistor includes a channel layer containing a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed below the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode; and a pixel electrode disposed on the thin film transistor and electrically connected to the drain electrode of the thin film transistor. The thin film transistor substrate according to the embodiment, and a display panel and a display device including the same have an advantage of implementing high resolution and reproducing a soft moving image by providing a high carrier mobility.

    LIGHT EMITTING DEVICE PACKAGE AND LIGHTING APPARATUS INCLUDING THE PACKAGE

    公开(公告)号:US20170317253A1

    公开(公告)日:2017-11-02

    申请号:US15645788

    申请日:2017-07-10

    Abstract: Embodiments provide a light emitting device package including a substrate, a light emitting structure disposed under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes connected to the first and second conductive semiconductor layers, a first pad connected to the first electrodes in first-first through-holes penetrating the second conductive semiconductor layer and the active layer, and a first insulation layer disposed between the first pad and the second conductive semiconductor layer and between the first pad and the active layer to cover the first electrodes in a first-second through-hole, and a second pad connected to the second electrode through a second through-hole penetrating the first insulation layer and electrically spaced apart from the first pad. The second pad does not overlap the first insulation layer in the first-second through-hole in a thickness direction of the light emitting structure.

    LIGHT EMITTING APPARATUS
    45.
    发明申请
    LIGHT EMITTING APPARATUS 审中-公开
    发光装置

    公开(公告)号:US20150303351A1

    公开(公告)日:2015-10-22

    申请号:US14789808

    申请日:2015-07-01

    Abstract: A light emitting device including a contact layer, a blocking layer over the contact layer, a protection layer adjacent the blocking layer, a light emitter over the blocking layer, and an electrode layer coupled to the light emitter. The electrode layer overlaps the blocking layer and protection layer, and the blocking layer has an electrical conductivity that substantially blocks flow of current from the light emitter in a direction towards the contact layer. In addition, the protection layer may be conductive to allow current to flow to the light emitter or non-conductive to block current from flowing from the light emitter towards the contact layer.

    Abstract translation: 一种发光器件,包括接触层,接触层上的阻挡层,与阻挡层相邻的保护层,阻挡层上的发光体以及耦合到光发射器的电极层。 电极层与阻挡层和保护层重叠,并且阻挡层具有导电性,其基本上阻挡来自光发射器的电流沿朝向接触层的方向。 此外,保护层可以是导电的,以允许电流流到光发射器或不导电以阻止电流从发光体朝向接触层流动。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    48.
    发明申请

    公开(公告)号:US20130181239A1

    公开(公告)日:2013-07-18

    申请号:US13789444

    申请日:2013-03-07

    Inventor: Sang Youl LEE

    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first semiconductor layer, a second semiconductor layer, an active layer formed between the first semiconductor layer and the second semiconductor layer, a first reflective electrode on the first semiconductor layer to reflect incident light, and a second reflective electrode on the second semiconductor layer to reflect the incident light.

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