POWER SWITCH WITH AN OVERCURRENT PROTECTION DEVICE
    43.
    发明申请
    POWER SWITCH WITH AN OVERCURRENT PROTECTION DEVICE 有权
    具有过流保护装置的电源开关

    公开(公告)号:US20100007328A1

    公开(公告)日:2010-01-14

    申请号:US12499611

    申请日:2009-07-08

    IPC分类号: G01R19/00

    CPC分类号: H03K17/0822 G01R19/0092

    摘要: A power circuit comprises a power transistor for feeding a load current to a load, a measuring transistor for coupling out a measurement current dependent on the load current, at least two coupling transistors for dividing the measurement current into an internal measurement current and into an external measurement current, wherein the external measurement current can be fed to an external evaluation circuit, and the internal measurement current is fed to an internal evaluation circuit for evaluation. A third coupling transistor can be coupled to the measuring transistor if a measuring device determines a non-coupled state, and the third coupling transistor can be decoupled from the measuring transistor if the measuring device determines a coupled state. The measuring device determines the coupled state if the external evaluation device is coupled to the power circuit, and the measuring device determines a non-coupled state if the external evaluation device is not coupled to the power circuit.

    摘要翻译: 电源电路包括用于将负载电流馈送到负载的功率晶体管,用于耦合取决于负载电流的测量电流的测量晶体管,用于将测量电流分成内部测量电流的至少两个耦合晶体管和外部 测量电流,其中外部测量电流可以被馈送到外部评估电路,并且内部测量电流被馈送到用于评估的内部评估电路。 如果测量装置确定非耦合状态,则第三耦合晶体管可耦合到测量晶体管,并且如果测量装置确定耦合状态,则第三耦合晶体管可以与测量晶体管分离。 如果外部评估装置耦合到电源电路,则测量装置确定耦合状态,并且如果外部评估装置未耦合到电源电路,则测量装置确定非耦合状态。

    Circuit arrangement having a power transistor and a drive circuit for the power transistor
    45.
    发明授权
    Circuit arrangement having a power transistor and a drive circuit for the power transistor 有权
    具有功率晶体管和用于功率晶体管的驱动电路的电路装置

    公开(公告)号:US07408398B2

    公开(公告)日:2008-08-05

    申请号:US11109318

    申请日:2005-04-19

    申请人: Rainald Sander

    发明人: Rainald Sander

    IPC分类号: H03K17/687

    CPC分类号: H03K17/162

    摘要: Circuit arrangement having a power transistor and a drive circuit for the power transistorThe invention relates to a circuit arrangement having the following features: a power transistor (T) having a control terminal (G) and also a first and second load path terminal (D, S), the first load path terminal (D) of which is connected to a terminal for supply potential (V1) via an inductance-exhibiting line terminal (1) and the second load path terminal (S) of which serves for connecting a load (Z), and a first drive unit (10) for off-state driving of the power transistor (T) having an output (11) connected to the control terminal (G) of the power transistor (T1), and having a first current source arrangement (Iq1) connected between the output (AK) and a first drive potential (GND), in which case the first drive unit has a second current source arrangement (S2off, Iq2; S2off, Iq2, Iq21), which is connected to the output (AK) and which provides a current (I2; I2, I21) that is dependent on a temporal change in a terminal potential (Vd) at the first load path terminal (D) of the power transistor (T).

    摘要翻译: 具有功率晶体管和用于功率晶体管的驱动电路的电路装置技术领域本发明涉及具有以下特征的电路装置:具有控制端子(G)的功率晶体管(T)以及第一和第二负载路径端子(D ,S),其第一负载路径端子(D)经由电感显现线端子(1)连接到用于电源电位端子(V 1),并且其第二负载路径端子(S)用于连接 负载(Z)和用于断开状态驱动功率晶体管(T)的第一驱动单元(10),其具有连接到功率晶体管(T 1)的控制端子(G)的输出端(11),以及 具有连接在输出(AK)和第一驱动电位(GND)之间的第一电流源布置(Iq 1),在这种情况下,第一驱动单元具有第二电流源布置(S 2 off,Iq 2; S 2 off ,Iq 2,Iq 21),其连接到输出(AK)并且提供电流(I 2; I 2,I 21),其取决于功率晶体管(T)的第一负载路径端子(D)处的端子电位(Vd)的时间变化。

    Semiconductor component arrangement having a power transistor and a temperature measuring arrangement
    47.
    发明申请
    Semiconductor component arrangement having a power transistor and a temperature measuring arrangement 有权
    具有功率晶体管和温度测量装置的半导体元件布置

    公开(公告)号:US20070205464A1

    公开(公告)日:2007-09-06

    申请号:US11701248

    申请日:2007-02-01

    IPC分类号: H01L27/12

    摘要: A semiconductor component arrangement includes a power transistor and a temperature measurement circuit. The power transistor includes a gate electrode, a source zone, a drain zone and a body zone. The body zone is arranged in a first semiconductor zone of a first conduction type. The temperature measuring circuit comprises a temperature-dependent resistor and an evaluation circuit coupled to the temperature-dependent resistor. The resistor is formed by a portion of said first semiconductor zone.

    摘要翻译: 半导体元件布置包括功率晶体管和温度测量电路。 功率晶体管包括栅电极,源极区,漏区和体区。 身体区域布置在第一导电类型的第一半导体区域中。 温度测量电路包括温度依赖电阻器和耦合到温度依赖电阻器的评估电路。 电阻器由所述第一半导体区域的一部分形成。

    Power switching device
    48.
    发明授权
    Power switching device 有权
    电源开关装置

    公开(公告)号:US06853232B2

    公开(公告)日:2005-02-08

    申请号:US10446998

    申请日:2003-05-27

    CPC分类号: H03K17/0822 H03K17/166

    摘要: A power switching device has a power switching transistor connected in series in a load circuit with an inductive load portion and a commutation circuit. The commutation circuit is connected in parallel with the gate-drain or base-collector path of the power transistor and has a first Zener diode, which determines the commutation clamping voltage for switching on the power switching transistor during commutation, and an oppositely biased normal diode that is connected in series with the first Zener diode. The commutation circuit further has control elements in order to reduce, during a short time, the commutation clamping voltage at the beginning of each commutation cycle or after an adjustable delay from the beginning of each commutation cycle.

    摘要翻译: 功率开关器件具有串联连接在具有感性负载部分和换向电路的负载电路中的功率开关晶体管。 换向电路与功率晶体管的栅极 - 漏极或基极 - 集电极路并联连接,并具有第一齐纳二极管,其确定换向期间切换功率开关晶体管的换向钳位电压,以及相反偏置的正常二极管 它与第一个齐纳二极管串联连接。 换向电路还具有控制元件,以便在短时间内在每个换向循环开始时或在从每个换向循环开始之后的可调延迟之后减少换向钳位电压。

    Circuit configuration for detecting the current in a load transistor
    49.
    发明授权
    Circuit configuration for detecting the current in a load transistor 有权
    用于检测负载晶体管中的电流的电路配置

    公开(公告)号:US06737856B2

    公开(公告)日:2004-05-18

    申请号:US09943589

    申请日:2001-08-30

    申请人: Rainald Sander

    发明人: Rainald Sander

    IPC分类号: G01R3102

    摘要: The present invention relates to a circuit arrangement having a load transistor (T1) and a current sensing transistor (T2) coupled to the load transistor (T1), wherein a switch arrangement (S) having at least one first switch (S1; S1a, S1b) is connected downstream of the current sensing transistor (T2) in order to connect the current sensing transistor (T2) to a first or second evaluation circuit (BL1, BL2) depending on a control signal.

    摘要翻译: 本发明涉及一种具有耦合到负载晶体管(T1)的负载晶体管(T1)和电流感测晶体管(T2)的电路装置,其中开关装置(S)具有至少一个第一开关(S1; S1a, S1b)连接在电流感测晶体管(T2)的下游,以便根据控制信号将电流感测晶体管(T2)连接到第一或第二评估电路(BL1,BL2)。