Abstract:
An analog circuit including a pair of input nodes and a pair of output nodes is coupled to a mismatch reduction circuit including an input node, an output node, a phase controller that times even and odd phases, an input switch, and an output switch. The input switch electrically connects the mismatch reduction circuit input node to a first node of the pair of analog circuit input nodes during each even phase and to electrically connects the mismatch reduction circuit input node to a second node of the pair of analog circuit input nodes during each odd phase. The output switch electrically connects a first node of the pair of analog circuit output nodes to the mismatch reduction circuit output node during each even phase and electrically connects a second node of the pair of analog circuit output nodes to the mismatch reduction circuit output node during each odd phase.
Abstract:
An analog circuit including a pair of input nodes and a pair of output nodes is coupled to a mismatch reduction circuit including an input node, an output node, a phase controller that times even and odd phases, an input switch, and an output switch. The input switch electrically connects the mismatch reduction circuit input node to a first node of the pair of analog circuit input nodes during each even phase and to electrically connects the mismatch reduction circuit input node to a second node of the pair of analog circuit input nodes during each odd phase. The output switch electrically connects a first node of the pair of analog circuit output nodes to the mismatch reduction circuit output node during each even phase and electrically connects a second node of the pair of analog circuit output nodes to the mismatch reduction circuit output node during each odd phase.
Abstract:
An analog circuit including a pair of input nodes and a pair of output nodes is coupled to a mismatch reduction circuit including an input node, an output node, a phase controller that times even and odd phases, an input switch, and an output switch. The input switch electrically connects the mismatch reduction circuit input node to a first node of the pair of analog circuit input nodes during each even phase and to electrically connects the mismatch reduction circuit input node to a second node of the pair of analog circuit input nodes during each odd phase. The output switch electrically connects a first node of the pair of analog circuit output nodes to the mismatch reduction circuit output node during each even phase and electrically connects a second node of the pair of analog circuit output nodes to the mismatch reduction circuit output node during each odd phase.
Abstract:
Apparatus and methods for driving a signal are disclosed. An example apparatus includes a pre-driver circuit and a driver circuit. The pre-driver circuit includes a step-down transistor and the driver circuit includes a pull-down transistor configured to be coupled to a reference voltage. In a first mode, the step-down transistor is configured to reduce a voltage provided to the pull-down transistor to less than a supply voltage, and in a second mode, the step-down transistor configured to provide the voltage of the supply voltage to the pull-down transistor. The pre-driver circuit of the example signal driver circuit may further include a step-up transistor configured to increase a voltage provided to a pull-up transistor of the driver circuit to greater than the reference voltage, and in the second mode, the step-up transistor configured to provide the voltage of the reference voltage to the pull-up transistor.
Abstract:
Methods and systems for measuring the resistance of multiple memory elements are disclosed. The memory elements may be multi-bit memory and through precise measurement of resistance of the multi-bit memory elements, determination of how many and which memory elements fall into specific memory ranges can be accomplished. Furthermore, storage and/or display of this information may allow for the creation of resistance distribution histograms for modeling of one or more memory arrays.
Abstract:
A memory controller and a physical interface layer may accommodate multiple memory types. In some examples, the memory controller and/or PHY may include a register that includes operating parameters for multiple operating modes. Different operating modes may be compatible with different memory types. In some examples, the memory controller and physical interface may be included in a system for testing multiple memory types. The system may provide multiple interfaces for communicating with the memory. The different communication types may be used for performing different tests and/or simulating different types of devices that may utilize the memory.
Abstract:
Systems and method for sensing an accessed voltage value associated with a memory cell is described. In different embodiments, a memory array may include a different number of sense components. Moreover, each sense component may receive latching signals to latch the accessed voltage value of memory cells of the memory array based on different timings. For example, the memory array may latch digit line voltages of memory cells positioned farther from a respective word line driver at a later time based on a latching signal with a higher delay. Such memory arrays may include circuitry to receive and/or generate the delayed latching signals as well as selection circuitry for latching the digit line voltages based on a selected delayed latching signals.
Abstract:
An on-die controller can provide an error correction capability for data stored in an array of memory cells located on the same die as the on-die controller. The error correction capability provided by the on-die controller eliminates a need to transfer error correction code (ECC) data to an external controller that may have provided the error correction capability in lieu of the on-die controller, which can provide more channel bandwidth for other types of non-user data for further strengthening data reliability, security, integrity of the memory system.
Abstract:
Embodiments of the disclosure are drawn to apparatuses and methods for automatic soft post-package repair (ASPPR). A memory may receive a row address along with a signal indicating an ASPPR operation, such as a bad page flag being set. A word line engine generates a physical address based on the row address, and ASPPR registers stores the physical address. The time it takes from receiving the row address to storing the physical address may be within the timing of an access operation on the memory such as tRAS. The row address may specify a single page of information. If the bad page flag is set, then a subsequent PPR operation may blow fuses to encode the physical address stored in the ASPPR registers.
Abstract:
Apparatuses and methods for input receiver circuits and receiver masks for electronic memory are disclosed. Embodiments of the disclosure include memory receiver masks having shapes other than rectangular shapes. For example, a receiver mask according to some embodiments of the disclosure may have a hexagonal shape. Other shapes of receiver masks may also be included in other embodiments of the disclosure. Circuits, timing, and operating parameters for achieving non-rectangular and various shapes of receiver mask are described.