公开(公告)号：US07221002B2

公开(公告)日：2007-05-22

申请号：US10958911

申请日：2004-10-04

申请人： Haruhiko Okazaki ,  Hideto Sugawara

发明人： Haruhiko Okazaki ,  Hideto Sugawara

IPC分类号： H01L29/22

CPC分类号： H01L33/40 ,  H01L24/73 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

摘要翻译： 在蓝宝石衬底上形成InGaN有源层。 在InGaN有源层上形成p侧电极，以向该InGaN有源层提供电流。 p侧电极包括{圆周（1是用于与p-GaN层形成欧姆接触的Ni层，{圆周（2个具有防止杂质扩散的阻挡功能的Mo层，{周围（3个 Al层作为高反射电极{圆周（4个具有阻挡功能的Ti层）和{圆周（5个Au层，用于改善与引线框架上的基座的接触的Au层，具有该反射电极的p侧电极 五层结构同时实现欧姆接触和高反射率。

公开(公告)号：US07138664B2

公开(公告)日：2006-11-21

申请号：US10946668

申请日：2004-09-22

申请人： Haruhiko Okazaki ,  Hideto Sugawara

发明人： Haruhiko Okazaki ,  Hideto Sugawara

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L24/73 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

摘要翻译： 在蓝宝石衬底上形成InGaN有源层。 在InGaN有源层上形成p侧电极，以向该InGaN有源层提供电流。 p侧电极包括{圆周（1是用于与p-GaN层形成欧姆接触的Ni层，{圆周（2个具有防止杂质扩散的阻挡功能的Mo层，{周围（3个 Al层作为高反射电极{圆周（4个具有阻挡功能的Ti层）和{圆周（5个Au层，用于改善与引线框架上的基座的接触的Au层，具有该反射电极的p侧电极 五层结构同时实现欧姆接触和高反射率。

公开(公告)号：US07135714B2

公开(公告)日：2006-11-14

申请号：US10947631

申请日：2004-09-22

申请人： Haruhiko Okazaki ,  Hideto Sugawara

发明人： Haruhiko Okazaki ,  Hideto Sugawara

IPC分类号： H01L29/22

CPC分类号： H01L33/40 ,  H01L24/73 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

摘要翻译： 在蓝宝石衬底上形成InGaN有源层。 在InGaN有源层上形成p侧电极，以向该InGaN有源层提供电流。 p侧电极包括{圆周（1是用于与p-GaN层形成欧姆接触的Ni层，{圆周（2个具有防止杂质扩散的阻挡功能的Mo层，{周围（3个 Al层作为高反射电极{圆周（4个具有阻挡功能的Ti层）和{圆周（5个Au层，用于改善与引线框架上的基座的接触的Au层，具有该反射电极的p侧电极 五层结构同时实现欧姆接触和高反射率。

公开(公告)号：US20050037527A1

公开(公告)日：2005-02-17

申请号：US10945707

申请日：2004-09-21

申请人： Haruhiko Okazaki ,  Hideto Sugawara

发明人： Haruhiko Okazaki ,  Hideto Sugawara

IPC分类号： H01L21/28 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/40 ,  H01L21/00

CPC分类号： H01L33/40 ,  H01L24/73 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle over (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle over (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle over (3)} an Al layer as a high-reflection electrode, {circle over (4)} a Ti layer having a barrier function, and {circle over (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

公开(公告)号：US06590233B2

公开(公告)日：2003-07-08

申请号：US09942088

申请日：2001-08-28

申请人： Hideto Sugawara

发明人： Hideto Sugawara

IPC分类号： H01L3300

CPC分类号： H01L33/08 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2924/00014

摘要： The semiconductor light emitting device has the first semiconductor light emission element 13 for emitting color light in the first wave length range, the second semiconductor light emission element 14 for emitting color light in the second wave length range, the frame electrode 11 for mounting the first and second semiconductor light emission elements, and the package 19 for molding them together. The first semiconductor light emission element 13 is composed of an InGaAlP series material having an active layer 34 composed of a plurality of composite luminous layers 54, 55, 56, and 57 for emitting color light with a different wavelength. Luminescence spectra from the plurality of luminous layers are partially overlapped with each other. Each of the plurality of composite luminous layers 54, 55, 56, and 57 is further composed of a plurality of luminous layers 58 for emitting color light with substantially the same wavelength.

公开(公告)号：US06479836B1

公开(公告)日：2002-11-12

申请号：US09641215

申请日：2000-08-18

申请人： Nobuhiro Suzuki ,  Hideto Sugawara

发明人： Nobuhiro Suzuki ,  Hideto Sugawara

IPC分类号： H01L2906

CPC分类号： H01L33/14 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/34333

摘要： According to the invention, there is provided a semiconductor light emitting device comprising: a contact layer formed of a nitride semiconductor; and a p-side electrode provided in contact with a surface of the contact layer, the contact layer having a superlattice including an alternative stacked structure of first nitride semiconductor layers having a wider bandgap and second nitride semiconductor layers having a narrower bandgap, the first semiconductor layers being selectively doped with a p-type dopant.

摘要翻译： 根据本发明，提供了一种半导体发光器件，包括：由氮化物半导体形成的接触层; 以及设置成与所述接触层的表面接触的p侧电极，所述接触层具有超晶格，所述超晶格包括具有较宽带隙的第一氮化物半导体层和具有较窄带隙的第二氮化物半导体层的替代堆叠结构，所述第一半导体 层被选择性地掺杂有p型掺杂剂。

公开(公告)号：US5466950A

公开(公告)日：1995-11-14

申请号：US309491

申请日：1994-09-22

申请人： Hideto Sugawara ,  Kazuhiko Itaya

发明人： Hideto Sugawara ,  Kazuhiko Itaya

IPC分类号： H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/14 ,  H01L33/28 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/14 ,  H01L33/105

摘要： A semiconductor light emitting device. An emitting region has an active layer which emits short wavelength light and long wavelength light caused by inducing some amount of strain. A first reflective layer reflects the short wavelength light to the emitting region, and a second reflective layer reflects the long wavelength light to the emitting region and transmits the short wavelength light. The emitting region is between the first and the second reflective layers. Thereby the short wavelength light is emitted from the second reflective layer.

摘要翻译： 半导体发光器件。 发光区域具有通过引起一定量的应变而发出短波长光和长波长光的有源层。 第一反射层将短波长的光反射到发光区域，第二反射层将长波长的光反射到发光区域并透射短波长的光。 发光区域在第一和第二反射层之间。 由此，短波长的光从第二反射层发射。

公开(公告)号：US20120211784A1

公开(公告)日：2012-08-23

申请号：US13223853

申请日：2011-09-01

申请人： Hideto Sugawara

发明人： Hideto Sugawara

IPC分类号： H01L33/32 ,  H01L21/20 ,  H01L29/66

CPC分类号： H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/007

摘要： According to one embodiment, a nitride semiconductor stacked structure having a first surface includes a substrate, a first buffer layer, a first crystal layer, a second buffer layer and a second crystal layer. A step portion is provided in the substrate and includes an upper surface, a lower surface, and a side surface between the upper surface and the lower surface. The first buffer layer includes InsAltGa1-s-tN (0≦s≦0.05, 0≦t≦1) and covers the lower surface and the side surface. The first crystal layer is provided on the first buffer layer, includes InsAltGa1-s-tN (0≦s≦0.05, 0≦t≦0.05), and has an upper surface provided above the upper surface of the substrate. The second buffer layer includes InsAltGa1-s-tN (0≦s≦0.05, 0≦t≦1) and continuously covers the upper surface of the first crystal layer and the upper surface of the substrate. The second crystal layer covers the second buffer layer, includes InsAltGa1-s-tN (0≦s≦0.05, 0≦t≦0.05), and has the first surface.

摘要翻译： 根据一个实施例，具有第一表面的氮化物半导体层叠结构包括基板，第一缓冲层，第一晶体层，第二缓冲层和第二晶体层。 台阶部设置在基板中，并且包括上表面，下表面和上表面与下表面之间的侧表面。 第一缓冲层包括InsAltGa1-s-tN（0＆nlE; s＆nlE; 0.05,0＆nlE; t＆nlE; 1）并且覆盖下表面和侧表面。 第一晶体层设置在第一缓冲层上，包括InsAltGa1-s-tN（0＆nlE; s＆nlE; 0.05,0和nlE; t＆nlE; 0.05），并且在衬底的上表面上方设置上表面。 第二缓冲层包括InsAltGa1-s-tN（0＆nlE; s＆nlE; 0.05,0＆nlE; t＆nlE; 1），并连续地覆盖第一晶体层的上表面和衬底的上表面。 第二晶体层覆盖第二缓冲层，包括InsAltGa1-s-tN（0＆nlE; s＆nlE; 0.05,0和nlE; t＆nlE; 0.05），并具有第一表面。

公开(公告)号：US20110250714A1

公开(公告)日：2011-10-13

申请号：US13167052

申请日：2011-06-23

申请人： Hideto Sugawara

发明人： Hideto Sugawara

IPC分类号： H01L33/02

CPC分类号： H01L21/02639 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/3202 ,  H01S5/3203 ,  H01S2304/12

摘要： A nitride semiconductor includes: a substrate having a major surface including a first crystal polarity surface and a second crystal polarity surface different from the first crystal polarity surface; and a single polarity layer provided above the major surface and having a single crystal polarity.

摘要翻译： 氮化物半导体包括：具有包括第一晶体极性表面和与第一晶体极性表面不同的第二晶体极性表面的主表面的基板; 以及设置在主表面上并具有单晶极性的单极性层。

公开(公告)号：US07138665B2

公开(公告)日：2006-11-21

申请号：US10946787

申请日：2004-09-22

申请人： Haruhiko Okazaki ,  Hideto Sugawara

发明人： Haruhiko Okazaki ,  Hideto Sugawara

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L24/73 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.