摘要:
A process combines a high performance silicon pin diode (60) and other semiconductor devices such as transistors, resistors, and capacitors. The pin diode (60) is formed beneath an epitaxial layer (44) of the device at a depth that maximizes absorption of light having a wavelength greater than approximately 600 nanometers. Devices such as transistors are formed in the epitaxial layer (44). An integrated circuit has a substrate (41), an intrinsically doped layer (42), a buried layer (43), and an epitaxial layer (44). An isolation region (45) isolates an intrinsically doped region (46), a buried layer region (47), and the epitaxial layer region (48). The pin diode (32) has a substrate (41), an intrinsically doped region (46), and a buried layer region (47). A polysilicon region (62) provides a top side contact for the pin diode (60).
摘要:
A cellular mobile station including a modem processor and memory. The memory includes instructions for the modem processor to perform layer 1 processor operations, layer 2 processor operations, and layer 3 processor operations. The modem processor executes the instructions to perform processor operations for the cellular mobile station to communication data as per a cellular communications protocol. In one example, the mobile station includes different levels of memory to provide different deterministic access times.
摘要:
Well bias circuitry for selectively biasing the voltages of the well areas of an integrated circuit. In one embodiment, the well bias circuitry includes a switching cell located in a row of cells of the integrated circuit for selectively coupling a voltage supply line to a well bias line. The switching cell may include two level shifters, each for providing a voltage to a gate of a coupling transistor to make the coupling transistor non conductive in response to an enable signal. The switching cells may be sequentially coupled such that the coupling transistors of each of the switching cells are not made conductive at the same time so as to reduce inrush current due to changing the well bias from a well bias voltage to a supply voltage. In one example, the switching cells may include delay circuitry for delaying the change in state of the enable signal before being provided to the next switching cell.
摘要:
Supply voltages within a data processing system may be controlled by a voltage control module which can provide digital signals to a power management unit to cause changes in supply voltages without software intervention. For example, in one embodiment, a voltage control signal and a standby signal may be provided to control the supply voltages output by a voltage regulator within the power management unit. In one embodiment having multiple processors, a voltage control signal and a standby signal corresponding to each processor may be provided to the power management unit which has a voltage regulator supplying an independently controlled supply voltage to each processor. Alternatively, a voltage regulator, a voltage control signal, and a standby signal may be shared by multiple processors, where the voltage control module may ensure that the supply voltage is changed only when the change is appropriate for all processors sharing the same voltage regulator.
摘要:
Leakage current is eliminated in a memory array during a low power mode of a processing system having a processor that interfaces with the memory array. Because two power planes are created, the processor may continue executing instructions using a system memory while bypassing the memory array when the array is powered down. A switch selectively removes electrical connectivity to a supply voltage terminal in response to either processor-initiated control resulting from execution of an instruction or from a source originating in the system somewhere else than the processor. Upon restoration of power to the memory array, data may or may not need to be marked as unusable depending upon which of the two power planes supporting arrays to the memory array are located. Predetermined criteria may be used to control the timing of the restoration of power. Multiple arrays may be implemented to independently reduce leakage current.
摘要:
A differential charge and dump optoelectronic receiver for baseband digital optoelectronic data links is disclosed having a preamplifier and a voltage controlled current source that defines the tail current of a differential pair functioning as a two quadrant multiplier, and using capacitors as loads on the differential pair making said differential pair an integrator. The integrator provides a full differential output, part of which is fedback to control the gain of the preamplifier. In a preferred embodiment, one integrator pair is used to recover the data from a Manchester encoded data stream. In another preferred embodiment, two pairs of integrators are used for QPSK like codes.
摘要:
A projection system for a computer has an electronic slide (94) that is coupled to an electronic image signal (84) from a processor (82) in the computer (50). Projection optics (102) focus an optical image from the electronic slide (94) onto a screen (58).
摘要:
An optical hinge (20) provides one or more free space optical communication links through the hinge (17) of an instrument (10). The optical links include a transmitter (24) in one section (14) of the instrument (10) and a receiver (34) in the other section (16) of the instrument (10). An optical coupler (27) connects the transmitter (24) to the receiver (34) through a hinge (17).
摘要:
Binary current signals are differentiated to produce pulses indicative of the front and rear edges. The pulses are amplified and utilized in a latch to regenerate binary voltage signals which are amplified replicas of the input signals. Because of the input differentiator the sensitivity of the circuit remains high while the latched output makes the circuit burst mode ready.
摘要:
A plurality of electrical traces and a light emitting device having a working portion is disposed on an interconnect substrate. A first optical portion having a first surface, a second surface, and a tapered surface is disposed onto the interconnect substrate. The first surface of the optical portion covers the working portion of the light emitting device, a second surface of the first optical portion is positioned parallel to the working portion of the light emitting device, and the tapered surface extends from the second surface toward the working portion of the light emitting device for guiding light emitted from the working portion of the light emitting device to the second surface.