公开(公告)号：US20150295164A1

公开(公告)日：2015-10-15

申请号：US14249183

申请日：2014-04-09

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Sumeet C. Pandey

IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  H01L43/10

CPC classification number: H01L43/08 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic cell includes a magnetic region formed from a precursor magnetic material comprising a diffusive species and at least one other species. An amorphous region is proximate to the magnetic region and is formed from a precursor trap material comprising at least one attracter species having at least one trap site and a chemical affinity for the diffusive species. The diffusive species is transferred from the precursor magnetic material to the precursor trap material where it bonds to the at least one attracter species at the trap sites. The species of the enriched trap material may intermix such that the enriched trap material becomes or stays amorphous. The depleted magnetic material may then be crystallized through propagation from a neighboring crystalline material without interference from the amorphous, enriched trap material. This enables high tunnel magnetoresistance and high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

Abstract translation: 磁性电池包括由包含扩散物质和至少一种其它物质的前体磁性材料形成的磁性区域。 无定形区域靠近磁性区域并且由前体捕集材料形成，该前体捕集材料包含至少一种对扩散物质具有至少一个捕获位点和化学亲和力的吸附物种。 扩散物质从前体磁性材料转移到前体捕获材料，其中它们在捕获位点处与至少一种attracter物质结合。 富集陷阱材料的种类可以混合，使得富集陷阱材料变得或保持无定形。 耗尽的磁性材料然后可以通过相邻结晶材料的传播而结晶，而不受来自无定形富集陷阱材料的干扰。 这使得能够实现高隧道磁阻和高磁各向异性强度。 还公开了制造方法和半导体器件。

公开(公告)号：US12062688B2

公开(公告)日：2024-08-13

申请号：US17236865

申请日：2021-04-21

Applicant: Micron Technology, Inc.

Inventor： Richard Beeler ,  Matthew N. Rocklein ,  Timothy A. Quick ,  An-Jen B. Cheng ,  Sumeet C. Pandey

IPC: H10B12/00 ,  H01L49/02

CPC classification number: H01L28/75 ,  H01L28/40 ,  H01L28/55 ,  H01L28/56 ,  H10B12/30

Abstract: Some embodiments include dielectric material having a first region containing HfO and having a second region containing ZrO, where the chemical formulas indicate primary constituents rather than specific stoichiometries. The first region contains substantially no Zr, and the second region contains substantially no Hf. Some embodiments include capacitors having a first electrode, a second electrode, and a dielectric material between the first and second electrodes. The dielectric material includes one or more first regions and one or more second regions. The first region(s) contain(s) Hf and substantially no Zr. The second region(s) contain(s) Zr and substantially no Hf. Some embodiments include memory arrays.

公开(公告)号：US11651955B2

公开(公告)日：2023-05-16

申请号：US17215958

申请日：2021-03-29

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Brenda D. Kraus ,  Stefan Uhlenbrock ,  John A. Smythe ,  Timothy A. Quick

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/0217 ,  H01L21/0234 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02312

Abstract: Methods of forming silicon nitride. Silicon nitride is formed on a substrate by atomic layer deposition at a temperature of less than or equal to about 275° C. The as-formed silicon nitride is exposed to a plasma. The silicon nitride may be formed as a portion of silicon nitride and at least one other portion of silicon nitride. The portion of silicon nitride and the at least one other portion of silicon nitride may be exposed to a plasma treatment. Methods of forming a semiconductor structure are also disclosed, as are semiconductor structures and silicon precursors.

公开(公告)号：US11251363B2

公开(公告)日：2022-02-15

申请号：US16707958

申请日：2019-12-09

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Sumeet C. Pandey

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

Abstract: A magnetic cell includes a magnetic region formed from a precursor magnetic material comprising a diffusive species and at least one other species. An amorphous region is proximate to the magnetic region and is formed from a precursor trap material comprising at least one attractor species having at least one trap site and a chemical affinity for the diffusive species. The diffusive species is transferred from the precursor magnetic material to the precursor trap material where it bonds to the at least one attractor species at the trap sites. The species of the enriched trap material may intermix such that the enriched trap material becomes or stays amorphous. The depleted magnetic material may then be crystallized through propagation from a neighboring crystalline material without interference from the amorphous, enriched trap material. This enables high tunnel magnetoresistance and high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

公开(公告)号：US11152205B2

公开(公告)日：2021-10-19

申请号：US15913218

申请日：2018-03-06

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Sumeet C. Pandey ,  Stefan Uhlenbrock

IPC: H01L21/02 ,  C01B21/068 ,  H01L21/768 ,  C09D7/63 ,  C23C16/00 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455 ,  C07F7/02

Abstract: A silicon chalcogenate precursor comprising the chemical formula of Si(XR1)nR24-n, where X is sulfur, selenium, or tellurium, R1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4. Methods of forming the silicon chalcogenate precursor, methods of forming silicon nitride, and methods of forming a semiconductor structure are also disclosed.

公开(公告)号：US20210217611A1

公开(公告)日：2021-07-15

申请号：US17215958

申请日：2021-03-29

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Brenda D. Kraus ,  Stefan Uhlenbrock ,  John A. Smythe ,  Timothy A. Quick

IPC: H01L21/02

Abstract: Methods of forming silicon nitride. Silicon nitride is formed on a substrate by atomic layer deposition at a temperature of less than or equal to about 275° C. The as-formed silicon nitride is exposed to a plasma. The silicon nitride may be formed as a portion of silicon nitride and at least one other portion of silicon nitride. The portion of silicon nitride and the at least one other portion of silicon nitride may be exposed to a plasma treatment. Methods of forming a semiconductor structure are also disclosed, as are semiconductor structures and silicon precursors.

公开(公告)号：US20200350440A1

公开(公告)日：2020-11-05

申请号：US16401844

申请日：2019-05-02

Applicant: Micron Technology, Inc.

Inventor： Yunfei Gao ,  Kamal M. Karda ,  Stephen J. Kramer ,  Gurtej S. Sandhu ,  Sumeet C. Pandey ,  Haitao Liu

IPC: H01L29/786 ,  H01L29/16 ,  H01L51/05 ,  G11C13/00

Abstract: A transistor comprises a channel region between a source region and a drain region, a dielectric material adjacent to the channel region, an electrode adjacent to the dielectric material, and an electrolyte between the dielectric material and the electrode. Related semiconductor devices comprising at least one transistors, related electronic systems, and related methods are also disclosed.

公开(公告)号：US20190280192A1

公开(公告)日：2019-09-12

申请号：US16414537

申请日：2019-05-16

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey

IPC: H01L43/10 ,  H01L43/08 ,  H01L27/22 ,  H01L27/20

Abstract: Some embodiments include a magnetic tunnel junction device having a first magnetic electrode, a second magnetic electrode, and a tunnel insulator material between the first and second magnetic electrodes. A tungsten-containing material is directly against one of the magnetic electrodes. In some embodiments the tungsten-containing material may be in a first crystalline lattice arrangement, and the directly adjacent magnetic electrode may be in a second crystalline lattice arrangement different from said first crystalline lattice arrangement. In some embodiments the tungsten-containing material, the first magnetic electrode, the tunnel insulator material and the second magnetic electrode all comprise a common crystalline lattice arrangement.

公开(公告)号：US10355044B2

公开(公告)日：2019-07-16

申请号：US15162119

申请日：2016-05-23

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Sumeet C. Pandey

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

Abstract: A magnetic cell includes magnetic, secondary oxide, and getter seed regions. During formation, a diffusive species is transferred from a precursor magnetic material to the getter seed region, due to a chemical affinity elicited by a getter species. The depletion of the magnetic material enables crystallization of the depleted magnetic material through crystal structure propagation from a neighboring crystalline material, without interference from the now-enriched getter seed region. This promotes high tunnel magnetoresistance and high magnetic anisotropy strength. Also during formation, another diffusive species is transferred from a precursor oxide material to the getter seed region, due to a chemical affinity elicited by another getter species. The depletion of the oxide material enables lower electrical resistance and low damping in the cell structure. Methods of fabrication and semiconductor devices are also disclosed.

公开(公告)号：US20190189627A1

公开(公告)日：2019-06-20

申请号：US16284946

申请日：2019-02-25

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Lei Bi ,  Roy E. Meade ,  Qian Tao ,  Ashonita A. Chavan

IPC: H01L27/11507 ,  H01L29/78 ,  H01L29/66 ,  H01L27/1159 ,  H01L21/28 ,  H01L49/02 ,  H01L29/51

CPC classification number: H01L27/11507 ,  H01L21/28291 ,  H01L27/1159 ,  H01L28/55 ,  H01L29/516 ,  H01L29/6684 ,  H01L29/78391

Abstract: A ferroelectric memory device includes a plurality of memory cells. Each of the memory cells comprises at least one electrode and a ferroelectric crystalline material disposed proximate the at least one electrode. The ferroelectric crystalline material is polarizable by an electric field capable of being generated by electrically charging the at least one electrode. The ferroelectric crystalline material comprises a polar and chiral crystal structure without inversion symmetry through an inversion center. The ferroelectric crystalline material does not consist essentially of an oxide of at least one of hafnium (Hf) and zirconium (Zr).