公开(公告)号：US07884469B2

公开(公告)日：2011-02-08

申请号：US12474107

申请日：2009-05-28

申请人： Lei Shi ,  Ming Sun ,  Kai Liu

发明人： Lei Shi ,  Ming Sun ,  Kai Liu

IPC分类号： H01L23/34

CPC分类号： H01L23/49524 ,  H01L23/49562 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor package is disclosed. The package includes a leadframe having drain, source and gate leads, and a semiconductor die coupled to the leadframe, the semiconductor die having a plurality of metallized source contacts. A bridged source plate interconnection has a bridge portion, valley portions disposed on either side of the bridge portion, plane portions disposed on either side of the valley portions and the bridge portion, and a connection portion depending from one of the plane portions, the bridged source plate interconnection connecting the source lead with the plurality of metallized source contacts. The bridge portion is disposed in a plane above the plane of the valley portions while the plane portions are disposed in a plane intermediate the plane of the bridge portion and the plane of the valley portions.

摘要翻译： 公开了半导体封装。 封装包括具有漏极，源极和栅极引线的引线框架，以及耦合到引线框架的半导体管芯，半导体管芯具有多个金属化源极触点。 桥接源极板互连具有桥接部分，设置在桥接部分的任一侧上的谷部分，设置在谷部分和桥接部分两侧的平面部分以及从平面部分之一悬挂的连接部分， 将源极引线与多个金属化源触点连接的源极板互连。 桥面部分设置在平坦部分的平面上方的平面中，而平面部分设置在桥接部分的平面和谷部的平面之间的平面中。

公开(公告)号：US07811149B2

公开(公告)日：2010-10-12

申请号：US11490810

申请日：2006-07-21

申请人： Peng Liu ,  Kai-Li Jiang ,  Kai Liu ,  Shou-Shan Fan

发明人： Peng Liu ,  Kai-Li Jiang ,  Kai Liu ,  Shou-Shan Fan

IPC分类号： H01J19/24

CPC分类号： H01J9/025 ,  B82Y10/00 ,  H01J1/304 ,  H01J2201/30469

摘要： An exemplary method for fabricating a carbon nanotube-based field emission device is provided. A substrate is provided. A catalyst layer is formed on the substrate. A carbon nanotube array is grown from the catalyst layer. The carbon nanotube array includes a root portion and an opposite top portion respectively being in contact with and away from the catalyst layer. A cathode base with an adhesive layer formed thereon is provided. The top portion of the carbon nanotube array is immersed into the adhesive layer. The adhesive layer is solidified to embed the immersed top portion into the solidified adhesive layer. The root portion of the carbon nanotube array is exposed.

摘要翻译： 提供了一种用于制造基于碳纳米管的场致发射器件的示例性方法。 提供基板。 在基板上形成催化剂层。 从催化剂层生长碳纳米管阵列。 碳纳米管阵列包括分别与催化剂层接触并远离催化剂层的根部和相对的顶部。 提供其上形成有粘合剂层的阴极基体。 将碳纳米管阵列的顶部浸入粘合剂层中。 将粘合剂层固化以将浸入的顶部部分嵌入固化的粘合剂层中。 碳纳米管阵列的根部露出。

公开(公告)号：US07781265B2

公开(公告)日：2010-08-24

申请号：US12384100

申请日：2009-03-30

申请人： Xiaotian Zhang ,  Kai Liu ,  Ming Sun

发明人： Xiaotian Zhang ,  Kai Liu ,  Ming Sun

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L23/49562 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/4943 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A dual flat non-leaded semiconductor package is disclosed. A method of making a dual flat non-leaded semiconductor package includes forming a leadframe having a die bonding area with an integral drain lead, a gate lead bonding area and a source lead bonding area, the gate lead bonding area and a source lead bonding area being of increased area; bonding a die to the die bonding area; coupling a die source bonding area to the source lead bonding area; coupling a die gate bonding area to the gate lead bonding area; and partially encapsulating the die, the drain lead, the gate lead and the source lead to form the dual flat non-leaded semiconductor package.

摘要翻译： 公开了一种双平面无铅半导体封装。 制造双平面非铅半导体封装的方法包括：形成具有集成漏极引线，栅极引线接合区域和源极引线接合区域的管芯接合区域的引线框架，栅极引线接合区域和源极引线接合区域 面积增加; 将管芯结合到管芯接合区域; 将管芯源极接合区域耦合到所述源极引线接合区域; 将栅极接合区域耦合到栅极引线接合区域; 并且部分地封装裸片，漏极引线，栅极引线和源极引线，以形成双平面非引线半导体封装。

公开(公告)号：US20100170890A1

公开(公告)日：2010-07-08

申请号：US12661150

申请日：2010-03-11

申请人： Kai Liu ,  Chen Feng ,  Kai-Li Jiang ,  Jia-Ping Wang ,  Shou-Shan Fan ,  Chang-Hong Liu

发明人： Kai Liu ,  Chen Feng ,  Kai-Li Jiang ,  Jia-Ping Wang ,  Shou-Shan Fan ,  Chang-Hong Liu

IPC分类号： H05B3/02 ,  H05B3/10

CPC分类号： H05B3/145 ,  H05B3/265 ,  H05B2203/003 ,  H05B2203/005 ,  H05B2203/007 ,  H05B2203/011 ,  H05B2203/013 ,  H05B2203/017 ,  H05B2203/032 ,  H05B2203/034 ,  H05B2214/04 ,  Y10T29/49002 ,  Y10T29/49083

摘要： This disclosure is related to a heater. The heater includes a hollow supporter, at least one linear carbon nanotube composite structure and at least two electrodes connected to the at least one carbon nanotube composite structure. The at least one linear carbon nanotube composite structure is disposed on a surface of the hollow supporter. The at least one linear carbon nanotube composite structure includes a matrix and a linear carbon nanotube structure. The linear carbon nanotube structure includes a plurality of carbon nanotubes joined by van der Waals attractive force therebetween.

摘要翻译： 本公开涉及加热器。 加热器包括中空支撑体，至少一个线性碳纳米管复合结构和至少两个与至少一个碳纳米管复合结构连接的电极。 至少一个线性碳纳米管复合结构设置在中空支撑体的表面上。 至少一个线性碳纳米管复合结构包括基体和线性碳纳米管结构。 线性碳纳米管结构包括多个碳纳米管，它们之间由范德华力吸引力结合。

公开(公告)号：US07749477B2

公开(公告)日：2010-07-06

申请号：US12317148

申请日：2008-12-19

申请人： Kai-Li Jiang ,  Kai Liu ,  Shou-Shan Fan

发明人： Kai-Li Jiang ,  Kai Liu ,  Shou-Shan Fan

IPC分类号： D01F9/12 ,  C23C16/00 ,  C40B40/18

CPC分类号： C23C16/26 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/08 ,  C23C16/0281 ,  C23C16/45523 ,  D01F9/127 ,  Y10S977/742 ,  Y10S977/833

摘要： A carbon nanotube array includes a plurality of carbon nanotubes. Each of the carbon nanotubes has a plurality of line marks formed on each of the carbon nanotubes. The line marks transversely extend across the carbon nanotubes. The line marks of each of the carbon nanotubes are spaced apart from each other.

摘要翻译： 碳纳米管阵列包括多个碳纳米管。 每个碳纳米管具有形成在每个碳纳米管上的多个线标记。 线标横向延伸穿过碳纳米管。 每个碳纳米管的线标记彼此间隔开。

公开(公告)号：US20100147830A1

公开(公告)日：2010-06-17

申请号：US12658198

申请日：2010-02-04

申请人： Chang-Hong Liu ,  Jia-Ping Wang ,  Shou-Shan Fan ,  Kai-Li Jiang ,  Chen Feng ,  Kai Liu

发明人： Chang-Hong Liu ,  Jia-Ping Wang ,  Shou-Shan Fan ,  Kai-Li Jiang ,  Chen Feng ,  Kai Liu

IPC分类号： H05B3/02

CPC分类号： H05B3/145 ,  H05B3/265 ,  H05B2203/003 ,  H05B2203/005 ,  H05B2203/007 ,  H05B2203/011 ,  H05B2203/013 ,  H05B2203/017 ,  H05B2203/032 ,  H05B2203/034 ,  H05B2214/04 ,  Y10T29/49002 ,  Y10T29/49083

摘要： A linear heater includes a linear supporter, a heating element and at least two electrodes. The heating element is located on the linear supporter and includes a carbon nanotube composite structure. The carbon nanotube composite structure includes a matrix and at least one pressed carbon nanotube film. The pressed carbon nanotube film includes a plurality of carbon nanotubes. The angle between the carbon nanotubes and the surface of the heating element ranges from about 0 degrees to about 15 degrees. The at least two electrodes are electrically connected to the heating element.

摘要翻译： 线性加热器包括线性支撑件，加热元件和至少两个电极。 加热元件位于线性支撑体上并且包括碳纳米管复合结构。 碳纳米管复合结构包括基体和至少一个压制碳纳米管膜。 压制的碳纳米管膜包括多个碳纳米管。 碳纳米管与加热元件表面之间的角度为约0度至约15度。 至少两个电极电连接到加热元件。

公开(公告)号：US20100147829A1

公开(公告)日：2010-06-17

申请号：US12658193

申请日：2010-02-04

申请人： Kai Liu ,  Chen Feng ,  Kai-Li Jiang ,  Jia-Ping Wang ,  Shou-Shan Fan ,  Chang-Hong Liu

发明人： Kai Liu ,  Chen Feng ,  Kai-Li Jiang ,  Jia-Ping Wang ,  Shou-Shan Fan ,  Chang-Hong Liu

IPC分类号： H05B3/02 ,  H05B3/10

CPC分类号： H05B3/145 ,  H05B3/265 ,  H05B2203/003 ,  H05B2203/005 ,  H05B2203/007 ,  H05B2203/011 ,  H05B2203/013 ,  H05B2203/017 ,  H05B2203/032 ,  H05B2203/034 ,  H05B2214/04 ,  Y10T29/49002 ,  Y10T29/49083

摘要： A linear heater includes a heating element and at least two electrodes. The heating element includes at least one linear carbon nanotube composite structure. The at least one linear carbon nanotube composite structure includes a matrix and a linear carbon nanotube structure. The at least two electrodes are electrically connected to the heating element.

摘要翻译： 线性加热器包括加热元件和至少两个电极。 加热元件包括至少一个线性碳纳米管复合结构。 至少一个线性碳纳米管复合结构包括基体和线性碳纳米管结构。 至少两个电极电连接到加热元件。

公开(公告)号：US20100140738A1

公开(公告)日：2010-06-10

申请号：US12705790

申请日：2010-02-15

申请人： Kai Liu ,  Robert Charles Frye

发明人： Kai Liu ,  Robert Charles Frye

IPC分类号： H01L29/86 ,  H01L21/02

CPC分类号： H03H7/09 ,  H01F17/0006 ,  H01F2017/0046 ,  H01F2017/0073 ,  H03H7/1708 ,  H03H7/1775 ,  Y10T29/4902

摘要： A semiconductor device has a first coil structure formed over the substrate. A second coil structure is formed over the substrate adjacent to the first coil structure. A third coil structure is formed over the substrate adjacent to the second coil structure. The first and second coil structures are coupled by mutual inductance, and the second and third coil structures are coupled by mutual inductance. The first, second, and third coil structures each have a height greater than a skin current depth of the coil structure defined as a depth which current reduces to 1/(complex permittivity) of a surface current value. In the case of copper, the coil structures have a height greater than 5 micrometers.The first, second, and third coil structures are arranged in rounded or polygonal pattern horizontally across the substrate with a substantially flat vertical profile.

摘要翻译： 半导体器件具有形成在衬底上的第一线圈结构。 在与第一线圈结构相邻的衬底上形成第二线圈结构。 在与第二线圈结构相邻的衬底上形成第三线圈结构。 第一和第二线圈结构通过互感耦合，并且第二和第三线圈结构通过互感耦合。 第一，第二和第三线圈结构各自具有高于线圈结构的皮肤电流深度的高度，其被定义为电流减小到表面电流值的1 /（复数介电常数）的深度。 在铜的情况下，线圈结构的高度大于5微米。 第一，第二和第三线圈结构以基本上平坦的垂直轮廓横跨衬底水平布置成圆形或多边形图案。

公开(公告)号：US20100133674A1

公开(公告)日：2010-06-03

申请号：US12330381

申请日：2008-12-08

申请人： Francois Hebert ,  Kai Liu

发明人： Francois Hebert ,  Kai Liu

IPC分类号： H01L23/538 ,  H01L21/62

CPC分类号： H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49589 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099 ,  H01L2224/84

摘要： A top-side cooled compact semiconductor package with integrated bypass capacitor is disclosed. The top-side cooled compact semiconductor package includes a circuit substrate with terminal leads, numerous semiconductor dies bonded atop the circuit substrate, numerous elevation-adaptive interconnection plates for bonding and interconnecting top contact areas of the semiconductor dies with the circuit substrate, a first member of the elevation-adaptive interconnection plates has a first flat-top area and a second member of the elevation-adaptive interconnection plates has a second flat-top area in level with the first flat-top area, a bypass capacitor, having two capacitor terminals located at its ends, stacked atop the two interconnection plate members while being bonded thereto via the first flat-top area and the second flat-top area for a reduced interconnection parasitic impedance.

摘要翻译： 公开了具有集成旁路电容器的顶侧冷却紧凑型半导体封装。 顶侧冷却的紧凑型半导体封装包括具有端子引线的电路基板，接合在电路基板顶上的多个半导体管芯，用于将半导体管芯的顶部接触区域与电路基板接合和互连的许多仰角自适应互连板，第一构件 所述高度自适应互连板具有第一平顶区域，并且所述仰角自适应互连板的第二构件具有与所述第一平顶区域平齐的第二平顶区域，具有两个电容器端子的旁路电容器 位于其端部，并且通过第一平顶部区域和第二平顶部区域结合到两个互连板构件的顶部，以减少互连寄生阻抗。

公开(公告)号：US20100122980A1

公开(公告)日：2010-05-20

申请号：US12655507

申请日：2009-12-31

申请人： Jia-Ping Wang ,  Chang-Hong Liu ,  Shou-Shan Fan ,  Kai-Li Jiang ,  Chen Feng ,  Kai Liu

发明人： Jia-Ping Wang ,  Chang-Hong Liu ,  Shou-Shan Fan ,  Kai-Li Jiang ,  Chen Feng ,  Kai Liu

IPC分类号： H05B3/10

CPC分类号： H05B3/145 ,  H05B3/265 ,  H05B2203/003 ,  H05B2203/005 ,  H05B2203/007 ,  H05B2203/011 ,  H05B2203/013 ,  H05B2203/017 ,  H05B2203/032 ,  H05B2203/034 ,  H05B2214/04 ,  Y10T29/49002 ,  Y10T29/49083

摘要： This disclosure related to a heater. The heater includes a heating element and at least two electrodes connected to the heating element. The heating element includes a carbon nanotube composite structure. The carbon nanotube composite structure includes a matrix and at least one carbon nanotube structure. The at least one carbon nanotube structure includes a plurality of carbon nanotubes joined by van der Waals attractive force therebetween to obtain a free-standing carbon nanotube structure.

摘要翻译： 本公开涉及加热器。 加热器包括加热元件和连接至加热元件的至少两个电极。 加热元件包括碳纳米管复合结构。 碳纳米管复合结构包括基体和至少一个碳纳米管结构。 所述至少一个碳纳米管结构包括多个碳纳米管，其间通过范德华力吸引力结合，以获得独立的碳纳米管结构。