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41.发明申请SYSTEM AND METHOD FOR PRODUCING A MASS ANALYZED ION BEAM FOR HIGH THROUGHPUT OPERATION 审中-公开用于生产用于高通量运行的质量分析离子束的系统和方法公开(公告)号：US20130001414A1
公开(公告)日：2013-01-03
申请号：US13175404
申请日：2011-07-01
IPC分类号： H01J49/10
CPC分类号： H01J37/05 , H01J37/1472 , H01J37/3171 , H01J49/30 , H01J2237/055 , H01J2237/057
摘要： A system for producing a mass analyzed ion beam for implanting into a workpiece, includes an extraction plate having a set of apertures having a longitudinal axis of the aperture. The set of apertures are configured to extract ions from an ion source to form a plurality of beamlets. The system also includes an analyzing magnet region configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to the longitudinal axis of the apertures. The system further includes a mass analysis plate having a set of apertures configured to transmit first ion species having a first mass/charge ratio and to block second ion species having a second mass/charge ratio and a workpiece holder configured to move with respect to the mass analysis plate along the first direction.
摘要翻译： 用于生产用于植入工件的质量分析离子束的系统包括具有一组具有孔的纵向轴线的孔的抽出板。 该组孔被构造成从离子源提取离子以形成多个子束。 该系统还包括分析磁体区域，其被配置为提供磁场以沿着大致垂直于孔的纵向轴线的第一方向偏转子束中的离子。 该系统还包括质量分析板，该质量分析板具有一组孔口，其被配置为透射具有第一质量/带电比的第一离子种类并阻挡具有第二质量/加料比的第二离子种类和被配置为相对于 质量分析板沿第一方向。
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公开(公告)号：US20100148088A1
公开(公告)日：2010-06-17
申请号：US12708216
申请日：2010-02-18
IPC分类号： H01J27/02
CPC分类号： H01J27/08 , H01J27/16 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/061 , H01J2237/0817 , H01J2237/082
摘要： Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation, the apparatus including an ion source having a hot cathode and a high frequency plasma generator, wherein the ion source has multiple modes of operation.
摘要翻译： 公开了提供多模离子源的技术。 在一个特定的示例性实施例中，可以将技术实现为用于离子注入的装置，该装置包括具有热阴极和高频等离子体发生器的离子源，其中离子源具有多种操作模式。
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公开(公告)号：US20100084581A1
公开(公告)日：2010-04-08
申请号：US12244001
申请日：2008-10-02
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J37/1472 , H01J37/3007 , H01J2237/0041 , H01J2237/047 , H01J2237/24507 , H01J2237/24535 , H01J2237/30472 , H01J2237/30477 , H01J2237/31701 , H01J2237/31703
摘要： An apparatus and method for ion implantation that include destabilizing the ion beam as it passes through magnetic field, preferably a dipole magnetic field is disclosed. By introducing a bias voltage at certain points within the magnetic field, electrons from the plasma are drawn toward the magnet, thereby causing the ion beam to expand due to space charge effects. The bias voltage can be introduced into the magnet in a region where the magnetic field has only one component. Alternatively, the bias voltage can be in a region wherein the magnetic field has two components.
摘要翻译： 公开了一种用于离子注入的装置和方法，其包括在离子束通过磁场时使其稳定化，优选偶极磁场。 通过在磁场内的某些点引入偏置电压，来自等离子体的电子被吸向磁体，从而由于空间电荷效应而导致离子束膨胀。 可以在磁场仅具有一个分量的区域中将偏置电压引入到磁体中。 或者，偏置电压可以在其中磁场具有两个分量的区域中。
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公开(公告)号：US20080149845A1
公开(公告)日：2008-06-26
申请号：US11615317
申请日：2006-12-22
IPC分类号： H01J1/50
CPC分类号： H01J37/3171 , H01J37/05 , H01J2237/0475 , H01J2237/04922
摘要： This disclosure describes an ion implanter having a collimator magnet that is configured to shape an ion beam. A first deceleration stage is configured to manipulate energy of the ion beam shaped by the collimator magnet. A neutral filter magnet is configured to filter neutral atoms from the ion beam passing through the first deceleration stage.
摘要翻译： 本公开描述了具有准直器磁体的离子注入机，其被配置成使离子束成形。 第一减速阶段被配置为操纵由准直器磁体成形的离子束的能量。 中性滤波器磁体被配置为从穿过第一减速阶段的离子束中滤出中性原子。
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公开(公告)号：US07375355B2
公开(公告)日：2008-05-20
申请号：US11432977
申请日：2006-05-12
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/16 , H01J2237/0822 , H01J2237/20 , H01J2237/244 , H01L21/26513 , H01L21/26566 , H01L21/67213
摘要： An ion implantation cluster tool for implanting ions into a workpiece is provided, wherein a plurality of beamline assemblies having a respective plurality of ion beamlines associated therewith are positioned about a common process chamber. Each of the plurality of ion beamline assemblies are selectively isolated from the common process chamber, and the plurality of beamline intersect at a processing region of the process chamber. A scanning apparatus positioned within the common process chamber is operable to selectively translate a workpiece holder in one or more directions through each of the plurality of ion beamlines within the processing region, and a common dosimetry apparatus within the common process chamber is operable to measure one or more properties of each of the plurality of ion beamlines. A load lock chamber is operably coupled to the common process chamber for exchange of workpieces between the common process chamber and an external environment.
摘要翻译： 提供了用于将离子注入到工件中的离子注入簇工具，其中具有与其相关联的多个离子束线的多个束线组件围绕公共处理室定位。 多个离子束线组件中的每一个与公共处理室选择性地隔离，并且多个束线在处理室的处理区域相交。 定位在公共处理室内的扫描设备可操作以选择性地将工件保持器在一个或多个方向上通过处理区域内的多个离子束线中的每一个，并且公共处理室内的常见剂量测量装置可操作以测量一个 或更多的多个离子束线中的每一个的性质。 负载锁定室可操作地联接到公共处理室，用于在公共处理室和外部环境之间交换工件。
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公开(公告)号：US07078712B2
公开(公告)日：2006-07-18
申请号：US10803439
申请日：2004-03-18
IPC分类号： H01J37/304 , G01N21/00 , G01N21/88
CPC分类号： G01N21/94 , G01N21/47 , G01N21/9501 , G01N2015/0693 , G01N2021/4702 , G01N2021/8416 , G01N2201/06113 , H01J2237/0225 , H01J2237/31701
摘要： The present invention is directed to in-situ detection of particles and other such features in an ion implantation system during implantation operations to avoid such additional monitoring tool steps otherwise expended before and/or after implantation, for example. One or more such systems are revealed for detecting scattered light from particles on one or more semiconductor wafers illuminated by a light source (e.g., laser beam). The system comprises an ion implanter having a laser for illumination of a spot on the wafer and a pair of detectors (e.g., PMT or photodiode) rotationally opposite from the ion implantation operations. A wafer transport holds a wafer or wafers for translational scanning under the fixed laser spot. A computer analyzes the intensity of the scattered light detected from the illuminated wafer (workpiece), and may also map the light detected to a unique position. For example, particles or other such contaminates may be identified on wafers during the implantation process before additional time and resources are consumed, and aid in determining the sources of such contaminates. Further, threshold analysis of the quantity or size of such particles, for example, may provide a system interlock for shutdown or feedback control.
摘要翻译： 本发明涉及在植入操作期间在离子注入系统中的颗粒和其它这些特征的原位检测，以避免例如植入之前和/或之后另外消耗的另外的监测工具步骤。 一个或多个这样的系统被揭示用于检测由光源（例如激光束）照射的一个或多个半导体晶片上的颗粒的散射光。 该系统包括具有用于照射晶片上的点的激光器和与离子注入操作旋转相反的一对检测器（例如，PMT或光电二极管）的离子注入机。 晶片传输器在固定的激光光斑下保持用于平移扫描的晶片或晶片。 计算机分析从照射的晶片（工件）检测到的散射光的强度，并且还可以将检测到的光映射到唯一的位置。 例如，在额外的时间和资源被消耗之前，可以在植入过程期间在晶片上识别颗粒或其它这样的污染物，并且有助于确定这些污染物的来源。 此外，例如，这种颗粒的数量或尺寸的阈值分析可以提供用于关闭或反馈控制的系统互锁。
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47.发明授权Thin magnetron structures for plasma generation in ion implantation systems 失效用于离子注入系统中等离子体生成的薄磁控管结构公开(公告)号：US06879109B2
公开(公告)日：2005-04-12
申请号：US10600775
申请日：2003-06-20
IPC分类号： H01J37/317 , H05H1/24
CPC分类号： H01J37/32082 , H01J37/3171 , H01J37/3266 , H01J2237/0041
摘要： A plasma generator for space charge neutralization of an ion beam is disclosed and resides within an ion implantation system operable to generate an ion beam and direct the ion beam along a beamline path. The plasma generator comprises an electric field generation system operable to generate an electric field in a portion of the beamline path, and a magnetic field generation system operable to generate a magnetic field in the portion of the beamline path, wherein the magnetic field is perpendicular to the electric field. The plasma generator further comprises a gas source operable to introduce a gas in a region occupied by the electric field and the magnetic field. Electrons in the region move in the region due to the electric field and the magnetic field, respectively, and at least some of the electrons collide with the gas in the region to ionize a portion of the gas, thereby generating a plasma in the region.
摘要翻译： 公开了一种用于离子束的空间电荷中和的等离子体发生器，并且位于离子注入系统内，可操作以产生离子束并沿着束线路径引导离子束。 等离子体发生器包括可操作以在束线路径的一部分中产生电场的电场产生系统，以及可操作以在束线路径的该部分中产生磁场的磁场产生系统，其中磁场垂直于 电场。 等离子体发生器还包括可操作以在由电场和磁场占据的区域中引入气体的气体源。 该区域中的电子分别由于电场和磁场而在该区域内移动，并且至少一些电子与该区域中的气体碰撞以使一部分气体离子化，从而在该区域中产生等离子体。
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公开(公告)号：US06664548B2
公开(公告)日：2003-12-16
申请号：US10209397
申请日：2002-07-31
IPC分类号： H01J2706
CPC分类号： H01J37/08 , H01J2237/0815 , H01J2237/083 , H01J2237/0835 , H01J2237/31701
摘要： An ion source is disclosed having an elongated slit for providing a ribbon ion beam for use in an ion implantation system. The source comprises a coaxial inductive coupling antenna for RF excitation of plasma within a cylindrical source housing, as well as circumferential magnets disposed within the housing for generating azimuthal multi-cusped magnetic fields for plasma confinement. Also disclosed is a liner for the housing interior providing thermal barrier between the plasma and the outer housing wall so as to mitigate or reduce condensation within the plasma confinement chamber.
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公开(公告)号：US06664547B2
公开(公告)日：2003-12-16
申请号：US10136047
申请日：2002-05-01
申请人： Victor M. Benveniste
发明人： Victor M. Benveniste
IPC分类号： H01J2700
CPC分类号： H01J37/08 , H01J2237/0835 , H01J2237/31701
摘要： An ion source is disclosed for ion implantation applications, having control apparatus for selectively adjusting a density profile associated with an elongated ion beam being extracted from a plasma confinement chamber. The control apparatus comprises a plurality of magnet pairs proximate an elongated extraction exit through which a ribbon beam is extracted from the ion source, with the magnet pairs individually comprising upper and lower electro-magnets disposed above and below the extraction exit opening to provide adjustable magnetic fields in a pre-extraction region so as to adjust the density profile of an extracted ribbon beam.
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公开(公告)号：US06207963B1
公开(公告)日：2001-03-27
申请号：US09219669
申请日：1998-12-23
申请人： Victor M. Benveniste
发明人： Victor M. Benveniste
IPC分类号： H01J37317
CPC分类号： C23C14/48 , H01J37/1475 , H01J37/3171
摘要： Method and apparatus for use in treating a workpiece implantation surface by causing ions to impact the workpiece implantation surface. Ions emitted by an ion source are accelerated away from the ion source to form an ion beam. A magnetic field is created for intercepting the ions in the ion beam exiting the source and selectively deflectiing the ions away from an initial trajectory in a generally arcuate scanning motion. The magnetic field is created by synchronized energization of first and second current carrying coils located along an inner surface of a ferromagnetic support. The beam is deflected away from the initial trajectory by a controlled amount in a time varying manner to cause the beam to sweep through an arcuate path and impact the workpiece.
摘要翻译： 用于通过使离子冲击工件注入表面来处理工件注入表面的方法和装置。 由离子源发射的离子被离子源加速离子以形成离子束。 产生磁场，用于截取离开源的离子束中的离子，并且以大致弧形的扫描运动选择性地将离子偏离初始轨迹。 通过沿着铁磁性支撑件的内表面定位的第一和第二载流线圈的同步通电来产生磁场。 光束以时间变化的方式从初始轨迹偏转受控量，以使光束扫过弧形路径并撞击工件。
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