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    Thin film transistor
    41.
    发明授权
    Thin film transistor 有权
    薄膜晶体管

    公开(公告)号：US08154011B2

    公开(公告)日：2012-04-10

    申请号：US12384281

    申请日：2009-04-02

    申请人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    发明人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC分类号： H01L29/06

    CPC分类号： H01L51/0558 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/102 ,  Y10S977/762

    摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, a channel and a gate electrode. The drain electrode is spaced from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The channel includes a plurality of carbon nanotube wires, one end of each carbon nanotube wire is connected to the source electrode, and opposite end of each the carbon nanotube wire is connected to the drain electrode.

    摘要翻译： 薄膜晶体管包括源电极，漏电极，半导体层，沟道和栅电极。 漏电极与源电极间隔开。 栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。 通道包括多个碳纳米管线，每个碳纳米管线的一端连接到源电极，并且每个碳纳米管线的相对端连接到漏电极。

    Thin film transistor having a plurality of carbon nanotubes
    42.
    发明授权
    Thin film transistor having a plurality of carbon nanotubes 有权
    具有多个碳纳米管的薄膜晶体管

    公开(公告)号：US08101953B2

    公开(公告)日：2012-01-24

    申请号：US12384329

    申请日：2009-04-02

    申请人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    发明人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC分类号： H01L29/10 ,  H01L29/76 ,  H01L31/036 ,  H01L31/112 ,  H01L27/108 ,  H01L29/04 ,  H01L29/12 ,  H01L31/0376 ,  H01L31/20

    CPC分类号： H01L51/0012 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0562 ,  Y10S977/723 ,  Y10S977/842 ,  Y10S977/938

    摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer includes at least two stacked carbon nanotube films. Each carbon nanotube film includes an amount of carbon nanotubes. At least a part of the carbon nanotubes of each carbon nanotube film are aligned along a direction from the source electrode to the drain electrode.

    摘要翻译： 薄膜晶体管包括源电极，漏电极，半导体层和栅电极。 漏电极与源电极间隔开。 半导体层连接到源电极和漏电极。 栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。 半导电层包括至少两个堆叠的碳纳米管膜。 每个碳纳米管膜包括一定量的碳纳米管。 每个碳纳米管膜的碳纳米管的至少一部分沿着从源电极到漏电极的方向排列。

    Method for fabricating light emitting diode
    43.
    发明授权
    Method for fabricating light emitting diode 有权
    制造发光二极管的方法

    公开(公告)号：US08021902B2

    公开(公告)日：2011-09-20

    申请号：US12584386

    申请日：2009-09-03

    申请人： Qun-Qing Li ,  Kai-Li Jiang ,  Shou-Shan Fan

    发明人： Qun-Qing Li ,  Kai-Li Jiang ,  Shou-Shan Fan

    IPC分类号： H01L21/00

    CPC分类号： H01L33/40 ,  B82Y20/00 ,  B82Y30/00 ,  Y10S977/742

    摘要： A method of fabricating a light emitting diode includes the following steps. A substrate is provided and a first semiconductor layer, an active layer, and a second semiconductor layer are placed on the substrate. A carbon nanotube structure is provided and the carbon nanotube structure is lie on the second semiconductor layer. A first electrode is formed on the carbon nanotube structure. A portion of the first semiconductor layer is exposed and a second electrode is formed on the exposed portion of the first semiconductor layer to obtain the light emitting diode.

    摘要翻译： 制造发光二极管的方法包括以下步骤。 提供衬底，并且在衬底上放置第一半导体层，有源层和第二半导体层。 提供碳纳米管结构，碳纳米管结构位于第二半导体层上。 在碳纳米管结构上形成第一电极。 暴露第一半导体层的一部分，并且在第一半导体层的暴露部分上形成第二电极以获得发光二极管。

    Method for fabricating light emitting diode
    44.
    发明申请
    Method for fabricating light emitting diode 有权
    制造发光二极管的方法

    公开(公告)号：US20100221852A1

    公开(公告)日：2010-09-02

    申请号：US12584386

    申请日：2009-09-03

    申请人： Qun-Qing Li ,  Kai-Li Jiang ,  Shou-Shan Fan

    发明人： Qun-Qing Li ,  Kai-Li Jiang ,  Shou-Shan Fan

    IPC分类号： H01L21/28

    CPC分类号： H01L33/40 ,  B82Y20/00 ,  B82Y30/00 ,  Y10S977/742

    摘要： A method of fabricating a light emitting diode includes the following steps. A substrate is provided and a first semiconductor layer, an active layer, and a second semiconductor layer are placed on the substrate. A carbon nanotube structure is provided and the carbon nanotube structure is lie on the second semiconductor layer. A first electrode is formed on the carbon nanotube structure. A portion of the first semiconductor layer is exposed and a second electrode is formed on the exposed portion of the first semiconductor layer to obtain the light emitting diode.

    摘要翻译： 制造发光二极管的方法包括以下步骤。 提供衬底，并且在衬底上放置第一半导体层，有源层和第二半导体层。 提供碳纳米管结构，碳纳米管结构位于第二半导体层上。 在碳纳米管结构上形成第一电极。 暴露第一半导体层的一部分，并且在第一半导体层的暴露部分上形成第二电极以获得发光二极管。

    Thin film transistor
    46.
    发明申请
    Thin film transistor 有权
    薄膜晶体管

    公开(公告)号：US20090283752A1

    公开(公告)日：2009-11-19

    申请号：US12384281

    申请日：2009-04-02

    申请人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    发明人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC分类号： H01L29/12 ,  H01L29/786

    CPC分类号： H01L51/0558 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/102 ,  Y10S977/762

    摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, a channel and a gate electrode. The drain electrode is spaced from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The channel includes a plurality of carbon nanotube wires, one end of each carbon nanotube wire is connected to the source electrode, and opposite end of each the carbon nanotube wire is connected to the drain electrode.

    摘要翻译： 薄膜晶体管包括源电极，漏电极，半导体层，沟道和栅电极。 漏电极与源电极间隔开。 栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。 通道包括多个碳纳米管线，每个碳纳米管线的一端连接到源电极，并且每个碳纳米管线的相对端连接到漏电极。

    Method of manufacturing silicon nano-structure
    47.
    发明申请
    Method of manufacturing silicon nano-structure 有权
    硅纳米结构的制造方法

    公开(公告)号：US20090253248A1

    公开(公告)日：2009-10-08

    申请号：US12291301

    申请日：2008-11-06

    申请人： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    发明人： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC分类号： H01L21/20

    CPC分类号： C30B29/60 ,  B82Y10/00 ,  B82Y30/00 ,  C30B29/06 ,  Y10S438/903 ,  Y10S977/855 ,  Y10S977/857

    摘要： A method for making silicon nano-structure, the method includes the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of catalyst separately into the reacting room. Thirdly, introducing a silicon-containing gas and hydrogen gas into the reacting room. Lastly, heating the reacting room to a temperature of 500˜1100° C.

    摘要翻译： 一种制造硅纳米结构的方法，该方法包括以下步骤。 首先，提供增长的衬底和生长装置，该生长装置包括加热装置和反应室。 其次，将生长的基材和一定数量的催化剂分别置于反应室中。 第三，将含硅气体和氢气引入反应室。 最后，将反应室加热至500〜1100℃

    Method for making nano-scale film
    48.
    发明申请
    Method for making nano-scale film 有权
    制作纳米级膜的方法

    公开(公告)号：US20080157435A1

    公开(公告)日：2008-07-03

    申请号：US11982487

    申请日：2007-11-02

    申请人： Li-Na Zhang ,  Yao-Jun Zhang ,  Yi Ren ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    发明人： Li-Na Zhang ,  Yao-Jun Zhang ,  Yi Ren ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC分类号： B29C39/02 ,  B29C39/00

    CPC分类号： B29C41/12

    摘要： A method for making a nano-scale film includes the steps of: (a) providing a suspension including an organic solvent and a number of nano-scale particles dispersed therein; (b) dropping/releasing the suspension into a liquid having a specific gravity greater than that of the nano-scale particles; and (c) forming a uniform film of nano-scale particles on the surface of the liquid.

    摘要翻译： 制备纳米级膜的方法包括以下步骤：（a）提供包含分散在其中的有机溶剂和许多纳米级颗粒的悬浮液; （b）将悬浮液滴入/释放到比重大于纳米级颗粒的液体的液体中; 和（c）在液体表面上形成均匀的纳米级颗粒膜。

    Optical polarizer and method for fabricating such optical polarizer
    49.
    发明授权
    Optical polarizer and method for fabricating such optical polarizer 有权
    光偏振器及其制造方法

    公开(公告)号：US07054064B2

    公开(公告)日：2006-05-30

    申请号：US10335282

    申请日：2002-12-31

    申请人： Kai-Li Jiang ,  Shou-Shan Fan ,  Qun-Qing Li

    发明人： Kai-Li Jiang ,  Shou-Shan Fan ,  Qun-Qing Li

    IPC分类号： G02B5/30 ,  D01F9/12 ,  C01B31/02 ,  B82B1/00 ,  B82B3/00

    CPC分类号： B82Y20/00 ,  G02B5/3058 ,  G02B5/3075 ,  Y10S359/90 ,  Y10T428/24132 ,  Y10T428/2918 ,  Y10T428/30

    摘要： The present invention provides an optical polarizer and a method of fabricating such an optical polarizer. The optical polarizer includes a support member and an optical polarizing film supported by the support member. The optical polarizing film includes a number of carbon nanotubes. The carbon nanotubes are compactly aligned with and parallel to each other. The optical polarizing film constructed with carbon nanotubes can work at high-temperature and in moist environments and has excellent abrasion resistance properties. Furthermore, a diameter of a carbon nanotube is only about 0.4˜30 nm, so the polarizing ability of the optical polarizer can extend into the UV region. The degree of polarization in the UV region is 0.92.

    摘要翻译： 本发明提供一种光学偏振器及其制造方法。 光学偏振器包括由支撑构件支撑的支撑构件和光学偏振膜。 光学偏振膜包括多个碳纳米管。 碳纳米管彼此紧密对准并平行。 用碳纳米管构成的光学偏光膜可以在高温和潮湿环境下工作，具有优异的耐磨性。 此外，碳纳米管的直径仅为约0.4〜30nm，因此光学偏振器的偏振能力可以延伸到UV区域。 UV区域的极化度为0.92。