公开(公告)号：US20140361848A1

公开(公告)日：2014-12-11

申请号：US14298829

申请日：2014-06-06

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Baker Scott

IPC: H03H7/46

CPC classification number: H03H7/465 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/1775 ,  H03H7/46 ,  H03H7/463 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04 ,  H04B1/1027 ,  H04B1/18

Abstract: RF filter structures are disclosed that may have multiple filter paths, which are provided by weakly coupled resonators. The filter paths may be interconnected so that additional filter paths may be realized between input and output terminals of the RF filter structures. In this manner, the weakly coupled resonators from the filter paths may be arranged in a matrix. In one embodiment, an RF filter structure includes a first filter path and a second filter path. The first filter path includes (at least) a first pair of weakly coupled resonators while a second filter path that includes (at least) a second pair of weakly coupled resonators. To interconnect the first filter path and the second filter path, a cross-coupling capacitive structure is electrically connected between the first filter path and the second filter path. As such, an additional filtering path may be realized through the interconnection provided by the cross-coupling capacitive structure.

Abstract translation: 公开了可以具有由弱耦合谐振器提供的多个滤波器路径的RF滤波器结构。 滤波器路径可以互连，使得可以在RF滤波器结构的输入和输出端之间实现附加的滤波器路径。 以这种方式，来自滤波器路径的弱耦合谐振器可以被布置成矩阵。 在一个实施例中，RF滤波器结构包括第一滤波器路径和第二滤波器路径。 第一滤波器路径包括（至少）第一对弱耦合谐振器，而第二滤波器路径包括（至少）第二对弱耦合谐振器对。 为了互连第一滤波器路径和第二滤波器路径，交叉耦合电容结构电连接在第一滤波器路径和第二滤波器路径之间。 因此，可以通过由交叉耦合电容结构提供的互连来实现附加的滤波路径。

公开(公告)号：US10224891B2

公开(公告)日：2019-03-05

申请号：US14568495

申请日：2014-12-12

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Baker Scott ,  Dirk Robert Walter Leipold

IPC: H04B1/04 ,  H03G3/30 ,  H03F1/26 ,  H03F1/32 ,  H03F3/193

Abstract: RF PA circuitry includes an RF signal path, an adjustable component, a distortion compensation feedback loop including distortion compensation circuitry, RF noise filtering circuitry, and baseband noise filtering circuitry. The adjustable component is located in the RF signal path. The distortion compensation feedback loop is coupled in parallel with at least a portion of the RF signal path, and includes the distortion compensation circuitry. Further, the distortion compensation circuitry is configured to adjust one or more parameters of the adjustable component via a component adjustment signal based on a measurement of a signal at an output of the RF signal path. The RF noise filtering circuitry is coupled in the RF signal path and configured to attenuate noise therein. The baseband noise filtering circuitry is coupled between the distortion compensation circuitry and the adjustable component and configured to attenuate noise in the component adjustment signal.

公开(公告)号：US10062629B2

公开(公告)日：2018-08-28

申请号：US14931720

申请日：2015-11-03

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Marcus Granger-Jones ,  Baker Scott

IPC: H03H7/38 ,  H01L23/31 ,  H01L21/304 ,  H01L21/02 ,  H01L21/683 ,  H01L23/29 ,  H01L23/373 ,  H01L23/00 ,  H05K1/02 ,  H05K1/18 ,  H01Q1/50 ,  H01L23/36 ,  H01L21/56 ,  H01L23/20 ,  H01L23/367 ,  H01L21/306 ,  H01L23/522 ,  H01L49/02

CPC classification number: H01L23/315 ,  H01L21/02266 ,  H01L21/02282 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/20 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3731 ,  H01L23/3737 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/562 ,  H01L24/17 ,  H01L28/10 ,  H01L28/20 ,  H01L28/40 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/0002 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01Q1/50 ,  H05K1/0203 ,  H05K1/181 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014

Abstract: Antenna aperture tuning circuitry includes a first signal path and a second signal path coupled in parallel between an antenna radiating element and ground. A first LC resonator and a second LC resonator are each coupled between the first signal path and ground. The first LC resonator and the second LC resonator are electromagnetically coupled such that a coupling factor between the first LC resonator and the second LC resonator is between about 1.0% and 40.0%. A third LC resonator and a fourth LC resonator are each coupled between the second signal path and ground. The third LC resonator and the fourth LC resonator are electromagnetically coupled such that a coupling factor between the third LC resonator and the fourth LC resonator is between about 1.0% and 40.0%.

公开(公告)号：US10028390B2

公开(公告)日：2018-07-17

申请号：US14872910

申请日：2015-10-01

Applicant: RF Micro Devices, Inc.

Inventor： Julio C. Costa ,  George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H01L21/50 ,  H01L21/56 ,  H01L23/48 ,  H05K3/30 ,  H05K3/28 ,  H01F27/24 ,  H01L23/31 ,  H01L23/36 ,  H01L23/373 ,  H01L23/498 ,  H05K3/46 ,  H05K1/18

Abstract: This disclosure relates to integrated circuit (IC) packages and methods of manufacturing the same. In one method, a printed circuit board is provided with semiconductor die. The semiconductor die includes a Back-End-of-Line (BEOL) region, a Front-End-of-Line (FEOL) region, and a semiconductor handle such that the BEOL region, the FEOL region, and the semiconductor handle are stacked. A first polymer layer is provided over the printed circuit board so as to cover the semiconductor die. The semiconductor handle of the semiconductor die is exposed through the first polymer layer and removed. A second polymer layer is then provided so that the BEOL region, the FEOL region, and at least a portion of the second polymer layer are stacked. The second polymer layer may be provided to have high thermal conductivity and electric isolation properties thereby providing advantageous package characteristics.

公开(公告)号：US10008431B2

公开(公告)日：2018-06-26

申请号：US14885202

申请日：2015-10-16

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Julio C. Costa ,  Baker Scott ,  George Maxim

IPC: H01L23/29 ,  H01L23/31 ,  H01L21/304 ,  H01L21/02 ,  H01L21/683 ,  H01L23/373 ,  H01L23/00 ,  H05K1/02 ,  H05K1/18 ,  H01Q1/50 ,  H01L23/36 ,  H01L21/56 ,  H01L23/20 ,  H01L23/367 ,  H01L21/306 ,  H01L23/522 ,  H01L49/02

Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 106 Ohm-cm.

公开(公告)号：US09942991B2

公开(公告)日：2018-04-10

申请号：US14872910

申请日：2015-10-01

Applicant: RF Micro Devices, Inc.

Inventor： Julio C. Costa ,  George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H01L21/50 ,  H01L21/56 ,  H01L23/48 ,  H05K3/30 ,  H05K3/28 ,  H01F27/24 ,  H01L23/31 ,  H01L23/36 ,  H01L23/373 ,  H01L23/498 ,  H05K3/46 ,  H05K1/18

Abstract: This disclosure relates to integrated circuit (IC) packages and methods of manufacturing the same. In one method, a printed circuit board is provided with semiconductor die. The semiconductor die includes a Back-End-of-Line (BEOL) region, a Front-End-of-Line (FEOL) region, and a semiconductor handle such that the BEOL region, the FEOL region, and the semiconductor handle are stacked. A first polymer layer is provided over the printed circuit board so as to cover the semiconductor die. The semiconductor handle of the semiconductor die is exposed through the first polymer layer and removed. A second polymer layer is then provided so that the BEOL region, the FEOL region, and at least a portion of the second polymer layer are stacked. The second polymer layer may be provided to have high thermal conductivity and electric isolation properties thereby providing advantageous package characteristics.

公开(公告)号：US09871499B2

公开(公告)日：2018-01-16

申请号：US14554943

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03H7/01 ,  H03H7/40 ,  H01F17/00 ,  H03F1/56 ,  H03F3/24 ,  H03H7/38

CPC classification number: H03H7/0161 ,  H01F17/0013 ,  H03F1/565 ,  H03F3/245 ,  H03F2200/546 ,  H03H7/0115 ,  H03H7/1708 ,  H03H7/1716 ,  H03H7/1766 ,  H03H7/1775 ,  H03H7/40 ,  H03H2007/386

Abstract: Radio frequency (RF) filter structures and related methods and RF front-end circuitry are disclosed. In one embodiment, an RF filter structure includes a first terminal and a first tunable RF filter path defined between the first terminal and a second terminal. The first tunable RF filter path is tunable to provide impedance matching between the first terminal and the second terminal at a first frequency. The first frequency may be provided within a first frequency band. Additionally, the RF filter structure includes a second tunable RF filter path defined between the first terminal and the second terminal. The second tunable RF filter path is tunable to provide impedance matching between the first terminal and the second terminal at a second frequency. The second frequency may be within a second frequency band. In this manner, the RF filter structure is configured to provide impedance tuning for multiple impedance bands simultaneously.

公开(公告)号：US09859863B2

公开(公告)日：2018-01-02

申请号：US14554975

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03H7/01 ,  H03H7/46 ,  H03H7/09 ,  H01F17/00 ,  H03F3/195 ,  H03F3/24 ,  H03F3/68

CPC classification number: H03H7/0161 ,  H01F17/0013 ,  H03F3/195 ,  H03F3/245 ,  H03F3/68 ,  H03F2200/168 ,  H03F2200/546 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/463

Abstract: Radio frequency (RF) front-end circuitry that includes control circuitry and an RF filter structure that includes a plurality of resonators are disclosed. In one embodiment, a first tunable RF filter path is defined by a first set of the plurality of resonators such that the first tunable RF filter path has a first amplitude and a first phase. A second tunable RF filter path is defined by a second set of the plurality of resonators such that the second tunable RF filter path has a second amplitude and a second phase. To provide antenna diversity and/or beam forming/beam steering, the control circuitry is configured to set a first amplitude difference between the first amplitude and the second amplitude to approximately a first target amplitude difference and set a first phase difference between the first phase and the second phase to approximately a first target phase difference.

公开(公告)号：US09825656B2

公开(公告)日：2017-11-21

申请号：US14450204

申请日：2014-08-01

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H04B1/04 ,  H03F3/24 ,  H04B1/16 ,  H03F3/19 ,  H03F1/56 ,  H03F3/193 ,  H03F3/68 ,  H03F3/72 ,  H03H7/09 ,  H03H7/01

CPC classification number: H04B1/0475 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/09 ,  H03H7/1775 ,  H03H2210/025 ,  H04B1/0458

Abstract: RF communications circuitry, which includes a first tunable RF filter and an RF power amplifier (PA), is disclosed. The first tunable RF filter includes a pair of weakly coupled resonators, and receives and filters a first upstream RF signal to provide a first filtered RF signal. The RF PA is coupled to the first tunable RF filter, and receives and amplifies an RF input signal to provide an RF output signal.

公开(公告)号：US09787270B2

公开(公告)日：2017-10-10

申请号：US14554681

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： Baker Scott ,  George Maxim ,  Dirk Robert Walter Leipold

IPC: H03F1/52 ,  H03G3/30 ,  H03F1/02 ,  H03F3/19 ,  H04B1/04 ,  H03F1/32 ,  H03F3/68 ,  H03F1/22 ,  H03F1/56 ,  H03F3/45 ,  H03F3/193

CPC classification number: H03G3/3036 ,  H03F1/0211 ,  H03F1/0272 ,  H03F1/223 ,  H03F1/32 ,  H03F1/523 ,  H03F1/565 ,  H03F3/19 ,  H03F3/193 ,  H03F3/24 ,  H03F3/45179 ,  H03F3/45394 ,  H03F3/68 ,  H03F2200/324 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/471 ,  H03F2201/3236 ,  H03G3/3042 ,  H04B1/0475 ,  H04B2001/0408 ,  H04B2001/0416 ,  H04B2001/0425

Abstract: A power amplifier includes an amplifier element and overstress management circuitry coupled to the amplifier element. The overstress management circuitry is configured to detect an overstress condition of the amplifier element and adjust one or more operating parameters of the amplifier element in response to the detection of an overstress condition of the amplifier element. Using the overstress management circuitry prevents damage to the amplifier element that may occur due to uncorrected overstress conditions which may degrade or destroy a gate oxide of the amplifier element. Accordingly, the longevity of the amplifier element is improved.