摘要:
A drain-extended metal-oxide-semiconductor transistor (40) with improved robustness in breakdown characteristics is disclosed. Field oxide isolation structures (29c) are disposed between the source region (30) and drain contact regions (32a, 32b, 32c) to break the channel region of the transistor into parallel sections. The gate electrode (35) extends over the multiple channel regions, and the underlying well (26) and thus the drift region (DFT) of the transistor extends along the full channel width. Channel stop doped regions (33) underlie the field oxide isolation structures (29c), and provide conductive paths for carriers during breakdown. Parasitic bipolar conduction, and damage due to that conduction, is therefore avoided.
摘要:
A CMOS integrated circuit (15A-B-C) includes both relatively low-power (124, 126) and high-power (132, 134) CMOS transistors on the same chip. A 20V, relatively high-power PMOS device (134) includes a heavily doped N-well drain region (70). A 20V, relatively high-power NMOS device (132) includes heavily doped P-type buried layers (76, 78) underneath the source (94) and drain regions (96) and spanning the gap between the P-well gate (90F) and adjacent P-well isolation regions (46, 50).
摘要:
The present invention provides, in one embodiment, a transistor (100). The transistor (100) comprises a doped semiconductor substrate (105) and a gate structure (110) over the semiconductor substrate (105), the gate structure (110) having a gate corner (125). The transistor (100) also includes a drain-extended well (115) surrounded by the doped semiconductor substrate (105). The drain-extended well (115) has an opposite dopant type as the doped semiconductor substrate (105). The drain-extended well (115) also has a low-doped region (145) between high-doped regions (150), wherein an edge of the low-doped region (155) is substantially coincident with a perimeter (140) defined by the gate corner (125). Other embodiments of the present invention include a method of manufacturing a transistor (200) and an integrated circuit (300).
摘要:
A transistor can be fabricated to exhibit reduced channel hot carrier effects. According to one aspect of the present invention, a method for fabricating a transistor structure includes implanting a first dopant into a lightly doped drain (LDD) region to form a shallow region therein. The first dopant penetrates the substrate to a depth that is less than the LDD junction depth. A second dopant is implanted into the substrate beyond the LDD junction depth to form a source/drain region. The implantation of the second dopant overpowers a substantial portion of the first dopant to define a floating ring in the LDD region that mitigates channel hot carrier effects.
摘要:
A drain-extended metal-oxide-semiconductor transistor (40) with improved robustness in breakdown characteristics is disclosed. Field oxide isolation structures (29c) are disposed between the source region (30) and drain contact regions (32a, 32b, 32c) to break the channel region of the transistor into parallel sections. The gate electrode (35) extends over the multiple channel regions, and the underlying well (26) and thus the drift region (DFT) of the transistor extends along the full channel width. Channel stop doped regions (33) underlie the field oxide isolation structures (29c), and provide conductive paths for carriers during breakdown. Parasitic bipolar conduction, and damage due to that conduction, is therefore avoided.
摘要:
A RESURF LDMOS transistor (32) has a drain region including a first region (24) and a deep drain buffer region (34) surrounding the first region. The first region is more heavily doped than the deep drain buffer region. The deep drain buffer region improves the robustness of the transistor.
摘要:
An integrated circuit on an SOI substrate containing an extended drain MOS transistor with a through substrate diode in a drain (n-channel) or body region (p-channel) so that the drain or body region is coupled to the handle wafer through a p-n junction. An integrated circuit on an SOI substrate containing an extended drain MOS transistor with a through substrate diode in a drain (n-channel) or body region (p-channel) coupled to the handle wafer through a p-n junction, that is electrically isolated from the drain or body region. A process of forming an integrated circuit on an SOI substrate containing an extended drain MOS transistor with a through substrate diode in a drain (n-channel) or body region (p-channel).
摘要:
The width of a heavily-doped sinker is substantially reduced by forming the heavily-doped sinker to lie in between a number of closely-spaced trench isolation structures, which have been formed in a semiconductor material. During drive-in, the closely-spaced trench isolation structures significantly limit the lateral diffusion.
摘要:
A junction field-effect transistor (JFET) includes a substrate having a first-type semiconductor surface including a topside surface, and a top gate of a second-type formed in the semiconductor surface. A first-type drain and a first-type source are formed on opposing sides of the top gate. A first deep trench isolation region has an inner first trench wall and an outer first trench wall surrounding the top gate, the drain and the source, and extends vertically to a deep trench depth from the topside surface. A second-type sinker formed in semiconductor surface extends laterally outside the outer first trench wall. The sinker extends vertically from the topside surface to a second-type deep portion which is both below the deep trench depth and laterally inside the inner first trench wall to provide a bottom gate.
摘要:
An electronic device has a plurality of trenches formed in a semiconductor layer. A vertical drift region is located between and adjacent the trenches. An electrode is located within each trench, the electrode having a gate electrode section and a field plate section. A graded field plate dielectric having increased thickness at greater depth is located between the field plate section and the vertical drift region.