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    Photoacid generator and photoresist comprising same
    41.
    发明授权
    Photoacid generator and photoresist comprising same 有权
    光生酸产生剂和包含其的光致抗蚀剂

    公开(公告)号：US08900794B2

    公开(公告)日：2014-12-02

    申请号：US13630456

    申请日：2012-09-28

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Emad Aqad ,  Cheng-Bai Xu ,  Mingqi Li ,  Shintaro Yamada ,  William Williams, III

    IPC: G03F7/038 ,  G03F7/039 ,  G03F7/029 ,  G03F7/09 ,  C07C309/65

    CPC classification number: G03F7/30 ,  C07C309/65 ,  C07C311/09 ,  C07C2603/74 ,  C07D313/08 ,  C07D313/10 ,  C07D327/04 ,  C07D493/18 ,  C07D497/18 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0397 ,  G03F7/2041

    Abstract: A photoacid generator compound has the formula (I): [A-(CHR1)p]k-(L)-(CH2)m—(C(R2)2)n—SO3−Z+  (I) wherein A is a substituted or unsubstituted, monocyclic, polycyclic, or fused polycyclic C5 or greater cycloaliphatic group optionally comprising O, S, N, F, or a combination comprising at least one of the foregoing, R1 is H, a single bond, or a substituted or unsubstituted C1-30 alkyl group, wherein when R1 is a single bond, R1 is covalently bonded to a carbon atom of A, each R2 is independently H, F, or C1-4 fluoroalkyl, wherein at least one R2 is not hydrogen, L is a linking group comprising a sulfonate group, a sulfonamide group, or a C1-30 sulfonate or sulfonamide-containing group, Z is an organic or inorganic cation, p is an integer of 0 to 10,k is 1 or 2, m is an integer of 0 or greater, and n is an integer of 1 or greater. A precursor compound to the photoacid generator, a photoresist composition including the photoacid generator, and a substrate coated with the photoresist composition, are also disclosed.

    Abstract translation: 光生酸化合物具有式（I）：其中A是取代基的[A-（CHR1）p] k-（L） - （CH2）m-（C（R2）2）n-SO3-Z +（I） 或任选包含O，S，N，F或包含前述至少之一的组合的未取代的单环，多环或稠合多环C 5或更多脂环族基团，R 1是H，单键或取代或未取代的C1 -30烷基，其中当R 1为单键时，R 1与A的碳原子共价连接，每个R 2独立地为H，F或C 1-4氟烷基，其中至少一个R 2不为氢，L为 包含磺酸酯基，磺酰胺基或C1-30磺酸酯或磺酰胺的基团的连接基团，Z是有机或无机阳离子，p是0至10的整数，k是1或2，m是整数 为0以上，n为1以上的整数。 还公开了光致酸产生剂的前体化合物，包含光致酸产生剂的光致抗蚀剂组合物和涂有光致抗蚀剂组合物的基材。

    Photoresist compositions and pattern formation methods
    43.
    发明授权
    Photoresist compositions and pattern formation methods 有权

    公开(公告)号：US11852972B2

    公开(公告)日：2023-12-26

    申请号：US17084993

    申请日：2020-10-30

    Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

    Inventor： Tomas Marangoni ,  Emad Aqad ,  James W. Thackeray ,  James F. Cameron ,  Xisen Hou ,  ChoongBong Lee

    IPC: G03F7/004 ,  G03F7/30 ,  G03F7/20

    CPC classification number: G03F7/0045 ,  G03F7/2004 ,  G03F7/2041 ,  G03F7/30

    Abstract: A photoresist composition, comprising an acid-sensitive polymer comprising a repeating unit having an acid-labile group; an iodonium salt comprising an anion and a cation, the iodonium salt having Formula (1):




    wherein Z− is an organic anion; Ar1 is substituted or unsubstituted C4-60 heteroaryl group comprising a furan heterocycle; and R1 is substituted or unsubstituted hydrocarbon group as provided herein, wherein the cation optionally comprises an acid-labile group, wherein Ar1 and R1 are optionally connected to each other via a single bond or one or more divalent linking groups to form a ring, and wherein the iodonium salt is optionally covalently bonded through Ar1 or substituent thereof as a pendant group to a polymer, the iodonium salt is optionally covalently bonded through R1 or substituent thereof as a pendant group to a polymer, or the iodonium salt is optionally covalently bonded through Z− as a pendant group to a polymer; and a solvent.

    PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS
    44.
    发明公开
    PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS 审中-公开

    公开(公告)号：US20230213862A1

    公开(公告)日：2023-07-06

    申请号：US18085098

    申请日：2022-12-20

    Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

    Inventor： Li Cui ,  Suzanne M. Coley ,  Emad Aqad ,  Yinjie Cen ,  Jong Keun Park ,  Choong-Bong Lee ,  James F. Cameron

    IPC: G03F7/039

    CPC classification number: G03F7/0392

    Abstract: A photoresist composition, comprising: a first polymer comprising: a first repeating unit comprising a hydroxyaryl group; a second repeating unit comprising a first acid-labile group; and a third repeating unit comprising a first base-soluble group having a pKa of 12 or less, and not comprising a hydroxyaryl group; wherein the first, second, and third repeating units of the first polymer are different from each other, and the first polymer is free of lactone groups; a second polymer comprising: a first repeating unit comprising a second acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a second base-soluble group having a pKa of 12 or less; wherein the first, second, and third repeating units of the second polymer are structurally different from each other; and a solvent, wherein the first polymer and the second polymer are different from each other.

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