Apparatus for processing substrate
    41.
    发明授权

    公开(公告)号:US11752516B2

    公开(公告)日:2023-09-12

    申请号:US17453506

    申请日:2021-11-04

    CPC classification number: B05C5/0225 G03F7/162

    Abstract: The inventive concept provides an apparatus for processing a substrate. The apparatus includes a mount; a processing liquid supply nozzle configured to provide a processing liquid to the substrate and a discharge container including: a base plate including a liquid outlet and an exhaust port; an inner wall standing on an inner circumference of the base plate; an outer wall standing on an outer circumference of the base plate; and a barrier standing on the base plate to separate a first space connected to the liquid outlet from a second space connected to the exhaust port. The apparatus further includes an inner cover configured to guide the flow of a processing liquid from the substrate supported by the mount to the first space of the discharge container; and a flow guide mounted in the first space of the discharge container.

    Electronic device for recognizing fingerprint of user and method thereof

    公开(公告)号:US11599262B2

    公开(公告)日:2023-03-07

    申请号:US17231253

    申请日:2021-04-15

    Abstract: An electronic device is provided. The electronic device includes a display, a fingerprint recognition sensor disposed under a first area of the display, at least one input detection sensor, and at least one processor electrically connected with the display, the fingerprint recognition sensor, and the at least one input detection sensor, wherein the at least one processor is configured to detect a designated event through the at least one input detection sensor, acquire background information through the fingerprint recognition sensor according to detection of the designated event, acquire fingerprint information of an object through the fingerprint recognition sensor in response to detecting the object on the first area of the display, and subtract the background information from the fingerprint information.

    SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20230046782A1

    公开(公告)日:2023-02-16

    申请号:US17700879

    申请日:2022-03-22

    Abstract: Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises a substrate that includes a plurality of vias, a first chip stack on the substrate and including a plurality of first semiconductor chips that are sequentially stacked on the substrate, and a plurality of first non-conductive layers between the substrate and the first chip stack and between neighboring first semiconductor chips. Each of the first non-conductive layers includes first extensions that protrude outwardly from first lateral surfaces of the first semiconductor chips. The more remote the first non-conductive layers are from the substrate, the first extensions protrude a shorter length from the first lateral surfaces of the first semiconductor chips.

    Semiconductor package
    45.
    发明授权

    公开(公告)号:US11538801B2

    公开(公告)日:2022-12-27

    申请号:US17220468

    申请日:2021-04-01

    Abstract: A semiconductor package includes a first substrate that includes a first trench on a recessed portion of a bottom surface of the first substrate and a first through hole extending through the first substrate to the first trench, a first semiconductor chip on the first substrate, a first capacitor chip in the first trench and on the first substrate, and a first molding layer on the first substrate and covering the first semiconductor chip. The first molding layer includes a first part that extends parallel to a top surface of the first substrate, a second part connected to the first part and extending vertically in the first through hole, and a third part connected to the second part and surrounding the first capacitor chip. A bottom surface of the third part is coplanar with the bottom surface of the first substrate.

    SEMICONDUCTOR DEVICES HAVING MULTIPLE BARRIER PATTERNS

    公开(公告)号:US20210028291A1

    公开(公告)日:2021-01-28

    申请号:US16886881

    申请日:2020-05-29

    Abstract: Semiconductor devices are provided. A semiconductor device includes a first active pattern on a first region of a substrate, a pair of first source/drain patterns on the first active pattern, a first channel pattern between the pair of first source/drain patterns, and a gate electrode that extends across the first channel pattern. The gate electrode is on an uppermost surface and at least one sidewall of the first channel pattern. The gate electrode includes a first metal pattern including a p-type work function metal, a second metal pattern on the first metal pattern and including an n-type work function metal, a first barrier pattern on the second metal pattern and including an amorphous metal layer that includes tungsten (W), carbon (C), and nitrogen (N), and a second barrier pattern on the first barrier pattern. The second barrier pattern includes the p-type work function metal.

Patent Agency Ranking