公开(公告)号：US09954111B2

公开(公告)日：2018-04-24

申请号：US14659656

申请日：2015-03-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa

IPC: H01L27/12 ,  H01L29/16 ,  H01L29/786 ,  H01L29/06 ,  H01L49/02 ,  H01L29/78 ,  H01L27/06 ,  H01L29/24 ,  H01L27/1156

CPC classification number: H01L29/7869 ,  H01L27/0629 ,  H01L27/0688 ,  H01L27/1156 ,  H01L27/1225 ,  H01L29/0657 ,  H01L29/16 ,  H01L29/24 ,  H01L29/78

Abstract: Provided is a highly integrated semiconductor device, a semiconductor device with large storage capacity with respect to an area occupied by a capacitor, a semiconductor device capable of high-speed writing, a semiconductor device capable of high-speed reading, a semiconductor device with low power consumption, or a highly reliable semiconductor device. The semiconductor device includes a first transistor, a second transistor, and a capacitor. A conductor penetrates and connects the first transistor, the capacitor, and the second transistor. An insulator is provided on a side surface of the conductor that penetrates the capacitor.

公开(公告)号：US09887295B2

公开(公告)日：2018-02-06

申请号：US15270064

申请日：2016-09-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Yuhei Sato ,  Sachiaki Tezuka ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L27/12 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/78648 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/41733 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2029/42388

Abstract: A transistor having high field-effect mobility is provided. A transistor having stable electrical characteristics is provided. A transistor having small current in an off state (in a non-conductive state) is provided. A semiconductor device including such a transistor is provided. A first electrode is formed over a substrate, a first insulating layer is formed adjacent to a side surface of the first electrode, and a second insulating layer is formed to cover the first insulating layer and be in contact with at least part of a surface of the first electrode. The surface of the first electrode is formed of a conductive material that does not easily transmit an impurity element. The second insulating layer is formed of an insulating material that does not easily transmit an impurity element. An oxide semiconductor layer is formed over the first electrode with a third insulating layer provided therebetween.

公开(公告)号：US09859444B2

公开(公告)日：2018-01-02

申请号：US15490433

申请日：2017-04-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Masami Jintyou

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/49 ,  H01L29/423 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78696

Abstract: A self-aligned transistor including an oxide semiconductor film, which has excellent and stable electrical characteristics, is provided. A semiconductor device is provided with a transistor that includes an oxide semiconductor film, a gate electrode overlapping with part of the oxide semiconductor film, and a gate insulating film between the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a first region and second regions between which the first region is positioned. The second regions include an impurity element. A side of the gate insulating film has a depressed region. Part of the gate electrode overlaps with parts of the second regions in the oxide semiconductor film.

公开(公告)号：US09853069B2

公开(公告)日：2017-12-26

申请号：US15629970

申请日：2017-06-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideomi Suzawa ,  Shinya Sasagawa ,  Taiga Muraoka

IPC: H01L29/10 ,  H01L29/12 ,  H01L27/12 ,  H01L29/786 ,  H01L27/32 ,  G11C19/28 ,  G09G3/36 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/167 ,  G09F21/04

CPC classification number: H01L27/127 ,  G02F1/134309 ,  G02F1/136227 ,  G02F1/167 ,  G09F21/04 ,  G09G3/3648 ,  G09G3/3677 ,  G09G2300/0408 ,  G09G2300/0809 ,  G09G2310/0251 ,  G09G2310/0286 ,  G09G2310/08 ,  G11C19/28 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to establish a processing technique in manufacture of a semiconductor device in which an oxide semiconductor is used. A gate electrode is formed over a substrate, a gate insulating layer is formed over the gate electrode, an oxide semiconductor layer is formed over the gate insulating layer, the oxide semiconductor layer is processed by wet etching to form an island-shaped oxide semiconductor layer, a conductive layer is formed to cover the island-shaped oxide semiconductor layer, the conductive layer is processed by dry etching to form a source electrode, and a drain electrode and part of the island-shaped oxide semiconductor layer is removed by dry etching to form a recessed portion in the island-shaped oxide semiconductor layer.

公开(公告)号：US09812467B2

公开(公告)日：2017-11-07

申请号：US15041338

申请日：2016-02-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Shinya Sasagawa ,  Tetsuhiro Tanaka

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L29/04 ,  H01L29/26 ,  H01L29/78

CPC classification number: H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02617 ,  H01L21/02631 ,  H01L29/045 ,  H01L29/26 ,  H01L29/78 ,  H01L29/7869

Abstract: A semiconductor device in which an increase in oxygen vacancies in an oxide semiconductor layer can be suppressed is provided. A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device includes an oxide semiconductor layer in a channel formation region, and by the use of an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer, oxygen of the oxide insulating film or the gate insulating film is supplied to the oxide semiconductor layer. Further, a conductive nitride is used for metal films of a source electrode layer, a drain electrode layer, and a gate electrode layer, whereby diffusion of oxygen to the metal films is suppressed.

公开(公告)号：US09755081B2

公开(公告)日：2017-09-05

申请号：US14954155

申请日：2015-11-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Yutaka Okazaki ,  Hidekazu Miyairi

IPC: H01L29/786 ,  H01L21/822 ,  H01L27/06 ,  H01L29/423

CPC classification number: H01L29/78606 ,  H01L21/8221 ,  H01L27/0688 ,  H01L29/42384 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78696

Abstract: A structure is employed in which a first protective insulating layer; an oxide semiconductor layer over the first protective insulating layer; a source electrode and a drain electrode that are electrically connected to the oxide semiconductor layer; a gate insulating layer that is over the source electrode and the drain electrode and overlaps with the oxide semiconductor layer; a gate electrode that overlaps with the oxide semiconductor layer with the gate insulating layer provided therebetween; and a second protective insulating layer that covers the source electrode, the drain electrode, and the gate electrode are included. Furthermore, the first protective insulating layer and the second protective insulating layer each include an aluminum oxide film that includes an oxygen-excess region, and are in contact with each other in a region where the source electrode, the drain electrode, and the gate electrode are not provided.

公开(公告)号：US09691789B2

公开(公告)日：2017-06-27

申请号：US15180642

申请日：2016-06-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideomi Suzawa ,  Shinya Sasagawa ,  Taiga Muraoka

IPC: H01L29/10 ,  H01L29/12 ,  H01L27/12 ,  H01L21/465 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/127 ,  G02F1/134309 ,  G02F1/136227 ,  G02F1/167 ,  G09F21/04 ,  G09G3/3648 ,  G09G3/3677 ,  G09G2300/0408 ,  G09G2300/0809 ,  G09G2310/0251 ,  G09G2310/0286 ,  G09G2310/08 ,  G11C19/28 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to establish a processing technique in manufacture of a semiconductor device in which an oxide semiconductor is used. A gate electrode is formed over a substrate, a gate insulating layer is formed over the gate electrode, an oxide semiconductor layer is formed over the gate insulating layer, the oxide semiconductor layer is processed by wet etching to form an island-shaped oxide semiconductor layer, a conductive layer is formed to cover the island-shaped oxide semiconductor layer, the conductive layer is processed by dry etching to form a source electrode, and a drain electrode and part of the island-shaped oxide semiconductor layer is removed by dry etching to form a recessed portion in the island-shaped oxide semiconductor layer.

公开(公告)号：US09455349B2

公开(公告)日：2016-09-27

申请号：US14518259

申请日：2014-10-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Yuhei Sato ,  Sachiaki Tezuka ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/423 ,  H01L27/12

CPC classification number: H01L29/78648 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/41733 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2029/42388

Abstract: A transistor having high field-effect mobility is provided. A transistor having stable electrical characteristics is provided. A transistor having small current in an off state (in a non-conductive state) is provided. A semiconductor device including such a transistor is provided. A first electrode is formed over a substrate, a first insulating layer is formed adjacent to a side surface of the first electrode, and a second insulating layer is formed to cover the first insulating layer and be in contact with at least part of a surface of the first electrode. The surface of the first electrode is formed of a conductive material that does not easily transmit an impurity element. The second insulating layer is formed of an insulating material that does not easily transmit an impurity element. An oxide semiconductor layer is formed over the first electrode with a third insulating layer provided therebetween.

Abstract translation: 提供具有高场效应迁移率的晶体管。 提供具有稳定电特性的晶体管。 提供了处于断开状态（非导通状态）的小电流的晶体管。 提供了包括这种晶体管的半导体器件。 第一电极形成在衬底上，第一绝缘层与第一电极的侧表面相邻地形成，并且形成第二绝缘层以覆盖第一绝缘层并与第一绝缘层的至少一部分表面接触 第一个电极。 第一电极的表面由不容易透过杂质元素的导电材料形成。 第二绝缘层由不容易透过杂质元素的绝缘材料形成。 在第一电极上形成氧化物半导体层，其间设置有第三绝缘层。

公开(公告)号：US09431547B2

公开(公告)日：2016-08-30

申请号：US15049554

申请日：2016-02-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masayuki Sakakura ,  Hideomi Suzawa

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/04

CPC classification number: H01L29/78696 ,  H01L27/1052 ,  H01L27/1225 ,  H01L27/14616 ,  H01L29/04 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7854 ,  H01L29/7869 ,  H01L29/78693

Abstract: A semiconductor device having a structure which can prevent a decrease in electrical characteristics due to miniaturization is provided. The semiconductor device includes, over an insulating surface, a stack in which a first oxide semiconductor layer and a second oxide semiconductor layer are sequentially formed, and a third oxide semiconductor layer covering part of a surface of the stack. The third oxide semiconductor layer includes a first layer in contact with the stack and a second layer over the first layer. The first layer includes a microcrystalline layer, and the second layer includes a crystalline layer in which c-axes are aligned in a direction perpendicular to a surface of the first layer.

公开(公告)号：US09343581B2

公开(公告)日：2016-05-17

申请号：US14580651

申请日：2014-12-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Hideomi Suzawa ,  Yasumasa Yamane ,  Yuhei Sato ,  Sachiaki Tezuka

IPC: H01L29/786 ,  H01L29/16 ,  H01L27/088 ,  H01L27/06

Abstract: To provide a transistor with stable electrical characteristics, a transistor with a low off-state current, a transistor with a high on-state current, a semiconductor device including the transistor, or a durable semiconductor device. The semiconductor device includes a first transistor using silicon, an aluminum oxide film over the first transistor, and a second transistor using an oxide semiconductor over the aluminum oxide film. The oxide semiconductor has a lower hydrogen concentration than silicon.