公开(公告)号：US20130337607A1

公开(公告)日：2013-12-19

申请号：US13975453

申请日：2013-08-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Makoto Furuno

IPC: H01L29/66

CPC classification number: H01L21/02266 ,  C23C14/0036 ,  C23C14/08 ,  C23C14/3407 ,  C23C14/3414 ,  H01L21/02112 ,  H01L21/8232 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1251 ,  H01L28/60 ,  H01L29/4908 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78645 ,  H01L29/7869

Abstract: An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using a gallium oxide film as an insulating layer such as a gate insulating layer of a transistor. An insulating film is formed by a DC sputtering method or a pulsed DC sputtering method, using an oxide target including gallium oxide (also referred to as GaOX). The oxide target includes GaOX, and X is less than 1.5, preferably more than or equal to 0.01 and less than or equal to 0.5, further preferably more than or equal to 0.1 and less than or equal to 0.2. The oxide target has conductivity, and sputtering is performed in an oxygen gas atmosphere or a mixed atmosphere of an oxygen gas and a rare gas such as argon.

公开(公告)号：US20130299803A1

公开(公告)日：2013-11-14

申请号：US13946635

申请日：2013-07-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Hisao Ikeda ,  Takahiro Kawakami

IPC: H01L51/50

CPC classification number: H01L27/3218 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/06 ,  C09K2211/1011 ,  C09K2211/1029 ,  C09K2211/1033 ,  C09K2211/1044 ,  C09K2211/185 ,  C09K2211/188 ,  H01L27/3211 ,  H01L27/3213 ,  H01L27/3295 ,  H01L51/5012 ,  H01L51/5088 ,  H01L51/5092 ,  H01L2227/32 ,  H01L2251/5323 ,  H01L2251/5369 ,  H01L2251/564 ,  Y10S428/917

Abstract: An EL element having a novel structure is provided, which is suitable for AC drive. A light-emitting element of the invention is provided with material layers (material layers each having approximately symmetric I-V characteristics with respect to the zero point in a graph having the abscissa axis showing current values and the ordinate axis showing voltage values) between a first electrode and a layer including an organic compound and between the layer including the organic compound and a second electrode respectively. Specifically, each of the material layers is a composite layer including a metal oxide and an organic compound.

公开(公告)号：US20130240856A1

公开(公告)日：2013-09-19

申请号：US13875491

申请日：2013-05-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hisao Ikeda ,  Hiroki Ohara ,  Makoto Hosoba ,  Junichiro Sakata ,  Shunichi Ito

IPC: H01L51/52

CPC classification number: H01L51/5253 ,  G09G3/3291 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3272 ,  H01L51/5012 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/525 ,  H01L51/5262 ,  H01L51/5275 ,  H01L51/5284 ,  H01L2251/301 ,  H01L2251/5315 ,  H01L2251/5323 ,  H01L2251/5338 ,  H01L2251/5361

Abstract: There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

公开(公告)号：US12272698B2

公开(公告)日：2025-04-08

申请号：US18616403

申请日：2024-03-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Toshinari Sasaki ,  Miyuki Hosoba

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

公开(公告)号：US12198941B2

公开(公告)日：2025-01-14

申请号：US18434977

申请日：2024-02-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

IPC: H01L27/12 ,  G02F1/1333 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/477 ,  H01L29/66 ,  H01L29/786

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

公开(公告)号：US12002818B2

公开(公告)日：2024-06-04

申请号：US18215987

申请日：2023-06-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masayuki Sakakura ,  Yoshiaki Oikawa ,  Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba

IPC: H01L27/14 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/1368 ,  H01L27/12

CPC classification number: H01L27/124 ,  G02F1/134309 ,  G02F1/13454 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/1255 ,  G02F2202/10

Abstract: The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

公开(公告)号：US11947228B2

公开(公告)日：2024-04-02

申请号：US17412495

申请日：2021-08-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Miyuki Hosoba ,  Junichiro Sakata ,  Hideaki Kuwabara

IPC: H01L27/12 ,  G02F1/1362 ,  H01L29/45 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1368 ,  G02F1/167 ,  G09G3/34 ,  G09G3/36 ,  H10K59/121

CPC classification number: G02F1/136227 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1274 ,  H01L29/45 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  G02F1/1339 ,  G02F1/134336 ,  G02F1/1345 ,  G02F1/13606 ,  G02F1/136286 ,  G02F1/1368 ,  G02F1/167 ,  G02F2201/123 ,  G09G3/344 ,  G09G3/3677 ,  G09G2300/0426 ,  G09G2310/0286 ,  G09G2310/08 ,  H10K59/1213

Abstract: An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate thin film transistor using an oxide semiconductor layer, an oxide insulating layer used as a channel protection layer is formed above and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer, and at the same time an oxide insulating layer covering a peripheral portion (including a side surface) of the stacked oxide semiconductor layer is formed. Further, a source electrode layer and a drain electrode layer are formed in a manner such that they do not overlap with the channel protection layer. Thus, a structure in which an insulating layer over the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer is provided.

公开(公告)号：US11817506B2

公开(公告)日：2023-11-14

申请号：US17367689

申请日：2021-07-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Jun Koyama

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/24 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L27/124 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631

Abstract: A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

公开(公告)号：US11545579B2

公开(公告)日：2023-01-03

申请号：US17066604

申请日：2020-10-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto

IPC: H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24

Abstract: Many of the physical properties of a silicon semiconductor have already been understood, whereas many of the physical properties of an oxide semiconductor have been still unclear. In particular, an adverse effect of an impurity on an oxide semiconductor has been still unclear. In view of the above, a structure is disclosed in which an impurity that influences electrical characteristics of a semiconductor device including an oxide semiconductor layer is prevented or is eliminated. A semiconductor device which includes a gate electrode, an oxide semiconductor layer, and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer and in which the nitrogen concentration in the oxide semiconductor layer is 1×1020 atoms/cm3 or less is provided.

公开(公告)号：US11532488B2

公开(公告)日：2022-12-20

申请号：US17325490

申请日：2021-05-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

IPC: H01L29/768 ,  H01L27/12 ,  H01L21/477 ,  H01L29/66 ,  H01L21/02 ,  G02F1/1333 ,  G02F1/1368 ,  H01L29/786

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.