公开(公告)号：US09236385B2

公开(公告)日：2016-01-12

申请号：US14336142

申请日：2014-07-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kosei Noda ,  Kouhei Toyotaka ,  Kazunori Watanabe ,  Hikaru Harada

IPC: H01L29/04 ,  H01L29/12 ,  H01L29/78 ,  H01L27/108 ,  H01L27/11 ,  H01L49/02 ,  H01L29/786 ,  G06F15/76 ,  H01L29/24 ,  H01L27/12

CPC classification number: H01L29/7869 ,  G06F15/76 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1112 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78696

Abstract: An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

Abstract translation: 目的是提供一种存储器件，其包括可通过具有低截止电流的薄膜晶体管无故障地操作的存储元件。 提供了一种存储器件，其中包括至少一个包括氧化物半导体层的薄膜晶体管的存储元件被布置为矩阵。 包括氧化物半导体层的薄膜晶体管具有高场效应迁移率和低截止电流，因此可以有利地操作而没有问题。 此外，可以降低功耗。 由于存储器件和像素可以形成在一个衬底上，所以这种存储器件在包括氧化物半导体层的薄膜晶体管被设置在显示器件的像素中的情况下是特别有效的。

公开(公告)号：US20150303310A1

公开(公告)日：2015-10-22

申请号：US14732874

申请日：2015-06-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroki Ohara ,  Toshinari Sasaki ,  Kosei Noda ,  Hideaki Kuwabara

IPC: H01L29/786 ,  G02F1/1333 ,  G02F1/1368 ,  G02F1/1337 ,  G02F1/1343 ,  H01L27/12 ,  G02F1/1362

CPC classification number: H01L27/1225 ,  G02F1/133345 ,  G02F1/1337 ,  G02F1/134309 ,  G02F1/136227 ,  G02F1/136277 ,  G02F1/1368 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/24 ,  H01L29/517 ,  H01L29/78609 ,  H01L29/7869

Abstract: An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.

Abstract translation: 目的在于提供一种半导体器件，其具有可以充分降低布线之间的寄生电容的结构。 用作沟道保护层的氧化物绝缘层形成在与栅电极层重叠的氧化物半导体层的一部分上。 在与氧化物绝缘层的形成相同的步骤中，形成覆盖氧化物半导体层的周边部分的氧化物绝缘层。 设置覆盖氧化物半导体层的周边部分的氧化物绝缘层以增加栅极电极层与形成在栅电极层的上方或周围的布线层之间的距离，从而降低寄生电容。

公开(公告)号：US08975115B2

公开(公告)日：2015-03-10

申请号：US14148906

申请日：2014-01-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo ,  Kosei Noda ,  Toshinari Sasaki

IPC: H01L21/00 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02164 ,  H01L21/02367 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/7869

Abstract: An insulating layer which releases a large amount of oxygen is used as an insulating layer in contact with a channel region of an oxide semiconductor layer, and an insulating layer which releases a small amount of oxygen is used as an insulating layer in contact with a source region and a drain region of the oxide semiconductor layer. By releasing oxygen from the insulating layer which releases a large amount of oxygen, oxygen deficiency in the channel region and an interface state density between the insulating layer and the channel region can be reduced, so that a highly reliable semiconductor device having small variation in electrical characteristics can be manufactured. The source region and the drain region are provided in contact with the insulating layer which releases a small amount of oxygen, thereby suppressing the increase of the resistance of the source region and the drain region.

Abstract translation: 使用释放大量氧的绝缘层作为与氧化物半导体层的沟道区域接触的绝缘层，并且使用释放少量氧的绝缘层作为与源极接触的绝缘层 区域和氧化物半导体层的漏极区域。 通过从释放大量氧的绝缘层释放氧气，可以减少沟道区域中的氧缺乏以及绝缘层和沟道区域之间的界面态密度，从而可以降低电子变化小的高度可靠的半导体器件 特性可以制造。 源极区域和漏极区域设置成与释放少量氧气的绝缘层接触，从而抑制源极区域和漏极区域的电阻的增加。

公开(公告)号：US08884651B2

公开(公告)日：2014-11-11

申请号：US14073902

申请日：2013-11-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masashi Tsubuku ,  Kosei Noda

IPC: H03K19/0175 ,  H03K19/094 ,  H03K3/00 ,  H03B1/00 ,  G09G3/32 ,  G09G3/20 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L27/1255 ,  G09G3/20 ,  G09G3/2092 ,  G09G3/3233 ,  G09G3/3291 ,  G09G3/36 ,  G09G3/3648 ,  G09G2300/0439 ,  G09G2300/08 ,  G09G2300/0842 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2310/0286 ,  G09G2310/08 ,  G11C19/184 ,  G11C19/28 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869 ,  H03K17/161 ,  H03K19/00315 ,  H03K19/096

Abstract: To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10−13 A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.

Abstract translation: 为了减小晶体管的漏电流，可以抑制逻辑电路的故障。 逻辑电路包括晶体管，其包括具有沟道形成层的功能的氧化物半导体层，并且其中截止电流在沟道宽度中为每微米1×10-13A或更小。 作为时钟信号的第一信号，第二信号和第三信号被输入作为输入信号。 作为输出信号输出第四信号和第五信号，其电压状态根据输入的第一至第三信号而被设定。

公开(公告)号：US20140120660A1

公开(公告)日：2014-05-01

申请号：US14148906

申请日：2014-01-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo ,  Kosei Noda ,  Toshinari Sasaki

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02164 ,  H01L21/02367 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/7869

Abstract: An insulating layer which releases a large amount of oxygen is used as an insulating layer in contact with a channel region of an oxide semiconductor layer, and an insulating layer which releases a small amount of oxygen is used as an insulating layer in contact with a source region and a drain region of the oxide semiconductor layer. By releasing oxygen from the insulating layer which releases a large amount of oxygen, oxygen deficiency in the channel region and an interface state density between the insulating layer and the channel region can be reduced, so that a highly reliable semiconductor device having small variation in electrical characteristics can be manufactured. The source region and the drain region are provided in contact with the insulating layer which releases a small amount of oxygen, thereby suppressing the increase of the resistance of the source region and the drain region.

Abstract translation: 使用释放大量氧的绝缘层作为与氧化物半导体层的沟道区域接触的绝缘层，并且使用释放少量氧的绝缘层作为与源极接触的绝缘层 区域和氧化物半导体层的漏极区域。 通过从释放大量氧的绝缘层释放氧气，可以减少沟道区域中的氧缺乏以及绝缘层和沟道区域之间的界面态密度，从而可以降低电子变化小的高度可靠的半导体器件 特性可以制造。 源极区域和漏极区域设置成与释放少量氧气的绝缘层接触，从而抑制源极区域和漏极区域的电阻的增加。

公开(公告)号：US20130294120A1

公开(公告)日：2013-11-07

申请号：US13875415

申请日：2013-05-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masumi Nomura ,  Kosei Noda

IPC: H02M1/36

CPC classification number: H02M1/36 ,  H02M3/335 ,  H02M3/33507 ,  H02M3/33523 ,  H02M7/517 ,  H02M2001/0006

Abstract: A switching converter in which deterioration and breakage can be suppressed is provided. A switching converter whose area can be reduced is provided. The switching converter includes a switch connected to a power supply portion; a transformer connected to the power supply portion; a first rectifying and smoothing circuit and a second rectifying and smoothing circuit each connected to at least the transformer; and a switching control circuit which is connected to the first rectifying and smoothing circuit and the second rectifying and smoothing circuit and which controls operation of the switch. The switching control circuit includes a control circuit controlling on/off of the switch and operation of a starter circuit; and the starter circuit controlling startup of the control circuit. The starter circuit includes a transistor and a resistor each including a wide-gap semiconductor.

Abstract translation: 提供了可以抑制劣化和断裂的开关转换器。 提供了可以减小面积的开关转换器。 开关转换器包括连接到电源部分的开关; 连接到电源部分的变压器; 第一整流和平滑电路和第二整流和平滑电路，每个至少连接到变压器; 以及切换控制电路，其连接到第一整流平滑电路和第二整流平滑电路，并控制开关的动作。 开关控制电路包括控制开关的开/关和控制起动电路的操作的控制电路; 以及启动电路，控制控制电路的启动。 起动电路包括晶体管和各自包括宽间隙半导体的电阻器。

公开(公告)号：US20130256665A1

公开(公告)日：2013-10-03

申请号：US13803022

申请日：2013-03-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD

Inventor： Toshihiko Takeuchi ,  Kosei Noda

IPC: H01L29/04

CPC classification number: H01L29/04 ,  H01L29/4908 ,  H01L29/78618

Abstract: To provide a semiconductor element in which generation of oxygen vacancies in an oxide semiconductor thin film can be suppressed. The semiconductor element has a structure in which, in a gate insulating film, the nitrogen content of regions which do not overlap with a gate electrode is higher than the nitrogen content of a region which overlaps with the gate electrode. A nitride film has an excellent property of preventing impurity diffusion; thus, with the structure, release of oxygen in the oxide semiconductor film, in particular, in the channel formation region, to the outside of the semiconductor element can be effectively suppressed.

Abstract translation: 提供能够抑制氧化物半导体薄膜中的氧空位的产生的半导体元件。 半导体元件具有这样的结构，其中在栅极绝缘膜中，与栅电极不重叠的区域的氮含量高于与栅电极重叠的区域的氮含量。 氮化物膜具有防止杂质扩散的优异性能; 因此，通过该结构，可以有效地抑制氧化物半导体膜中的氧，特别是沟道形成区域中的氧向半导体元件的外部的释放。

公开(公告)号：US20130228782A1

公开(公告)日：2013-09-05

申请号：US13870027

申请日：2013-04-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Kosei Noda ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Hotaka Maruyama

IPC: H01L29/786

CPC classification number: H01L29/78606 ,  H01L23/5329 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

公开(公告)号：US20130187152A1

公开(公告)日：2013-07-25

申请号：US13742415

申请日：2013-01-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yukie Suzuki ,  Kosei Noda ,  Yoshiaki Oikawa

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/7869

Abstract: A metal element of a metal film is introduced into the oxide semiconductor film by performing heat treatment in the state where the oxide semiconductor film is in contact with the metal film, so that a low-resistance region having resistance lower than that of a channel formation region is formed. A region of the metal film, which is in contact with the oxide semiconductor film, becomes a metal oxide insulating film by the heat treatment. After that, an unnecessary metal film is removed. Thus, the metal oxide insulating film can be formed over the low-resistance region.

Abstract translation: 通过在氧化物半导体膜与金属膜接触的状态下进行热处理，将金属膜的金属元素引入到氧化物半导体膜中，使得具有低于沟道形成的电阻的低电阻区域 形成区域。 与氧化物半导体膜接触的金属膜的区域通过热处理成为金属氧化物绝缘膜。 之后，去除不必要的金属膜。 因此，可以在低电阻区域上形成金属氧化物绝缘膜。

公开(公告)号：US20130122963A1

公开(公告)日：2013-05-16

申请号：US13733291

申请日：2013-01-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Atsushi Hirose ,  Masashi Tsubuku ,  Kosei Noda

IPC: H01L33/02 ,  H04R1/02

CPC classification number: H01L27/1225 ,  H01L21/823412 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/156 ,  H01L27/3213 ,  H01L29/24 ,  H01L29/36 ,  H01L29/7869 ,  H01L29/78693 ,  H01L33/025 ,  H01L2924/0002 ,  H04M1/0266 ,  H04R1/02 ,  H01L2924/00

Abstract: An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

Abstract translation: 目的是获得使用其中使用氧化物半导体层的薄膜晶体管，在检测信号和宽动态范围中具有高灵敏度的半导体器件。 使用具有作为沟道形成层的功能的氧化物半导体的薄膜晶体管形成模拟电路，其氢浓度为5×1019个原子/ cm3以下，并且在该状态下基本上起绝缘体的作用 其中不产生电场。 因此，可以获得在检测信号中具有高灵敏度和宽动态范围的半导体器件。