公开(公告)号：US20220123150A1

公开(公告)日：2022-04-21

申请号：US17567812

申请日：2022-01-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Katsuaki TOCHIBAYASHI ,  Yasutaka NAKAZAWA ,  Masatoshi YOKOYAMA

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/49

Abstract: It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. A semiconductor device having a stacked-layer structure of a gate insulating layer; a first gate electrode in contact with one surface of the gate insulating layer; an oxide semiconductor layer in contact with the other surface of the gate insulating layer and overlapping with the first gate electrode; and a source electrode, a drain electrode, and an oxide insulating layer which are in contact with the oxide semiconductor layer is provided, in which the nitrogen concentration of the oxide semiconductor layer is 2×1019 atoms/cm3 or lower and the source electrode and the drain electrode include one or more of tungsten, platinum, and molybdenum.

公开(公告)号：US20200350576A1

公开(公告)日：2020-11-05

申请号：US16934201

申请日：2020-07-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro KAWAKAMI ,  Teruaki OCHIAI ,  Shuhei YOSHITOMI ,  Takuya HIROHASHI ,  Mako MOTOYOSHI ,  Yohei MOMMA ,  Junya GOTO

IPC: H01M4/505 ,  H01M4/36 ,  H01M4/131 ,  H01M4/1391

Abstract: To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.

公开(公告)号：US20200321470A1

公开(公告)日：2020-10-08

申请号：US16905999

申请日：2020-06-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro SAKATA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/24

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

公开(公告)号：US20180323220A1

公开(公告)日：2018-11-08

申请号：US16024997

申请日：2018-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Masashi TSUBUKU ,  Noritaka ISHIHARA ,  Masashi OOTA

IPC: H01L27/12 ,  H01L29/24 ,  G02F1/1368 ,  H01L29/04 ,  H01L29/786 ,  H01L21/66 ,  G01N23/207 ,  H01L29/66

CPC classification number: H01L27/1225 ,  C23C14/086 ,  G01N23/207 ,  G02F1/1368 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L22/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

公开(公告)号：US20180286986A1

公开(公告)日：2018-10-04

申请号：US15994303

申请日：2018-05-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro SAKATA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/423 ,  H01L29/417 ,  H01L29/24 ,  H01L29/10 ,  H01L29/08 ,  H01L27/12 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

公开(公告)号：US20180122958A1

公开(公告)日：2018-05-03

申请号：US15846518

申请日：2017-12-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L29/66 ,  H01L27/12 ,  H01L29/12

CPC classification number: H01L29/7869 ,  H01L21/2636 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78696

Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

公开(公告)号：US20170373135A1

公开(公告)日：2017-12-28

申请号：US15687061

申请日：2017-08-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Masashi TSUBUKU ,  Masashi OOTA

IPC: H01L29/04 ,  H01L29/24 ,  H01L29/26 ,  H01L29/786

CPC classification number: H01L29/04 ,  H01L29/045 ,  H01L29/24 ,  H01L29/247 ,  H01L29/26 ,  H01L29/7869 ,  H01L29/78693

Abstract: A highly reliable semiconductor device including, an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer, an insulating layer in contact with the oxide semiconductor layer, a gate electrode layer overlapping with the oxide semiconductor layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first region having a crystal whose size is less than or equal to 10 nm and a second region which overlaps with the insulating layer with the first region provided therebetween and which includes a crystal part whose c-axis is aligned in a direction parallel to a normal vector of the surface of the oxide semiconductor layer.

公开(公告)号：US20160125969A1

公开(公告)日：2016-05-05

申请号：US14993395

申请日：2016-01-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Tetsunori MARUYAMA ,  Takayuki SAITO ,  Yuki IMOTO ,  Noriaki UTO ,  Yuta ENDO ,  Hitomi SHIONOYA ,  Takuya HIROHASHI ,  Shunpei YAMAZAKI

IPC: H01B1/02

CPC classification number: H01B1/02 ,  C23C14/0676 ,  C23C14/3414 ,  C23C14/541 ,  C23C14/5806

Abstract: An object is to provide a transparent conductive film having favorable transparency and conductivity at low cost. Another object is to reduce the resistivity of a transparent conductive film formed using conductive oxynitride including zinc and aluminum. Another object is to provide a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum. When aluminum and nitrogen are made to be included in a transparent conductive film formed using oxide including zinc to form a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum, the transparent conductive film can have reduced resistivity. Heat treatment after the formation of the transparent conductive film that is formed using conductive oxynitride including zinc and aluminum enables reduction in resistivity of the transparent conductive film.

Abstract translation: 本发明的目的是提供一种透明导电膜，其具有良好的透明性和低导电性。 另一个目的是降低使用包括锌和铝的导电氮氧化物形成的透明导电膜的电阻率。 另一个目的是提供使用包括锌和铝的导电氮氧化物形成的透明导电膜。 当使用包含锌的氧化物形成的透明导电膜中包含铝和氮以形成使用包括锌和铝的导电氮氧化物形成的透明导电膜时，透明导电膜可以具有降低的电阻率。 在形成使用包括锌和铝的导电氮氧化物形成的透明导电膜之后的热处理使得能够降低透明导电膜的电阻率。

公开(公告)号：US20160104885A1

公开(公告)日：2016-04-14

申请号：US14969949

申请日：2015-12-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takuya HIROHASHI ,  Teppei OGUNI

IPC: H01M4/38 ,  H01M4/583 ,  H01M10/0525

CPC classification number: H01M4/386 ,  B82Y30/00 ,  B82Y40/00 ,  H01G11/32 ,  H01M4/583 ,  H01M4/587 ,  H01M10/0525 ,  H01M2220/20 ,  H01M2220/30 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54 ,  Y02T10/7011 ,  Y02T10/7022

Abstract: An object is to provide graphene which has high conductivity and is permeable to ions of lithium or the like. Another object is to provide, with use of the graphene, a power storage device with excellent charging and discharging characteristics. Graphene having a hole inside a ring-like structure formed by carbon and nitrogen has conductivity and is permeable to ions of lithium or the like. The nitrogen concentration in graphene is preferably higher than or equal to 0.4 at. % and lower than or equal to 40 at. %. With use of such graphene, ions of lithium or the like can be preferably made to pass; thus, a power storage device with excellent charging and discharging characteristics can be provided.

Abstract translation: 目的是提供具有高导电性并且可渗透锂等离子的石墨烯。 另一个目的是提供使用石墨烯的具有优异充电和放电特性的蓄电装置。 在由碳和氮形成的环状结构中具有孔的石墨烯具有导电性，并且可透过锂等离子。 石墨烯中的氮浓度优选高于或等于0.4at。 ％且低于或等于40at。 ％。 通过使用这样的石墨烯，可以优选使锂等的离子通过; 因此，可以提供具有优异充电和放电特性的蓄电装置。

公开(公告)号：US20150325855A1

公开(公告)日：2015-11-12

申请号：US14704508

申请日：2015-05-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro KAWAKAMI ,  Tatsuya IKENUMA ,  Teruaki OCHIAI ,  Shunhei YOSHITOMI ,  Mako MOTOYOSHI ,  Hiroyuki MIYAKE ,  Yohei MOMMA ,  Takuya HIROHASHI ,  Satoshi SEO

IPC: H01M4/485 ,  H01M4/48 ,  G06F1/16 ,  H01M4/62 ,  H01M4/583 ,  H01M10/052 ,  H01M4/36

CPC classification number: H01M4/485 ,  G04C10/00 ,  G04G21/00 ,  G06F1/16 ,  G06F1/1626 ,  G06F1/163 ,  G06F1/1635 ,  G06F1/1652 ,  H01M4/366 ,  H01M4/483 ,  H01M4/505 ,  H01M4/525 ,  H01M4/583 ,  H01M4/623 ,  H01M4/625 ,  H01M10/052 ,  H01M2220/30

Abstract: A lithium-ion secondary battery with high capacity is provided. Alternatively, a lithium-ion secondary battery with improved cycle characteristics is provided. To achieve this, an active material including a particle having a cleavage plane and a layer containing carbon covering at least part of the cleavage plane is provided. The particle having the cleavage plane contains lithium, manganese, nickel, and oxygen. The layer containing carbon preferably contains graphene. When a lithium-ion secondary battery is fabricated using an electrode including the particle having the cleavage plane at least part of which is covered with the layer containing carbon as an active material, the discharge capacity can be increased and the cycle characteristics can be improved.

Abstract translation: 提供高容量的锂离子二次电池。 或者，提供具有改善的循环特性的锂离子二次电池。 为了实现这一点，提供了包括具有解理面的粒子和包含至少部分解理面的碳的活性物质。 具有解理面的粒子含有锂，锰，镍和氧。 含碳层优选含有石墨烯。 当使用包括具有解理面的电极的电极制造锂离子二次电池时，其中至少一部分被包含碳作为活性材料的层被覆盖，可以提高放电容量并提高循环特性。