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    Light emitting diode for display and display apparatus having the same
    45.
    发明授权
    Light emitting diode for display and display apparatus having the same 有权

    公开(公告)号：US12142602B2

    公开(公告)日：2024-11-12

    申请号：US17844653

    申请日：2022-06-20

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Hyeon Chae ,  Chang Yeon Kim ,  Ho Joon Lee ,  Seong Gyu Jang ,  Chung Hoon Lee ,  Dae Sung Cho

    IPC: H01L25/13 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01L33/38 ,  H01L33/40 ,  H01L33/50 ,  H01L33/62

    Abstract: A light emitting device including a first LED sub-unit having a thickness in a first direction, a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer, a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit, and a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit, in which the active layer of the first LED sub-unit is configured to generate light, includes AlxGa(1-x-y)InyP (0≤x≤1, 0≤y≤1), and overlaps the active layer of the second LED sub-unit in the first direction, and the active layer of the second LED sub-unit includes the same material as the active layer of the first LED sub-unit.

    Light emitting device
    48.
    发明授权
    Light emitting device 有权

    公开(公告)号：US11876156B2

    公开(公告)日：2024-01-16

    申请号：US17115783

    申请日：2020-12-08

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Seong Gyu Jang ,  Ho Joon Lee ,  Jong Hyeon Chae

    IPC: H01L33/62 ,  H01L33/44 ,  H01L33/08 ,  H01L33/38

    CPC classification number: H01L33/62 ,  H01L33/08 ,  H01L33/382 ,  H01L33/44

    Abstract: A light emitting device including first, second, and third light emitting parts disposed near each other and each including a first-type semiconductor layer, a first active layer, and a second-type semiconductor layer, a first pad electrically coupled with the second-type semiconductor layer of the first light emitting part, a second pad electrically coupled with the second-type semiconductor layer of the second light emitting part, a third pad electrically coupled with the second-type semiconductor layer of the third light emitting part, and a common pad electrically coupled with the first-type semiconductor layer of the first, second, and third light emitting parts, in which, in a current density per light emitting part of about 20 A/cm2, one of the first, second, and third light emitting parts that is configured to emit light having the longest peak wavelength has a largest normalized external quantum efficiency.

    Ultraviolet light emitting diode
    49.
    发明授权
    Ultraviolet light emitting diode 有权

    公开(公告)号：US11749780B2

    公开(公告)日：2023-09-05

    申请号：US17099499

    申请日：2020-11-16

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Ju Yong Park ,  Seong Gyu Jang ,  Kyu Ho Lee ,  Joon Hee Lee

    IPC: H01L33/38 ,  H01L33/62 ,  H01L33/00 ,  H01L33/24

    CPC classification number: H01L33/38 ,  H01L33/00 ,  H01L33/24 ,  H01L33/62

    Abstract: An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; a mesa disposed on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer contacting the n-type semiconductor layer; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a plurality of branches, the n-ohmic contact layer surrounds the mesa and is disposed in a region between the branches, each of the n-bump and the p-bump covers an upper surface and a side surface of the mesa, and the p-bump covers at least two of the branches among the plurality of branches. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.

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