公开(公告)号：US20180198023A1

公开(公告)日：2018-07-12

申请号：US15865051

申请日：2018-01-08

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Ji Hye Kim ,  Sang Won Woo

IPC: H01L33/14 ,  H01L33/46 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/14 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/46 ,  H01L2933/0016

Abstract: Described herein is a highly efficient light emitting device. The light emitting device includes: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a current blocking layer disposed on the second conductivity-type semiconductor layer; a transparent electrode layer covering the current blocking layer; a first electrode electrically connected to the first conductivity-type semiconductor layer; a second electrode disposed on the transparent electrode layer and electrically connected to the transparent electrode layer, the second electrode including a second electrode pad and a second electrode extension extending from the second electrode pad; and a second reflective layer interposed between the second electrode and the transparent electrode layer, wherein each of the second electrode pad and the second electrode extension covers at least part of the current blocking layer.

公开(公告)号：US09865775B2

公开(公告)日：2018-01-09

申请号：US15394333

申请日：2016-12-29

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Duk Il Suh ,  Ye Seul Kim ,  Kyoung Wan Kim ,  Sang Won Woo ,  Ji Hye Kim

IPC: H01L33/14 ,  H01L33/22 ,  H01L33/24 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62

CPC classification number: H01L33/24 ,  H01L24/05 ,  H01L24/48 ,  H01L33/145 ,  H01L33/22 ,  H01L33/38 ,  H01L33/382 ,  H01L33/387 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/85399

Abstract: The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.

公开(公告)号：US20170077355A1

公开(公告)日：2017-03-16

申请号：US15219086

申请日：2016-07-25

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim

IPC: H01L33/40 ,  H01L33/44 ,  H01L33/42 ,  H01L33/38

CPC classification number: H01L33/405 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44

Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

Abstract translation: 根据本发明，具有提高光提取效率的发光二极管包括：包括形成在基板上的N层，发光层和P层的半导体层叠结构; 形成在N层上的N型电极; 和形成在P层上的P型电极，其中，所述N型电极和所述P型电极包括焊盘电极和分散电极，并且所述N型电极和/或所述P型电极包括： 用于将光反射到分散电极上的反射电极层。 因此，发光二极管在电极上具有反射电极层，以提高光提取效率。 此外，反射层在垫单元下方被图案化，从而形成粗糙度并改善粘附性。

公开(公告)号：US09397264B2

公开(公告)日：2016-07-19

申请号：US14630273

申请日：2015-02-24

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

IPC: H01L33/38 ,  H01L33/10 ,  H01L33/40 ,  H01L33/44 ,  H01L33/60 ,  H01L33/36 ,  H01L33/42 ,  H01L33/46 ,  H01L33/00 ,  H01L33/20

CPC classification number: H01L33/387 ,  H01L33/0008 ,  H01L33/10 ,  H01L33/20 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: Disclosed herein in an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad located on the second conductive type semiconductor layer opposite to the second conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

Abstract translation: 本文公开在包括电极焊盘的LED芯片中。 LED芯片包括：第一导电型半导体层，第一导电类型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠， 位于与第二导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘; 从所述第一电极焊盘延伸并连接到所述第一导电型半导体层的第一电极延伸部; 电连接到第二导电类型半导体层的第二电极焊盘; 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。

公开(公告)号：US20160079474A1

公开(公告)日：2016-03-17

申请号：US14952641

申请日：2015-11-25

Applicant: Seoul Viosys Co., Ltd.

Inventor： Duck II Suh ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Ji Hye Kim

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/22

CPC classification number: H01L33/24 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L2933/0091

Abstract: This invention relates to a semiconductor light emitting device which has superior lateral light extraction efficiency, and to a method of manufacturing the same. The semiconductor light emitting device includes a sapphire substrate and a light emitting structure formed on an upper surface of the sapphire substrate and including a plurality of nitride epitaxial layers including an active layer which produces light, wherein at least one side surface of the light emitting structure is formed as an inclined surface which creates an acute angle relative to the upper surface of the sapphire substrate. In some embodiments, at least one modification region can be formed in a horizontal direction on at least one side surface of the sapphire substrate using laser irradiation.

Abstract translation: 本发明涉及一种具有优异的侧向光提取效率的半导体发光器件及其制造方法。 半导体发光器件包括蓝宝石衬底和形成在蓝宝石衬底的上表面上的发光结构，并且包括多个氮化物外延层，其包括产生光的有源层，其中发光结构的至少一个侧表面 形成为相对于蓝宝石衬底的上表面产生锐角的倾斜表面。 在一些实施例中，可以使用激光照射在蓝宝石衬底的至少一个侧表面上在水平方向上形成至少一个修改区域。

公开(公告)号：US20150236216A1

公开(公告)日：2015-08-20

申请号：US14701374

申请日：2015-04-30

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ye Seul Kim ,  Da Yeon Jeong ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh

IPC: H01L33/46 ,  H01L33/42 ,  H01L33/32 ,  H01L33/40

CPC classification number: H01L33/46 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60

Abstract: Disclosed is a light emitting diode (LED) comprising a light emitting stacked structure and an electrode structure formed to have a pattern on the light emitting stacked structure. The electrode structure of the LED includes a cluster of reflectors disposed along the pattern on the light emitting stacked structure, and a pad material layer formed to entirely cover the reflectors.

Abstract translation: 公开了一种发光二极管（LED），其包括发光层叠结构和形成为在发光层叠结构上具有图案的电极结构。 LED的电极结构包括在发光层叠结构上沿着图案设置的反射体簇，以及形成为完全覆盖反射体的焊盘材料层。

公开(公告)号：US09112102B2

公开(公告)日：2015-08-18

申请号：US14067455

申请日：2013-10-30

Applicant: Seoul Viosys Co., Ltd.

Inventor： Kyung Wan Kim ,  Tae Kyoon Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang Hyun Oh ,  Jin Woong Lee ,  In Soo Kim

IPC: H01L33/20 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L33/02

CPC classification number: H01L33/385 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: Provided are a light emitting diode (LED) and a method of fabricating the same. The LED includes a unit chip. The unit chip includes a substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially stacked on the substrate. A concavo-convex structure having the shape of irregular vertical lines is disposed in a side surface of the unit chip.

Abstract translation: 提供一种发光二极管（LED）及其制造方法。 LED包括单元芯片。 单元芯片包括依次层叠在基板上的基板和第一导电型半导体层，有源层和第二导电型半导体层。 具有不规则垂直线形状的凹凸结构设置在单元芯片的侧表面中。

公开(公告)号：US20150144981A1

公开(公告)日：2015-05-28

申请号：US14608150

申请日：2015-01-28

Applicant: Seoul Viosys Co., Ltd.

Inventor： Duk Il Suh ,  Jae Moo Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang Hyun Oh ,  Jin Woong Lee

IPC: H01L33/46 ,  H01L33/10 ,  H01L33/50

CPC classification number: H01L33/46 ,  H01L33/10 ,  H01L33/38 ,  H01L33/42 ,  H01L33/50 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to blue, green, and red light.

Abstract translation: 根据示例性实施例的发光二极管（LED）包括布置在基板的第一表面上的发光结构，所述发光结构包括第一导电类型半导体层，第二导电类型半导体层， 以及插入在第一导电型半导体层和第二导电型半导体层之间的有源层。 第一分布式布拉格反射器布置在基板的与第一表面相对的第二表面上，第一分布布拉格反射器用于反射从发光结构发射的光。 第一分布布拉格反射器相对于蓝色，绿色和红色光具有至少90％的反射率。