公开(公告)号：US20210050248A1

公开(公告)日：2021-02-18

申请号：US17088426

申请日：2020-11-03

Applicant: Soitec

Inventor： Fabrice Letertre ,  Oleg Kononchuk

IPC: H01L21/762 ,  C30B33/00 ,  H01L21/18 ,  H01L21/02 ,  C30B33/06 ,  B32B7/12 ,  B32B9/04 ,  C30B29/68 ,  H01L27/12

Abstract: The invention relates to a method for fabricating a pseudo-substrate comprising the steps of providing a single crystal ingot, providing a handle substrate, cutting a thin slice from the single crystal ingot, and attaching the thin slice to the handle substrate to form a pseudo-substrate. According to the invention, the thickness of the thin slice is substantially equal or inferior to a critical thickness below which the slice, if taken alone, is no longer mechanically stable. The invention further relates to a semiconductor structure.

公开(公告)号：US10886162B2

公开(公告)日：2021-01-05

申请号：US16090349

申请日：2017-03-30

Applicant: Soitec

Inventor： Arnaud Castex ,  Oleg Kononchuk

IPC: H01L21/322 ,  H01L27/12 ,  H01L21/762 ,  H01L21/02

Abstract: A semiconductor-on-insulator substrate for use in RF applications, such as a silicon-on-insulator substrate, comprises a semiconductor top layer, a buried oxide layer and a passivation layer over a support substrate. In addition, a penetration layer is provided between the passivation layer and the silicon support substrate to ensure sufficient high resistivity below RF features and avoid increased migration of dislocations in the support substrate. RF devices may be fabricated on and/or in such a semiconductor-on-insulator substrate.

公开(公告)号：US10510565B2

公开(公告)日：2019-12-17

申请号：US15728953

申请日：2017-10-10

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Sébastien Simon

IPC: H01L21/67 ,  F27D5/00 ,  F27D7/06 ,  H01L21/677 ,  H01L21/762

Abstract: A thermal treatment system includes a chamber capable of receiving a plurality of substrates, a gas intake path in a distal portion of the chamber located opposite an area for entry of substrates into the chamber, and an outlet path for the gas and/or volatile species generated during the thermal treatment. The outlet path is located in a proximal portion of the chamber located near the area for entry of the substrates into the chamber. The system further includes a collector device in the proximal portion of the chamber. The collector device has a confinement opening oriented toward the distal portion of the chamber, and the collector device defines a compartment communicating with the outlet path, the compartment being configured so that the gas and the volatile species enter into the compartment via the confinement opening and pass through the compartment to reach the outlet path.

公开(公告)号：US10134602B2

公开(公告)日：2018-11-20

申请号：US15403505

申请日：2017-01-11

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Carole David

IPC: H01L21/00 ,  H01L21/3105 ,  H01L21/762 ,  H01L21/324

Abstract: A process for smoothing a silicon-on-insulator structure comprising the exposure of a surface of the structure to an inert or reducing gas flow and to a high temperature during a heat treatment includes performing a first heat treatment step at a first temperature and under a first gas flow defined by a first flow rate, and performing a second heat treatment step at a second temperature lower than the first temperature and under a second gas flow defined by a second flow rate lower than the first flow rate.

公开(公告)号：US09911624B2

公开(公告)日：2018-03-06

申请号：US15350290

申请日：2016-11-14

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk

IPC: H01L21/331 ,  H01L21/322 ,  H01L21/762 ,  H01L21/324

CPC classification number: H01L21/3225 ,  H01L21/3226 ,  H01L21/324 ,  H01L21/7624

Abstract: This disclosure relates to a method for dissolving a silicon dioxide layer in a structure, including, from the back surface thereof to the front surface thereof, a supporting substrate, the silicon dioxide layer and a semiconductor layer, the dissolution method being implemented in a furnace in which structures are supported on a support, the dissolution method resulting in the diffusion of oxygen atoms included in the silicon dioxide layer through the semiconductor layer and generating volatile products, and the furnace including traps suitable for reacting with the volatile products, so as to reduce the concentration gradient of the volatile products parallel to the front surface of at least one structure.

公开(公告)号：US09875914B2

公开(公告)日：2018-01-23

申请号：US14898937

申请日：2014-06-11

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Christophe Gourdel ,  Carole David ,  Sebastien Mougel ,  Xavier Schneider

IPC: H01L21/00 ,  H01L21/67 ,  H01L21/762 ,  H01L21/673 ,  H01L21/02 ,  H01L21/225 ,  H01L21/687

CPC classification number: H01L21/67017 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/2255 ,  H01L21/67098 ,  H01L21/67309 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/7624

Abstract: A process comprises the following steps: a) provision of a chamber suitable for receiving a plurality of structures, b) circulation of a gas stream in the chamber so that the chamber has a non-oxidizing atmosphere, c) heat treatment of the plurality of structures at a temperature above a threshold value above which the oxygen present in an oxide of a dielectric diffuses through an active layer reacts with semiconductor material of the active layer and produces a volatile material, the process being noteworthy in that the step b) is carried out so that the gas stream has a rate of circulation between the plurality of structures greater than the rate of diffusion of the volatile material into the gas stream.

公开(公告)号：US09759546B2

公开(公告)日：2017-09-12

申请号：US14442081

申请日：2013-09-19

Applicant: SOITEC ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Oleg Kononchuk ,  Didier Dutartre

IPC: G01B11/28 ,  G01B11/06 ,  G01B11/30 ,  H01L21/66 ,  G02B21/36

CPC classification number: G01B11/06 ,  G01B11/0633 ,  G01B11/30 ,  G02B21/361 ,  H01L22/12

Abstract: The invention relates to a method for measuring thickness variations in a layer of a multilayer semiconductor structure, characterized in that it comprises: acquiring, via an image acquisition system, at least one image of the surface of the structure, the image being obtained by reflecting an almost monochromatic light flux from the surface of the structure; and processing the at least one acquired image in order to determine, from variations in the intensity of the light reflected from the surface, variations in the thickness of the layer to be measured, and in that the wavelength of the almost monochromatic light flux is chosen to correspond to a minimum of the sensitivity of the reflectivity of a layer of the structure other than the layer the thickness variations of which must be measured, the sensitivity of the reflectivity of a layer being equal to the ratio of: the difference between the reflectivities of two multilayer structures for which the layer in question has a given thickness difference; to the given thickness difference, the thicknesses of the other layers being for their part identical in the two multilayer structures. The invention also relates to a measuring system implementing the method.

公开(公告)号：US20170221839A1

公开(公告)日：2017-08-03

申请号：US15500721

申请日：2015-07-03

Applicant: Soitec

Inventor： Oleg Kononchuk ,  William Van Den Daele ,  Eric Desbonnets

IPC: H01L23/66 ,  H01L41/04

CPC classification number: H01L23/66 ,  H01L21/306 ,  H01L21/76251 ,  H01L41/042 ,  H03H3/02 ,  H03H3/08

Abstract: A structure for radiofrequency applications includes: a support substrate of high-resistivity silicon comprising a lower part and an upper part having undergone a p-type doping to a depth D; mesoporous trapping layer of silicon formed in the doped upper part of the support substrate. The depth D is less than 1 micron and the trapping layer has a porosity rate of between 20% and 60%.

公开(公告)号：US09548237B2

公开(公告)日：2017-01-17

申请号：US14377738

申请日：2013-01-28

Applicant: Soitec

Inventor： Gweltaz Gaudin ,  Oleg Kononchuk ,  Ionut Radu

IPC: B32B7/04 ,  H01L21/762 ,  B32B9/04

CPC classification number: H01L21/76254 ,  B32B7/04 ,  B32B9/04 ,  B32B2457/14 ,  Y10T428/24802

Abstract: A method comprising the following steps: providing a support substrate and a donor substrate, forming an embrittlement region in the donor substrate so as to delimit a first portion and a second portion on either side of the embrittlement region, assembling the donor substrate on the support substrate, fracturing the donor substrate along the embrittlement region. In addition, the method comprises a step consisting of forming a compressive stress layer in the donor substrate so as to delimit a so-called confinement region interposed between the compressive stress layer and the embrittlement region.

Abstract translation: 一种包括以下步骤的方法：提供支撑衬底和供体衬底，在所述供体衬底中形成脆化区域，以限定所述脆化区域的任一侧上的第一部分和第二部分，将所述施主衬底组装在所述支撑体上 底物，沿着脆化区域压裂施主衬底。 此外，该方法包括在施主衬底中形成压应力层以限定介于压应力层和脆化区之间的所谓约束区的步骤。

公开(公告)号：US20160372342A1

公开(公告)日：2016-12-22

申请号：US14898937

申请日：2014-06-11

Applicant: SOITEC

Inventor： Didier Landru ,  Oleg Kononchuk ,  Christophe Gourdel ,  Carole David ,  Sebastien Mougel ,  Xavier Schneider

IPC: H01L21/67 ,  H01L21/762 ,  H01L21/02 ,  H01L21/687 ,  H01L21/225

CPC classification number: H01L21/67017 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/2255 ,  H01L21/67098 ,  H01L21/67309 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/7624

Abstract: A process comprises the following steps: a) provision of a chamber suitable for receiving the plurality of structures, b) circulation of a gas stream in the chamber so that the chamber has a non-oxidizing atmosphere, c) heat treatment of the plurality of structures at a temperature above a threshold value above which the oxygen present in the oxide of the dielectric diffuses through the active layer reacts with the semiconductor material of the active layer and produces a volatile material, the process being noteworthy in that the step b) is carried out so that the gas stream has a rate of circulation between the plurality of structures greater than the rate of diffusion of the volatile material into the gas stream.

Abstract translation: 一种方法包括以下步骤：a）设置适于接收多个结构的室，b）将气流循环到室中，使得室具有非氧化气氛，c）多个 高于该阈值的结构，电介质的氧化物中存在的氧扩散通过有源层与活性层的半导体材料反应并产生挥发性材料，该过程值得注意的是步骤b）是 使得气流在多个结构之间的循环速率大于挥发性物质扩散到气流中的速率。