Image processing system
    41.
    发明授权
    Image processing system 失效
    图像处理系统

    公开(公告)号:US5383032A

    公开(公告)日:1995-01-17

    申请号:US888711

    申请日:1992-05-27

    IPC分类号: H04N1/407 H04N1/46

    CPC分类号: H04N1/4074

    摘要: An image processing system which partitions an input image data into pixel density data representing a density of each of pixels of the input image and stores the pixel density data. The pixel density distribution of the input image is then computed by counting pixels of each density represented by the stored pixel density data. Accumulation data is then generated corresponding to each density represented by the pixel density data, and a data curve is generated and output representing accumulation data. The data curve representing accumulation data corresponding to each density represented by the pixel density data obtained from the input image data is read and used to correct the converted pixel density data by employing the data curve as a density correction curve indicating a relation between the pixel density data and a density data output. Further, the accumulation data corresponding to each density represented by the pixel density data represents a value proportional to the number of pixels having densities ranging from the lowest density to a density corresponding thereto.

    摘要翻译: 一种图像处理系统,其将输入图像数据分割成表示输入图像的每个像素的密度的像素密度数据,并存储像素密度数据。 然后通过计算由存储的像素密度数据表示的每个密度的像素来计算输入图像的像素密度分布。 然后对应于由像素密度数据表示的每个密度生成累积数据,并生成表示累积数据的数据曲线并输出。 读取表示与由输入图像数据获得的像素密度数据表示的每个浓度相对应的累积数据的数据曲线,并用于通过使用数据曲线作为浓度校正曲线来校正转换的像素密度数据,该曲线指示像素密度 数据和密度数据输出。 此外,对应于由像素密度数据表示的每个密度的累加数据表示与具有从最低密度到与其对应的密度范围的密度的像素数量成比例的值。

    Image processing system
    42.
    发明授权
    Image processing system 失效
    图像处理系统

    公开(公告)号:US5374996A

    公开(公告)日:1994-12-20

    申请号:US904931

    申请日:1992-06-26

    IPC分类号: G06T7/20 G06F15/62

    CPC分类号: G06T7/20

    摘要: An image processing system for reading multi-level image data corresponding to each pixel of an input image from a multi-tone-level draft image such as a photograph and correcting a density level at each of the pixels, which is represented by the obtained image data, and outputting data representing corrected density levels. The image processing system first performs an appropriate sampling of the read image data of the pixels at a sampling rate in such a manner to enable reference to the density levels at the pixels when correcting the density levels. The sampling rate is most appropriately predetermined.

    摘要翻译: 一种图像处理系统,用于从诸如照片的多色调级草稿图像读取与输入图像的每个像素对应的多级图像数据,并且校正由所获得的图像表示的每个像素处的浓度级别 数据和输出表示校正密度水平的数据。 图像处理系统首先以采样率对像素的读取图像数据进行适当采样,以便在校正密度水平时能够参考像素处的浓度水平。 采样率最合适地预先确定。

    Capacitor and method for manufacturing the same
    46.
    发明授权
    Capacitor and method for manufacturing the same 失效
    电容器及其制造方法

    公开(公告)号:US06541813B1

    公开(公告)日:2003-04-01

    申请号:US09650746

    申请日:2000-08-30

    IPC分类号: H01L2976

    CPC分类号: H01L21/31691 H01L28/55

    摘要: The capacitor related to the present invention has a lower electrode, a dielectric film provided on the lower electrode and made mainly of crystal containing at Ti, O and at least one element selected from the group consisting of Ba and Sr, and an upper electrode provided on the dielectric film, wherein the dielectric film includes a layer which contacts the upper electrode. In case the dielectric film which has a thickness of at least 5 nm and exhibits a first-order differential spectrum measured by means of Auger electron spectroscopy, and the in the first-order differential spectrum, a ratio A/B is at most 0.3, where A is the absolute value A of a difference between a third peak appearing near 420 eV and a fourth peak appearing at a higher energy level and near the third peak, and B is the absolute value B of a difference between a first peak appearing near 410 eV and a third peak appearing at a lower energy level and near the first level.

    摘要翻译: 与本发明有关的电容器具有下电极,在下电极上设置的电介质膜,主要由含有Ti,O的晶体和从Ba和Sr组成的组中选出的至少一种元素制成,上电极 在电介质膜上,其中电介质膜包括与上电极接触的层。 在通过俄歇电子能谱法测量的具有至少5nm的厚度并显示一阶微分光谱的电介质膜和一阶微分光谱中,A / B比至多为0.3时, 其中A是在420eV附近出现的第三峰与出现在较高能级和接近第三峰的第四峰之间的差的绝对值A,B是出现在附近的第一峰之间的差的绝对值B 410 eV和第三个峰出现在较低的能级和接近第一级。

    Electronic blackboard device
    47.
    发明授权
    Electronic blackboard device 失效
    电子黑板装置

    公开(公告)号:US06188493B1

    公开(公告)日:2001-02-13

    申请号:US09058242

    申请日:1998-04-10

    IPC分类号: H04N146

    CPC分类号: H04N1/46

    摘要: An electronic blackboard device capable of performing color printing. Data read by an image sensor is converted to digital data by an A/D converter and provided via a shading correcting circuit and a converter to a printer control circuit, which causes a color printer to print the appropriate data in a color corresponding to a marker.

    摘要翻译: 能够进行彩色打印的电子黑板装置。 由图像传感器读取的数据由A / D转换器转换成数字数据,经由阴影校正电路和转换器提供给打印机控制电路,使得彩色打印机以对应于标记的颜色打印适当的数据 。

    Dielectric filter
    48.
    发明授权
    Dielectric filter 失效
    介质过滤器

    公开(公告)号:US5818312A

    公开(公告)日:1998-10-06

    申请号:US511238

    申请日:1995-08-04

    IPC分类号: H01P1/205

    CPC分类号: H01P1/2056 H01P1/2053

    摘要: A dielectric filter includes two dielectric resonators each having a dielectric base body including first, second, third and fourth side surfaces and first and second end surfaces. A through hole is provided from the first end surface to the second end surface to define an inner surface. An outer conductor is located on and partially covers the four side surfaces. Uncovered portions of the second and third side surfaces are provided that are adjacent to each other and bounded by the outer conductor in three directions. An uncovered portion of the fourth side surface is adjacent to an uncovered portion of the first side surface and the first end surface, and is separated from the third side surface by the outer conductor. An inner conductor is located on the inner surface. A connection conductor is also located on the second end surface and connects the inner conductor to the outer conductor. An interstage coupling electrode is located on the uncovered portion of the first side surface. An area of the uncovered portion of the first side surface extends in at least three directions from the interstage coupling electrode and separates the interstage coupling electrode from the outer conductor. An input/output coupling electrode is located on the uncovered portion of the second and third side surfaces. Areas of the uncovered portions of the second and third side surfaces extend in three directions from the input/output coupling electrode and separate the input/output coupling electrode from the outer conductor. The the outer conductor of a first dielectric resonator is electrically connected to the outer conductor of a second dielectric resonator.

    摘要翻译: 介质滤波器包括两个介质谐振器,每个介质谐振器具有包括第一,第二,第三和第四侧面以及第一和第二端面的电介质基体。 从第一端面到第二端面设有通孔,以形成内表面。 外部导体位于并部分地覆盖四个侧表面。 第二和第三侧表面的未覆盖部分被设置成彼此相邻并且在三个方向上由外部导体限定。 第四侧表面的未覆盖部分与第一侧表面和第一端表面的未覆盖部分相邻,并且通过外导体与第三侧表面分离。 内导体位于内表面。 连接导体也位于第二端面上,并将内部导体连接到外部导体。 级间耦合电极位于第一侧表面的未覆盖部分上。 第一侧表面的未覆盖部分的区域从级间耦合电极至少沿三个方向延伸,并将级间耦合电极与外部导体分开。 输入/输出耦合电极位于第二和第三侧表面的未覆盖部分上。 第二和第三侧面的未覆盖部分的区域从输入/输出耦合电极在三个方向上延伸,并将输入/输出耦合电极与外部导体分开。 第一介电谐振器的外导体电连接到第二介质谐振器的外导体。

    Ferroelectric type semiconductor device having a barium titanate type
dielectric film and method for manufacturing the same
    49.
    发明授权
    Ferroelectric type semiconductor device having a barium titanate type dielectric film and method for manufacturing the same 失效
    具有钛酸钡型电介质膜的铁电型半导体器件及其制造方法

    公开(公告)号:US5739563A

    公开(公告)日:1998-04-14

    申请号:US559945

    申请日:1995-11-17

    摘要: A semiconductor memory device comprising a silicon substrate, a plurality of switching transistors formed on the silicon substrate, an insulating layer having an opening and formed on a surface portion of the silicon substrate where the plurality of switching transistors formed, and a plurality of capacitors for accumulating electric charge formed on the insulating layer and connected respectively to the switching transistors via a conductive film buried in the opening of insulating layer, wherein each of the capacitors for accumulating electric charge is provided with an underlying crystal layer formed on the insulating layer and with a dielectric film consisting essentially of a ferroelectric material and epitaxially or orientationaly grown on the underlying crystal layer, and the switching transistors and the capacitors for accumulating electric charge connected to each other constitute a plurality of memory cells arranged in a two-dimensional pattern.

    摘要翻译: 一种半导体存储器件,包括硅衬底,形成在硅衬底上的多个开关晶体管,具有开口并形成在形成有多个开关晶体管的硅衬底的表面部分上的绝缘层,以及多个用于 累积形成在绝缘层上的电荷,并且经由埋在绝缘层开口中的导电膜分别连接到开关晶体管,其中用于积累电荷的每个电容器设置有形成在绝缘层上的下面的晶体层, 基本上由铁电材料构成并在下面的晶体层上生长的外延或取向的电介质膜,并且用于积累彼此连接的电荷的开关晶体管和电容器构成以二维图案布置的多个存储单元。