摘要:
An image processing system which partitions an input image data into pixel density data representing a density of each of pixels of the input image and stores the pixel density data. The pixel density distribution of the input image is then computed by counting pixels of each density represented by the stored pixel density data. Accumulation data is then generated corresponding to each density represented by the pixel density data, and a data curve is generated and output representing accumulation data. The data curve representing accumulation data corresponding to each density represented by the pixel density data obtained from the input image data is read and used to correct the converted pixel density data by employing the data curve as a density correction curve indicating a relation between the pixel density data and a density data output. Further, the accumulation data corresponding to each density represented by the pixel density data represents a value proportional to the number of pixels having densities ranging from the lowest density to a density corresponding thereto.
摘要:
An image processing system for reading multi-level image data corresponding to each pixel of an input image from a multi-tone-level draft image such as a photograph and correcting a density level at each of the pixels, which is represented by the obtained image data, and outputting data representing corrected density levels. The image processing system first performs an appropriate sampling of the read image data of the pixels at a sampling rate in such a manner to enable reference to the density levels at the pixels when correcting the density levels. The sampling rate is most appropriately predetermined.
摘要:
A p-type GaAs or AlGaAs thin film is formed by a MOCVD method. In the growing step of the thin film, the thin film is doped with a high concentration of carbon atoms forming an acceptor level such that the carrier concentration of the thin film falls within the range of between 1.times.10.sup.18 cm.sup.-3 and 1.times.10.sup.20 cm.sup.-3. At least one of trimethyl gallium and trimethyl aluminum is used as a raw material gaseous compound of III-group element, and arsine is used as a raw material gaseous compound of V-group element. The thin film is formed by an epitaxial growth under the molar ratio V/III of the V-group element supply rate to the III-group element supply rate, which is set at such a small value as 0.3 to 2.5, the temperature of 450 to 700.degree. and the pressure of 1 to 400 Torr. The thin film formed under these conditions exhibits a mirror-like smooth surface, and the film-growth rate is dependent on the supply rate of the V-group element.
摘要:
A substrate to be deposited with a superconducting oxide thin film thereon is set a reaction furnace. An organic metal source gas and oxygen-containing gas are alternately introduced into the reactor to pyrolyze, thereby depositing the superconducting oxide thin film containing metal elements of the organic metal at which time an inert gas is used as a carrier gas for the carrier gas.
摘要:
An antenna element, an antenna module, and an electronic equipment using these, are small-sized, high in transmitting and receiving performance, and capable of transmitting and receiving electric waves at a plurality of frequencies. The antenna element includes two antennas having at least a feeder portion and an open portion, and current is fed to each feeder portion. The antenna module includes at least an antenna and a mounting body in which the antenna is mounted, and current is fed to each feeder portion. The electronic equipment includes at least the antenna element or antenna module, a signal modulator, a signal demodulator, a controller, a man-machine interface, and a casing.
摘要:
The capacitor related to the present invention has a lower electrode, a dielectric film provided on the lower electrode and made mainly of crystal containing at Ti, O and at least one element selected from the group consisting of Ba and Sr, and an upper electrode provided on the dielectric film, wherein the dielectric film includes a layer which contacts the upper electrode. In case the dielectric film which has a thickness of at least 5 nm and exhibits a first-order differential spectrum measured by means of Auger electron spectroscopy, and the in the first-order differential spectrum, a ratio A/B is at most 0.3, where A is the absolute value A of a difference between a third peak appearing near 420 eV and a fourth peak appearing at a higher energy level and near the third peak, and B is the absolute value B of a difference between a first peak appearing near 410 eV and a third peak appearing at a lower energy level and near the first level.
摘要:
An electronic blackboard device capable of performing color printing. Data read by an image sensor is converted to digital data by an A/D converter and provided via a shading correcting circuit and a converter to a printer control circuit, which causes a color printer to print the appropriate data in a color corresponding to a marker.
摘要:
A dielectric filter includes two dielectric resonators each having a dielectric base body including first, second, third and fourth side surfaces and first and second end surfaces. A through hole is provided from the first end surface to the second end surface to define an inner surface. An outer conductor is located on and partially covers the four side surfaces. Uncovered portions of the second and third side surfaces are provided that are adjacent to each other and bounded by the outer conductor in three directions. An uncovered portion of the fourth side surface is adjacent to an uncovered portion of the first side surface and the first end surface, and is separated from the third side surface by the outer conductor. An inner conductor is located on the inner surface. A connection conductor is also located on the second end surface and connects the inner conductor to the outer conductor. An interstage coupling electrode is located on the uncovered portion of the first side surface. An area of the uncovered portion of the first side surface extends in at least three directions from the interstage coupling electrode and separates the interstage coupling electrode from the outer conductor. An input/output coupling electrode is located on the uncovered portion of the second and third side surfaces. Areas of the uncovered portions of the second and third side surfaces extend in three directions from the input/output coupling electrode and separate the input/output coupling electrode from the outer conductor. The the outer conductor of a first dielectric resonator is electrically connected to the outer conductor of a second dielectric resonator.
摘要:
A semiconductor memory device comprising a silicon substrate, a plurality of switching transistors formed on the silicon substrate, an insulating layer having an opening and formed on a surface portion of the silicon substrate where the plurality of switching transistors formed, and a plurality of capacitors for accumulating electric charge formed on the insulating layer and connected respectively to the switching transistors via a conductive film buried in the opening of insulating layer, wherein each of the capacitors for accumulating electric charge is provided with an underlying crystal layer formed on the insulating layer and with a dielectric film consisting essentially of a ferroelectric material and epitaxially or orientationaly grown on the underlying crystal layer, and the switching transistors and the capacitors for accumulating electric charge connected to each other constitute a plurality of memory cells arranged in a two-dimensional pattern.
摘要:
A semiconductor memory device having a semiconductor substrate, an insulating layer provided on the substrate, and a memory cell. The memory cell has a switching transistor provided on the substrate and a charge storage element in a trench made in the insulating layer. The charge storage element has a bottom electrode, a dielectric layer and a top electrode deposited one on another in the order mentioned.