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    Image processing system
    1.
    发明授权
    Image processing system 失效
    图像处理系统

    公开(公告)号：US5374996A

    公开(公告)日：1994-12-20

    申请号：US904931

    申请日：1992-06-26

    申请人： Kazuhiro Eguchi ,  Kimio Morimoto ,  Yoichi Okoga

    发明人： Kazuhiro Eguchi ,  Kimio Morimoto ,  Yoichi Okoga

    IPC分类号： G06T7/20 ,  G06F15/62

    CPC分类号： G06T7/20

    摘要： An image processing system for reading multi-level image data corresponding to each pixel of an input image from a multi-tone-level draft image such as a photograph and correcting a density level at each of the pixels, which is represented by the obtained image data, and outputting data representing corrected density levels. The image processing system first performs an appropriate sampling of the read image data of the pixels at a sampling rate in such a manner to enable reference to the density levels at the pixels when correcting the density levels. The sampling rate is most appropriately predetermined.

    摘要翻译： 一种图像处理系统，用于从诸如照片的多色调级草稿图像读取与输入图像的每个像素对应的多级图像数据，并且校正由所获得的图像表示的每个像素处的浓度级别 数据和输出表示校正密度水平的数据。 图像处理系统首先以采样率对像素的读取图像数据进行适当采样，以便在校正密度水平时能够参考像素处的浓度水平。 采样率最合适地预先确定。

    Semiconductor device and method of fabricating the same
    2.
    发明申请
    Semiconductor device and method of fabricating the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20100003813A1

    公开(公告)日：2010-01-07

    申请号：US12585334

    申请日：2009-09-11

    申请人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

    发明人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

    IPC分类号： H01L21/28

    CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02329 ,  H01L21/3145

    摘要： According to the present invention, there is provided a semiconductor device comprising: a gate insulating film selectively formed on a predetermined region of a semiconductor substrate; a gate electrode formed on said gate insulating film; and a source region and drain region formed, in a surface portion of said semiconductor substrate, on two sides of a channel region positioned below said gate electrode, wherein a carbon concentration in an interface where said gate insulating film is in contact with said gate electrode is not more than 5×1022 atoms/cm3.

    摘要翻译： 根据本发明，提供了一种半导体器件，包括：选择性地形成在半导体衬底的预定区域上的栅极绝缘膜; 形成在所述栅极绝缘膜上的栅电极; 以及在所述半导体衬底的表面部分中形成在位于所述栅极电极下方的沟道区域的两侧上的源极区和漏极区，其中所述栅极绝缘膜与所述栅电极接触的界面中的碳浓度 不大于5×1022原子/ cm3。

    Method of manufacturing semiconductor device
    3.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07091135B2

    公开(公告)日：2006-08-15

    申请号：US10798337

    申请日：2004-03-12

    申请人： Seiji Inumiya ,  Kazuhiro Eguchi

    发明人： Seiji Inumiya ,  Kazuhiro Eguchi

    IPC分类号： H01L21/31

    CPC分类号： H01L21/28202 ,  H01L21/2807 ,  H01L29/513 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

    摘要： There is disclosed a method of manufacturing a semiconductor device, which comprises forming a film containing metal elements and silicon elements on a semiconductor substrate, exposing the semiconductor substrate to an atmosphere containing an oxidant to form a silicon dioxide film at the interface between the semiconductor substrate and the film containing metal elements and silicon elements, and nitriding the film containing metal elements and silicon elements after forming the silicon dioxide film.

    摘要翻译： 公开了一种制造半导体器件的方法，其包括在半导体衬底上形成含有金属元素和硅元素的膜，将半导体衬底暴露于含有氧化剂的气氛中，以在半导体衬底之间的界面处形成二氧化硅膜 并且所述膜含有金属元素和硅元素，并且在形成二氧化硅膜之后氮化包含金属元素和硅元素的膜。

    Circuit component
    4.
    发明授权
    Circuit component 失效
    电路元件

    公开(公告)号：US06765805B2

    公开(公告)日：2004-07-20

    申请号：US09970355

    申请日：2001-10-03

    申请人： Takumi Naruse ,  Kenichi Kozaki ,  Kazuhiro Eguchi ,  Katsumi Sasaki

    发明人： Takumi Naruse ,  Kenichi Kozaki ,  Kazuhiro Eguchi ,  Katsumi Sasaki

    IPC分类号： H05K111

    CPC分类号： H01R12/57 ,  H01P1/00 ,  H01P1/2053 ,  H01R12/52 ,  H01R12/718 ,  H01R12/721 ,  H05K3/3405 ,  H05K3/3426 ,  H05K3/368 ,  H05K2201/10386 ,  H05K2201/10757 ,  H05K2201/10772 ,  Y02P70/613

    摘要： A circuit component comprising a circuit board and a terminal for mounting the circuit board on a second circuit board. A length of the circuit board is 10 mm-80 mm, a difference in a coefficient of thermal expansion between the circuit board and the second circuit board is 0.2×10−5/° C. or greater. The terminal is made of an elastic material, and comprised of a first connection section, a second connection section and an elastic section disposed between the first and second connection sections, and the terminal separates the circuit board from the second circuit board by 0.3 mm-5 mm. In the circuit components of the present invention, deterioration in the conduction between the circuit board and the second circuit board due to heat cycles can be prevented. Thus, a circuit component having stable operating characteristics for a long period of time is obtained.

    摘要翻译： 一种电路部件，包括电路板和用于将电路板安装在第二电路板上的端子。 电路板的长度为10mm-80mm，电路板和第二电路板之间的热膨胀系数的差为0.2×10 -5 /℃或更高。 端子由弹性材料制成，包括第一连接部分，第二连接部分和布置在第一和第二连接部分之间的弹性部分，并且端子将电路板与第二电路板分开0.3mm- 5毫米。 在本发明的电路部件中，可以防止由于热循环导致的电路板和第二电路板之间的导通性的恶化。 因此，获得长时间具有稳定的工作特性的电路部件。

    Method of manufacturing a perovskite thin film dielectric
    6.
    发明授权
    Method of manufacturing a perovskite thin film dielectric 失效
    钙钛矿薄膜电介质的制造方法

    公开(公告)号：US5618761A

    公开(公告)日：1997-04-08

    申请号：US526387

    申请日：1995-09-11

    申请人： Kazuhiro Eguchi ,  Masahiro Kiyotoshi ,  Keitaro Imai

    发明人： Kazuhiro Eguchi ,  Masahiro Kiyotoshi ,  Keitaro Imai

    IPC分类号： H01L21/205 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108

    CPC分类号： H01L27/10852 ,  H01L27/10861 ,  H01L28/55

    摘要： Disclosed is a method of manufacturing a semiconductor device, comprising the step of forming a dielectric thin film on a semiconductor layer, the dielectric thin film being made of a compound represented by the general formula (1) given below:ABO.sub.3 (1)where "A" is at least one element selected from the group consisting of Ca, Ba, Sr, Pb and La, and "B" is at least one element selected from the group consisting of Zr and Ti,The dielectric thin film being formed by a chemical vapor deposition under a pressure of 400 Torr or less and a temperature of 1,000.degree. C. or less by using a raw material gas containing a complex compound of element A with a .beta.-diketone, a complex compound of element B with a .beta.-diketone, and an oxidizing agent.

    摘要翻译： 公开了一种制造半导体器件的方法，包括在半导体层上形成电介质薄膜的步骤，所述电介质薄膜由以下给出的通式（1）表示的化合物制成：ABO3（1）其中“ A“是选自Ca，Ba，Sr，Pb和La中的至少一种元素，”B“是选自Zr和Ti中的至少一种元素。电介质薄膜由 通过使用含有元素A的配位化合物与β-二酮的原料气体，元素B与β-二酮的络合物，在400Torr以下的压力和1000℃以下的温度下进行化学气相沉积， 二酮和氧化剂。

    Image processing system
    8.
    发明授权
    Image processing system 失效
    图像处理系统

    公开(公告)号：US5383032A

    公开(公告)日：1995-01-17

    申请号：US888711

    申请日：1992-05-27

    申请人： Kazuhiro Eguchi ,  Hiroshi Imabayashi

    发明人： Kazuhiro Eguchi ,  Hiroshi Imabayashi

    IPC分类号： H04N1/407 ,  H04N1/46

    CPC分类号： H04N1/4074

    摘要： An image processing system which partitions an input image data into pixel density data representing a density of each of pixels of the input image and stores the pixel density data. The pixel density distribution of the input image is then computed by counting pixels of each density represented by the stored pixel density data. Accumulation data is then generated corresponding to each density represented by the pixel density data, and a data curve is generated and output representing accumulation data. The data curve representing accumulation data corresponding to each density represented by the pixel density data obtained from the input image data is read and used to correct the converted pixel density data by employing the data curve as a density correction curve indicating a relation between the pixel density data and a density data output. Further, the accumulation data corresponding to each density represented by the pixel density data represents a value proportional to the number of pixels having densities ranging from the lowest density to a density corresponding thereto.

    摘要翻译： 一种图像处理系统，其将输入图像数据分割成表示输入图像的每个像素的密度的像素密度数据，并存储像素密度数据。 然后通过计算由存储的像素密度数据表示的每个密度的像素来计算输入图像的像素密度分布。 然后对应于由像素密度数据表示的每个密度生成累积数据，并生成表示累积数据的数据曲线并输出。 读取表示与由输入图像数据获得的像素密度数据表示的每个浓度相对应的累积数据的数据曲线，并用于通过使用数据曲线作为浓度校正曲线来校正转换的像素密度数据，该曲线指示像素密度 数据和密度数据输出。 此外，对应于由像素密度数据表示的每个密度的累加数据表示与具有从最低密度到与其对应的密度范围的密度的像素数量成比例的值。