公开(公告)号：US20120319102A1

公开(公告)日：2012-12-20

申请号：US13488879

申请日：2012-06-05

申请人： Shunpei YAMAZAKI ,  Tatsuya HONDA

发明人： Shunpei YAMAZAKI ,  Tatsuya HONDA

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L29/78609 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/14616 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a structure of a transistor which has a channel formation region formed using an oxide semiconductor and a positive threshold voltage value, which enables a so-called normally-on switching element. The transistor includes an oxide semiconductor stack in which at least a first oxide semiconductor layer and a second oxide semiconductor layer with different energy gaps are stacked and a region containing oxygen in excess of its stoichiometric composition ratio is provided.

摘要翻译： 本发明的目的是提供一种晶体管的结构，其具有使用氧化物半导体形成的沟道形成区域和正的阈值电压值，这使得能够形成所谓的常开开关元件。 晶体管包括氧化物半导体堆叠，其中至少第一氧化物半导体层和具有不同能隙的第二氧化物半导体层被堆叠，并且提供含有超过其化学计量组成比的氧的区域。

公开(公告)号：US20120305912A1

公开(公告)日：2012-12-06

申请号：US13570297

申请日：2012-08-09

申请人： Jun KOYAMA ,  Shunpei YAMAZAKI

发明人： Jun KOYAMA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/12

CPC分类号： H01L27/1225 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13452 ,  G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/123 ,  G09G3/3266 ,  G09G3/3275 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2330/023 ,  H01L27/124 ,  H01L27/1285 ,  H01L29/045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first heat treatment, so that a first oxide crystal component is formed in contact with at least part of the base component. A second oxide component is formed over the first oxide crystal component. Crystal growth is performed by a second heat treatment using the first oxide crystal component as a seed, so that a second oxide crystal component is formed. Thus, a stacked oxide material is formed. A transistor with a high mobility is formed using the stacked oxide material and a driver circuit is formed using the transistor.

摘要翻译： 本发明的一个实施例提供了一种在氧化物半导体中实现高迁移率的高度可靠的显示装置。 第一氧化物组分形成在基底组分上。 晶体生长通过第一次热处理从第一氧化物组分的表面向内部进行，从而形成第一氧化物晶体组分与至少一部分基础组分接触。 在第一氧化物晶体组分上形成第二氧化物组分。 通过使用第一氧化物晶体成分作为种子的第二次热处理进行晶体生长，从而形成第二氧化物晶体成分。 因此，形成堆叠的氧化物材料。 使用层叠的氧化物材料形成具有高迁移率的晶体管，并且使用该晶体管形成驱动电路。

公开(公告)号：US20120299001A1

公开(公告)日：2012-11-29

申请号：US13488926

申请日：2012-06-05

申请人： Shunpei YAMAZAKI ,  Hideaki KUWABARA ,  Yasuyuki ARAI

发明人： Shunpei YAMAZAKI ,  Hideaki KUWABARA ,  Yasuyuki ARAI

IPC分类号： H01L29/786

CPC分类号： H01L27/1222 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/13452 ,  G02F1/13458 ,  G02F1/136204 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/136295 ,  G02F2201/123 ,  G02F2202/103 ,  G02F2202/105 ,  G02F2202/28 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67225 ,  H01L21/67236 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669

摘要： [Problem]A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high.[Solving Means]By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized,

摘要翻译： [问题]在传统的液晶显示装置中，使用至少五个光掩模制造TFT，因此制造成本高。 [解决方案]通过在三个光刻步骤中使用三个光掩模来执行像素电极127，源极区域123和漏极区域124的形成，制备具有反向交错型n型的像素TFT部分的液晶显示装置 通道TFT和存储电容器，

公开(公告)号：US20120274879A1

公开(公告)日：2012-11-01

申请号：US13542693

申请日：2012-07-06

申请人： Yasuhiro JINBO ,  Masafumi MORISUE ,  Hajime KIMURA ,  Shunpei YAMAZAKI

发明人： Yasuhiro JINBO ,  Masafumi MORISUE ,  Hajime KIMURA ,  Shunpei YAMAZAKI

IPC分类号： G02F1/13357 ,  G09F13/04

CPC分类号： H01L27/1266 ,  G02F1/133305 ,  G02F1/133603 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/62 ,  H01L51/003 ,  H01L2221/68318 ,  H01L2221/68386

摘要： The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

摘要翻译： 本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术，其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。 此外，本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术，而不会使器件和制造过程复杂化。 根据本发明，在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层，在包含光催化剂物质的有机化合物层上形成元素层，所述有机化合物层包含光催化剂物质 被穿过第一衬底的光照射，并且元件层从第一衬底剥离。

公开(公告)号：US20120273779A1

公开(公告)日：2012-11-01

申请号：US13546345

申请日：2012-07-11

申请人： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

发明人： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/016 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/15 ,  H01L27/3225 ,  H01L27/3241 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78618

摘要： In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced. Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film.

摘要翻译： 在有源矩阵显示装置中，包括在电路中的薄膜晶体管的电特性是重要的，显示装置的性能取决于电特性。 因此，通过使用包括In，Ga和Zn的氧化物半导体膜用于反向交错薄膜晶体管，可以减小薄膜晶体管的电特性的变化。 通过溅射法连续地形成三层栅极绝缘膜，氧化物半导体层和沟道保护层，而不暴露于空气。 此外，在氧化物半导体层中，与沟道保护膜重叠的区域的厚度大于与导电膜接触的区域的厚度。

公开(公告)号：US20120256178A1

公开(公告)日：2012-10-11

申请号：US13426641

申请日：2012-03-22

申请人： Shunpei YAMAZAKI

发明人： Shunpei YAMAZAKI

IPC分类号： H01L29/78 ,  H01L21/36 ,  H01L29/24 ,  H01L29/22

CPC分类号： H01L29/7869 ,  H01L29/78603

摘要： A transistor including an oxide semiconductor with favorable electric characteristics and a manufacturing method thereof are provided. A semiconductor device includes a transistor. The transistor includes an oxide semiconductor film over a base insulating film, a gate electrode overlapping with the oxide semiconductor film with a gate insulating film interposed therebetween, and a pair of electrodes in contact with the oxide semiconductor film and serving as a source electrode and a drain electrode. The base insulating film includes a first oxide insulating film partly in contact with the oxide semiconductor film and a second oxide insulating film in the periphery of the first oxide insulating film. An end portion of the oxide semiconductor film which crosses the channel width direction of the transistor is located over the second oxide insulating film.

摘要翻译： 提供一种包括具有良好电特性的氧化物半导体的晶体管及其制造方法。 半导体器件包括晶体管。 晶体管包括在基底绝缘膜上的氧化物半导体膜，与氧化物半导体膜重叠的栅电极，其间插入有栅极绝缘膜，以及与氧化物半导体膜接触并用作源电极的一对电极和 漏电极。 基底绝缘膜包括与氧化物半导体膜部分接触的第一氧化物绝缘膜和在第一氧化物绝缘膜的周围的第二氧化物绝缘膜。 氧化物半导体膜的与晶体管的沟道宽度方向交叉的端部位于第二氧化物绝缘膜的上方。

公开(公告)号：US20120256177A1

公开(公告)日：2012-10-11

申请号：US13426640

申请日：2012-03-22

申请人： Shunpei YAMAZAKI

发明人： Shunpei YAMAZAKI

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66772

摘要： A transistor including an oxide semiconductor with favorable electric characteristics and a manufacturing method thereof are provided. A semiconductor device includes a transistor. The transistor includes an oxide semiconductor film over a base insulating film, a gate electrode overlapping with the oxide semiconductor film with a gate insulating film interposed therebetween, and a pair of electrodes in contact with the oxide semiconductor film and serving as a source electrode and a drain electrode. The base insulating film includes a first oxide insulating film partly in contact with the oxide semiconductor film and a second oxide insulating film in the periphery of the first oxide insulating film. An end portion of the oxide semiconductor film which crosses the channel width direction of the transistor is located over the first oxide insulating film.

摘要翻译： 提供一种包括具有良好电特性的氧化物半导体的晶体管及其制造方法。 半导体器件包括晶体管。 晶体管包括在基底绝缘膜上的氧化物半导体膜，与氧化物半导体膜重叠的栅电极，其间插入有栅极绝缘膜，以及与氧化物半导体膜接触并用作源电极的一对电极和 漏电极。 基底绝缘膜包括与氧化物半导体膜部分接触的第一氧化物绝缘膜和在第一氧化物绝缘膜的周围的第二氧化物绝缘膜。 氧化物半导体膜的与晶体管的沟道宽度方向交叉的端部位于第一氧化物绝缘膜的上方。

公开(公告)号：US20120252160A1

公开(公告)日：2012-10-04

申请号：US13429977

申请日：2012-03-26

申请人： Shunpei YAMAZAKI

发明人： Shunpei YAMAZAKI

IPC分类号： H01L21/44

CPC分类号： H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

摘要： In a method for manufacturing a transistor including an oxide semiconductor layer, a gate electrode is formed and then an aluminum oxide film, a silicon oxide film, and the oxide semiconductor film are successively formed in an in-line apparatus without being exposed to the air and are subjected to heating and oxygen adding treatment in the in-line apparatus. Then, the transistor is covered with another aluminum oxide film and is subjected to heat treatment, so that the oxide semiconductor film from which impurities including hydrogen atoms are removed and including a region containing oxygen at an amount exceeding that in the stoichiometric composition ratio. The transistor including the oxide semiconductor film is a transistor having high reliability in which the amount of change in threshold voltage of the transistor by the bias-temperature stress (BT test) can be reduced.

摘要翻译： 在制造包括氧化物半导体层的晶体管的方法中，形成栅电极，然后将氧化铝膜，氧化硅膜和氧化物半导体膜依次形成在直列式装置中而不暴露于空气中 并对在线装置进行加热和氧气添加处理。 然后，晶体管被另一个氧化铝膜覆盖，并进行热处理，从而除去包括氢原子的杂质的氧化物半导体膜，并且包括含有超过化学计量组成比的氧的区域。 包括氧化物半导体膜的晶体管是具有高可靠性的晶体管，其中通过偏置温度应力（BT测试）可以减小晶体管的阈值电压的变化量。

公开(公告)号：US20120231581A1

公开(公告)日：2012-09-13

申请号：US13413686

申请日：2012-03-07

申请人： Shunpei YAMAZAKI ,  Yuhei SATO ,  Keiji SATO ,  Tetsunori MARUYAMA

发明人： Shunpei YAMAZAKI ,  Yuhei SATO ,  Keiji SATO ,  Tetsunori MARUYAMA

IPC分类号： H01L21/36

CPC分类号： H01L29/78693

摘要： In a process of manufacturing a transistor including an oxide semiconductor layer, an amorphous oxide semiconductor layer which includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state is formed over a silicon oxide film, an aluminum oxide film is formed over the amorphous oxide semiconductor layer, and then heat treatment is performed so that at least part of the amorphous oxide semiconductor layer is crystallized and an oxide semiconductor layer which includes a crystal having a c-axis substantially perpendicular to a surface of the oxide semiconductor layer is formed.

摘要翻译： 在制造包括氧化物半导体层的晶体管的工艺中，在氧化硅膜上形成包含与结晶态的氧化物半导体的化学计量组成比相比含有过量氧的区域的非晶氧化物半导体层，铝 在非晶形氧化物半导体层上形成氧化膜，然后进行热处理，使得非晶氧化物半导体层的至少一部分结晶，并且包含具有c轴的晶体的氧化物半导体层，该晶体基本上垂直于 形成氧化物半导体层。

公开(公告)号：US20120217515A1

公开(公告)日：2012-08-30

申请号：US13397058

申请日：2012-02-15

申请人： Shunpei YAMAZAKI ,  Takayuki IKEDA ,  Takeshi AOKI ,  Munehiro KOZUMA ,  Takashi NAKAGAWA

发明人： Shunpei YAMAZAKI ,  Takayuki IKEDA ,  Takeshi AOKI ,  Munehiro KOZUMA ,  Takashi NAKAGAWA

IPC分类号： H01L33/08

CPC分类号： H01L27/3262 ,  H01L27/1225 ,  H01L27/1266 ,  H01L27/322

摘要： A display device includes a pixel area including pixels arranged in a matrix and having a horizontal resolution of 350 ppi or more and a color filter layer overlapping with the pixel area. The pixels each include a first transistor whose gate is electrically connected to a scan line and whose one of a source and a drain is electrically connected to a signal line; a second transistor whose gate is electrically connected to the other of the source and the drain of the first transistor and whose one of a source and a drain is electrically connected to a current-supplying line; and a light-emitting element electrically connected to the other of the source and the drain of the second transistor. The first and second transistors each have a channel formation region including a single crystal semiconductor.

摘要翻译： 显示装置包括像素区域，包括排列成矩阵并具有350ppi以上的水平分辨率的像素和与像素区域重叠的滤色器层的像素。 像素各自包括第一晶体管，栅极电连接到扫描线并且其源极和漏极中的一个电连接到信号线; 第二晶体管，其栅极电连接到第一晶体管的源极和漏极中的另一个，并且源极和漏极中的一个电连接到电流线; 以及电连接到第二晶体管的源极和漏极中的另一个的发光元件。 第一和第二晶体管各自具有包括单晶半导体的沟道形成区域。