公开(公告)号：US11519074B2

公开(公告)日：2022-12-06

申请号：US16914652

申请日：2020-06-29

Applicant: Tokyo Electron Limited

Inventor： Kazutoshi Iwai ,  Nobutaka Mizutani ,  Yuichiro Inatomi ,  Takashi Tanaka

IPC: C23C18/34 ,  C23C18/16

Abstract: A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.

公开(公告)号：US20220290302A1

公开(公告)日：2022-09-15

申请号：US17753264

申请日：2020-08-14

Applicant: Tokyo Electron Limited

Inventor： Kazutoshi Iwai ,  Yuichiro Inatomi ,  Takafumi Niwa

IPC: C23C18/16

Abstract: A substrate liquid processing method includes preparing a substrate having a surface including a recess on which a seed layer is stacked; supplying an electroless plating liquid onto the surface of the substrate to fill the recess with the electroless plating liquid while forming a liquid film of the electroless plating liquid on the surface; and adjusting a temperature of the liquid film from a first temperature at which a metal is precipitated on the seed layer to a second temperature lower than the first temperature to fill the recess with the metal starting from a bottom portion of the recess such that a void is not formed therein.

公开(公告)号：US11230767B2

公开(公告)日：2022-01-25

申请号：US16345320

申请日：2017-08-29

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Kazutoshi Iwai

IPC: C23C18/18 ,  C23C18/31 ,  H01L21/288 ,  H05K3/18

Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portion 32 by performing a catalyst imparting processing on the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. The plating liquid M1 contains an inhibitor which suppresses the plating layer 35 from being precipitated on the non-plateable material portion 31.

公开(公告)号：US20210115565A1

公开(公告)日：2021-04-22

申请号：US16496064

申请日：2018-03-22

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Nobutaka Mizutani

IPC: C23C18/16 ,  C23C18/31 ,  H01L21/311

Abstract: A plating method includes preparing a substrate having a surface including an adhesive material portion made of a material to which a catalyst easily adheres and a non-adhesive material portion to which the catalyst is difficult to attach; imparting the catalyst to the substrate by supplying a catalyst solution onto the substrate; removing, by supplying a catalyst removing liquid containing a reducing agent onto the substrate, the catalyst from the non-adhesive material portion while allowing the catalyst to be left on a surface of the adhesive material portion; and forming a plating layer selectively on the adhesive material portion by supplying a plating liquid onto the substrate.

公开(公告)号：US10354915B2

公开(公告)日：2019-07-16

申请号：US15077988

申请日：2016-03-23

Applicant: Tokyo Electron Limited

Inventor： Tomohisa Hoshino ,  Masato Hamada ,  Takashi Tanaka ,  Yuichiro Inatomi ,  Yusuke Saito

IPC: B05D3/12 ,  H01L21/70 ,  H01L21/768 ,  H01L21/67 ,  C23C18/18 ,  H01L21/288 ,  B05D1/00 ,  C23C18/16 ,  C23C18/32 ,  C23C18/38 ,  C23C18/50

Abstract: An adhesion layer formed of a thin film can be formed on a surface of a substrate. An adhesion layer forming method of forming the adhesion layer on the substrate includes supplying a coupling agent onto the substrate 2 while rotating the substrate 2. The substrate 2 is rotated at a low speed equal to or less than 300 rpm and the coupling agent diluted with IPA is supplied onto the substrate 2.

公开(公告)号：US20190157083A1

公开(公告)日：2019-05-23

申请号：US16253380

申请日：2019-01-22

Applicant: Tokyo Electron Limited

Inventor： Mitsuaki Iwashita ,  Takeshi Nagao ,  Nobutaka Mizutani ,  Takashi Tanaka ,  Koichi Yatsuda ,  Kazutoshi Iwai ,  Yuichiro Inatomi

IPC: H01L21/033 ,  C23C14/04 ,  C23C18/16 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/311 ,  C23C18/50 ,  C23C18/32 ,  C23C18/18 ,  C23C16/04

Abstract: A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.

公开(公告)号：US09966306B2

公开(公告)日：2018-05-08

申请号：US15047690

申请日：2016-02-19

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Nobutaka Mizutani ,  Yusuke Saito ,  Kazutoshi Iwai ,  Mitsuaki Iwashita

IPC: H01L21/768 ,  H01L21/67 ,  C23C18/18 ,  C23C18/16 ,  C25D7/12 ,  C23C18/38 ,  C23C18/50

CPC classification number: H01L21/76874 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1696 ,  C23C18/1889 ,  C23C18/38 ,  C23C18/50 ,  C25D7/12 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76898

Abstract: A catalyst adsorbed on a surface of a substrate is bound to the substrate without leaving residues within a recess of the substrate. A catalyst layer forming method includes forming a catalyst layer 22 by supplying a catalyst solution 32 onto a substrate 2 having a recess 2a to adsorb the catalyst 22A onto a surface of the substrate and onto an inner surface of the recess; rinsing the surface of the substrate 2 and an inside of the recess 2a by supplying a rinse liquid; drying the surface of the substrate 2 and the inside of the recess 2a. Further, by supplying a binder solution 34 containing a binder 22B onto the substrate 2, the catalyst 22A on the surface of the substrate 2 is bound to the substrate 2 by the binder 22B.

公开(公告)号：US09922835B2

公开(公告)日：2018-03-20

申请号：US14829740

申请日：2015-08-19

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka

IPC: B05D3/12 ,  H01L21/288 ,  H01L21/768 ,  B05D1/00

CPC classification number: H01L21/288 ,  B05D1/005 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76898

Abstract: A Plating method includes a first plating process S21 of supplying a first plating liquid to a substrate 2 having a recess 12 and forming a first plating layer 13; and a second plating process of supplying a second plating liquid to the substrate 2 and forming a second plating layer 14 on the first plating layer 13 after the first plating process S21. Here, a concentration of an additive contained in the first plating liquid is different from that in the second plating liquid. The first plating process S21 includes a process of forming the first plating layer of a discontinuous film or a particle shape on the substrate 2 by rotating the substrate 2 at a first speed and a process of rotating the substrate 2 at a second speed and at a third speed repeatedly.

公开(公告)号：US09847239B2

公开(公告)日：2017-12-19

申请号：US14245208

申请日：2014-04-04

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67051 ,  H01L21/02052 ,  H01L21/67028

Abstract: There is provided a substrate processing apparatus including: a substrate holder configured to hold a substrate on which a resist pattern is formed; a rinse solution supply unit configured to supply a rinse solution onto the substrate held by the substrate holder; a vapor supply unit configured to supply vapor of a first processing solution, which hydrophobicizes the resist pattern, onto the substrate on which the rinse solution is supplied from the rinse solution supply unit; and a rinse solution removing unit configured to remove the rinse solution from the substrate in an atmosphere including the vapor of the first processing solution supplied from the vapor supply unit.

公开(公告)号：US20160372367A1

公开(公告)日：2016-12-22

申请号：US15184215

申请日：2016-06-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Nobutaka Mizutani

IPC: H01L21/768 ,  C23C18/50 ,  H01L23/528 ,  C23C18/38 ,  H01L23/522 ,  H01L23/532

CPC classification number: C23C18/50 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1893 ,  C23C18/32 ,  C23C18/38 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76898 ,  H01L2221/1089

Abstract: Reliability of a plating process and reliability of a component manufactured through the plating process can be improved by suppressing peeling between plating layers formed by electroless plating. In a plating method, a plated component manufactured by the plating method, and a plating system 1 configured to manufacture the plated component by the plating method, a second electroless plating layer 39, which is made of a copper alloy and formed by the electroless plating, is formed on a surface of a first electroless plating layer 38 formed by the electroless plating. The first electroless plating layer 38 is a barrier layer configured to suppress diffusion of copper and is made of cobalt or a cobalt alloy. The second electroless plating layer 39 is a seed layer for forming an electrolytic plating layer of copper on a surface thereof and is made of an alloy of copper and nickel.

Abstract translation: 通过抑制通过无电镀形成的镀层之间的剥离，可以提高电镀工艺的可靠性和通过电镀工艺制造的部件的可靠性。 在电镀方法中，通过电镀方法制造的镀覆部件和通过电镀法制造镀覆部件的电镀系统1，由铜合金制成并通过无电镀形成的第二无电镀层39 形成在通过无电镀形成的第一化学镀层38的表面上。 第一化学镀层38是阻止铜的扩散而形成的阻挡层，由钴或钴合金构成。 第二无电解镀层39是用于在其表面形成铜的电解镀层的种子层，由铜和镍的合金构成。