公开(公告)号：US10290610B2

公开(公告)日：2019-05-14

申请号：US15688893

申请日：2017-08-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Hsien Huang ,  An-Jhih Su ,  Der-Chyang Yeh ,  Hua-Wei Tseng ,  Li-Hui Cheng ,  Po-Hao Tsai ,  Wei-Yu Chen ,  Ming-Shih Yeh

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L25/065 ,  H01L21/56 ,  H01L23/31 ,  H01L21/768 ,  H01L25/00 ,  H01L23/522 ,  H01L23/498

Abstract: A PoP device includes a first package structure, a second package structure and an underfill layer is provided. The first package structure includes a die, a TIV and an encapsulant. The TIV is aside the die. The encapsulant encapsulates sidewalls of the die and a portion of sidewalls of the TIV. The second package structure is connected to the first package structure through a connector. The underfill layer is disposed to fill a space between the first package structure and the second package structure. A portion of the underfill layer is disposed between the encapsulant and the TIV to cover a portion of sidewalls of the TIV.

公开(公告)号：US20190067249A1

公开(公告)日：2019-02-28

申请号：US15688893

申请日：2017-08-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Hsien Huang ,  An-Jhih Su ,  Der-Chyang Yeh ,  Hua-Wei Tseng ,  Li-Hui Cheng ,  Po-Hao Tsai ,  Wei-Yu Chen ,  Ming-Shih Yeh

IPC: H01L25/065 ,  H01L21/56 ,  H01L23/31 ,  H01L21/768 ,  H01L23/522 ,  H01L25/00

Abstract: A PoP device includes a first package structure, a second package structure and an underfill layer is provided. The first package structure includes a die, a TIV and an encapsulant. The TIV is aside the die. The encapsulant encapsulates sidewalls of the die and a portion of sidewalls of the TIV. The second package structure is connected to the first package structure through a connector. The underfill layer is disposed to fill a space between the first package structure and the second package structure. A portion of the underfill layer is disposed between the encapsulant and the TIV to cover a portion of sidewalls of the TIV.

公开(公告)号：US20190043849A1

公开(公告)日：2019-02-07

申请号：US16158244

申请日：2018-10-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Hui Cheng ,  Jing-Cheng Lin ,  Po-Hao Tsai

IPC: H01L25/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/498 ,  H01L23/538 ,  H01L23/00

Abstract: A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package has a redistribution layer, at least one die over the redistribution layer, through interlayer vias on the redistribution layer and aside the die and a molding compound encapsulating the die and the through interlayer vias disposed on the redistribution layer. The semiconductor package has connectors connected to the through interlayer vias and a protection film covering the molding compound and the die. The protection film is formed by a printing process.

公开(公告)号：US09929128B1

公开(公告)日：2018-03-27

申请号：US15492617

申请日：2017-04-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Hui Cheng ,  Po-Hao Tsai ,  Jing-Cheng Lin ,  Yi-Hang Lin

IPC: H01L23/48 ,  H01L25/10 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L21/683 ,  H01L21/56 ,  H01L21/48

CPC classification number: H01L25/105 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L24/32 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/73204 ,  H01L2225/0651 ,  H01L2225/06548 ,  H01L2225/06586 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/0105 ,  H01L2924/14

Abstract: A chip package structure is provided. The chip package structure includes a redistribution structure. The chip package structure includes a first chip over the redistribution structure. The first chip has a front surface and a back surface opposite to the front surface, and the front surface faces the redistribution structure. The chip package structure includes an adhesive layer on the back surface. The adhesive layer is in direct contact with the back surface, and a first maximum length of the adhesive layer is less than a second maximum length of the first chip. The chip package structure includes a molding compound layer over the redistribution structure and surrounding the first chip and the adhesive layer. A first top surface of the adhesive layer is substantially coplanar with a second top surface of the molding compound layer.

公开(公告)号：US12237291B2

公开(公告)日：2025-02-25

申请号：US17843725

申请日：2022-06-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Hui Cheng ,  Po-Hao Tsai ,  Jing-Cheng Lin

IPC: H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L21/768 ,  H01L23/28 ,  H01L23/31 ,  H01L23/48 ,  H01L23/498 ,  H01L25/00 ,  H01L25/10

Abstract: A semiconductor device and method utilizing a dummy structure in association with a redistribution layer is provided. By providing the dummy structure adjacent to the redistribution layer, damage to the redistribution layer may be reduced from a patterning of an overlying passivation layer, such as by laser drilling. By reducing or eliminating the damage caused by the patterning, a more effective bond to an overlying structure, such as a package, may be achieved.

公开(公告)号：US12132004B2

公开(公告)日：2024-10-29

申请号：US17818797

申请日：2022-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hao Chen ,  Pu Wang ,  Li-Hui Cheng ,  Szu-Wei Lu

IPC: H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/00 ,  H01L23/31 ,  H01L25/00 ,  H01L25/065 ,  H01L25/10

CPC classification number: H01L23/5389 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/5383 ,  H01L23/5386 ,  H01L24/19 ,  H01L24/20 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2224/214 ,  H01L2225/0651 ,  H01L2225/1035 ,  H01L2225/1058

Abstract: Semiconductor devices and methods of manufacture are provided, in which an adhesive is removed from a semiconductor die embedded within an encapsulant, and an interface material is utilized to remove heat from the semiconductor device. The removal of the adhesive leaves behind a recess adjacent to a sidewall of the semiconductor, and the recess is filled.

公开(公告)号：US12100640B2

公开(公告)日：2024-09-24

申请号：US18328387

申请日：2023-06-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hao Chen ,  Hung-Yu Chen ,  Pu Wang ,  Li-Hui Cheng ,  Szu-Wei Lu

IPC: H01L23/373 ,  H01L21/48 ,  H01L23/04 ,  H01L23/31 ,  H01L23/40

CPC classification number: H01L23/3737 ,  H01L21/4882 ,  H01L23/04 ,  H01L23/3128 ,  H01L23/4006 ,  H01L2023/4087

Abstract: A method of forming a semiconductor structure includes: attaching a semiconductor device to a first surface of a substrate; placing a thermal interface material (TIM) film over a first side of the semiconductor device distal from the substrate, where the TIM film is pre-formed before the placing, where after the placing, a peripheral portion of the TIM film extends laterally beyond sidewalls of the semiconductor device; and attaching a lid to the first surface of the substrate to form an enclosed space between the lid and the substrate, where after attaching the lid, the semiconductor device and the TIM film are disposed in the enclosed space, where a first side of the TIM film distal from the substrate contacts the lid.

公开(公告)号：US20240014100A1

公开(公告)日：2024-01-11

申请号：US18366481

申请日：2023-08-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsun Wang ,  Ping-Yin Hsieh ,  Pu Wang ,  Li-Hui Cheng ,  Szu-Wei Lu

IPC: H01L23/433 ,  H01L25/065 ,  H01L25/00 ,  H01L23/367

CPC classification number: H01L23/433 ,  H01L25/0655 ,  H01L25/0652 ,  H01L25/50 ,  H01L23/3675 ,  H01L25/18

Abstract: A method includes bonding a first package and a second package over a package component, adhering a first Thermal Interface Material (TIM) and a second TIM over the first package and the second package, respectively, dispensing an adhesive feature on the package component, and placing a heat sink over and contacting the adhesive feature. The heat sink includes a portion over the first TIM and the second TIM. The adhesive feature is then cured.

公开(公告)号：US20220320029A1

公开(公告)日：2022-10-06

申请号：US17843725

申请日：2022-06-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Hui Cheng ,  Po-Hao Tsai ,  Jing-Cheng Lin

IPC: H01L23/00 ,  H01L23/28 ,  H01L21/768 ,  H01L21/56 ,  H01L23/48 ,  H01L21/48 ,  H01L25/10 ,  H01L25/00 ,  H01L21/683

Abstract: A semiconductor device and method utilizing a dummy structure in association with a redistribution layer is provided. By providing the dummy structure adjacent to the redistribution layer, damage to the redistribution layer may be reduced from a patterning of an overlying passivation layer, such as by laser drilling. By reducing or eliminating the damage caused by the patterning, a more effective bond to an overlying structure, such as a package, may be achieved.

公开(公告)号：US20220122922A1

公开(公告)日：2022-04-21

申请号：US17150300

申请日：2021-01-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hao Chen ,  Pu Wang ,  Li-Hui Cheng ,  Szu-Wei Lu

IPC: H01L23/538 ,  H01L25/065 ,  H01L25/10 ,  H01L23/00 ,  H01L23/31 ,  H01L21/683 ,  H01L21/48 ,  H01L21/56 ,  H01L25/00

Abstract: Semiconductor devices and methods of manufacture are provided, in which an adhesive is removed from a semiconductor die embedded within an encapsulant, and an interface material is utilized to remove heat from the semiconductor device. The removal of the adhesive leaves behind a recess adjacent to a sidewall of the semiconductor, and the recess is filled.