公开(公告)号：US4177307A

公开(公告)日：1979-12-04

申请号：US883948

申请日：1978-03-06

申请人： Yukio Torii ,  Takao Nakamura

发明人： Yukio Torii ,  Takao Nakamura

IPC分类号： B01D53/86 ,  B01J35/04 ,  F01N3/28 ,  F16S5/00 ,  F23G7/07 ,  B32B3/12

CPC分类号： F01N3/2828 ,  B01D53/86 ,  B01J35/04 ,  F01N2330/06 ,  Y10T428/24149 ,  Y10T428/24744

摘要： Thermal shock resistant ceramic honeycomb structures in which the shape of the vertical cross-section of the honeycomb structure is elliptical, and the shape of the channels is quadrilateral, one group of the partitions of the channels being inclined against the long diameter direction of the ellipse-shaped honeycomb structure and another group of the partitions of the channels being parallel to or inclined against the short diameter direction, the two groups of partitions are being crossed to form the quadrilateral channels.

摘要翻译： 蜂窝结构体的垂直截面形状为椭圆形，通道形状为四边形的耐热冲击陶瓷蜂窝结构体，通道的一组隔壁相对于椭圆的长径方向倾斜 形状的蜂窝结构，另一组通道的隔板与短径方向平行或倾斜，两组隔板正交以形成四边形通道。

公开(公告)号：US4133755A

公开(公告)日：1979-01-09

申请号：US818650

申请日：1977-07-25

申请人： Ryohkichi Tarao ,  Kanji Kaku ,  Masaki Hayashi ,  Takao Nakamura ,  Shigeo Ohishi ,  Hajime Yamano

发明人： Ryohkichi Tarao ,  Kanji Kaku ,  Masaki Hayashi ,  Takao Nakamura ,  Shigeo Ohishi ,  Hajime Yamano

IPC分类号： B01J20/00 ,  B01J20/22 ,  C02F1/28 ,  C02B1/42 ,  B01J31/02 ,  C09K3/00

CPC分类号： B01J20/22 ,  B01J20/00 ,  C02F1/288

摘要： As an agent for removing heavy metals such as mercury from waste waters containing the same, a composition and granule based on the composition are provided. Also a method for preparing the granule is provided. The composition consists mainly of a dithiocarbamate bond-containing low molecular weight compound, amorphous silica and active carbon powder. The granule consists mainly of said composition and a vinyl acetate polymer resin as a binder. The method is carried out by kneading and extruding the composition of the granule together with a clay as an excipient. Treated water through said agent can pass the current very severe effluent standards.

摘要翻译： 作为从含有该金属的废水中去除重金属如汞的试剂，提供了基于该组合物的组合物和颗粒。 还提供了制备颗粒的方法。 该组合物主要由含二硫代氨基甲酸酯键的低分子量化合物，无定形二氧化硅和活性炭粉末组成。 颗粒主要由所述组合物和作为粘合剂的乙酸乙烯酯聚合物树脂组成。 该方法通过将颗粒的组合物与作为赋形剂的粘土一起捏合和挤出来进行。 通过所述试剂处理的水可以通过目前非常严格的污水标准。

公开(公告)号：US09004673B2

公开(公告)日：2015-04-14

申请号：US13297701

申请日：2011-11-16

申请人： Keisei Hakamata ,  Hiroyuki Saito ,  Takao Nakamura

发明人： Keisei Hakamata ,  Hiroyuki Saito ,  Takao Nakamura

IPC分类号： B41J11/42 ,  B41J11/48 ,  B41J13/076

CPC分类号： B41J11/485 ,  B41J13/076

摘要： This invention includes an input operation unit which accepts the operation of selecting a first or a second printing medium and outputs information indicating the selected printing medium, a conveyance path, a conveyance mechanism which conveys the selected printing medium in the conveyance direction, and a control unit. The conveyance mechanism includes a main roller, a driven roller which presses the main roller through the selected printing medium, a rotation member having a cam shape, and an elastic member which deforms to change a pressing force in accordance with the rotational position of the rotation member. The control unit rotates the rotation member to the first rotational position when the first printing medium is selected, and rotates the rotation member to the second rotational position where the pressing force becomes smaller than that at the first rotational position when the second printing medium is selected.

摘要翻译： 本发明包括输入操作单元，其接受选择第一或第二打印介质的操作并输出指示所选择的打印介质的信息，输送路径，在输送方向上传送所选择的打印介质的输送机构，以及控制 单元。 传送机构包括：主辊，通过所选择的打印介质按压主辊的从动辊，具有凸轮形状的旋转构件，以及根据旋转的旋转位置变形以改变按压力的弹性构件 会员。 当选择第一打印介质时，控制单元将旋转构件旋转到第一旋转位置，并且当选择第二打印介质时，将旋转构件旋转到第二旋转位置，在第二旋转位置处按压力变得小于在第一旋转位置处的按压力 。

公开(公告)号：US08561400B2

公开(公告)日：2013-10-22

申请号：US13060405

申请日：2008-11-04

申请人： Takao Nakamura ,  Akihiro Yamanaka ,  Hiroshi Yukutomo ,  Kenji Fujii

发明人： Takao Nakamura ,  Akihiro Yamanaka ,  Hiroshi Yukutomo ,  Kenji Fujii

IPC分类号： F15B13/044

CPC分类号： B22D17/32 ,  Y10T137/87249

摘要： A hydraulic circuit of an injection cylinder in a die-casting apparatus, which can achieve IN restriction and OUT restriction in a quickly switchable manner with a single circuit and which allows manufacturing of a high-quality molded product. The hydraulic circuit includes: a first pressure oil path supplying pressure oil to the injection cylinder; a second pressure oil path returning the pressure oil from the injection cylinder; a first flow control valve controlling a flow of the pressure oil through the first pressure oil path; a second flow control valve controlling a flow of the pressure oil through the second pressure oil path; a bypass pressure oil path connected to the second pressure oil path for bypassing the second flow control valve; a bypass on-off valve provided on the bypass pressure oil path and opening/closing the bypass pressure oil path with the pressure oil; and a controller controlling each valve.

摘要翻译： 压铸装置中的注射缸的液压回路，其能够通过单个回路以快速切换的方式实现IN限制和OUT限制，并且允许制造高品质的模制产品。 液压回路包括：向注射缸供给压力油的第一压力油路; 第二压力油路将来自注射缸的压力油返回; 控制压力油通过第一压力油路的流量的第一流量控制阀; 控制压力油通过第二压力油路的流量的第二流量控制阀; 连接到所述第二压力油路以绕过所述第二流量控制阀的旁路压力油路; 设置在旁通压力油路上的旁通开闭阀，并且用压力油打开/关闭旁路压力油路; 以及控制每个阀门的控制器。

公开(公告)号：US08513645B2

公开(公告)日：2013-08-20

申请号：US12532077

申请日：2008-02-20

申请人： Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura

发明人： Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L33/00 ,  H01L29/12

CPC分类号： H01L21/02389 ,  B82Y20/00 ,  C30B29/403 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/16 ,  H01S5/0201 ,  H01S5/34333

摘要： A source gas flows through a flow channel 23 of a metal-organic vapor phase epitaxy reactor 21. The source gas is fed in a direction across a main surface 25a of a susceptor 25. GaN substrates 27a to 27c are placed on the susceptor main surface 25a. An off-angle monotonically varies on a line segment extending from one point on the edges of the main surfaces of the gallium nitride substrates 27a to 27c to another point on the edges. The orientations of the GaN substrates 27a to 27c are represented by the orientations of the orientation flats. By placing the plurality of gallium nitride substrates 27a to 27c on the susceptors 25 of the metal-organic vapor phase epitaxy reactor 21 in these orientations, the influence of the off-angle distribution can be reduced by using the influence originated from the flow of the source gas.

摘要翻译： 源气体流过金属 - 有机气相外延反应器21的流动通道23.源气体沿着穿过基座25的主表面25a的方向进给。将GaN衬底27a至27c放置在基座主表面 25a。 在从氮化镓衬底27a至27c的主表面的边缘上的一个点延伸到边缘上的另一个点的线段上，偏角单调变化。 GaN衬底27a至27c的取向由取向平面的取向表示。 通过将这些取向中的多个氮化镓基板27a〜27c配置在金属 - 有机气相外延反应器21的基座25上，可以通过使用源自该流动的影响来减小偏角分布的影响 源气。

公开(公告)号：US08487327B2

公开(公告)日：2013-07-16

申请号：US13484776

申请日：2012-05-31

申请人： Yohei Enya ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

发明人： Yohei Enya ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L33/00 ,  H01L29/04

CPC分类号： H01L21/02458 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2302/00

摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle with respect to a c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes GaN-based semiconductor layers. The reference axis is inclined at a first angle from the c-axis of the III-nitride semiconductor toward a first crystal axis, either the m-axis or a-axis. The reference axis is inclined at a second angle from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.

摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，其具有沿与第一参考平面垂直的第一参考平面延伸的第一表面，所述第一参考平面垂直于相对于III族氮化物的c轴以预定角度倾斜的参考轴 半导体和设置在支撑基体的主表面上的外延半导体区域。 外延半导体区域包括GaN基半导体层。 基准轴从III族氮化物半导体的c轴朝向第一晶轴倾斜第一角度，即m轴或a轴。 基准轴从III族氮化物半导体的c轴向第二晶轴倾斜第二角度，m轴和a轴的另一方倾斜。 外延半导体区域的最外表面的形态包括多个凹坑。 坑的坑密度不大于5×104cm-2。

公开(公告)号：US08362521B2

公开(公告)日：2013-01-29

申请号：US12767783

申请日：2010-04-26

申请人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

发明人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

IPC分类号： H01L31/102 ,  H01L29/20

CPC分类号： H01L33/007 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02645 ,  H01L33/0075 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing at least one Group III nitride semiconductor crystal substrate on a starting substrate, a process of growing at least one Group III nitride semiconductor crystal layer on the Group III nitride semiconductor crystal substrate, and a process of separating a Group III nitride semiconductor crystal, constituted by the Group III nitride semiconductor crystal substrate and the Group III nitride semiconductor crystal layer, from the starting substrate, and is characterized in that the Group III nitride semiconductor crystal is 10 μm or more but 600 μm or less in thickness, and is 0.2 mm or more but 50 mm or less in width.

摘要翻译： 尺寸适合于半导体器件的III族氮化物半导体晶体及其制造方法，III族氮化物半导体器件及其制造方法以及发光器具。 制造III族氮化物半导体晶体的方法包括在起始衬底上生长至少一种III族氮化物半导体晶体衬底的工艺，在III族氮化物半导体晶体衬底上生长至少一种III族氮化物半导体晶体层的工艺 以及从起始基板分离由III族氮化物半导体晶体基板和III族氮化物半导体晶体层构成的III族氮化物半导体晶体的工序，其特征在于，所述III族氮化物半导体晶体为10μm 以上且600μm以下，宽度为0.2mm以上且50mm以下。

公开(公告)号：US08304793B2

公开(公告)日：2012-11-06

申请号：US12836117

申请日：2010-07-14

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takashi Kyono ,  Takao Nakamura

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takashi Kyono ,  Takao Nakamura

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/22 ,  H01S5/3054 ,  H01S5/3202

摘要： A III-nitride semiconductor optical device has a support base comprised of a III-nitride semiconductor, an n-type gallium nitride based semiconductor layer, a p-type gallium nitride based semiconductor layer, and an active layer. The support base has a primary surface at an angle with respect to a reference plane perpendicular to a reference axis extending in a c-axis direction of the III-nitride semiconductor. The n-type gallium nitride based semiconductor layer is provided over the primary surface of the support base. The p-type gallium nitride based semiconductor layer is doped with magnesium and is provided over the primary surface of the support base. The active layer is provided between the n-type gallium nitride based semiconductor layer and the p-type gallium nitride based semiconductor layer over the primary surface of the support base. The angle is in the range of not less than 40° and not more than 140°. The primary surface demonstrates either one of semipolar nature and nonpolar nature. The p-type gallium nitride based semiconductor layer contains carbon as a p-type dopant. A carbon concentration of the p-type gallium nitride based semiconductor layer is not less than 2×1016 cm−3, and the carbon concentration of the p-type gallium nitride based semiconductor layer is not more than 1×1019 cm−3.

摘要翻译： III族氮化物半导体光学器件具有由III族氮化物半导体，n型氮化镓系半导体层，p型氮化镓系半导体层和有源层构成的支撑基体。 支撑基座具有相对于垂直于在III族氮化物半导体的c轴方向上延伸的参考轴线的参考平面成一定角度的主表面。 n型氮化镓基半导体层设置在支撑基体的主表面上。 p型氮化镓基半导体层掺杂有镁并且设置在载体基体的主表面上。 有源层设置在支撑基体的主表面上的n型氮化镓基半导体层和p型氮化镓基半导体层之间。 该角度在不小于40°且不大于140°的范围内。 主要表面表现出半极性和非极性之一。 p型氮化镓系半导体层含有碳作为p型掺杂剂。 p型氮化镓系半导体层的碳浓度为2×1016cm-3以上，p型氮化镓系半导体层的碳浓度为1×1019cm-3以下。

公开(公告)号：US08183071B2

公开(公告)日：2012-05-22

申请号：US12539887

申请日：2009-08-12

申请人： Katsushi Akita ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura

发明人： Katsushi Akita ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01S2304/04

摘要： In step S106, an InXGa1-XN well layer is grown on a semipolar main surface between times t4 and t5 while a temperature in a growth furnace is maintained at temperature TW. In step S107, immediately after completion of the growth of the well layer, the growth of a protective layer covering the main surface of the well layer is initiated at temperature TW. The protective layer is composed of a gallium nitride-based semiconductor with a band gap energy that is higher than that of the well layer and equal to or less than that of a barrier layer. In step S108, the temperature in the furnace is changed from temperatures TW to TB before the barrier layer growth. The barrier layer composed of the gallium nitride-based semiconductor is grown on the protective layer between times t8 and t9 while the temperature in the furnace is maintained at temperature TB.

摘要翻译： 在步骤S106中，在时间t4〜t5的半极性主面上生长InXGa1-XN阱层，而生长炉内的温度保持在温度TW。 在步骤S107中，在阱层生长完成之后，在温度TW下开始覆盖阱层主表面的保护层的生长。 保护层由氮化镓系半导体构成，带隙能量高于阱层的带隙能量，并且等于或小于势垒层的带隙能量。 在步骤S108中，在阻挡层生长之前，炉中的温度从温度TW变为TB。 由氮化镓系半导体构成的阻挡层在时刻t8〜t9的保护层上生长，同时炉内的温度保持在温度TB。

公开(公告)号：US20120080659A1

公开(公告)日：2012-04-05

申请号：US13279005

申请日：2011-10-21

申请人： Masaki UENO ,  Yohei Enya ,  Takashi Kyono ,  Katsushi Akita ,  Yusuke Yoshizumi ,  Takamichi Sumitomo ,  Takao Nakamura

发明人： Masaki UENO ,  Yohei Enya ,  Takashi Kyono ,  Katsushi Akita ,  Yusuke Yoshizumi ,  Takamichi Sumitomo ,  Takao Nakamura

IPC分类号： H01L33/04

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L33/18 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3407 ,  H01S2301/173 ,  H01S2304/04

摘要： In the nitride based semiconductor optical device, the strained well layers extend along a reference plane tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. A gallium nitride based semiconductor layer is adjacent to a light-emitting layer with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer and the gallium nitride based semiconductor layer.

摘要翻译： 在基于氮化物的半导体光学器件中，应变阱层沿着从与c轴方向延伸的参考轴正交的平面以倾斜角α倾斜的参考平面延伸。 氮化镓基半导体层与具有负的压电场的发光层相邻，并且具有比阻挡层的带隙大的带隙。 阱层中的压电场的方向指向从n型层到p型层的方向，并且氮化镓基半导体层中的压电场沿着从p型层的方向 到n型层。 因此，价带，而不是导带，在发光层和氮化镓基半导体层之间的界面处有下沉。