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109 条记录 (耗时 0.036 秒)

    Method of controlling alternating current plasma display panel with positive priming discharge pulse and negative priming discharge pulse
    41.
    发明授权
    Method of controlling alternating current plasma display panel with positive priming discharge pulse and negative priming discharge pulse 失效
    控制交流等离子体显示面板的方法，采用正引脚放电脉冲和负引发放电脉冲

    公开(公告)号：US6118416A

    公开(公告)日：2000-09-12

    申请号：US941203

    申请日：1997-09-30

    申请人： Tadashi Nakamura ,  Kazuhiro Ito

    发明人： Tadashi Nakamura ,  Kazuhiro Ito

    IPC分类号： G09G3/288 ,  G09G3/291 ,  G09G3/292 ,  G09G3/294 ,  G09G3/298 ,  G09G3/28

    CPC分类号： G09G3/2927 ,  G09G3/2932 ,  G09G2320/0228 ,  G09G2320/0238

    摘要： A plasma display panel produces a visual image through selective firing in indicating cells, and all of the indicating cells are faintly fired in a priming discharge period before the selective firing; a positive pulse and a negative pulse are applied to scanning electrodes and sustain electrodes in such a manner as to be partially overlapped with each other, and the pulse amplitude of each pulse is relatively low so as to prevent data electrodes from undesirable discharge, thereby making the luminance in the priming discharge period small.

    摘要翻译： 等离子体显示面板通过选择性地烧制指示细胞产生视觉图像，并且所有指示细胞在选择性烧制之前的初始放电期间被微弱地烧制; 将正脉冲和负脉冲施加到扫描电极和维持电极以使其部分重叠，并且每个脉冲的脉冲幅度相对较低，以防止数据电极不期望的放电，从而使得 起动放电期间的亮度小。

    Methods for protecting vegetables, turfgrass, rice and fruit trees from fungi and bacteria
    42.
    发明授权
    Methods for protecting vegetables, turfgrass, rice and fruit trees from fungi and bacteria 失效
    从真菌和细菌中保护蔬菜，草坪草，水稻和果树的方法

    公开(公告)号：US5374627A

    公开(公告)日：1994-12-20

    申请号：US006145

    申请日：1993-01-19

    申请人： Kazuhiro Ito ,  Etsuzo Entani ,  Yoshiya Kawamura

    发明人： Kazuhiro Ito ,  Etsuzo Entani ,  Yoshiya Kawamura

    IPC分类号： A01N63/00 ,  A01N37/02 ,  A01N43/16 ,  A01N65/00 ,  A01N43/04 ,  A01N25/00

    CPC分类号： A01N43/16 ,  A01N63/00 ,  A01N65/20

    摘要： A variety of plant diseases and damage by certain pests in agricultural and horticultural plants can be efficiently controlled without substantial chemical injuries by applying a plant-protecting composition which comprises (a) 1 part by weight of a chitosan hydrolyzate having an average molecular weight of 10,000 to 50,000, obtained by acid hydrolysis or enzymatic hydrolysis of chitosan and (b) 0.25 to 4 parts by weight of acetic acid. Any possible chemical injury to plants caused by applying the composition can be further reduced when the composition is admixed with a deproteinized juice of alfalfa leaves.

    摘要翻译： 通过施用植物保护组合物可以有效地控制农业和园艺植物中的某些害虫的各种植物病害和损害，而不会造成实质的化学损伤，所述植物保护组合物包含（a）1重量份的平均分子量为10,000的壳聚糖水解产物 至50,000，通过壳聚糖的酸水解或酶水解获得，和（b）0.25至4重量份的乙酸。 当将组合物与脱蛋白的苜蓿叶汁混合时，通过施用组合物引起的对植物的任何可能的化学损伤可以进一步降低。

    Optoelectronic device
    43.
    发明授权
    Optoelectronic device 失效
    光电器件

    公开(公告)号：US4816890A

    公开(公告)日：1989-03-28

    申请号：US915410

    申请日：1986-10-06

    申请人： Hirobumi Ouchi ,  Ichiro Fujiwara ,  Hiroshi Matsuda ,  Kazuhiro Ito ,  Kazuyuki Nagatsuma

    发明人： Hirobumi Ouchi ,  Ichiro Fujiwara ,  Hiroshi Matsuda ,  Kazuhiro Ito ,  Kazuyuki Nagatsuma

    IPC分类号： H01L31/107 ,  H01L27/14 ,  H01L31/00

    CPC分类号： H01L31/1075

    摘要： An avalanche photodiode including a substrate, a first semiconductor region of a first conductivity type having a relatively large band gap, a second semiconductor region of a second conductivity type having a relatively large band gap, and a third semiconductor region of the first conductivity type having a band gap smaller than the band gap of the first and second semiconductor regions, is disclosed in which, in order to suppress an increase in dark current and to cause the avalanche photodiode to operate on a low voltage, a fourth semiconductor region equal in conductivity type to and larger in impurity concentration than the first semiconductor region is formed in the first semiconductor region at a position below a central portion of a pn junction formed between the first semiconductor region and the second semiconductor region. The avalanche photodiode formed with this structure has low-noise and low operation voltage characteristics.

    摘要翻译： 一种雪崩光电二极管，包括基板，具有相对较大带隙的第一导电类型的第一半导体区域，具有相对较大带隙的第二导电类型的第二半导体区域，以及具有第一导电类型的第三半导体区域， 公开了一种小于第一和第二半导体区域的带隙的带隙，其中为了抑制暗电流的增加并使雪崩光电二极管在低电压下工作，等于导电性的第四半导体区域 在形成在第一半导体区域和第二半导体区域之间的pn结的中心部分下方的位置处，在第一半导体区域中形成并且具有比第一半导体区域更大的杂质浓度。 用这种结构形成的雪崩光电二极管具有低噪声和低工作电压特性。

    Beta-sialon, method for producing same and light-emitting device using same
    48.
    发明授权
    Beta-sialon, method for producing same and light-emitting device using same 有权
    β-赛隆，其制造方法和使用其的发光装置

    公开(公告)号：US09139769B2

    公开(公告)日：2015-09-22

    申请号：US13508949

    申请日：2010-11-04

    申请人： Hideyuki Emoto ,  Kazuhiro Ito

    发明人： Hideyuki Emoto ,  Kazuhiro Ito

    IPC分类号： C09K11/77 ,  C09K11/08 ,  H05B33/14 ,  H01L33/50

    CPC分类号： C09K11/7734 ,  C09K11/0883 ,  H01L33/50 ,  H05B33/14

    摘要： β-Sialon comprising Eu2+ that is present in a solid solution form in β-sialon represented by Si6-zAlzOzN μm [wherein z is 0.3-1.5], which shows, when excited with light of 450 nm in wavelength, a peak wavelength of fluorescent spectrum of 545-560 nm, a half-value breadth of 55 nm or greater, and an external quantum efficiency of 45% or greater. The β-sialon can be produced by blending at least one kind of oxide selected from aluminum oxide and silicon oxide with silicon nitride and aluminum nitride in such a manner as to give z of 0.3-1.5, further adding thereto a europium compound and a β-sialon powder having an average particle diameter of 5 μm or greater and an average degree of circularity of 0.7 or greater, each in a definite amount, and baking the mixture.

    摘要翻译： ＆bgr; -SiONON，其以Si6-zAlzOzNi [其中z为0.3-1.5]表示的固体溶液形式存在，其表示当用波长为450nm的光激发时，峰值波长 的荧光光谱为545-560nm，半值宽度为55nm以上，外部量子效率为45％以上。 可以通过将选自氧化铝和氧化硅中的至少一种氧化物与氮化硅和氮化铝以使得z为0.3-1.5的方式共混来制备，并进一步加入铕化合物和 平均粒径为5μm以上，平均圆形度为0.7以上的硅铝氧氮粉末，一定量，并烘烤该混合物。

    Method for preparing mayenite-containing oxide and method for preparing electroconductive mayenite-containing oxide
    49.
    发明授权
    Method for preparing mayenite-containing oxide and method for preparing electroconductive mayenite-containing oxide 有权
    制备含钙锰氧化物的方法及其制备含导电钙铝氧化物的方法

    公开(公告)号：US08377413B2

    公开(公告)日：2013-02-19

    申请号：US13192568

    申请日：2011-07-28

    申请人： Kazuhiro Ito ,  Satoru Watanabe ,  Naomichi Miyakawa ,  Setsuro Ito ,  Kazunari Watanabe

    发明人： Kazuhiro Ito ,  Satoru Watanabe ,  Naomichi Miyakawa ,  Setsuro Ito ,  Kazunari Watanabe

    IPC分类号： C01F7/00

    CPC分类号： C01F7/164 ,  C01P2006/40

    摘要： To provide a method for preparing a mayenite-containing oxide containing a mayenite type compound and having a hydride ion density of at least 1×1018/cm3 without need for expensive facilities, control of complicated reaction conditions or a long period of reaction time. A method for preparing a mayenite-containing oxide, which comprises a firing step of heating a starting material having a molar ratio of CaO:Al2O3 being from 9:10 to 14:5 based on the oxides at a temperature of from 900 to 1,300° C. to obtain a fired powder and a hydrogenation step of firing the fired powder at a temperature of at least 1,210° C. and lower than 1,350° C. in a hydrogen-containing gas having an oxygen partial pressure of at most 1,000 Pa to obtain a mayenite-containing oxide containing a mayenite type compound and having a hydride ion density of at least 1×1018/cm3, and a method for preparing an electroconductive mayenite-containing oxide, which comprises irradiating the obtained mayenite-containing oxide with an ultraviolet ray etc. to obtain a mayenite-containing oxide containing an electroconductive mayenite type compound.

    摘要翻译： 为了提供一种制备含有钙铝石型化合物并且氢化物离子密度为至少1×1018 / cm3而不需要昂贵的设备，控制复杂的反应条件或长时间的反应时间的钙铝氧化物的方法。 一种含有钙铝石的氧化物的制造方法，其特征在于，在900〜1300℃的温度下，对CaO：Al 2 O 3的摩尔比为9:10〜14:5的原料进行加热， 以获得烧制粉末和氢化步骤，在氧分压至多为1000Pa的含氢气体中，在至少1,210℃且低于1350℃的温度下焙烧烧制粉末至 得到含有钙铝石型化合物，含氢离子密度为1×1018 / cm3以上的含钙锰矿的氧化物，以及制造含导电性钙铝的氧化物的方法，其包括用紫外线照射所得到的含有钙铝的氧化物 以获得含有导电钙铝石型化合物的含有钙铝的氧化物。