Semiconductor device, and manufacturing method and manufacturing apparatus of the same
    41.
    发明授权
    Semiconductor device, and manufacturing method and manufacturing apparatus of the same 有权
    半导体装置及其制造方法及制造装置

    公开(公告)号:US08956917B2

    公开(公告)日:2015-02-17

    申请号:US13353826

    申请日:2012-01-19

    CPC分类号: H01L21/78 H01L21/6836

    摘要: According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The method includes: (a) forming cutting grooves in an element formation surface of a semiconductor wafer on which semiconductor elements are formed; (b) applying a protection tape on the element formation surface of the semiconductor wafer; (c) grinding a rear surface of the semiconductor wafer to thin the semiconductor wafer and to divide the semiconductor wafer into a plurality of semiconductor chips on which the semiconductor elements are formed; (d) forming an adhesive layer on the rear surface of the semiconductor wafer; (e) separating and cutting the adhesive layer for each of the semiconductor chips; and (f) removing the protection tape. The (e) is performed by spraying a high-pressure air to the adhesive layer formed on the rear surface of the semiconductor wafer while melting or softening the adhesive layer by heating.

    摘要翻译: 根据一个实施例,公开了一种半导体器件的制造方法。 该方法包括:(a)在形成有半导体元件的半导体晶片的元件形成表面中形成切割槽; (b)在半导体晶片的元件形成表面上施加保护带; (c)研磨半导体晶片的后表面以使半导体晶片变薄,并将半导体晶片分成多个形成有半导体元件的半导体芯片; (d)在半导体晶片的后表面上形成粘合剂层; (e)分离和切割每个半导体芯片的粘合剂层; 和(f)去除保护胶带。 (e)通过在通过加热熔化或软化粘合剂层的同时向形成在半导体晶片的后表面上的粘合剂层喷射高压空气来进行。

    Peeling device and peeling method
    45.
    发明授权
    Peeling device and peeling method 有权
    剥皮装置和剥皮方法

    公开(公告)号:US07172673B2

    公开(公告)日:2007-02-06

    申请号:US11038479

    申请日:2005-01-21

    IPC分类号: B32B38/10

    摘要: A peeling device 11 includes an adsorber 15 having an adsorbing face 20A that adsorbs and retains a wafer W, and a peeling element 17 that holds a protective sheet H stuck to the wafer W, and peels off the protective sheet H from the wafer W through moving relatively to the adsorber 15. The adsorber 15 and the peeling element 17 are arranged so as to peel off the protective sheet H from the wafer W intermittently through moving relatively to each other while a peeling operation and a counter-peeling operation are performed alternately.

    摘要翻译: 剥离装置11包括具有吸附并保持晶片W的吸附面20A的吸附器15和将保护片H保持在晶片W上的剥离元件17,并从保护片H剥离晶片W 通过相对于吸附器15移动。 吸附器15和剥离元件17被布置成在交替执行剥离操作和反剥离操作的同时间歇地通过相对移动而将保护片H从晶片W剥离。

    Semiconductor device manufacturing apparatus and semiconductor device manufacturing method for forming semiconductor chips by dividing semiconductor wafer
    46.
    发明授权
    Semiconductor device manufacturing apparatus and semiconductor device manufacturing method for forming semiconductor chips by dividing semiconductor wafer 失效
    半导体装置的制造装置及半导体装置的半导体装置的制造方法

    公开(公告)号:US07140951B2

    公开(公告)日:2006-11-28

    申请号:US10385505

    申请日:2003-03-12

    申请人: Tetsuya Kurosawa

    发明人: Tetsuya Kurosawa

    IPC分类号: H01L21/46

    摘要: An apparatus for manufacturing a semiconductor device includes a first affixing mechanism, cutting mechanism, a second affixing mechanism and peeling mechanism. The first affixing mechanism affixes a first holding member to a rear surface of a semiconductor wafer which is opposite to an element forming surface thereof. The cutting mechanism cuts and discretely divides the semiconductor wafer. The second affixing mechanism affixes a second holding member to the element forming surface side of the semiconductor wafer while the first holding member is expanded to widen gaps of semiconductor elements of the discretely divided semiconductor wafer. The peeling mechanism peels the first holding member.

    摘要翻译: 一种半导体器件的制造装置,包括第一固定机构,切断机构,第二固定机构和剥离机构。 第一固定机构将第一保持构件固定到与其元件形成表面相对的半导体晶片的后表面。 切割机构切割并离散地划分半导体晶片。 第二固定机构将第二保持构件固定到半导体晶片的元件形成表面侧,同时第一保持构件被扩展以加宽离散分割的半导体晶片的半导体元件的间隙。 剥离机构剥离第一保持构件。

    Semiconductor wafer dividing apparatus and semiconductor device manufacturing method
    50.
    发明授权
    Semiconductor wafer dividing apparatus and semiconductor device manufacturing method 有权
    半导体晶片分割装置及半导体装置的制造方法

    公开(公告)号:US06756562B1

    公开(公告)日:2004-06-29

    申请号:US10390900

    申请日:2003-03-19

    IPC分类号: B23K2638

    摘要: A semiconductor device manufacturing apparatus includes a damage forming equipment, dividing equipment and removing equipment. The damage forming equipment forms damage layers used as starting points to divide a semiconductor wafer into discrete semiconductor chips on a rear surface side of the semiconductor wafer which is opposite to an element forming surface. The dividing equipment divides the semiconductor wafer into discrete semiconductor chips with the damage layers used as the starting points. The removing equipment removes a rear surface portion of the semiconductor wafer to at least a depth where the damage layers are no more present.

    摘要翻译: 半导体器件制造装置包括损伤形成设备,分割设备和去除设备。 损伤形成设备形成用作起点的损伤层,以将半导体晶片分成与元件形成表面相对的半导体晶片的背面侧上的分立半导体芯片。 分割设备将半导体晶片分为分立半导体芯片,其中损伤层用作起点。 去除设备将半导体晶片的后表面部分移至至少不存在损伤层的深度。